Question Bank - Ph3202-Eee Physics For Electrical Engineering
Question Bank - Ph3202-Eee Physics For Electrical Engineering
PART-B
PART-B
PART-A
1. What do you mean by recombination of charge carriers?
2. Discuss the variation of fermi level with temperature and impurity for p –type
semiconductor.
3. Discuss the variation of fermi level with temperature and impurity for n –type
semiconductor.
4. Write the difference between Indirect and Direct band gap semiconductor.
5. Write the difference between p- type and n-type semiconductor.
6. Write the principle of Ohmic contact.
7. Write the properties of semiconducting materials.
PART-B
1. Derive the expression for carrier concentration of intrinsic semiconductor.
2. Derive the expression for carrier concentration in n-type semiconductor and
explain the variation of fermi energy level with temperature and impurity.
3. Derive the expression for carrier concentration in p-type semiconductor and
explain the variation of fermi energy level with temperature and impurity.
4. What is Hall Effect? Obtain an expression for Hall coefficient for n-type
and p-type semiconductor.
5. Explain the principle, working of Schottky diode and applications of
schottky diode
PART-A
PART-A
1. What is meant by quantum confinement?
2. Define Ballistic Transport.
3. What is meant by tunneling?
4. Define the term quantum well, quantum wire and quantum dot.
5. What is spintronics ?
6. What are the applications of quantum well laser?
PART-B
1. Derive an expression for density of states for quantum well, quantum wire
and quantum dot.
2. Explain the principle, construction and working of the Single electron
transistor with Single electron phenomena.
3. Describe the principle, construction and working of a quantum well laser.
4. Explain the types , properties and applications of Carbon nanotubes.
5. Explain spintronics and write the applications of spintronics