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CMOS Inverter Simulation Report

This report details the design and simulation of a CMOS inverter using NMOS and PMOS transistors, focusing on its operation, Voltage Transfer Characteristic, and key performance metrics such as noise margins and power consumption. Simulations were conducted using LTspice, demonstrating the inverter's switching behavior and validating its functionality. Future work includes analyzing load capacitance effects and simulating with advanced models and scaled technologies.

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0% found this document useful (0 votes)
16 views3 pages

CMOS Inverter Simulation Report

This report details the design and simulation of a CMOS inverter using NMOS and PMOS transistors, focusing on its operation, Voltage Transfer Characteristic, and key performance metrics such as noise margins and power consumption. Simulations were conducted using LTspice, demonstrating the inverter's switching behavior and validating its functionality. Future work includes analyzing load capacitance effects and simulating with advanced models and scaled technologies.

Uploaded by

internpe138
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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CMOS Inverter Design and Simulation Report

1. Introduction

This report presents the design and simulation of a CMOS inverter using NMOS and PMOS transistors. The

goals are:

- To understand its operation and Voltage Transfer Characteristic (VTC).

- To analyze noise margins, propagation delay, and power consumption.

- To use simulation tools like LTspice, Ngspice, or Cadence Virtuoso for accurate analysis.

2. CMOS Inverter Overview

Schematic Description:

- PMOS: Source to VDD, Gate = Input, Drain = Output

- NMOS: Source = GND, Gate = Input, Drain = Output

The inverter output is taken from the node connecting both drains.

3. Simulation Tool: LTspice

Tool Setup:

- Download from Analog Devices website.

- Create schematic, add NMOS/PMOS models.

- Run DC and transient simulations.

4. Schematic Implementation in LTspice

Example SPICE models:

.model NMOS NMOS (LEVEL=1 VTO=0.7 KP=120u LAMBDA=0.01)

.model PMOS PMOS (LEVEL=1 VTO=-0.7 KP=40u LAMBDA=0.01)

Circuit Setup:

VDD Vdd 0 DC 5

Vin in 0 DC 0
CMOS Inverter Design and Simulation Report

M1 out in Vdd Vdd PMOS L=1u W=5u

M2 out in 0 0 NMOS L=1u W=1u

5. DC Analysis - VTC Curve

Simulation Setup:

.dc Vin 0 5 0.01

.plot DC V(in) V(out)

Expected Result:

- VTC curve shows inverter switching behavior.

6. Transient Analysis - Pulse Input

Input Pulse:

Vin in 0 PULSE(0 5 0 1n 1n 10n 20n)

.tran 0.1n 100n

.plot TRAN V(in) V(out)

Expected Output:

- Output inverts input with observable delay.

7. Key Parameters

A. Noise Margins:

NML = VIL - VOL, NMH = VOH - VIH

B. Propagation Delay:

Measure tPHL and tPLH from transient curve.

C. Power Consumption:
CMOS Inverter Design and Simulation Report

I(VDD) * VDD gives instantaneous power. Integrate over time for average.

8. Results Summary

Parameter | Value (Example)

----------------------|----------------

VDD | 5V

VIL, VIH | ~1.5V, ~3.5V

NML, NMH | ~1.5V each

Propagation Delay | ~2-5 ns

Power Consumption | ~10 µW - 1 mW

9. Conclusion

The CMOS inverter demonstrates ideal switching behavior with high noise margins and low static power

consumption. Simulation validates correct functionality.

10. Future Work

- Analyze load capacitance effects

- Use advanced BSIM models

- Simulate using scaled technologies (e.g., 65nm, 180nm)

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