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This technical data sheet provides specifications for low power PNP silicon transistors 2N1131, 2N1132, and their variants, qualified per MIL-PRF-19500/177. It includes absolute maximum ratings, electrical characteristics, dynamic characteristics, and package dimensions. The document also outlines testing conditions and parameters for performance metrics such as current transfer ratios and breakdown voltages.
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0% found this document useful (0 votes)
16 views3 pages

Captura de Pantalla 2025-03-10 A La(s) 11.07.38 P.M.

This technical data sheet provides specifications for low power PNP silicon transistors 2N1131, 2N1132, and their variants, qualified per MIL-PRF-19500/177. It includes absolute maximum ratings, electrical characteristics, dynamic characteristics, and package dimensions. The document also outlines testing conditions and parameters for performance metrics such as current transfer ratios and breakdown voltages.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com

LOW POWER PNP SILICONTRANSISTOR


Qualified per MIL-PRF-19500/177

DEVICES LEVELS
2N1131 2N1132 JAN
2N1131L 2N1132L JANTX
JANTXV

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions Symbol Value Unit


Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 50 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 600 mAdc
(1)
Total Power Dissipation @ TA = +25°C 0.6
PT W
@ TC = +25°C (2) 2.0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C TO-39
2N1131, 2N1132
NOTES:
1/ Derate linearly 3.43mW/°C for TA > +25°C
2/ Derate linearly 11.4mW/°C for TC > +25°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit


OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc V(BR)CEO 40 Vdc

Collector- Base Breakdown Voltage TO-5


IC = 10µAdc V(BR)CBO Vdc 2N1131L, 2N1132L
50
Emitter-Base Cutoff Current
VEB = 5.0Vdc IEBO 100 µAdc

Collector-Emitter Cutoff Current


VCE = 50Vdc, RBE ≤ 10 ohms ICER 10 mAdc

Collector-Base Cutoff Current


VCB = 50Vdc ICBO 10 µAdc
VCB = 30Vdc 1.0

T4-LDS-0187 Rev. 1 (101882) Page 1 of 3


TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)

Parameters / Test Conditions Symbol Min. Max. Unit


ON CHARACTERTICS (3)
Forward-Current Transfer Ratio
IC = 150mAdc, VCE = 10Vdc 2N1131, L 20 45
2N1132, L hFE 30 90
IC = 5.0mAdc, VCE = 10Vdc 2N1131, L 15
2N1132, L 25
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc VCE(sat) 1.3 Vdc

Base-Emitter Saturation Voltage


IC = 150mAdc, IB = 15mAdc VBE(sat) 1.5 Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit


Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N1131, L 15 50
2N1132, L 30 90
hfe
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N1131, L 20
2N1132, L 30
Small-Signal Open-Circuit Output Admittance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hob 1.0 µmho
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz 5.0
Small-Signal Short-Circuit Input Impedance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 25 35 Ω
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz hib 10
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
|hfe|
IC = 50mAdc, VCE = 10Vdc, f = 20MHz 2N1131, L 2.5 20
2N1132, L 3.0 20
Output Capacitance
Cobo pF
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz 4.5
Iutput Capacitance
Cibo pF
VEB = 0.5Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz 80

SWITCHING CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit


Turn-On Time + Turn-Off Time t
on + toff 50 ηs
(See figure 2 of MIL-PRF-177)

(3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%

T4-LDS-0187 Rev. 1 (101882) Page 2 of 3


TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com

PACKAGE DIMENSIONS

Dimensions
Symbol Inches Millimeters Note
Min Max Min Max
CD .305 .335 7.75 8.51
CH .240 .260 6.10 6.60
HD .335 .370 8.51 9.40
LC .200 TP 5.08 TP 6
LD .016 .021 0.41 0.53 7, 8
LL .500 .750 12.70 19.05 7, 8, 12
LU .016 .019 0.41 0.48 7, 8
L1 .050 1.27 7, 8
L2 .250 6.35 7, 8
P .100 2.54
Q .050 1.27 5
TL .029 .045 0.74 1.14 4
TW .028 .034 0.71 0.86 3
r .010 0.25 10
α 45° TP 45° TP 6

NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. * For L-suffix or non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm)
max. For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max..

* FIGURE 1. Physical dimensions 2N1131 and 2N1132 ( TO-39), 2N1131L and 2N1132L (TO-5).

T4-LDS-0187 Rev. 1 (101882) Page 3 of 3

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