TPC8A03-H

TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H)

TPC8A03-H
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
Built-in schottky barrier diode Low forward voltage: VDSF = 0.6 V (max) High-speed switching Small gate charge: QSW = 8.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.1 m (typ.) High forward transfer admittance: |Yfs| = 54 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm

Absolute Maximum Ratings (Ta = 25C)

Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 20 17 68 1.9 1.0 188 17 0.108 150 55 to 150 W W mJ A mJ C C
1 2 3 4

Unit V V V A

JEDEC JEITA TOSHIBA

2-6J1B

Pulsed (Note 1) Drain power dissipation Drain power dissipation (t = 10 s) (Note 2a) (t = 10 s) (Note 2b)

Weight: 0.085g (typ.)

Circuit Configuration
8 7 6 5

Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care.

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Thermal Characteristics
Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit C/W C/W

Marking (Note 5)

TPC8A03 H

Part No. (or abbreviation code) Lot No. Note 6

Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 25.4 25.4 0.8 (Unit: mm)

FR-4 25.4 25.4 0.8 (Unit: mm)

(a)

(b)

Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 17 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Note 6: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

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Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (Miller) charge Gate switch charge tf toff Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss rg tr VGS ton 10 V 0V 4.7 VDS = 10 V, VGS = 0 V, f = 5 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 20 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = 20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 8.5 A VGS = 10 V, ID = 8.5 A VDS = 10 V, ID = 8.5 A Min 30 15 1.3 27 ID = 8.5 A VOUT RL = 1.76 VDD 24 V, VGS = 10 V, ID = 17 A Typ. 5.1 4.1 54 2640 100 610 1.0 3.6 11.0 7.2 42 36 19 7.6 5.0 8.4 Max 100 100 2.3 7.0 m 5.6 3430 150 1.5 ns nC pF S V V Unit nA A

VDD 15 V Duty 1%, tw = 10 s VDD 24 V, VGS = 10 V, ID = 17 A VDD 24 V, VGS = 5 V, ID = 17 A

Qg Qgs1 Qgd QSW

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristic Peak forward current Forward voltage (diode) Pulse (Note 1) Symbol IFP VDSF Test Condition IDR = 1 A, VGS = 0 V IDR = 17 A, VGS = 0 V Min Typ. 0.4 Max 68 0.6 1.2 Unit A V V

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5 4.5 20 8 10 16 4

ID VDS
3.0 Common source Ta = 25C Pulse test 2.9

10 8 5 4.5 50 4

ID VDS
3.2 3.1 Common source Ta = 25C Pulse test 3.0

40

(A)

ID

12 2.8

ID Drain current

(A)
30

Drain current

8 2.7

20

2.9

2.8 10

4 VGS = 2.5 V

VGS = 2.6 V 0 0 0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5

Drain-source voltage

VDS

(V)

Drain-source voltage

VDS

(V)

ID VGS
30 Common source VDS = 10 V Pulse test 0.20

VDS VGS
Common source Ta = 25C Pulse test 0.15

(A)

24

ID

Drain-source voltage

18

Drain current

VDS
100 12 Ta = 55C

(V)
0.10

ID = 17 A

25 6

0.05

8.5 4.3

0 0 1 2 3 4 5

0 0

10

Gate-source voltage

VGS

(V)

Gate-source voltage

VGS

(V)

Yfs ID
1000 10 Common source VDS = 10 V Pulse test 100 Ta = 55C

RDS (ON) ID

(S)

Drain-source ON-resistance RDS (ON) (m)

|Yfs|

4.5

Forward transfer admittance

100 10

25

VGS = 10 V

Common source Ta = 25C Pulse test

0.1 0.1

10

100

1 0.1

10

100

Drain current

ID

(A)

Drain current

ID

(A)

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RDS (ON) Ta
12 Common source Pulse test 9 ID = 4.3 A,8.5 A,17 A 100 4.5

IDR VDS (A)

Drain-source ON-resistance RDS (ON) (m)

10 3

Drain reverse current

IDR

1 10 VGS = 0 V

6 VGS = 4.5 V 3 VGS = 10 V 0 80 ID = 4.3 A,8.5 A,17 A

Common source Ta = 25C Pulse test 1 0 0.2 0.4 0.6 0.8 1.0

40

40

80

120

160

Ambient temperature

Ta

(C)

Drain-source voltage

VDS

(V)

Capacitance VDS
10000 2.5

Vth Ta Vth (V) Gate threshold voltage

Ciss

(pF)

2.0

1000 Coss

1.5

Capacitance

1.0

100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10

Crss

0.5

100

0 80

Common source VDS = 10 V ID = 1 mA Pulse test 40 0 40 80 120 160

Drain-source voltage

VDS

(V)

Ambient temperature

Ta

(C)

PD Ta
2.0

Dynamic input/output characteristics

50 Common source ID = 17 A Ta = 25C Pulse test 20

(V)

40

16

PD

VDS

1.5

Drain power dissipation

Drain-source voltage

(2) 1.0

VDS 20

VDD = 6 V 12V 24V 8

0.5

10

0 0

40

80

120

160

0 0

10

20

30

40

0 50

Ambient temperature

Ta

(C)

Total gate charge

Qg

(nC)

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Gate-source voltage

30

12

VGS

(V)

(1)

(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s

(W)

TPC8A03-H

rth tw
1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2)

Transient thermal impedance rth (C/W)

100 (1)

10

0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse width

tw

(s)

Safe operating area

1000

(A)

100

ID max (Pulse) * t =1 ms *

Drain current

ID

10

10 ms *

*Single-pulse Ta = 25C Curves must be derated linearly with increase in temperature.

0.1 0.1

VDSS max 10 100

Drain-source voltage

VDS

(V)

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IDR VDSF
100 100000

IDSS Tch
Pulse test

(typ.)

(A)

(A)

Pulse test VGS = 0 V

VGS = 0 V 20 10000 VDS = 30 V

10

IDR

IDSS

Drain reverse current

100 10 75

Drain cutoff current

1000

Ta = 25C

100

1 0

0.2

0.4

0.6

0.8

10 0

40

80

120

160

Drain-source voltage

VDSF

(V)

Channel temperature

Tch

(C)

Tch VDS
160

(C)

140 120 100 80 60 40 20 0 0

Pulse test VGS = 0 V

Channel temperature

Tch

10

20

30

40

Drain-source voltage

VDS

(V)

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RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively TOSHIBA), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively Product) without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBAs written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIBA works continually to improve Products quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS PRODUCT DESIGN OR APPLICATIONS. Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (Unintended Use). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.

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