PIC18F1XK22/LF1XK22

Flash Memory Programming Specification

1.0 DEVICE OVERVIEW
2.1.1.1 Single-Supply ICSP Programming
This document includes the programming specifications for the following devices: PIC18F13K22 PIC18F14K22 PIC18LF13K22 PIC18LF14K22 The LVP bit in Configuration register, CONFIG4L, enables single-supply (low-voltage) ICSP programming. The LVP bit defaults to a 1 (enabled) from the factory. If Single-Supply Programming mode is not used, the LVP bit can be programmed to a 0 and RC3/PGM becomes a digital I/O pin. However, the LVP bit may only be programmed by entering the High-Voltage ICSP mode, where MCLR/VPP/RA3 is raised to VIHH. Once the LVP bit is programmed to a 0, only the High-Voltage ICSP mode is available and only the High-Voltage ICSP mode can be used to program the device. Note 1: The High-Voltage ICSP mode is always available, regardless of the state of the LVP bit, by applying VIHH to the MCLR/ VPP/RA3 pin. 2: While in Low-Voltage ICSP mode, the RC3 pin can no longer be used as a general I/O.

2.0

PROGRAMMING OVERVIEW

The PIC18F1XK22/LF1XK22 devices can be programmed using either the high-voltage In-Circuit Serial Programming (ICSP) method or the lowvoltage ICSP method. Both methods can be done with the device in the users system. The low-voltage ICSP method is slightly different than the high-voltage method and these differences are noted where applicable. The PIC18F1XK22 devices operate from 1.8 to 5.5 volts and the PIC18LF1XK22 devices operate from 1.8 to 3.6 volts. All other aspects of the PIC18F1XK22 with regards to the PIC18LF1XK22 devices are identical.

2.1

Hardware Requirements

In High-Voltage ICSP mode, the PIC18F1XK22/ LF1XK22 devices require two programmable power supplies: one for VDD and one for MCLR/VPP/RA3. Both supplies should have a minimum resolution of 0.25V. Refer to Section 8.0 AC/DC Characteristics Timing Requirements for Program/Verify Test Mode for additional hardware parameters.

2.1.1

LOW-VOLTAGE ICSP PROGRAMMING

In Low-Voltage ICSP mode, the PIC18F1XK22/ LF1XK22 devices can be programmed using a single VDD source in the operating range. The MCLR/VPP/ RA3 does not have to be brought to a different voltage, but can instead be left at the normal operating voltage. Refer to Section 8.0 AC/DC Characteristics Timing Requirements for Program/Verify Test Mode for additional hardware parameters.

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PIC18F1XK22/LF1XK22
2.2 Pin Diagrams
The pin diagrams for the PIC18F1XK22/LF1XK22 family are shown in Figure 2-1.

TABLE 2-1:
Pin Name

PIN DESCRIPTIONS (DURING PROGRAMMING): PIC18F1XK22/LF1XK22

During Programming Pin Name Pin Type P P P I I I/O Programming Enable Power Supply Ground Low-Voltage ICSP input when LVP Configuration bit equals 1(1) Serial Clock Serial Data Pin Description

MCLR/VPP/RA3 VDD(2) VSS(2) RC3 RA1 RA0

VPP VDD VSS PGM PGC PGD

Legend: I = Input, O = Output, P = Power Note 1: See Figure 6-1 for more information. 2: All power supply (VDD) and ground (VSS) pins must be connected.

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PIC18F1XK22/LF1XK22
FIGURE 2-1: 20-PIN PDIP, SSOP AND SOIC PIN DIAGRAM FOR PIC18F1XK22/LF1XK22
20-pin PDIP, SSOP, SOIC (300 MIL)

VDD RA5/OSC1/CLKIN/T13CKI RA4/AN3/OSC2/CLKOUT RA3/MCLR/VPP RC5/CCP1/P1A RC4/C2OUT/P1B/SRQ RC3/AN7/C12IN3-/P1C/PGM RC6/AN8/SS RC7/AN9/SDO RB7/TX/CK

1 2 3 4 5 6 7 8 9 10

20 19 18 17 16 15 14 13 12 11

VSS RA0/AN0/CVREF/VREF-/C1IN+/INT0/PGD RA1/AN1/C12IN0-/VREF+/INT1/PGC RA2/AN2/C1OUT/T0CKI/INT2/SRQ RC0/AN4/C2IN+ RC1/AN5/C12IN1RC2/AN6/C12IN2-/P1D RB4/AN10/SDI/SDA RB5/AN11/RX/DT RB6/SCK/SCL

20 19 18 17 16 RA3/MCLR/VPP RC5/CCP1/P1A RC4/C2OUT/P1B/SRQ RC3/AN7/C12IN3-/P1C/PGM RC6/AN8/SS 1 2 3 4 5 15 14 13 12 11

RA4/AN3/OSC2/CLKOUT RA5/OSC1/CLKIN/T13CKI VDD VSS RA0/AN0/CVREF/VREF-/C1IN+/INT0/PGD

20-Pin QFN 4x4

PIC18F1XK22/LF1XK22

PIC18F1XK22/ LF1XK22

RA1/AN1/C12IN0-/VREF+/INT1/PGC RA2/AN2/C1OUT/T0CKI/INT2/SRQ RC0/AN4/C2IN+ RC1/AN5/C12IN1RC2/AN6/C12IN2-/P1D

6 7 8 9 10

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RC7/AN9/SDO RB7/TX/CK RB6/SCK/SCL RB5/AN11/RX/DT RB4/AN10/SDI/SDA

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PIC18F1XK22/LF1XK22
3.0 MEMORY MAPS
For the PIC18F14K22/LF14K22 device, the program Flash space extends from 0000h to 03FFFh (16 Kbytes) in two 8-Kbyte blocks. For the PIC18F13K22/LF13K22 device, the program Flash space extends from 0000h to 01FFFh (8 Kbytes) in two 4-Kbyte blocks. For the PIC18F14K22/LF14K22 addresses 0000h through 0FFFh, however, define a Boot Block region that is treated separately from Block 0. For the PIC18F13K22/LF13K22 addresses 0000h through 07FFh, define the Boot Block region. All of these blocks define code protection boundaries within the program Flash space. The size of the Boot Block in the PIC18F14K22/LF14K22 devices can be configured as 2K, or 4 Kbyte (see Figure 3-1). The size of the Boot Block in the PIC18F13K22/LF13K22 devices can be configured as 1K, or 2 Kbytes (see Figure 3-1). This is done through the BBSIZ bit in the Configuration register, CONFIG4L. It is important to note that increasing the size of the Boot Block decreases the size of the Block 0.

TABLE 3-1:
Device

IMPLEMENTATION OF PROGRAM FLASH

Program Flash Size (Bytes) 000000h-001FFFh (8K) 000000h-003FFFh (16K)

PIC18F13K22/ LF13K22 PIC18F14K22/ LF14K22

FIGURE 3-1:

MEMORY MAP AND THE PROGRAM FLASH SPACE FOR PIC18F14K22/LF14K22 DEVICES(1)
000000h Program Flash 01FFFFh MEMORY SIZE/DEVICE 16 Kbytes (PIC18F14K22) BBSIZ = 1 Unimplemented Read as 0 Boot Block(2) BBSIZ = 0 Boot Block(2) 000000h 0007FFh 000800h 000FFFh Block 0 Block 0 001FFFh 200000h 002000h 001000h Address Range

Block 1 Configuration and ID Space

Block 1

003FFFh 004000h

Unimplemented Read 0s

Unimplemented Read 0s

3FFFFFh Note 1: 2: Sizes of memory areas are not to scale. Boot Block size is determined by the BBSIZ bit in the CONFIG4L register.

01FFFFh

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PIC18F1XK22/LF1XK22
FIGURE 3-2: MEMORY MAP AND THE PROGRAM FLASH SPACE FOR PIC18F13K22/LF13K22 DEVICES(1)
000000h Program Flash 01FFFFh MEMORY SIZE/DEVICE 8 Kbytes (PIC18F13K22) BBSIZ = 1 Unimplemented Read as 0 Boot Block(2) BBSIZ = 0 Boot Block(2) 000000h 0003FFh 000400h 0007FFh Block 0 Block 0 000FFFh 200000h 001000h 000800h Address Range

Block 1 Configuration and ID Space

Block 1

001FFFh 002000h

Unimplemented Read 0s

Unimplemented Read 0s

3FFFFFh Note 1: 2: Sizes of memory areas are not to scale. Boot Block size is determined by the BBSIZ bit in the CONFIG4L register.

01FFFFh

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PIC18F1XK22/LF1XK22
In addition to the program Flash space, there are three blocks in the Configuration and ID space that are accessible to the user through table reads and table writes. Their locations in the memory map are shown in Figure 3-3. Users may store identification information (ID) in eight ID registers. These ID registers are mapped in addresses 200000h through 200007h. The ID locations read out normally, even after code protection is applied. Locations 300001h through 30000Dh are reserved for the Configuration bits. These bits select various device options and are described in Section 6.0 Configuration Word. These Configuration bits read out normally, even after code protection. Locations 3FFFFEh and 3FFFFFh are reserved for the device ID bits. These bits may be used by the programmer to identify what device type is being programmed and are described in Section 6.0 Configuration Word. These device ID bits read out normally, even after code protection.

3.0.1

MEMORY ADDRESS POINTER

Memory in the address space, 0000000h to 3FFFFFh, is addressed via the Table Pointer register, which is comprised of three Pointer registers: TBLPTRU, at RAM address 0FF8h TBLPTRH, at RAM address 0FF7h TBLPTRL, at RAM address 0FF6h TBLPTRU Addr[21:16] TBLPTRH Addr[15:8] TBLPTRL Addr[7:0]

The 4-bit command, 0000 (core instruction), is used to load the Table Pointer prior to using any read or write operations.

FIGURE 3-3:
000000h

CONFIGURATION AND ID LOCATIONS FOR PIC18F1XK22/LF1XK22 DEVICES

Program Flash

01FFFFh

ID Location 1 ID Location 2 ID Location 3 ID Location 4 ID Location 5 Unimplemented Read as 0 ID Location 6 ID Location 7 ID Location 8

200000h 200001h 200002h 200003h 200004h 200005h 200006h 200007h

CONFIG1H CONFIG2L 1FFFFFh CONFIG2H CONFIG3H Configuration and ID Space CONFIG4L CONFIG5L CONFIG5H CONFIG6L 2FFFFFh CONFIG6H CONFIG7L CONFIG7H

300001h 300002h 300003h 300004h 300005h 300006h 300007h 300008h 300009h 30000Ah 30000Bh 30000Ch 30000Dh

Device ID1 Device ID2 3FFFFFh

3FFFFEh 3FFFFFh

Note:

Sizes of memory areas are not to scale.

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PIC18F1XK22/LF1XK22
3.1 High-Level Overview of the Programming Process 3.2 Entering and Exiting High-Voltage ICSP Program/Verify Mode

Figure 3-4 shows the high-level overview of the programming process. First, a Bulk Erase is performed. Next, the program Flash, ID locations and data EEPROM are programmed. These memories are then verified to ensure that programming was successful. If no errors are detected, the Configuration bits are then programmed and verified.

As shown in Figure 3-6, the High-Voltage ICSP Program/Verify mode is entered by holding PGC and PGD low and then raising MCLR/VPP/RA3 to VIHH (high voltage). Once in this mode, the program Flash, data EEPROM, ID locations and Configuration bits can be accessed and programmed in serial fashion. Figure 3-7 shows the exit sequence. The sequence that enters the device into the Program/ Verify mode places all unused I/Os in the high-impedance state.

FIGURE 3-4:

HIGH-LEVEL PROGRAMMING FLOW

Start

FIGURE 3-5:

VPP-FIRST PROGRAM/ VERIFY MODE ENTRY

P13 P1 P12

Perform Bulk Erase

Program Memory

D110 MCLR/VPP/RA3

Program IDs

VDD PGD

Program Data EE PGC PGD = Input Verify Program

Note:
Verify IDs

This method of entry is valid, regardless of Configuration Word selected.

Verify Data

FIGURE 3-6:

VDD-FIRST PROGRAM/ VERIFY MODE ENTRY

P13 P1 P12

Program Configuration Bits D110 MCLR/VPP/RA3 VDD PGD PGC

Verify Configuration Bits Done

PGD = Input

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PIC18F1XK22/LF1XK22
FIGURE 3-7: EXITING HIGH-VOLTAGE PROGRAM/VERIFY MODE
P16 MCLR/VPP/RA3 D110 VDD PGM PGD PGD PGC PGC PGD = Input PGD = Input VIH P1 VDD P17 MCLR/VPP/RA3

FIGURE 3-9:

EXITING LOW-VOLTAGE PROGRAM/VERIFY MODE

P16 P18 VIH

3.3

Entering and Exiting Low-Voltage ICSP Program/Verify Mode

When the LVP Configuration bit is 1 (see Section 2.1.1.1 Single-Supply ICSP Programming), the Low-Voltage ICSP mode is enabled. As shown in Figure 3-8, Low-Voltage ICSP Program/Verify mode is entered by holding PGC and PGD low, placing a logic high on PGM and then raising MCLR/VPP/RA3 to VIH. In this mode, the RC3/PGM pin is dedicated to the programming function and ceases to be a general purpose I/O pin. Figure 3-9 shows the exit sequence. The sequence that enters the device into the Program/ Verify mode places all unused I/Os in the high-impedance state.

FIGURE 3-8:

ENTERING LOW-VOLTAGE PROGRAM/VERIFY MODE

P15 VIH P12

MCLR/VPP/RA3

VDD VIH PGM PGD PGC PGD = Input

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PIC18F1XK22/LF1XK22
3.4 Serial Program/Verify Operation
The PGC pin is used as a clock input pin and the PGD pin is used for entering command bits and data input/ output during serial operation. Commands and data are transmitted on the rising edge of PGC, latched on the falling edge of PGC and are Least Significant bit (LSb) first.

3.4.1

4-BIT COMMANDS

All instructions are 20 bits, consisting of a leading 4-bit command followed by a 16-bit operand, which depends on the type of command being executed. To input a command, PGC is cycled four times. The commands needed for programming and verification are shown in Table 3-2. Depending on the 4-bit command, the 16-bit operand represents 16 bits of input data or 8 bits of input data and 8 bits of output data. Throughout this specification, commands and data are presented as illustrated in Table 3-3. The 4-bit command, Most Significant bit (MSb), is shown first. The command operand, or Data Payload, is shown <MSB><LSB>. Figure 3-10 demonstrates how to serially present a 20-bit command/operand to the device.

3.4.2

CORE INSTRUCTION

The core instruction passes a 16-bit instruction to the CPU core for execution. This is needed to set up registers as appropriate for use with other commands.

TABLE 3-2:

COMMANDS FOR PROGRAMMING

Description 4-Bit Command 0000 0010 1000 1001 1010 1011 1100 1101 1110 1111

Core Instruction (Shift in16-bit instruction) Shift out TABLAT register Table Read Table Read, post-increment Table Read, post-decrement Table Read, pre-increment Table Write Table Write, post-increment by 2 Table Write, start programming, post-increment by 2 Table Write, start programming

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PIC18F1XK22/LF1XK22
TABLE 3-3:
4-Bit Command 1101

SAMPLE COMMAND SEQUENCE

Data Payload 3C 40 Core Instruction Table Write, post-increment by 2

FIGURE 3-10:
P2 1 2

TABLE WRITE, POST-INCREMENT TIMING DIAGRAM (1101)

P2A P2B 1 P5 P4

10

11

12

13

14

15

16 P5A

PGC

P3

PGD

0 0

1 3

4-bit Command

4 C 16-bit Data Payload

Fetch Next 4-bit Command

PGD = Input

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PIC18F1XK22/LF1XK22
4.0 DEVICE PROGRAMMING
The code sequence to erase the entire device is shown in Table 4-2 and the flowchart is shown in Figure 4-1. Note: A Bulk Erase is the only way to reprogram code-protect bits from an on state to an off state. Programming includes the ability to erase or write the various memory regions within the device. In all cases, except high-voltage ICSP Bulk Erase, the EECON1 register must be configured in order to operate on a particular memory region. When using the EECON1 register to act on program Flash, the EEPGD bit must be set (EECON1<7> = 1) and the CFGS bit must be cleared (EECON1<6> = 0). The WREN bit must be set (EECON1<2> = 1) to enable writes of any sort (e.g., erases) and this must be done prior to initiating a write sequence. The FREE bit must be set (EECON1<4> = 1) in order to erase the program space being pointed to by the Table Pointer. The erase or write sequence is initiated by setting the WR bit (EECON1<1> = 1). It is strongly recommended that the WREN bit only be set immediately prior to a program or erase.

TABLE 4-2:
4-Bit Command 0000 0000 0000 0000 0000 0000

BULK ERASE COMMAND SEQUENCE

Data Payload 0E 3C 6E F8 0E 00 6E F7 0E 05 6E F6 0F 0F 0E 3C 6E F8 0E 00 6E F7 0E 04 6E F6 8F 8F 00 00 00 00 Core Instruction MOVLW 3Ch MOVWF TBLPTRU MOVLW 00h MOVWF TBLPTRH MOVLW 05h MOVWF TBLPTRL Write 0Fh to 3C0005h MOVLW 3Ch MOVWF TBLPTRU MOVLW 00h MOVWF TBLPTRH MOVLW 04h MOVWF TBLPTRL Write 8F8Fh TO 3C0004h to erase entire device. NOP Hold PGD low until erase completes.

4.1
4.1.1

ICSP Erase
HIGH-VOLTAGE ICSP BULK ERASE

1100 0000 0000 0000 0000 0000 0000 1100 0000 0000

Erasing program Flash or data EEPROM is accomplished by configuring two Bulk Erase Control registers located at 3C0004h and 3C0005h. Program Flash may be erased portions at a time, or the user may erase the entire device in one action. Bulk Erase operations will also clear any code-protect settings associated with the memory block erased. Erase options are detailed in Table 4-1. If data EEPROM is code-protected (CPD = 0), the user must request an erase of data EEPROM (e.g., 0084h as shown in Table 4-1).

TABLE 4-1:

BULK ERASE OPTIONS

Data (3C0005h:3C0004h) 0F8Fh 0088h 0084h 0081h 0082h 0180h 0280h 0480h 0880h

Description Chip Erase Erase User IDs Erase Data EEPROM Erase Boot Block Erase Config Bits Erase Program Flash Block 0 Erase Program Flash Block 1 Erase Program Flash Block 2 Erase Program Flash Block 3

FIGURE 4-1:

BULK ERASE FLOW

Start Write 0F0Fh to 3C0005h

Write 8F8Fh to 3C0004h to Erase Entire Device

Delay P11 + P10 Time Done

The actual Bulk Erase function is a self-timed operation. Once the erase has started (falling edge of the 4th PGC after the NOP command), serial execution will cease until the erase completes (parameter P11). During this time, PGC may continue to toggle but PGD must be held low.

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PIC18F1XK22/LF1XK22
FIGURE 4-2:
1 PGC P5 P5A P5 P5A P11 2 3 4

BULK ERASE TIMING DIAGRAM

P10 1 2 15 16 1 2 3 4 1 2 15 16 1 2 3 4 1 2

PGD

0 Erase Time

4-bit Command

16-bit Data Payload

4-bit Command

16-bit Data Payload

4-bit Command

16-bit Data Payload

PGD = Input

4.1.2

LOW-VOLTAGE ICSP BULK ERASE

4.1.3

ICSP ROW ERASE

When using low-voltage ICSP, the part must be supplied by the voltage specified in parameter D111 if a Bulk Erase is to be executed. All other Bulk Erase details as described above apply. If it is determined that a program memory erase must be performed at a supply voltage below the Bulk Erase limit, refer to the erase methodology described in Section 4.1.3 ICSP Row Erase and Section 4.2.1 Modifying Program Flash. If it is determined that a data EEPROM erase must be performed at a supply voltage below the Bulk Erase limit, follow the methodology described in Section 4.3 Data EEPROM Programming and write 1s to the array.

Regardless of whether high or low-voltage ICSP is used, it is possible to erase one row (64 bytes of data), provided the block is not code or write-protected. Rows are located at static boundaries beginning at program memory address 000000h, extending to the internal program memory limit (see Section 3.0 Memory Maps). The Row Erase duration is self-timed. After the WR bit in EECON1 is set, two NOPs are issued. Erase starts upon the 4th PGC of the second NOP. It ends when the WR bit is cleared by hardware. The code sequence to Row Erase a PIC18F1XK22/ LF1XK22 device is shown in Table 4-3. The flowchart shown in Figure 4-3 depicts the logic necessary to completely erase the PIC18F1XK22/LF1XK22 devices. The timing diagram for Row Erase is identical to the data EEPROM write timing shown in Figure 4-7. Note 1: The TBLPTR register can point at any byte within the row intended for erase. 2: ICSP row erase of the User ID locations is also possible using the technique described in Section 4.1.3 ICSP Row Erase. The address argument used should be 0x200000. A row erase of the User ID locations is required when VDD is below the Bulk Erase threshold.

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PIC18F1XK22/LF1XK22
TABLE 4-3:
4-bit Command

ERASE PROGRAM FLASH CODE SEQUENCE

Data Payload Core Instruction

Step 1: Direct access to program Flash and enable writes. 0000 0000 0000 8E A6 9C A6 84 A6 BSF BCF BSF EECON1, EEPGD EECON1, CFGS EECON1, WREN

Step 2: Point to first row in program Flash. 0000 0000 0000 6A F8 6A F7 6A F6 CLRF CLRF CLRF TBLPTRU TBLPTRH TBLPTRL

Step 3: Enable erase and erase single row. 0000 0000 0000 0000 88 A6 82 A6 00 00 00 00 BSF BSF NOP NOP EECON1, FREE EECON1, WR Erase starts on the 4th clock of this instruction

Step 4: Poll WR bit. Repeat until bit is clear. 0000 0000 0000 0010 50 A6 6E F5 00 00 <MSB><LSB> MOVF EECON1, W, 0 MOVWF TABLAT NOP Shift out data(1)

Step 5: Hold PGC low for time P10. Step 6: Repeat step 3 with Address Pointer incremented by 64 until all rows are erased. Step 7: Disable writes. 0000 Note 1: 94 A6 BCF EECON1, WREN

See Figure 5-4 for details on shift out data timing.

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PIC18F1XK22/LF1XK22
FIGURE 4-3: SINGLE ROW ERASE PROGRAM FLASH FLOW
Start Addr = 0 Configure Device for Row Erases

Perform Erase Sequence

Addr = Addr + 64 WR Bit Clear? Yes No All Rows done? Yes Done No

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PIC18F1XK22/LF1XK22
4.2 Program Flash Programming
Programming program Flash is accomplished by first loading data into the write buffer and then initiating a programming sequence. The write and erase buffer sizes shown in Table 4-4 can be mapped to any location of the same size beginning at 000000h. The actual memory write sequence takes the contents of this buffer and programs the proper amount of program Flash that contains the Table Pointer. The programming duration is externally timed and is controlled by PGC. After a Start Programming command is issued (4-bit command, 1111), a NOP is issued, where the 4th PGC is held high for the duration of the programming time, P9. After PGC is brought low, the programming sequence is terminated. PGC must be held low for the time specified by parameter P10 to allow high-voltage discharge of the memory array. The code sequence to program a PIC18F1XK22/ LF1XK22 device is shown in Table 4-5. The flowchart shown in Figure 4-4 depicts the logic necessary to completely write a PIC18F1XK22/LF1XK22 device. The timing diagram that details the Start Programming command and parameters P9 and P10 is shown in Figure 4-5. Note: The TBLPTR register must point to the same region when initiating the programming sequence as it did when the write buffers were loaded.

TABLE 4-4:

WRITE AND ERASE BUFFER SIZES

Devices Write Buffer Size (bytes) 16 8 Erase Size (bytes) 64 64

PIC18F14K22 PIC18F13K22

TABLE 4-5:
4-bit Command

WRITE PROGRAM FLASH CODE SEQUENCE

Data Payload Core Instruction

Step 1: Direct access to program Flash. 0000 0000 0000 8E A6 9C A6 84 A6 BSF BCF BSF EECON1, EEPGD EECON1, CFGS EECON1, WREN

Step 2: Point to row to write. 0000 0000 0000 0000 0000 0000 0E <Addr[21:16]> 6E F8 0E <Addr[15:8]> 6E F7 0E <Addr[7:0]> 6E F6 MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF <Addr[21:16]> TBLPTRU <Addr[15:8]> TBLPTRH <Addr[7:0]> TBLPTRL

Step 3: Load write buffer. Repeat for all but the last two bytes. 1101 <MSB><LSB> Write 2 bytes and post-increment address by 2.

Step 4: Load write buffer for last two bytes and start programming. 1111 0000 <MSB><LSB> 00 00 Write 2 bytes and start programming. NOP - hold PGC high for time P9 and low for time P10.

To continue writing data, repeat steps 2 through 4, where the Address Pointer is incremented by 2 at each iteration of the loop.

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PIC18F1XK22/LF1XK22
FIGURE 4-4: PROGRAM FLASH FLOW
Start N=1 LoopCount = 0 Configure Device for Writes

N=N+1

Load 2 Bytes to Write Buffer at <Addr>

No

All bytes written? Yes Start Write Sequence and Hold PGC High until Done and Wait P9 Hold PGC Low for Time P10

N=1 LoopCount = LoopCount + 1

No

All locations done? Yes Done

FIGURE 4-5:

TABLE WRITE AND START PROGRAMMING INSTRUCTION TIMING DIAGRAM (1111)

P10 2 3 4 P5 1 2 3 4 5 6 15 16 P5A 1 2 3 P9
(1)

PGC

PGD

0 Programming Time

4-bit Command

16-bit Data Payload

4-bit Command

16-bit Data Payload

PGD = Input

Note 1: Use P9A for Configuration Word programming.

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PIC18F1XK22/LF1XK22
4.2.1 MODIFYING PROGRAM FLASH
The previous programming example assumed that the device has been Bulk Erased prior to programming (see Section 4.1.1 High-Voltage ICSP Bulk Erase). It may be the case, however, that the user wishes to modify only a section of an already programmed device. The appropriate number of bytes required for the erase buffer must be read out of program Flash (as described in Section 5.2 Verify Program Flash and ID Locations) and buffered. Modifications can be made on this buffer. Then, the block of program Flash that was read out must be erased and rewritten with the modified data. The WREN bit must be set if the WR bit in EECON1 is used to initiate a write sequence.

TABLE 4-6:
4-bit Command

MODIFYING PROGRAM FLASH

Data Payload Core Instruction

Step 1: Direct access to program Flash. 0000 0000 8E A6 9C A6 BSF BCF EECON1, EEPGD EECON1, CFGS

Step 2: Read program Flash into buffer (Section 5.1 Read Program Flash, ID Locations and Configuration Bits). Step 3: Set the Table Pointer for the block to be erased. 0000 0000 0000 0000 0000 0000 0000 0000 Step 5: Initiate erase. 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 0000 1101 1111 0000 88 A6 82 A6 00 00 00 00 50 A6 6E F5 00 00 <MSB><LSB> 0E <Addr[21:16]> 6E F8 0E <Addr[8:15]> 6E F7 0E <Addr[7:0]> 6E F6 <MSB><LSB> <MSB><LSB> 00 00 BSF BSF NOP NOP EECON1, FREE EECON1, WR Erase starts on the 4th clock of this instruction 0E <Addr[21:16]> 6E F8 0E <Addr[8:15]> 6E F7 0E <Addr[7:0]> 6E F6 84 A6 88 A6 MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF BSF BSF <Addr[21:16]> TBLPTRU <Addr[8:15]> TBLPTRH <Addr[7:0]> TBLPTRL EECON1, WREN EECON1, FREE

Step 4: Enable memory writes and setup an erase.

Step 6: Poll WR bit. Repeat until bit is clear. MOVF EECON1, W, 0 MOVWF TABLAT NOP Shift out data(1) MOVLW <Addr[21:16]> MOVWF TBLPTRU MOVLW <Addr[8:15]> MOVWF TBLPTRH MOVLW <Addr[7:0]> MOVWF TBLPTRL Write 2 bytes and post-increment address by 2. Repeat as many times as necessary to fill the write buffer Write 2 bytes and start programming. NOP - hold PGC high for time P9 and low for time P10.

Step 7: Load write buffer. The correct bytes will be selected based on the Table Pointer.

To continue modifying data, repeat Steps 2 through 6, where the Address Pointer is incremented by the appropriate number of bytes (see Table 4-4) at each iteration of the loop. The write cycle must be repeated enough times to completely rewrite the contents of the erase buffer. Step 8: Disable writes. 0000 94 A6 BCF EECON1, WREN

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PIC18F1XK22/LF1XK22
4.3 Data EEPROM Programming
FIGURE 4-6: PROGRAM DATA FLOW
Start

Data EEPROM is accessed one byte at a time via an Address Pointer (register EEADR) and a data latch (EEDATA). Data EEPROM is written by loading EEADR with the desired memory location, EEDATA with the data to be written and initiating a memory write by appropriately configuring the EECON1 register. A byte write automatically erases the location and writes the new data (erase-before-write). When using the EECON1 register to perform a data EEPROM write, both the EEPGD and CFGS bits must be cleared (EECON1<7:6> = 00). The WREN bit must be set (EECON1<2> = 1) to enable writes of any sort and this must be done prior to initiating a write sequence. The write sequence is initiated by setting the WR bit (EECON1<1> = 1). The write begins on the falling edge of the 24th PGC after the WR bit is set. It ends when the WR bit is cleared by hardware. After the programming sequence terminates, PGC must be held low for the time specified by parameter P10 to allow high-voltage discharge of the memory array.

Set Address

Set Data

Enable Write

Start Write Sequence

WR bit clear? Yes No done? Yes Done

No

FIGURE 4-7:
1 2 3 4

DATA EEPROM WRITE TIMING DIAGRAM

P10 1 2 15 16 P5A P11A n BSF EECON1, WR 2 NOP commands Poll WR bit, Repeat until Clear (see below) n 1 2

PGC
P5 0 0 0 0 P5A

PGD

4-bit Command

16-bit Data Payload

PGD = Input

15 16 P5A

4 P5

15 16 P5A

PGC
P5

Poll WR bit PGD

0 0 0 0 MOVF EECON1, W, 0 0 0 0 0 MOVWF TABLAT Shift Out Data (see Figure 4-4)

4-bit Command

4-bit Command

PGD = Input

PGD = Output

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PIC18F1XK22/LF1XK22
TABLE 4-7:
4-bit Command

PROGRAMMING DATA MEMORY

Data Payload Core Instruction

Step 1: Direct access to data EEPROM. 0000 0000 9E A6 9C A6 BCF EECON1, EEPGD BCF EECON1, CFGS

Step 2: Set the data EEPROM Address Pointer. 0000 0000 0E <Addr> 6E A9 MOVLW <Addr> MOVWF EEADR

Step 3: Load the data to be written. 0000 0000 0E <Data> 6E A8 MOVLW <Data> MOVWF EEDATA

Step 4: Enable memory writes. 0000 Step 5: Initiate write. 0000 0000 0000 82 A6 00 00 00 00 BSF EECON1, WR NOP NOP ;write starts on 4th clock of this instruction 84 A6 BSF EECON1, WREN

Step 6: Poll WR bit, repeat until the bit is clear. 0000 0000 0000 0010 50 A6 6E F5 00 00 <MSB><LSB> MOVF EECON1, W, 0 MOVWF TABLAT NOP Shift out data(1)

Step 7: Hold PGC low for time P10. Step 8: Disable writes. 0000 94 A6 BCF EECON1, WREN

Repeat steps 2 through 8 to write more data.

Note 1: See Figure 5-4 for details on shift out data timing.

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PIC18F1XK22/LF1XK22
4.4 ID Location Programming
The ID locations are programmed much like the program Flash. The ID registers are mapped in addresses 200000h through 200007h. These locations read out normally even after code protection. Note: The user only needs to fill the first 8 bytes of the write buffer in order to write the ID locations. Table 4-8 demonstrates the code sequence required to write the ID locations. In order to modify the ID locations, refer to the methodology described in Section 4.2.1 Modifying Program Flash. As with program Flash, the ID locations must be erased before being modified.

TABLE 4-8:
4-bit Command 0000 0000 0000 0000 0000 0000 0000 0000 0000 1101 1101 1101 1111 0000

WRITE ID SEQUENCE
Data Payload Core Instruction

Step 1: Direct access to program Flash. 8E A6 9C A6 84 A6 0E 20 6E F8 0E 00 6E F7 0E 00 6E F6 <MSB><LSB> <MSB><LSB> <MSB><LSB> <MSB><LSB> 00 00 BSF EECON1, EEPGD BCF EECON1, CFGS BSF EECON1, WREN MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF Write Write Write Write NOP 20h TBLPTRU 00h TBLPTRH 00h TBLPTRL 2 bytes and post-increment address by 2 bytes and post-increment address by 2 bytes and post-increment address by 2 bytes and start programming. hold PGC high for time P9 and low for

Step 2: Set Table Pointer to ID. Load write buffer with 8 bytes and write.

2. 2. 2. time P10.

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PIC18F1XK22/LF1XK22
4.5 Boot Block Programming 4.6 Configuration Bits Programming
The code sequence detailed in Table 4-5 should be used, except that the address used in Step 2 will be in the following ranges: If BBSIZ = 0: 000000h-0003FFh for PIC18F13K22/LF13K22 000000h-0007FFh for PIC18F14K22/LF14K22 If BBSIZ = 1: 000000h-0007FFh for PIC18F13K22/LF13K22 000000h-000FFFh for PIC18F14K22/LF14K22 Unlike program Flash, the Configuration bits are programmed a byte at a time. The Table Write, Begin Programming 4-bit command (1111) is used, but only 8 bits of the following 16-bit payload will be written. The LSB of the payload will be written to even addresses and the MSB will be written to odd addresses. The code sequence to program two consecutive configuration locations is shown in Table 4-9. See Figure 4-5 for the timing diagram. Note: The address must be explicitly written for each byte programmed. The addresses can not be incremented in this mode.

TABLE 4-9:
4-bit Command 0000 0000 0000 0000 0000 0000 0000 0000 0000 1111 0000 0000 0000 1111 0000
Note 1:

SET ADDRESS POINTER TO CONFIGURATION LOCATION

Data Payload Core Instruction

Step 1: Direct access to configuration memory. 8E A6 8C A6 84 A6 0E 30 6E F8 0E 00 6E F7 0E 00 6E F6 <MSB ignored><LSB> 00 00 0E 01 6E F6 <MSB><LSB ignored> 00 00 BSF EECON1, EEPGD BSF EECON1, CFGS BSF EECON1, WREN MOVLW 30h MOVWF TBLPTRU MOVLW 00h MOVWF TBLPRTH MOVLW 00h MOVWF TBLPTRL Load 2 bytes and start programming. NOP - hold PGC high for time P9 and low for time P10. MOVLW 01h MOVWF TBLPTRL Load 2 bytes and start programming. NOP - hold PGC high for time P9A and low for time P10.

Step 2(1): Set Table Pointer for configuration byte to be written. Write even/odd addresses.

Enabling the write protection of Configuration bits (WRTC = 0 in CONFIG6H) will prevent further writing of Configuration bits. Always write all the Configuration bits before enabling the write protection for Configuration bits.

FIGURE 4-8:

CONFIGURATION PROGRAMMING FLOW

Start Start

Load Even Configuration Address

Load Odd Configuration Address

Program LSB

Program MSB

Delay P9 and P10 Time for Write

Delay P9 and P10 Time for Write

Done

Done

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PIC18F1XK22/LF1XK22
5.0
5.1

READING THE DEVICE

Read Program Flash, ID Locations and Configuration Bits

Program Flash is accessed one byte at a time via the 4-bit command, 1001 (table read, post-increment). The contents of memory pointed to by the Table Pointer (TBLPTRU:TBLPTRH:TBLPTRL) are serially output on PGD.

The 4-bit command is shifted in LSb first. The read is executed during the next 8 clocks, then shifted out on PGD during the last 8 clocks, LSb to MSb. A delay of P6 must be introduced after the falling edge of the 8th PGC of the operand to allow PGD to transition from an input to an output. During this time, PGC must be held low (see Figure 5-1). This operation also increments the Table Pointer by one, pointing to the next byte in program Flash for the next read. This technique will work to read any memory in the 000000h to 3FFFFFh address space, so it also applies to the reading of the ID and Configuration registers.

TABLE 5-1:
4-bit Command 0000 0000 0000 0000 0000 0000 1001

READ PROGRAM FLASH SEQUENCE

Data Payload Core Instruction

Step 1: Set Table Pointer 0E <Addr[21:16]> 6E F8 0E <Addr[15:8]> 6E F7 0E <Addr[7:0]> 6E F6 00 00 MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF Addr[21:16] TBLPTRU <Addr[15:8]> TBLPTRH <Addr[7:0]> TBLPTRL

Step 2: Read memory and then shift out on PGD, LSb to MSb TBLRD *+

FIGURE 5-1:

TABLE READ POST-INCREMENT INSTRUCTION TIMING DIAGRAM (1001)

4 P5

8 P6

10

11

12

13

14

15

16 P5A

PGC
P14

(Note 1) PGD
1 0 0 1 LSb 1 2 3 4 5 6 MSb n n n n

Shift Data Out

Fetch Next 4-bit Command

PGD = Input Note 1:

PGD = Output

PGD = Input

Magnification of the high-impedance delay between PGC and PGD is shown in Figure 5-5.

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PIC18F1XK22/LF1XK22
5.2 Verify Program Flash and ID Locations
The Table Pointer must be manually set to 200000h (base address of the ID locations) once the program Flash has been verified. The post-increment feature of the table read 4-bit command can not be used to increment the Table Pointer beyond the program Flash space. In a 64-Kbyte device, for example, a postincrement read of address FFFFh will wrap the Table Pointer back to 000000h, rather than point to unimplemented address, 010000h.

The verify step involves reading back the program Flash space and comparing it against the copy held in the programmers buffer. Memory reads occur a single byte at a time, so two bytes must be read to compare against the word in the programmers buffer. Refer to Section 5.1 Read Program Flash, ID Locations and Configuration Bits for implementation details of reading program Flash.

FIGURE 5-2:

VERIFY PROGRAM FLASH FLOW

Start

Set TBLPTR = 0

Set TBLPTR = 200000h

Read Low Byte with Post-increment

Read Low Byte with Post-Increment

Read High Byte with Post-increment

Increment Pointer

Read High byte with Post-Increment

Does Word = Expect data? Yes No All program Flash verified? Yes No No Failure, Report Error

Does Word = Expect data? Yes All ID locations verified? Yes Done No Failure, Report Error

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PIC18F1XK22/LF1XK22
5.3 Verify Configuration Bits
FIGURE 5-3:
A Configuration address may be read and output on PGD via the 4-bit command, 1001. Configuration data is read and written in a byte-wise fashion, so it is not necessary to merge two bytes into a word prior to a compare. The result may then be immediately compared to the appropriate configuration data in the programmers memory for verification. Refer to Section 5.1 Read Program Flash, ID Locations and Configuration Bits for implementation details of reading Configuration data.

READ DATA EEPROM FLOW

Start

Set Address

Read Byte

5.4

Read Data EEPROM Memory

Move to TABLAT

Data EEPROM is accessed one byte at a time via an Address Pointer (register EEADR) and a data latch (EEDATA). Data EEPROM is read by loading EEADR with the desired memory location and initiating a memory read by appropriately configuring the EECON1 register. The data will be loaded into EEDATA, where it may be serially output on PGD via the 4-bit command, 0010 (Shift Out Data Holding register). A delay of P6 must be introduced after the falling edge of the 8th PGC of the operand to allow PGD to transition from an input to an output. During this time, PGC must be held low (see Figure 5-4). The command sequence to read a single byte of data is shown in Table 5-2.

Shift Out Data

No

done? Yes Done

TABLE 5-2:
4-bit Command

READ DATA EEPROM MEMORY

Data Payload Core Instruction

Step 1: Direct access to data EEPROM. 0000 0000 9E A6 9C A6 0E <Addr> 6E A9 80 A6 50 A8 6E F5 00 00 <MSB><LSB> BCF EECON1, EEPGD BCF EECON1, CFGS

Step 2: Set the data EEPROM Address Pointer. 0000 0000 MOVLW <Addr> MOVWF EEADR

Step 3: Initiate a memory read. 0000 0000 0000 0000 0010 Note 1: BSF EECON1, RD MOVF EEDATA, W, 0 MOVWF TABLAT NOP Shift Out Data(1) Step 4: Load data into the Serial Data Holding register.

The <LSB> is undefined. The <MSB> is the data.

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PIC18F1XK22/LF1XK22
FIGURE 5-4:
1 PGC P5 P6 P14 (Note 1) PGD 0 1 0 0 LSb 1 2 3 4 5 6 MSb n n n n P5A 2 3 4

SHIFT OUT DATA HOLDING REGISTER TIMING DIAGRAM (0010)

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Note 1) 2 1 3 4

Shift Data Out PGD = Input PGD = Output

Fetch Next 4-bit Command PGD = Input

Note

1:

Magnification of the high-impedance delay between PGC and PGD is shown in Figure 5-5.

FIGURE 5-5:

HIGH-IMPEDANCE DELAY
P3 1 2

5.6

Blank Check

PGC

The term Blank Check means to verify that the device has no programmed memory cells. All memories must be verified: program Flash, data EEPROM, ID locations and Configuration bits. The device ID registers (3FFFFEh:3FFFFFh) should be ignored.

PGD

MSb

n P19

5.5

Verify Data EEPROM

A blank or erased memory cell will read as a 1. Therefore, Blank Checking a device merely means to verify that all bytes read as FFh except the Configuration bits. Unused (reserved) Configuration bits will read 0 (programmed). Refer to Table 6-1 for blank configuration expect data for the various PIC18F1XK22/LF1XK22 devices. Given that Blank Checking is merely code and data EEPROM verification with FFh expect data, refer to Section 5.4 Read Data EEPROM Memory and Section 5.2 Verify Program Flash and ID Locations for implementation details.

A data EEPROM address may be read via a sequence of core instructions (4-bit command, 0000) and then output on PGD via the 4-bit command, 0010 (TABLAT register). The result may then be immediately compared to the appropriate data in the programmers memory for verification. Refer to Section 5.4 Read Data EEPROM Memory for implementation details of reading data EEPROM.

FIGURE 5-6:
Start

BLANK CHECK FLOW

Blank Check Device

Is device blank? No Abort

Yes

Continue

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PIC18F1XK22/LF1XK22
6.0 CONFIGURATION WORD
6.2 Device ID Word
The PIC18F1XK22/LF1XK22 devices have several Configuration Words. These bits can be set or cleared to select various device configurations. All other memory areas should be programmed and verified prior to setting Configuration Words. These bits may be read out normally, even after read or code protection. See Table 6-1 for a list of Configuration bits and device IDs and Table 6-3 for the Configuration bit descriptions. The device ID word for the PIC18F1XK22/LF1XK22 devices is located at 3FFFFEh:3FFFFFh. These bits may be used by the programmer to identify what device type is being programmed and read out normally, even after code or read protection. See Table 6-2 for a complete list of device ID values.

FIGURE 6-1:

READ DEVICE ID WORD FLOW

Start Set TBLPTR = 3FFFFE Read Low Byte with Post-Increment Read High Byte with Post-Increment Done

6.1

ID Locations

A user may store identification information (ID) in eight ID locations mapped in 200000h:200007h. It is recommended that the Most Significant nibble of each ID be Fh. In doing so, if the user code inadvertently tries to execute from the ID space, the ID data will execute as a NOP.

TABLE 6-1:
File Name 300001h 300002h 300003h 300005h 300006h 300008h 300009h 30000Ah 30000Bh 30000Ch 30000Dh 3FFFFEh 3FFFFFh Legend: Note 1: 2:

CONFIGURATION BITS AND DEVICE IDs

Bit 7 IESO MCLRE BKBUG CPD WRTD DEV2 DEV10 Bit 6 FCMEN ENHCPU CPB WRTB EBTRB DEV1 DEV9 Bit 5 PRI_CLK_EN WRTC DEV0 DEV8 Bit 4 PLL_EN BORV1 WDPS3 REV4 DEV7 Bit 3 FOSC3 BORV0 WDPS2 HFOFST BBSIZ REV3 DEV6 Bit 2 FOSC2 BOREN1 WDPS1 LVP REV2 DEV5 Bit 1 FOSC1 BOREN0 WDPS0 CP1 WRT1 EBTR1 REV1 DEV4 Bit 0 FOSC0 PWRTEN WDTEN STVREN CP0 WRT0 EBTR0 REV0 DEV3 Default/ Unprogrammed Value 0010 0111 ---1 1111 ---1 1111 1--- 1--10-- 01-1 ---- --11 11-- ------- --11 111- ------- --11 -1-- ---See Table 6-2 See Table 6-2

CONFIG1H CONFIG2L CONFIG2H CONFIG3H CONFIG4L CONFIG5L CONFIG5H CONFIG6L CONFIG6H CONFIG7L CONFIG7H DEVID1(2) DEVID2(2)

x = unknown, u = unchanged, = unimplemented. Shaded cells are unimplemented, read as 0. These bits are only implemented on specific devices. Refer to Section 3.0 Memory Maps to determine which bits apply based on available memory. DEVID registers are read-only and cannot be programmed by the user.

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PIC18F1XK22/LF1XK22
TABLE 6-2: DEVICE ID VALUE
Device ID Value Device DEVID2 PIC18LF13K22 PIC18LF14K22 PIC18F13K22 PIC18F14K22 Note: 4Fh 4Fh 4Fh 4Fh DEVID1 100x xxxx 011x xxxx 010x xxxx 001x xxxx

The xs in DEVID1 contain the device revision code.

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PIC18F1XK22/LF1XK22
TABLE 6-3:
Bit Name IESO

PIC18F1XK22/LF1XK22 BIT DESCRIPTIONS

Configuration Words CONFIG1H Description Internal External Switchover bit 1 = Internal External Switchover mode enabled 0 = Internal External Switchover mode disabled Fail-Safe Clock Monitor Enable bit 1 = Fail-Safe Clock Monitor enabled 0 = Fail-Safe Clock Monitor disabled Primary Clock Enable bit 1 = Primary Clock enabled 0 = Primary Clock disabled 4 X PLL Enable bit 1 = Oscillator multiplied by 4 0 = Oscillator used directly Oscillator Selection bits 1111 = External RC oscillator, CLKOUT function on OSC2 1110 = External RC oscillator, CLKOUT function on OSC2 1101 = EC oscillator (low) 1100 = EC oscillator, CLKOUT function on OSC2 (low) 1011 = EC oscillator (medium) 1010 = EC oscillator, CLKOUT function on OSC2 (medium) 1001 = Internal RC oscillator, CLKOUT function on OSC2 1000 = Internal RC oscillator 0111 = External RC oscillator 0110 = External RC oscillator, CLKOUT function on OSC2 0101 = EC oscillator (high) 0100 = EC oscillator, CLKOUT function on OSC2 (high) 0011 = External RC oscillator, CLKOUT function on OSC2 0010 = HS oscillator 0001 = XT oscillator 0000 = LP oscillator Brown-out Reset Voltage bits 11 = VBOR set to 1.9V 10 = VBOR set to 2.2V 01 = VBOR set to 2.7V 00 = VBOR set to 3.0V Brown-out Reset Enable bits 11 = Brown-out Reset enabled in hardware only (SBOREN is disabled) 10 = Brown-out Reset enabled in hardware only and disabled in Sleep mode SBOREN is disabled) 01 = Brown-out Reset enabled and controlled by software (SBOREN is enabled) 00 = Brown-out Reset disabled in hardware and software Power-up Timer Enable bit 1 = PWRT disabled 0 = PWRT enabled

FCMEN

CONFIG1H

PRI_CLK_EN

CONFIG1H

PLL_EN

CONFIG1H

FOSC<3:0>

CONFIG1H

BORV<1:0>

CONFIG2L

BOREN<1:0>

CONFIG2L

PWRTEN

CONFIG2L

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PIC18F1XK22/LF1XK22
TABLE 6-3:
Bit Name WDPS<3:0>

PIC18F1XK22/LF1XK22 BIT DESCRIPTIONS (CONTINUED)

Configuration Words CONFIG2H Description Watchdog Timer Postscaler Select bits 1111 = 1:32,768 1110 = 1:16,384 1101 = 1:8,192 1100 = 1:4,096 1011 = 1:2,048 1010 = 1:1,024 1001 = 1:512 1000 = 1:256 0111 = 1:128 0110 = 1:64 0101 = 1:32 0100 = 1:16 0011 = 1:8 0010 = 1:4 0001 = 1:2 0000 = 1:1 Watchdog Timer Enable bit 1 = WDT enabled 0 = WDT disabled (control is placed on SWDTEN bit) MCLR Pin Enable bit 1 = MCLR pin enabled, RA3 input pin disabled 0 = RA3 input pin enabled, MCLR pin disabled HFINTOSC Fast Start 1 = HFINTOSC output is not delayed 0 = HFINTOSC output is delayed until oscillator is stable (IOFS = 1) Enhanced CPU Enable bit 1 = Enhanced CPU enabled 0 = Enhanced CPU disabled Boot Block Size Select bit 1 = 2 kW Boot Block size for PIC18F14K22 (1 kW Boot Block size for PIC18F13K22) 0 = 1 kW Boot Block size for PIC18F14K22 (512 W Boot Block size for PIC18F13K22) Low-Voltage Programming Enable bit 1 = Low-Voltage Programming enabled, RC3 is the PGM pin 0 = Low-Voltage Programming disabled, RC3 is an I/O pin Stack Overflow/Underflow Reset Enable bit 1 = Reset on stack overflow/underflow enabled 0 = Reset on stack overflow/underflow disabled Code Protection bits (Block 1 program Flash area) 1 = Block 1 is not code-protected 0 = Block 1 is code-protected Code Protection bits (Block 0 program Flash area) 1 = Block 0 is not code-protected 0 = Block 0 is code-protected Code Protection bits (Data EEPROM) 1 = Data EEPROM is not code-protected 0 = Data EEPROM is code-protected

WDTEN

CONFIG2H

MCLRE

CONFIG3H

HFOFST

CONFIG3H

ENHCPU

CONFIG4L

BBSIZ

CONFIG4L

LVP

CONFIG4L

STVREN

CONFIG4L

CP1

CONFIG5L

CP0

CONFIG5L

CPD

CONFIG5H

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PIC18F1XK22/LF1XK22
TABLE 6-3:
Bit Name CPB

PIC18F1XK22/LF1XK22 BIT DESCRIPTIONS (CONTINUED)

Configuration Words CONFIG5H Description Code Protection bits (Boot Block memory area) 1 = Boot Block is not code-protected 0 = Boot Block is code-protected Write Protection bits (Block 1 program Flash area) 1 = Block 1 is not write-protected 0 = Block 1 is write-protected Write Protection bits (Block 0 program Flash area) 1 = Block 0 is not write-protected 0 = Block 0 is write-protected Write Protection bit (Data EEPROM) 1 = Data EEPROM is not write-protected 0 = Data EEPROM is write-protected Write Protection bit (Boot Block memory area) 1 = Boot Block is not write-protected 0 = Boot Block is write-protected Write Protection bit (Configuration registers) 1 = Configuration registers are not write-protected 0 = Configuration registers are write-protected Table Read Protection bit (Block 1 program Flash area) 1 = Block 1 is not protected from table reads executed in other blocks 0 = Block 1 is protected from table reads executed in other blocks Table Read Protection bit (Block 0 program Flash area) 1 = Block 0 is not protected from table reads executed in other blocks 0 = Block 0 is protected from table reads executed in other blocks Table Read Protection bit (Boot Block memory area) 1 = Boot Block is not protected from table reads executed in other blocks 0 = Boot Block is protected from table reads executed in other blocks Device ID bits These bits are used with the DEV<2:0> bits in the DEVID1 register to identify part number.

WRT1

CONFIG6L

WRT0

CONFIG6L

WRTD

CONFIG6H

WRTB

CONFIG6H

WRTC

CONFIG6H

EBTR1

CONFIG7L

EBTR0

CONFIG7L

EBTRB

CONFIG7H

DEV<10:3>

DEVID2

DEV<2:0>

DEVID1

Device ID bits These bits are used with the DEV<10:3> bits in the DEVID2 register to identify part number.

REV<4:0> .

DEVID1

Revision ID bits These bits are used to indicate the revision of the device.

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PIC18F1XK22/LF1XK22
7.0 EMBEDDING CONFIGURATION WORD INFORMATION IN THE HEX FILE
Table 7-1 describes how to calculate the checksum for each device. Note: The checksum calculation differs depending on the code-protect setting. Since the program Flash locations read out differently depending on the codeprotect setting, the table describes how to manipulate the actual program Flash values to simulate the values that would be read from a protected device. When calculating a checksum by reading a device, the entire program Flash can simply be read and summed. The Configuration Word and ID locations can always be read.

To allow portability of code, a PIC18F1XK22/LF1XK22 programmer is required to read the Configuration Word locations from the hex file. If Configuration Word information is not present in the hex file, then a simple warning message should be issued. Similarly, while saving a hex file, all Configuration Word information must be included. An option to not include the Configuration Word information may be provided. When embedding Configuration Word information in the hex file, it should start at address 300000h. Microchip Technology Inc. feels strongly that this feature is important for the benefit of the end customer.

7.1

Embedding Data EEPROM Information In the HEX File

To allow portability of code, a PIC18F1XK22/LF1XK22 programmer is required to read the data EEPROM information from the hex file. If data EEPROM information is not present, a simple warning message should be issued. Similarly, when saving a hex file, all data EEPROM information must be included. An option to not include the data EEPROM information may be provided. When embedding data EEPROM information in the hex file, it should start at address F00000h. Microchip Technology Inc. believes that this feature is important for the benefit of the end customer.

7.2

Checksum Computation

The checksum is calculated by summing the following: The contents of all program Flash locations The Configuration Word, appropriately masked ID locations (Only if any portion of program memory is code-protected) The Least Significant 16 bits of this sum are the checksum. Code protection limits access to program memory by both external programmer (code-protect) and code execution (table read protect). The ID locations, when included in a code protected checksum, contain the checksum of an unprotected part. The unprotected checksum is distributed: one nibble per ID location. Each nibble is right justified.

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PIC18F1XK22/LF1XK22
TABLE 7-1:
Device

CHECKSUM COMPUTATION
Code-Protect BBSIZ = 0 None Checksum SUM[0000:01FFF]+SUM[2000:3FFF]+ (CONFIG1L & 00h)+(CONFIG1H & FFh)+(CONFIG2L & 1Fh)+ (CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 88h)+ (CONFIG4L & CDh)+(CONFIG4H & 00h)+(CONFIG5L & 03h)+ (CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+ (CONFIG7L & 03h)+(CONFIG7H & 40h) SUM[0800:1FFF]+SUM[2000:3FFF]+ (CONFIG1L & 00h)+(CONFIG1H & FFh)+(CONFIG2L & 1Fh)+ (CONFIG2H & 1F)+(CONFIG3L & 00h)+ (CONFIG3H & 88h)+ (CONFIG4L & CDh)+(CONFIG4H & 00h)+(CONFIG5L & 03h)+ (CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+ (CONFIG7L & 03h)+(CONFIG7H & 40h)+SUM_ID SUM[2000:3FFF]+ (CONFIG1L & 00h)+(CONFIG1H & FFh)+(CONFIG2L & 1Fh)+ (CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 88h)+ (CONFIG4L & CDh)+(CONFIG4H & 00h)+(CONFIG5L & 03h)+ (CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+ (CONFIG7L & 03h)+(CONFIG7H & 40h)+SUM_ID (CONFIG1L & 00h)+(CONFIG1H & FFh)+(CONFIG2L & 1Fh)+ (CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 88h)+ (CONFIG4L & CDh)+(CONFIG4H & 00h)+(CONFIG5L & 03h)+ (CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+ (CONFIG7L & 03h)+(CONFIG7H & 40h)+SUM_ID SUM[0000:0FFF]+SUM[1000:1FFF]+ (CONFIG1L & 00h)+(CONFIG1H & FFh)+(CONFIG2L & 1Fh)+ (CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 88h)+ (CONFIG4L & CDh)+(CONFIG4H & 00h)+(CONFIG5L & 03h)+ (CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+ (CONFIG7L & 03h)+(CONFIG7H & 40h) SUM[0400:0FFF]+SUM[1000:1FFF]+ (CONFIG1L & 00h)+(CONFIG1H & FFh)+(CONFIG2L & 1Fh)+ (CONFIG2H & 1F)+(CONFIG3L & 00h)+ (CONFIG3H & 88h)+ (CONFIG4L & CDh)+(CONFIG4H & 00h)+(CONFIG5L & 03h)+ (CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+ (CONFIG7L & 03h)+(CONFIG7H & 40h)+SUM_ID SUM[1000:1FFF]+ (CONFIG1L & 00h)+(CONFIG1H & FFh)+(CONFIG2L & 1Fh)+ (CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 88h)+ (CONFIG4L & CDh)+(CONFIG4H & 00h)+(CONFIG5L & 03h)+ (CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+ (CONFIG7L & 03h)+(CONFIG7H & 40h)+SUM_ID (CONFIG1L & 00h)+(CONFIG1H & FFh)+(CONFIG2L & 1Fh)+ (CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 88h)+ (CONFIG4L & CDh)+(CONFIG4H & 00h)+(CONFIG5L & 03h)+ (CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+ (CONFIG7L & 03h)+(CONFIG7H & 40h)+SUM_ID Blank Value C35Bh 0xAA at 0 and Max Address C2B1h

Boot Block

CB3Ah

CAE0h

PIC18F14K22/ PIC18LF14K22

Boot/ Block 0

E537h

E2DFh

All

0337h

0332h

None

E35Bh

E2B1h

Boot Block

E73Ch

E6E2h

PIC18F13K22/ PIC18LF13K22

Boot/ Block 0

F539h

F2E1h

All

0339h

0334h

Legend:

Item CONFIGx SUM[a:b] SUM_ID + &

= = = = =

Description Configuration Word Sum of locations, a to b inclusive Byte-wise sum of lower four bits of all customer ID locations Addition Bit-wise AND

DS41357B-page 32

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2009 Microchip Technology Inc.

PIC18F1XK22/LF1XK22
8.0 AC/DC CHARACTERISTICS TIMING REQUIREMENTS FOR PROGRAM/ VERIFY TEST MODE

Standard Operating Conditions Operating Temperature: 25C is recommended Para m No. D110 D110 A D111 D112 D113 D031 D041 D080 D090 D012 Sym. VIHH VIHL VDD IPP IDDP VIL VIH VOL VOH CIO Characteristic High-Voltage Programming Voltage on MCLR/VPP/RA3 Low-Voltage Programming Voltage on MCLR/VPP/RA3 PIC18F1XK22 (includes Bulk Erase) PIC18LF1XK22 (includes Bulk Erase) Programming Current on MCLR/VPP/RA3 Supply Current During Programming Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Capacitive Loading on I/O pin (PGD) Min. 8 1.80 2.70 2.70 VSS 0.8 VDD VDD 0.7 Max. 9 VDD 5.50 3.60 5 5 0.2 VDD VDD 0.6 50 Units V V V V mA mA V V V V pF IOL = 3.0 mA @ 2.7V IOH = -2.0 mA @ 2.7V To meet AC specifications (Note 1) VDD = 3.6V VDD = 1.8V VDD = 3.6V VDD = 1.8V VDD = 3.6V VDD = 1.8V Conditions

P1 P2 P2A P2B P3 P4 P5 P5A P6 P9 P9A P10 P11 P11A

TR TPGC TPGCL TPGCH TSET1 THLD1 TDLY1

MCLR/VPP/RA3 Rise Time to enter Program/Verify mode Serial Clock (PGC) Period Serial Clock (PGC) Low Time Serial Clock (PGC) High Time Input Data Setup Time to Serial Clock Input Data Hold Time from PGC Delay between 4-bit Command and Command Operand

100 1 40 400 40 400 15 15 40 40 20 1 5 100 5 4

1.0

s ns s ns ns ns ns ns ns ns ns ns ms ms

TDLY1A Delay between 4-bit Command Operand and next 4-bit Command TDLY2 TDLY5 TDLY5
A

Delay between Last PGC of Command Byte to First PGC of Read of Data Word PGC High Time (minimum programming time) PGC High Time PGC Low Time after Programming (high-voltage discharge time) Delay to allow Self-Timed Data Write or Bulk Erase to occur

Externally Timed Configuration Word programming time

TDLY6 TDLY7

s ms ms

TDRWT Data Write Polling Time

Note 1:

Do not allow excess time when transitioning MCLR between VIL and VIHH; this can cause spurious program executions to occur. The maximum transition time is: 1 TCY + TPWRT (if enabled) + 1024 TOSC (for LP, HS, HS/PLL and XT modes only) + 2 ms (for HS/PLL mode only) + 1.5 s (for EC mode only) where TCY is the instruction cycle time, TPWRT is the Power-up Timer period and TOSC is the oscillator period. For specific values, refer to the Electrical Characteristics section of the device data sheet for the particular device.

2009 Microchip Technology Inc.

Advance Information

DS41357B-page 33

PIC18F1XK22/LF1XK22
8.0 AC/DC CHARACTERISTICS TIMING REQUIREMENTS FOR PROGRAM/ VERIFY TEST MODE (CONTINUED)

Standard Operating Conditions Operating Temperature: 25C is recommended Para m No. P12 P12A P13 P13A P14 P15 P16 P17 P18 P19 P20 Sym. THLD2 THLD2
A

Characteristic Input Data Hold Time from MCLR/VPP/RA3 Input Data Hold Time from MCLR/VPP/RA3 VDD Setup Time to MCLR/VPP/RA3 VDD Setup Time to MCLR/VPP/RA3 Data Out Valid from PGC PGM Setup Time to MCLR/VPP/RA3 Delay between Last PGC and MCLR/VPP/RA3 MCLR/VPP/RA3 to VDD MCLR/VPP/RA3 to PGM Delay from PGC to PGD High-Z Hold time after VPP changes

Min. 2 70 100 70 10 2 0 0 3 5

Max. 100 10

Units s s ns s ns s s ns s nS s

Conditions

PIC18F1XK22 Only. Refer to Figure 2.1.1.

TSET2 TSET2
A

PIC18F1XK22 Only. Refer to Figure 2.1.1.

TVALID TSET3 TDLY8 THLD3 THLD4 THIZ TPPDP

Note 1:

Do not allow excess time when transitioning MCLR between VIL and VIHH; this can cause spurious program executions to occur. The maximum transition time is: 1 TCY + TPWRT (if enabled) + 1024 TOSC (for LP, HS, HS/PLL and XT modes only) + 2 ms (for HS/PLL mode only) + 1.5 s (for EC mode only) where TCY is the instruction cycle time, TPWRT is the Power-up Timer period and TOSC is the oscillator period. For specific values, refer to the Electrical Characteristics section of the device data sheet for the particular device.

DS41357B-page 34

Advance Information

2009 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices: Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchips Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as unbreakable.

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchips code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyers risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.

Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, rfPIC, SmartShunt and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, nanoWatt XLP, PICkit, PICDEM, PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. 2009, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper.

Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Companys quality system processes and procedures are for its PIC MCUs and dsPIC DSCs, KEELOQ code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchips quality system for the design and manufacture of development systems is ISO 9001:2000 certified.

2009 Microchip Technology Inc.

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DS41357B-page 35

WORLDWIDE SALES AND SERVICE

AMERICAS
Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Cleveland Independence, OH Tel: 216-447-0464 Fax: 216-447-0643 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509

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EUROPE
Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820

03/26/09

DS41357B-page 36

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