Draw the symbol of an NPN transistor and label its

three terminals.
• The NPN transistor is made of semiconductor materials like silicon or
germanium. When a p-type semiconductor material is fused
between two n-type semiconductor materials, an NPN transistor is
formed.

• The NPN transistor features three terminals: emitter, base and

collector. This transistor features two diodes that are connected back
to back. The diode seen between the emitter-base terminal is
referred to as the emitter-base diode. The diode between collector
and base terminal is known as collector-base diodes. The emitter is
moderately doped, the base is lightly doped, and the collector is co

1. What is the full form of SOP & POS?

 o SOP (Sum of Products):
SOP is a standard form of Boolean expression where multiple product terms
(AND operations) are summed together (OR operation). For example:
A⋅B+C⋅DA \cdot B + C \cdot DA⋅B+C⋅D
Here, A⋅BA \cdot BA⋅B and C⋅DC \cdot DC⋅D are product terms and the "+"
sign indicates the sum (OR).
o POS (Product of Sums):
POS is another standard form of Boolean expression where multiple sum
terms (OR operations) are multiplied together (AND operation). For example:
(A+B)⋅(C+D)(A + B) \cdot (C + D)(A+B)⋅(C+D)
Here, A+BA + BA+B and C+DC + DC+D are sum terms, and the "·" indicates the
product (AND).
2. Define the term "active region" of a BJT.
The active region of a Bipolar Junction Transistor (BJT) is the operating region where the
transistor is used for amplification. In this region:
o The base-emitter junction is forward biased (positive voltage on base
relative to emitter), which allows current to flow from base to emitter.
o The collector-base junction is reverse biased (positive voltage on the
collector relative to base), which controls the current flow from collector to
emitter.
o The transistor operates as an amplifier, where small variations in the base
current control large variations in the collector current.
In an NPN transistor, this means:
o The emitter is at a lower potential, the base is at a higher potential, and the
collector is at an even higher potential.
3. Define minterm and maxterm with example.
o Minterm: A minterm is a product (AND operation) of all variables in a
Boolean function, where each variable is complemented or not in such a way
that it represents a unique combination of the inputs.
Example: For a two-variable Boolean function with variables A and B, the
minterm for the condition A=1 and B=0 is A⋅B
1. Maxterm: A maxterm is a sum (OR operation) of all variables in a Boolean function,
where each variable is complemented or not such that the sum represents a unique
combination of inputs.
Example: For the same two-variable Boolean function, the maxterm for the condition
when A = 1 and B = 0 is A + B
 2. Write down the different operating regions of a transistor.
A transistor (BJT) operates in the following regions based on the biasing of the junctions:
o Cut-off Region: Both the base-emitter and base-collector junctions are
reverse biased. The transistor is "off" and no current flows through it. The
collector current is approximately zero.
o Active Region: The base-emitter junction is forward biased, and the base-
collector junction is reverse biased. This is the region used for amplification,
where the current flowing from the collector to the emitter is controlled by
the base current.
o Saturation Region: Both the base-emitter and base-collector junctions are
forward biased. The transistor is "on," and it conducts maximum current from
collector to emitter. This is where the transistor acts as a switch, with very
little voltage drop across the collector-emitter junction.
o Breakdown Region: The base-emitter junction is forward biased, but the
base-collector junction is reverse biased with a high reverse voltage. If the
reverse voltage is high enough, the transistor may break down, causing
excessive current flow and potential damage.
3. Write down the different BJT configurations.
A Bipolar Junction Transistor (BJT) can be configured in three ways based on the positioning
of the emitter, base, and collector terminals. These are:
o Common Emitter (CE) Configuration:
▪ In this configuration, the emitter is common to both the input and
output circuits.
▪ It is the most widely used configuration for amplification, offering
both voltage and current gain.
▪ The output is inverted relative to the input.

o Common Base (CB) Configuration:

▪ The base is common to both the input and output circuits.
▪ It offers high voltage gain but no current gain.
o The output is not inverted relative to the input.

o
o Common Collector (CC) Configuration (also known as Emitter Follower):
▪ The collector is common to both the input and output circuits.
▪ This configuration offers high current gain but no voltage gain.
▪ The output is in phase with the input. It is typically used for
Define Universal Gates. Draw the logic symbol, Expression and truth table of
Universal gates?
The universal gates are the logic gates that are versatile in that they can be programmed to
execute any Boolean function. The most popular types among them are NAND and NOR
gates.

Derive the relationship between the Base current and the emitter current in a BJT.
The relationship between the base current and the emitter current in a bipolar junction
transistor (BJT) is that the emitter current is equal to the sum of the base current and the
collector current:
The equation for this relationship is IE = IB + IC.
State differences between FET and BJT.
 CE CB

Define Universal Gates. Implement AND, OR, NOR by using NAND gates only.
The universal gates are the logic gates that are versatile in that they can be programmed to
execute any Boolean function. The most popular types among them are NAND and NOR
gates.

Explain working principle of Depletion type MOSFET (n-channel). Draw &explain its
The N-Channel MOSFET Is a type of MOSFET. In the N channel MOSFET, the channel is
composed of the majority of the electrons as current carriers. When the MOSFET is
activated, the majority of current flows due to electrons moving through the channel

Working - The circuit diagram of enhancement type n channel

MOSFET is shown in the figure , in which a positive voltage is
applied around the gate terminal, when the applied voltage around
gate to source terminal is zero (VGS = 0), then no current will flow
due to absence of channel. The main working principle of the NMOS
is to control the current flow and voltage flow between the source and drain terminals
Draw the circuit of NPN transistor in common base configuration and discuss its working.
Draw input-output characteristic

Electrons injected from

the emitter into the base diffuse into the collector-base depletion region due to the thin
base region. When the electrons enter the collector-base depletion regions, they are
pushed into the collector region by the electric field at the collector-base depletion region