Ordering number : ENA1816 SFT1440

SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET

SFT1440 General-Purpose Switching Device

Applications
Features
• ON-resistance RDS(on)=6.2Ω(typ.)

Specifications
Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS 600 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID 1.5 A
Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% 6.0 A
1.0 W
Allowable Power Dissipation PD
Tc=25°C 20 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

Package Dimensions Package Dimensions

unit : mm (typ) unit : mm (typ)
7518-004 7003-004

6.5 2.3 6.5 2.3

5.0 0.5 5.0 0.5
1.5

1.5

4 4
7.0

7.0
5.5

5.5

1.2

0.85 0.85 0.5

0.7
2.5

1.2
0.8
0.8
1.6

1 2 3
7.5

0.6 0.5 0.6 0 t o 0.2

1 : Gate 1 : Gate
1.2
2 : Drain 2 : Drain
1 2 3 3 : Source
3 : Source
4 : Drain 4 : Drain
2.3 2.3

2.3 2.3 SANYO : TP SANYO : TP-FA

Product & Package Information Product & Package Information Electrical Connection
• Package : TP • Package : TP-FA 2,4

• JEITA, JEDEC : SC-64, TO-251, SOT553 • JEITA, JEDEC : SC-63, TO-252, SOT428
• Minimum Packing Quantity : 500 pcs./bag • Minimum Packing Quantity : 700 pcs./reel
Marking(TP, TP-FA) T1440 Packing Type(TP-FA) : TL
1

LOT No.

TL 3

http://semicon.sanyo.com/en/network
81110PE TK IM TC-00002437 No. A1816-1/4
 SFT1440

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 600 V
Zero-Gate Voltage Drain Current IDSS VDS=480V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±24V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.0 5.0 V
Forward Transfer Admittance | yfs | VDS=10V, ID=0.8A 1.0 S
Static Drain-to-Source On-State Resistance RDS(on) ID=0.8A, VGS=10V 6.2 8.1 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 130 pF
Output Capacitance Coss VDS=30V, f=1MHz 25 pF
Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 4.0 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9.1 ns
Rise Time tr See specified Test Circuit. 15 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 18 ns
Fall Time tf See specified Test Circuit. 19 ns
Total Gate Charge Qg VDS=300V, VGS=10V, ID=1.5A 6.3 nC
Gate-to-Source Charge Qgs VDS=300V, VGS=10V, ID=1.5A 1.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=300V, VGS=10V, ID=1.5A 3.6 nC
Diode Forward Voltage VSD IS=1.5A, VGS=0V 0.85 1.2 V

Switching Time Test Circuit

VIN VDD=200V
10V
0V
ID=0.8A
VIN RL=250Ω
D VOUT
PW=10μs
D.C.≤1%
G

SFT1440
P.G 50Ω S

ID -- VDS ID -- VGS
2.0 2.0
VDS=10V
5°C
V
10

1.8 8V 1.8
25°C
Tc= --2

V
1.6 15 7V 1.6
Drain Current, ID -- A

Drain Current, ID -- A

1.4 1.4
75°C
1.2 1.2

1.0 1.0

0.8 0.8

0.6 0.6
6V
0.4 0.4

0.2 0.2
VGS=5V
0 0
0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Drain-to-Source Voltage, VDS -- V IT15875 Gate-to-Source Voltage, VGS -- V IT15876

No. A1816-2/4
 SFT1440
RDS(on) -- VGS RDS(on) -- Tc
20 18
Ta=25°C
18 16
On-State Resistance, RDS(on) -- Ω

On-State Resistance, RDS(on) -- Ω

16 ID=0.8A 14

14 12

12 10
Static Drain-to-Source

Static Drain-to-Source
10 8

8 6

6 4

4 2

2 0
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 --60 --40 --20 0 20 40 60 80 100 120 140 160
Gate-to-Source Voltage, VGS -- V IT15877 Case Temperature, Tc -- °C IT15878
| yfs | -- ID IS -- VSD
3 3
VDS=10V 2 VGS=0V
2
Forward Transfer Admittance, | yfs | -- S

1.0
1.0 7
5
7

Source Current, IS -- A
3
5 °C
25 2
3
0.1
2 C 7
5°
--2 5
=

C
Tc

5°C

25°C
°C 3

--25°
0.1
75 2

7
7

Tc=
5 0.01
7
3 5

2 3
2
0.01 0.001
0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 0.2 0.4 0.6 0.8 1.0 1.2
Drain Current, ID -- A IT15879 Diode Forward Voltage, VSD -- V IT15880
SW Time -- ID Ciss, Coss, Crss -- VDS
100 7
VDD=200V 5 f=1MHz
7 VGS=10V
3
Switching Time, SW Time -- ns

2
5 Ciss
Ciss, Coss, Crss -- pF

100
tf

7
3 5
td (off) 3
Coss
2 2

tr 10
7
td(on) 5 Crss
10
3
7 2

5 1.0
0.1 2 3 5 7 1.0 2 3 0 5 10 15 20 25 30 35 40 45 50
Drain Current, ID -- A IT15893 Drain-to-Source Voltage, VDS -- V IT15894
VGS -- Qg ASO
16 10
VDS=300V 7 IDP=6.0A (PW≤10μs)
ID=1.5A 5 10
14 μs
Gate-to-Source Voltage, VGS -- V

3 10
0μ
12 2 ID=1.5A 1m s
Drain Current, ID -- A

10 s
1.0 DC 10 m
10 7 0m s
op s
5 era
tio
8 3 n(
2 Operation in Ta
=2
6 this area is 5°
0.1
C )
7
limited by RDS(on).
4 5
3
2
2 Tc=25°C
0 0.01
Single pulse
0 1 2 3 4 5 6 7 8 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Total Gate Charge, Qg -- nC IT15895 Drain-to-Source Voltage, VDS -- V IT15884

No. A1816-3/4
 SFT1440
PD -- Ta PD -- Tc
Allowable Power Dissipation, PD -- W 1.2 25

Allowable Power Dissipation, PD -- W

1.0
20

0.8
No 15
he
0.6 at
sin
k
10
0.4

5
0.2

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT15885 Case Temperature, Tc -- °C IT15886

Note on usage : Since the SFT1440 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.

This catalog provides information as of August, 2010. Specifications and information herein are subject
to change without notice.

PS No. A1816-4/4