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COM/MACRO PHOTO

Monolithic Bidirectional
Power Transistors
Opening New Horizons in Power Electronics

by Jonas Huber and Johann W. Kolar

T
oday’s global megatrends—loosely defined as long-term trends that
shape societies and economies worldwide—include, e.g., the transition
to a fully renewable energy supply and the establishment of evermore
stringent efficiency requirements for industry. Similarly, the trend of
rapid global urbanization creates a need for sustainable mobility. The
digital disruption contributes to increased electricity demand but on the other hand
enables solutions such as smart energy networks or design, control, and

Digital Object Identifier 10.1109/MPEL.2023.3234747

Date of publication: 3 March 2023

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FIG 1 Examples of converter topologies that require switching elements with bipolar voltage blocking and bidirectional current
conduction capability, i.e., bidirectional switches (BDSs). (a) Vienna rectifier [1], a widely-used boost-type (note the grid-side
boost inductors) topology for power-factor-correcting rectifiers. (b) Direct matrix converter [2], [3], an ac–ac motor drive topol-
ogy with only nine BDSs.

monitoring systems supported by artificial intelligence (AI). Both broad categories of power electronic converters,
Ultimately, future energy systems should seamlessly inte- i.e., grid interfaces and motor drive systems, comprise
grate, e.g., renewable energy sources, electric mobility, and widely used topologies that require switching elements
industrial plants, i.e., they will be mostly electric. with the capability of bipolar voltage blocking in the off
Power electronics is a key enabling technology for this state and bidirectional current conduction in the on state,
transition to an all-electric society. Power electronic sys- i.e., bidirectional switches (BDSs). Figure 1 shows two
tems are and will be ubiquitous—be it as grid interfaces prominent examples: the Vienna rectifier (VR) [1] is a uni-
for datacenter power supplies (datacenters and data trans- directional three-phase, three-level ac–dc grid interface,
mission networks consumed about 2%–3% of the world’s widely used in telecom power supplies or EV chargers.
2020 electricity production) or ultra-fast electric vehicle The direct matrix converter (DMC) [2], [3] realizes ac–ac
(EV) charging stations (the U.S. government targets a 50% conversion for motor drives with only nine BDSs.
EV market share by 2030), or as smart motor drives for However, none of the common power semiconductor
industry automation (45% of all electricity powers elec- devices [Figure 2(a)–(e)] provides the BDS functionality
tric motors, driving a wide variety of loads from pumps to that these two—and many more—converter topologies
highly dynamic actuators in robotics applications). require. Therefore, today’s implementations must employ

FIG 2 Common power semiconductors and their v-i characteristics. (a) Diode. (b) Thyristors (without turn-off capability), (c) GTOs
and IGCTs (with turn-off capability), and (d) RB-IGBTs (with reverse-blocking capability) can support both blocking voltage polarities
but conduct only one current direction. (e) MOSFETs, in contrast, can conduct current in both directions but only support one
polarity of the blocking voltage. For a given blocking voltage rating and a given chip area A, an on-state resistance of Ron results. (f)
An inverse-series connection of two MOSFETs realizes BDS functionality but with a total resistance of 2 Ron; (g) paralleling a second
such inverse-series arrangement again results in a total resistance of Ron but requires a chip area of 4 A, i.e., four times that of a
single transistor. (h) Dual-gate single-drift-region monolithic bidirectional switch (MBDS) with a single drift region used for blocking
either voltage polarity, thus providing BDS functionality with a total on-state resistance Ron and only a minor increase of the chip
area compared to a standard device without reverse-blocking capability.

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combinations of existing discrete devices. For example, or, alternatively, it might be integrated into the grid inter-
an inverse-series connection of two MOSFETs achieves face, which then realizes single-stage isolated ac–dc con-
BDS functionality [Figure 2(f)], but the total on-state version as shown in Figure 3(b). In both cases,
resistance increases to twice that of a single device. To bidirectional power flow capability may or may not be
prevent this, a second such inverse-series arrangement required. Finally, dc–ac grid interfaces connect renewable
must be connected in parallel [Figure 2(g)]. Thus, realiz- energy sources such as PV to the mains [Figure 3(c)] and
ing BDS functionality with conventional power semicon- thus provide power flow from the dc to the ac side. Vari-
ductors, specifically with MOSFETs, comes at the price of ous converter topologies for such three-phase grid inter-
a fourfold increase in chip area usage. faces will strongly benefit from the availability of MBDSs,
This factor-of-four penalty has, to some extent, hin- as will be outlined in the following.
dered the two circuit topologies shown in Figure 1 from
exploiting their full potential and might have slowed down Third-Harmonic-Injection Rectifiers
the adoption of further topologies discussed through- The simplest way of realizing unidirectional ac–dc conver-
out the article, which otherwise would offer significant sion is a passive diode rectifier. However, the resulting
advantages such as direct ac–ac conversion. With mono- low-frequency mains current distortions are usually not
lithic bidirectional switches (MBDSs) and, in particular, acceptable. The integrated-active-filter (IAF) rectifier [4]
MBDSs with a single shared drift region for blocking shown in Figure 4(a) extends the diode bridge by a high-
either voltage polarity and two gates (one for controlling frequency-(HF)-operated bridge-leg, an inductor, and
each blocking voltage polarity) as shown in Figure 2(h) three phase-selector BDSs operated at mains frequency,
nearing market entry, a reevaluation of these converter which allows to inject a third-harmonic current into the
topologies becomes necessary. It is important to high- phase with the lowest voltage (absolute value) and hence
light that even though the common acronym MBDS only achieve sinusoidal grid currents and power factor correc-
includes the functionality (BDS) and the realization (M) tion (PFC) functionality. The dc output voltage, however,
but not the key aspect of having just a single drift region, is defined by the difference of the maximum and the mini-
in the following MBDS refers to dual-gate single-drift- mum grid phase voltages and hence not controlled. Out-
region devices like that shown in Figure 2(h) [see also put voltage control could be achieved by connecting a
the specific example in Figure 15(a)], unless stated other- buck converter stage, or, advantageously, by integration of
wise. Focusing on the two key application areas of power that buck stage and the IAF’s HF-operated bridge-leg,
electronics mentioned above (grid interfaces and motor which results in the Swiss rectifier [5] shown in Fig-
drives), this article gives an overview on converter fami- ure 4(b). Whereas the Swiss rectifier is a buck-type ac–dc
lies that will benefit from MBDSs and briefly discusses converter, i.e., the dc output voltage cannot exceed Vdc ≤
most recent MBDS device concepts. √2/3 Vg,ll (Vg,ll is the rms line-to-line grid voltage), a comple-
mentary, i.e., a boost-type (Vdc ≥ √2Vg,ll) version can be
Three-Phase Grid Interfaces realized [6], too, as shown in Figure 4(c).
Three-phase ac–dc grid interfaces are widely used in
generic power supply applications (e.g., telecommunica- Vienna Rectifier/T-Type Inverter
tion equipment, etc.) or, as shown in Figure 3, for EV bat- In the IAF rectifier, the grid voltage defines the conduc-
tery charging. Typically, galvanic isolation is realized with tion state of the diode bridge (i.e., it is line-commutated)
a dedicated isolated dc–dc converter stage [Figure 3(a)], and hence the dc output voltage. Shifting the IAF rectifi-
er’s inductor to the ac side (one per phase) decouples the
diode bridge from the grid and hence allows to define its
switching state using the phase-selector switches (i.e., it is
forced-commutated) that are then directly connected to a
capacitive dc-link midpoint. The resulting Vienna rectifier
(VR) topology [1] mentioned above and shown in Fig-
ure 5(a) thus achieves sinusoidal grid currents and a con-
trolled dc output voltage using HF pulse-width
modulation (PWM) of the phase-selector switches. The
VR is a widely used boost-type PFC rectifier that advanta-
geously features three-level bridge-legs (each switch-node
can be connected to p, n or m, depending on the switching
state and the phase current direction) and thus reduced
FIG 3 Examples of three-phase grid interfaces. (a) Non-isolated grid-side filtering effort. Note that the MBDSs need to
ac–dc rectifier with a dc–dc isolation stage or (b) isolated sin-
block only half of the total dc output voltage, which, e.g.,
gle-stage ac–dc converter for EV battery charging. (c) Non-iso-
lated dc–ac grid interface with opposite power flow direction allows to use ±600 V GaN MBDSs in a VR interfacing a
for connecting a PV plant to the three-phase mains. 400 V grid to an 800 V dc output [7]. Alternatively, the

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FIG 4 Third-harmonic-injection rectifiers. (a) Integrated-active-filter (IAF) PFC rectifier without dc voltage control [4]. (b) Swiss recti-
fier [5] and (c) its boost-type variant [6].

FIG 5 (a) Vienna rectifier (VR) [1]. (b) Delta-switch rectifier [8]. (c) Bidirectional three-level T-type rectifier/inverter [7], [9].

delta-switch rectifier [8] shown in Figure 5(b) does not diode providing bipolar voltage blocking but only uni-
require a dc-bus midpoint connection but stresses the directional current conduction capability. A dual-gate
MBDSs with the full dc output voltage. Finally, the VR MBDS provides additional flexibility, especially bidi-
diodes can be replaced by transistors (rated for the full dc rectional current conduction. This is required in the
output voltage) to obtain the well-known T-type [7], [9] CSR-based buck–boost topology [12] shown in Figure
structure from Figure 5(c), which supports bidirectional 6(d) if bidirectional power flow should be supported and
power flow. hence, due to the fixed polarity of the dc output voltage,
both dc-link current directions are needed. Note that
Three-Phase Buck–Boost PFC Rectifiers the main magnetic components (i.e., the dc-link inductor
Typical EV battery voltage ratings vary between 400 and and the first-stage common-mode filter inductor) can be
800 V, and the actual battery voltage changes with the shared between the CSR and the dc–dc converter stage,
state of charge. Therefore, universal EV battery chargers facilitating improved power density and reduced imple-
must provide a wide dc output voltage range, e.g., from mentation effort compared to the boost–buck VSR topol-
200 to 1000 V as indicated in Figure 6(a). This wide output ogy. On the other hand, the buck–boost CSR’s MBDSs
voltage range must typically be provided by the ac–dc grid must block the grid line-to-line voltage, i.e., ±900 or
interface (at least partly if an isolated dc–dc converter ±1200 V devices are needed for 400 V grid applications
with a certain regulation capability is employed, fully in (compared to the ±600 V rating of the VR’s MBDSs men-
case of emerging non-isolated EV chargers), i.e., it must tioned earlier).
provide buck–boost functionality. A first option to achieve
this is the combination of a boost-type PFC rectifier, spe- Isolated Three-Phase Grid Interfaces
cifically a (bidirectional) VR, and a buck-type three-level The fully symmetric (if realized with MBDSs) structure of
dc–dc stage as shown in Figure 6(b). the CSR stage discussed above opens the possibility of
The VR is a voltage-source rectifier (VSR), i.e., it fea- advantageously integrating galvanic isolation into the ac–
tures a dc-link capacitor providing a constant voltage for dc stage [see also Figure 3(b)], resulting in the isolated
the converter bridge-legs. Intuitively, it can be expected single-stage matrix-type ac–dc dual active bridge (DAB)
that a dual topology, i.e., a current-source rectifier (CSR) converter [13], [14] shown in Figure 7(a). The CSR stage
with a constant dc-link current exists, too. The duality can synthesize an amplitude-modulated (six-pulse shape)
relationship between the two topologies has been for- primary-side HF transformer voltage from sections of the
mally described on the switch and topology level [10], line-to-line voltages and employ the freewheeling state to
[11] and Figure 6(c) shows, as an example, the duality compensate for that amplitude variation. Like a DAB, the
between the MOSFET switching element used in VSRs CSR stage thus shapes the transformer current together
and its dual, a series connection of a transistor and a with the secondary-side full-bridge to realize a desired

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FIG 6 (a) Output voltage/current operating range for general purpose EV charger modules, indicating the need for buck–boost
functionality of the grid interface. (b) Voltage-source boost-buck rectifier based on a (boost-type) VR and a buck-type three-level
dc–dc stage. (c) Duality relation [10], [11] between a switching device with unipolar blocking and bidirectional current conduction
capability and one with bipolar voltage blocking but unidirectional current conduction capability; a dual-gate MBDS can mimic
both functionalities. (d) Current-source buck–boost rectifier topology [12], i.e., a buck-type current-source rectifier combined with a
three-level boost-type dc–dc converter; note the advantageous sharing of the main magnetic components between the stages.

(constant) power transfer while achieving optimization isolation exist, e.g., the Vienna rectifier II [15] with unidi-
targets such as minimum rms current or soft-switching of rectional power flow capability as shown in Figure 7(b).
the power semiconductors. Finally, the CSR stage’s
switching sequences ensure that in each switching period Single-Phase Grid Interfaces
the HF transformer current is distributed to all three input Allow a brief digression from the article’s focus on three-
phases such that sinusoidal local average grid currents phase systems: there are, of course, also single-phase grid
and thus a constant three-phase power flow result. Note interfaces that benefit from MBDSs. For example, the iso-
that also variants of the VR with integrated galvanic lated matrix-type ac–dc DAB topology from Figure 7(a)
can also be realized with a single-phase ac interface [16].
Regarding single-phase PV microinverters, non-isolated
topologies are of high interest due to high efficiency and
comparably lower realization effort. However, suitable
topologies should not generate a HF common-mode (CM)
voltage at the dc output terminals, which would drive sig-
nificant leakage currents through the PV panel’s relatively
large earth capacitance. The Highly Efficient and Reliable
Inverter Concept (HERIC) [17] shown in Figure 8 uses an
ac-side BDS switch, operated at the mains frequency, to
realize the freewheeling states needed for the sinusoidal
shaping of the grid current, which ultimately eliminates
any HF CM voltage at the dc output terminals.

Motor Drive Systems

Variable-speed drives (VSDs) are a second key application
area of power electronics. As mentioned earlier, VSDs are
used, e.g., to efficiently drive simple pump and blowers
under varying load conditions, in EV traction chains, and in
FIG 7 (a) Bidirectional matrix-type ac–dc dual active bridge
highly dynamic industry automation and robotics applica-
(DAB) converter [13], [14]. (b) Unidirectional Vienna tions. Wide-bandgap (WBG) power semiconductors have
rectifier II [15]. the potential of significantly improving the efficiency of

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such motor drive systems, however, at the price of inher-
ently steeper slopes of the switched voltages (higher dv/dt).
Therefore, WBG-based VSDs must typically be equipped
with output filters to achieve motor-friendly continuous out-
put voltages (or at least dv/dt-limitation), which prevents
issues such as reflections on long motor cables and result-
ing transient overvoltage isolation stresses, HF common-
mode ground currents that degrade bearing lifetime, and it
facilitates electromagnetic compatibility (EMC) without the FIG 8 Highly Efficient and Reliable Inverter Concept (HERIC) for
single-phase non-isolated PV inverters [17].
need for expensive shielded motor cables. As WBG devices
allow much higher switching frequencies, the output filters
can be comparably small. It has been demonstrated that the
overall efficiency of a GaN-based drive system with LC out-
put filter is higher than that of a conventional IGBT-based
drive system without output filter [18], also due to the lower
harmonic motor losses resulting from the GaN-based drive’s
smooth sinusoidal output voltages. Finally, there is a clear
trend towards integrating VSDs directly with the motor [19]
to simplify the interfaces and facilitate plug-and-play capa-
bility, i.e., high compactness and high efficiency due to typi-
cally constrained cooling possibilities in close proximity to
the motor are further key features of future VSDs. Figure 9
gives a conceptual overview on typical motor drive configu-
rations, i.e., dc–ac inverters, possibly with buck–boost func-
tionality when operating from batteries or fuel cells, and
grid-connected ac–ac VSDs. Again, for all cases with their
partly differing requirements there are converter topologies FIG 9 Variable-speed drive (VSD) system concepts. (a) Motor
that require BDSs and hence will significantly benefit from inverter operating from a (shared) dc bus. (b) Operating from a
the availability of MBDSs. battery (or a fuel cell) with a strongly load-dependent dc volt-
age requires a dc–ac inverter with buck–boost functionality.
(c) Grid-connected ac–ac VSD.
DC–AC Motor Drive Inverters
Figure 10(a) shows a voltage-source inverter (VSI) with
an LC output filter to achieve smooth sinusoidal motor switching losses are minimized by clamping one phase at
voltages. Note that the basic VSI topology is limited to all times (synergetic control of the two stages) [20].
buck operation, i.e., the peak motor line-to-line voltage
cannot exceed the dc input voltage. However, if the VSD AC–AC Motor Drives
operates from a battery or a fuel cell, which show signifi- Thyristor-based line-commutated inverters (LCI), as shown
cant voltage variation depending on the state of charge or in Figure 11(a), have been used in ac–ac motor drives since
the load current, buck–boost functionality might be the 1970s and, typically in the megawatt power range, still
required to always provide sufficiently high output volt- are today. However, as the name implies, LCIs rely on
ages for operating the motor over the full speed range. externally defined ac voltages for the commutation of the
Thus, the VSI could be complemented by a dc–dc boost thyristors, i.e., they only work with synchronous machines
stage as shown in Figure 10(b). Note that three-level and the switching frequency is fixed by the grid/motor fun-
topologies, i.e., bidirectional versions of some of the recti- damental frequencies. Modern power semiconductors with
fier topologies discussed above, could be employed, too, turn-off capability facilitate current-source converters
e.g., the T-type topology from Figure 5(c) or, including the (CSCs, i.e., back-to-back connections of a CSR and a CSI
dc–dc stage, from Figure 6(b). with a shared dc-link inductor) with PWM operation of the
On the other hand, current-source inverters (CSIs) as rectifier and the inverter stages, resulting in advantages
shown in Figure 10(c) require BDSs but inherently provide such as smaller dc-link inductors, higher control band-
sinusoidal output voltages with only a single main mag- width, and improved harmonic performance [21]. However,
netic component (the dc-link inductor) [19], [20]. Further, a note that unlike bidirectional CSRs, where the polarity of
dc–dc buck input stage is required to generate the dc-link the dc-side voltage is fixed due to the dc output, ac–ac
current from the available dc input voltage (shared bus, CSCs can process both power flow directions with the
battery, etc.), i.e., the topology inherently features buck– same, fixed dc-link current direction (note also the LCI’s
boost capability. Note that the dc–dc stage can advanta- thyristors) by simply changing the polarity of the dc-side
geously shape the dc-link current such that the CSI stages’ voltages of their CSR and CSI stages.

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FIG 10 Motor drive inverters operating from a (possibly shared) dc bus [see Figure 9(a) and (b)]. (a) Voltage-source inverter (VSI)
with LC output filter and thus sinusoidal motor voltages. (b) VSI with a dc–dc boost input stage to achieve boost–buck functionality.
(c) Current-source inverter (CSI) with inherently sinusoidal output voltages and buck–boost functionality (note that the dc–dc buck
stage is needed for voltage-to-current conversion).

FIG 11 (a) Motor drive based on line-commutated inverters (LCI). (b) Realization of the minimum required functionality (bipolar
voltage blocking but only unidirectional current conduction) for ac–ac current-source converters (CSCs) without the drawback of
(b.i) a high-voltage series diode by using (b.ii) MBDSs and, to reduce complexity, (b.iii) advanced self-switching gate drives [23] or
(b.iv) a cascode configuration of a MBDS and a low-voltage Schottky diode (self-reverse-blocking MBDS, SRB-MBDS) [22];
(c) SRB-MBDS-based ac–ac CSC.

Therefore, the full functionality of a dual-gate MBDS MBDS (featuring one normally-on gate) and a low-voltage
is not strictly needed, but only that of a transistor with Schottky diode can provide the same functionality with-
a series diode [see Figure 11(b)]. Advantageously, this out sensing electronics, i.e., it achieves a self-reverse-
reduces the number of individual gate control signals and blocking (SRB) behavior and a quasi-ohmic conduction
the overall complexity, as the commutation sequences characteristic [22]. The resulting ac–ac CSC VSD topology
can be simplified (no four-step commutations necessary, is shown in Figure 11(c) and features the same number of
see below). However, a dedicated series diode needs to gate control signals as its dual, the ac–ac voltage-source
support the full voltage and hence shows high conduc- converter (VSC) shown in Figure 12(a), but again ben-
tion losses. Instead, the advantageous ohmic conduc- efits from the lower number of main magnetic compo-
tion characteristic of the MBDS could be retained by nents which are advantageously shared between the two
controlling one of the MBDSs two gates locally to mimic converter stages. Note that higher performance (i.e., no
the diode behavior (synchronous rectification), which conduction loss contribution from a low-voltage Schottky
requires a gate drive with corresponding sensing capa- diode, small as it may be) can be achieved by accepting the
bilities [23]. Alternatively, a cascode arrangement of a higher complexity resulting from directly using dual-gate

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FIG 12 Core stages of ac–ac VSDs (the full grid-side EMI filters are not shown). (a) Voltage-source converter (VSC) with first-stage
input and output common-mode (CM) and differential-mode (DM) filters, and boost–buck functionality. (b) Current-source converter
(CSC) with MBDSs, integrated first-stage CM and DM filters, and buck–boost functionality. Note that a CSC commutation cell com-
prises three MBDSs and that the main magnetic components are shared between the converter stages.

FIG 13 VSDs based on ac–ac matrix converters. (a) Indirect matrix converter (IMC) [24], i.e., a back-to-back configuration of a cur-
rent-source rectifier (CSR) and a voltage-source inverter (VSI) without intermediate energy storage elements. (b) Direct matrix con-
verter (DMC) [2], [3] obtained from merging the IMC’s two stages, achieving ac–ac conversion with the minimum of only nine BDSs.
(c) and (d) show current-direction-dependent four-step commutation sequences [25] for DMCs [and also for CSC commutation cells,
see Figure 12(b)] using dual-gate MBDSs; the second row shows the functional equivalent circuit for each step. Note that safe com-
mutations are achieved regardless of the applied voltage polarity.

MBDSs as shown in Figure 12(b). In the future, however, i.e., a back-to-back arrangement of a CSR and a VSI, fea-
this perceived complexity increase might become irrel- turing a voltage dc-link with strictly positive voltage but
evant with further integration of MBDSs, gate drives, and without an energy storage capacitor. The two converter
possibly sensing electronics and commutation logic into stages can be integrated, resulting in the direct matrix
intelligent CSR/CSI commutation cell modules. converter (DMC) [2], [3] that realizes ac–ac conversion
As the instantaneous power flow of (symmetric) three- with a minimum of only nine BDSs, as shown in Fig-
phase systems is constant, it is in principle not necessary ure 13(b). Both topologies, IMC and DMC, are limited to
to provide an energy buffer (capacitor, inductor) in the buck operation; specifically, the maximum motor voltage
dc-link of an ac–ac VSD. Omitting this energy storage ele- Vm is limited to Vm ≤ √3/2 ∙Vg ≈ 0.86 Vg, where Vg is the grid
ment is the key idea of matrix converters such as the indi- voltage. Note further that the DMC [and, for that matter,
rect matrix converter (IMC) [24] shown in Figure 13(a), also the commutation cells of CSCs, see Figure 12(b)]

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 require multi-step commutation sequences to ensure that
there is always a path for the inductor current while never
short-circuiting any of the capacitors. Typically, four-step
commutation sequences that depend on the current direc-
tion [Figure 13(c) and (d)] [25] or on the voltage polarity
[26] are employed; but also variants with fewer steps
have been described. Clearly, the availability of MBDSs
renders the DMC topology a highly attractive realization
option for ac–ac VSDs due to the minimal switch count.
FIG 14 Key components of an ac solid-state circuit breaker
Thus, for example, a GaN MBDS-based DMC achieving
(SSCB) realized with an MBDS and comparison of the reaction
times between an SSCB and a conventional mechanical circuit extreme compactness by massive on-chip/in-PCB integra-
breaker, see also [29]. tion has been demonstrated in [27], and [28] describes a

Monolithic Bidirectional Switch Concepts

It is beyond the scope of this article to provide a comprehensive

history of the MBDS development. Thus, suffice to say that
early activities regarding MBDS semiconductor realizations can
be traced back to the turn of the millennium, where not only
reverse-blocking IGBTs (RB-IGBTs) [33] have been demonstrated,
but also early MBDS concepts [34]. A few years later, various
companies started to investigate MBDSs based on GaN HEMTs
featuring two individual gates and especially a shared drain
region that is used for blocking either voltage polarity [35], [36],
[37], [38]. Thus, GaN MBDSs can be considered the most mature
MBDS technology, with ±600 V, 140 mΩ samples being available
[7], [38]. Figure 15(a) shows a schematic device cross section
of such a normally-off dual-gate GaN MBDS (gate-injection
transistor, GIT); alternative realizations feature normally-on gates
or cascode configurations with LV MOSFETs connected in series
with either source terminal [39].
SiC-based MBDSs have been demonstrated recently, too,
which would allow for increased blocking voltages above
the ±650 V typically achieved with GaN-based lateral device
concepts. Figure 15(b) shows a BiDFET [40], a monolithic (in
the sense of on-chip) arrangement of two SiC transistors FIG 15 Conceptual (more details are given in the references)
with integrated JBS diodes. Whereas the BiDFET provides a device cross sections of various MBDSs. (a) Monolithic bidirec-
blocking voltage of ±1200 V, it is essentially a common-drain tional dual-gate GaN HEMT [35], [36], [37], [38] with a single
drift region for both blocking voltage polarities, and test board
arrangement of two transistors and hence there are two drift
with a CSC commutation cell [see Figure 12(b)] realized with
regions, one for supporting each blocking voltage polarity. first-generation ±600 V, 140 mΩ samples [38]. (b) SiC BiDFET [40]
Thus, whereas there are benefits from the on-chip inverse- and (c) similar vertical back-to-back connection of two SiC MOS-
series connection, e.g., regarding handling and packaging, FETs [41]. (d) Monolithic bidirectional 4H-SiC IGBT with a single
the factor-of-four penalty in chip area usage [see Figure 2(g)] drift region [42] and (e) B-TRAN [43], a monolithic bidirectional
Si bipolar junction transistor, also with a single drift region.
still applies. The same is true for a vertical back-to-back
configuration of two MOSFET dies with a metal interposer layer
in-between [41], see Figure 15(c). This is in contrast to the true
monolithic bidirectional 4H-SiC IGBT device [42] shown in Figure 15(d), where the shared drain region is clearly visible; initial prototype devices
achieved measured blocking voltages of up to ±7 kV. Such vertical SiC MBDS concepts, however, require non-standard double-sided lithography
processes and are more challenging to cool as both sides of the wafer feature intricate structures (gates, etc.). Finally, Figure 15(e) shows a recently
demonstrated true monolithic bidirectional Si bipolar junction transistor (BJT) with a shared collector region (B-TRAN) [43]. The devices achieve a
blocking voltage of ±1200 V and support pulsed currents of up to ±100 A, but, being BJTs with a typical current gain of three to four, require
relatively complex gate drive circuitry providing the corresponding base currents.

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2-kW ac–ac DMC operating from a 200 V grid using early
discrete dual-gate GaN MBDSs.

Solid-State Circuit Breakers

Finally, MBDSs might also find use in future ac solid-state
circuit breakers (SSCBs) [29]. As Figure 14 shows, SSCBs
comprise in addition to the power semiconductor itself
(which requires BDS capability, at least in ac applications)
also an overvoltage protection element, current sensing
and control electronics, and possibly an external communi-
cation interface that facilitates integration in smart grid
FIG 16 Technology S-curves of power electronics development
environments or advanced remote configuration options cycles, typically triggered by new power semiconductor tech-
such as dynamic adaption of trip levels or utilization as a nologies. Replacement/disruptive technologies improve perfor-
remote-controlled load switch. Given today’s sensing and mance not only by a few percentage points but by factors (i.e.,
processing capabilities, SSCBs can react significantly X-Technologies and X-Concepts [49] by a factor X).
quicker than conventional mechanical circuit breakers,
which implies that the switched fault current is limited to semiconductor technology (see also [45]); most recently
relatively low values even if the system’s prospective short- by the transition to wide-bandgap (WBG) devices. It can
circuit current is high. On the other hand, during regular be expected that MBDSs, especially once higher blocking
operation the load current flows through the power semi- voltages are achieved either by improved GaN technology
conductors and generates conduction losses. Thus, MBDSs (e.g., 1200 V using sapphire substrates [46]) or mature SiC
with an inherently better per-chip-area on-state resistance MBDSs, are, together with superjunction SiC devices [47],
compared to discrete realizations [see Figure 2(g) and (h)] and ultra-WBG materials (like diamond) [48], amongst
are thus attractive for future SSCBs [30], [31], [32]. the X-Technologies [49] shaping the ongoing disruptive
transition to Power Electronics 4.0. In addition, a further
Conclusion key technology will be the integration (functional and
Power electronics is a key enabling technology for solu- physical) of power switches (e.g., MBDSs) and surround-
tions to the 21st century’s major challenges such as the ing circuitry (gate drives, sensing, commutation logic),
climate crisis. As outlined in this article, there are many aiming at masking complexity (such as four-step com-
converter topologies (e.g., Vienna rectifiers, current- mutation sequences) from the application. Also, on the
source or matrix converters, etc.) for key application physical level and following trends from microprocessor
areas like grid interfaces and motor drives, which require technology [50], concepts for monolithic 3D-integration
switches with bidirectional voltage blocking and bidirec- [27] of power, information, and cooling systems will be
tional current conduction capability, i.e., bidirectional necessary to achieve highest performance using a mini-
switches (BDSs). These topologies will hence benefit mum of space and resources.
from the availability of dual-gate single-drift-region
MBDSs, which can overcome the factor-of-four penalty in About the Authors
chip area usage of conventional discrete realizations. With Jonas Huber ([email protected]) (Senior Member,
MBDSs removing this structural drawback, these con- IEEE) is a Senior Researcher at the Power Electronic
verter topologies become regular members of the family Systems Laboratory, ETH Zurich, Switzerland. His
and their suitability for many applications must be reeval- research interests comprise all types of WBG-semicon-
uated. In addition, the emergence of MBDSs inspires the ductor-based ultra-compact, ultra-efficient, or highly
derivation of new topologies, e.g., [44]. dynamic converter systems.
GaN MBDSs are already quite mature and approach
commercial availability, but as of now are limited to Johann W. Kolar ([email protected]) (Fellow, IEEE) is
blocking voltages of up to ±650 V. Whereas this is suffi- an International Member of the U.S. National Academy of
cient for three-level Vienna rectifiers or T-type converters Engineering and a Full Professor and the Head of the Power
connected to the 400 V mains, it is not for current-source Electronic Systems Laboratory at the Swiss Federal Insti-
or matrix converters. SiC MBDSs that would allow higher tute of Technology (ETH) Zurich. The focus of his current
blocking voltages are considered in research, but the research is on ultra-compact/efficient WBG PFC rectifier
vertical device structures come with challenges such as and inverter systems, ultra-high bandwidth switch-mode
non-standard two-sided wafer processing and a more power amplifiers, multi-port converters, solid-state trans-
complicated interface to cooling systems. formers, multi-functional actuators, ultra-high speed/motor-
Looking at the technology S-curves of power electron- integrated drives, bearingless motors, ANN-based multi-
ics development cycles shown in Figure 16, it becomes objective design optimization, and life cycle analysis of
clear that each cycle has been driven by a new power power electronics converter systems.

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