BJT

Bipolar Junction Transistors

 BJT transistor: (a) PNP schematic symbol, (b) construction (c) NPN schematic symbol,
(d) construction

NPN – Collector is N-type, Base is P-type, Emitter is N-type

There are two junctions: the emitter junction (BE) and collector
junction (CB) respectively. Now initially it is sufficient for us to know that
BE junction is forward-biased(VBE = 0.7V) and CB junction is reverse-
biased (VBC = -Volts).
 1907 - The Problem In 1906, the eccentric American inventor Lee De Forest
developed a triode in a vacuum tube. It was a device
that could amplify signals, including, it was hoped,
signals on telephone lines as they were transferred
across the country from one switch box to another.
AT&T bought De Forest's patent and vastly improved
the tube. It allowed the signal to be amplified regularly
along the line, meaning that a telephone conversation
could go on across any distance as long as there were
amplifiers along the way.

But the vacuum tubes that made that amplification possible were
extremely unreliable, used too much power and produced too
much heat. In the 1930s, Bell Lab's director of research, Mervin Kelly,
recognized that a better device was needed for the telephone
business to continue to grow. He felt that the answer might lie in a
strange class of materials called semiconductors.
1945 - The Solution

Three persons, Walter Brattain, John Bardeen and William Shockley, shared the Nobel
Prize in Physics for the breakthrough that they achieved on December 23, 1947.

On December 23, 1947, it was on the afternoon of this day that Walter H. Brattain
and John Bardeen demonstrated the amplifying action of the first transistor (point-
contact transistor) at the Bell Telephone Laboratories.
The advantages of this three-terminal solid-state device over the tube were
immediately obvious:
➢ It was smaller, and lightweight;
➢ had no heater requirement or heater loss;
➢ had rugged construction;
➢ and was more efficient since less power was absorbed by the device itself;
➢ it was instantly available for use, requiring no warm-up period;
➢ and lower operating voltages were possible.
1947:

In the beginning, there was the point-contact transistor. This was the
very first transistor ever made, built by Walter Brattain with the help of
John Bardeen. It was made of two gold foil contacts sitting on a
germanium crystal. Current coming in one contact would cause the
germanium crystal to boost the strength of the current flowing through
the other contact.

1951:
The first big change in transistors occurred when William Shockley developed a
junction transistor. The first junction transistors were sandwiches of N- and P-
type germanium (germanium with an excess and scarcity of electrons,
respectively). A weak voltage coming into the middle layer would affect another
current traveling across the entire sandwich.
1958:
Germanium transistors broke down at high temperatures, so
they were eventually replaced by silicon transistors. Gordon
Teal built the first silicon transistor, which worked just like a
germanium junction transistor.
Transistor Technology Timeline
Year Technology Organization

1947 Point contact Bell Labs

1948 Grown junction Bell Labs
1951 Alloy junction General Electric
1953 Surface barrier Philco
1953 JFET Bell Labs
1954 Diffused base Bell Labs
1954 Mesa Bell Labs
1959 Planar Fairchild
1959 MOSFET Bell Labs
 First and original transistor (a point-contact transistor)

Transistor – a combination of
transfer and resistor.

This is because it transfers

resistance from one end of the
device to the other end.
 THINGS TO KNOW ABOUT BJT’S
➢ A Bipolar Junction Transistor (also known as a BJT or BJT Transistor) is a
three-terminal semiconductor device consisting of two p-n junctions which
are able to amplify or magnify a signal.
➢ The three terminals of the BJT are the base (B), the collector (C) and the
emitter (E) which results to three currents; IE (mA)= IC (mA)+ IB (μA)
➢ There are two types of bipolar junction transistors – NPN transistors and
PNP transistors.
➢ A BJT is a type of transistor that uses both electrons and holes as charge
carriers, hence the term bipolar.
➢ It is a current-controlled device.
➢ A signal of small amplitude if applied to the base (input) is available in the
amplified form at the collector (output) of the transistor. This is the
amplification provided by the BJT.
➢ Note that it does require an external source of DC power supply to carry
out the amplification process.
In order for a transistor to properly function as a current regulator, the
controlling (base) current and the controlled (collector) currents must
be going in the proper directions: meshing additively at the emitter
and going in the direction of the emitter arrow symbol.

IC Note:
IE
IB IE follows the direction
of arrow in the emitter,
IB
IE then
IC
IE (mA)= IC (mA)+ IB (μA)
➢ Every BJT has a transistor beta (β). β = IC / IB → Eq. 1
The ratio between collector current and base current is called
“Beta” (β) or “hfe”. β are different for every transistor, and β
changes for different operating conditions (temperature,
frequency among other factors). Ex. A transistor with hfe or β = 50
may test with Ic/IB ratios as low as 30 and as high as 100.

IE (mA)= IC (mA)+ IB (μA)

IE = IC + IB → Eq. 2
IE = βIB + IB = IB (β + 1) --Eq. 3
IE (mA) = IC (mA) only for approximations purposes
The ratio between collector current and emitter current is called
“alpha” (α), the value is always less than 1.
α = IC / IE → Eq. 4
(Pls see to next page for
α = β / (β + 1) → Eq. 5 Derivation of Eqs. 5 and 6)
β = α / (1- α) → Eq. 6

Sample Problems:
1. Which of the transistor currents is always the largest? Which is always the smallest?
Which two currents are relatively close in magnitude?
2. If the emitter current of a transistor is 3.2mA and the base current is 22.35µA,
determine the levels of IC , β and α.
➢ BJT has three (3) regions of operation : cut-off, active and
saturation.
When a transistor has zero current through it, it is said to be in a state of
cutoff (fully nonconducting/off).
When a transistor has maximum current through it, it is said to be in a
state of saturation (fully conducting/on).
A transistor is said to be in its active mode if it is operating somewhere
between fully on (saturated) and fully off (cutoff).When used as
amplifiers, the transistor operates in this region.
Operation in the cutoff, saturation, and linear regions of the BJT characteristic are provided
as follows:
1. Linear-region operation: Base–emitter junction forward biased Base–collector junction
reverse biased
2. Cutoff-region operation: Base–emitter junction reverse biased
3. Saturation-region operation: Base–emitter junction forward biased Base–collector
junction forward biased
TRANSISTOR CONSTRUCTION

The transistor is a three-layer semiconductor

device consisting of either two n- and one p-type
layers of material (NPN ) or two p- and one n-type
layers of material (PNP).

Both are shown in Fig. 3.2 with the proper dc

biasing. The dc biasing is necessary to establish
the proper region of operation for ac
amplification.

➢ The emitter layer is heavily doped, the base

lightly doped, and the collector intermediate
level.
➢ The outer layers have widths much greater
than the sandwiched P- or N type material.
➢ For the transistors, the ratio of
the total width to that of the
center layer is 0.150/0.001
150:1.
➢ The doping of the sandwiched
layer is also considerably less
than that of the outer layers
(typically, 101 or less). This lower
doping level decreases the
conductivity (increases the
resistance) of this material by
limiting the number of “free”
carrier
➢ The terminals have been indicated
by the capital letters E for emitter,
C for collector, and B for base.
➢ The abbreviation BJT, from bipolar
junction transistor, is often
applied to this three-terminal
device.
➢ The term bipolar reflects the fact
that holes and electrons
participate in the injection process
into the oppositely polarized
material.
TRANSISTOR OPERATION

The operation of the NPN transistor is exactly the same if the roles played
by the electron and hole are interchanged. In Fig. 3.3 the PNP transistor
has been redrawn without the base-to-collector bias. Note the
similarities between this situation and that of the forward-biased diode.
The depletion region has been reduced in width due to the applied bias,
resulting in a heavy flow of majority carriers from the P- to the N-type
material.
TRANSISTOR OPERATION
Let us now remove the base-to-emitter bias of the pnp transistor.
Consider the similarities between this situation and that of the reverse-
biased diode. Recall that the flow of majority carriers is zero, resulting in
only a minority-carrier flow, as indicated in Fig. 3.4. In summary,
therefore:
One p-n junction of a transistor is reverse biased, while the other is
forward biased.
 DC Biasing
Bipolar Junction Transistors
(BJT)
Electronic Devices and Circuit Theory
by
Robert L. Boylestad and Louis Nashelsky
Amplifiers Configurations
1.Fixed-Bias
2. Emitter-Stabilized Bias or Emitter Bias
3. Voltage-Divider Bias (Approximate and Exact)
4. Collector Feedback or DC Bias with Voltage Feedback
5. Common Collector or Emitter- Follower
6. Common-Base
7. Miscellaneous Bias

Common-Emitter (CE) – the Emitter is common to both the input and

output loop, the Emitter is closest to ground.
Common -Base (CB) – “Base”
Common-Collector (CC) – “Collector”
CURRENT AND VOLTAGE NOTATION

Current Relationships IE = IC + IB
Voltage between two subscripted points - 2 letters subscript
VCE = Voltage between Collector and Emitter
VCE = VC – VE +
VBE = VB – VE = 0.7V
If the emitter (E) is directly connected to ground, then VE = 0V + VCE
VBE _
Use CAPITAL LETTERS to indicate DC level, use small letters for ac level _

Node voltage – one letter subscript, voltage between subscripted letter and ground
VC, VB and VE
Note: Capacitor = open circuit for DC analysis
Capacitor = short for ac analysis
 Fixed-Bias Amplifier

Vo

1. Replace all C by an open circuit.

2. Split Vcc to separate the input and output loops.
3. Write the proper current directions.
4. Write the correct voltage polarities.
5. Use KVL.
Remember the following facts:

1. The polarity of the voltage drop across any resistive element is

determined by the direction of the current that flows through it,
positive entering and negative exiting.

2. In using KVL, if loop enters on minus and goes out on plus,

voltage is positive. If the loop enters on positive and goes out
on negative, voltage is negative.
3. Voltage can exist without current, but current cannot exist
without voltage.

4. When directly connected to ground, voltage at that point is

zero.
FIXED BIAS

IB = (VCC-VBE) / RB
IC = βIB
IE = IC + IB
VBE = 0.7V
VE = 0V ( )
directly connected to GRD

VBE = VB – VE
VB = 0.7V
VC = Vcc - ICRC
VCE = VC - VE
Fixed- Bias

VCE + ICRC - VCC = 0 OR

-VCE –ICRC + VCC = 0

VCE = VCC - ICRC

VCE = VC - VE but VE = 0 (grd)
VCE = VC

VBC = VB - VC
 240KΩ
12V

β = 50
-Vcc + IBRB + VBE = 0
OR
Vcc - IBRB - VBE = 0
Emitter Bias Configuration
Ri
IE = 2.92mA + 29.18μA = 2.95mA
VCE = 20V – 2.92mA(2.4K) – 2.95mA(1.5K) = 8.58V
VC = 20 – 2.92mA (2.4K) = 13V VB= 5.12V
VE = IERE = 2.92mA(1.5K) = 4.38V
 IB, IC, IE, VCE, VC, VE, VB, VBE, VBC

Boardwork
Two methods of analyzing a voltage divider bias circuit
are:

Exact method – can be applied to any voltage divider

circuit

Approximate method – direct method, saves time and

energy, can be applied in most of the circuits.
 Is βRE≥ 10 R2 ?

I. APPROXIMATE METHOD (YES)

VB=VCC(R2)/R1+R2)
IB = 0 mA
IC = IE = VE / IE
VBE = VB – VE = 0.7V, VE = VB - VBE
VCE = VCC – IC RC – IERE ≈ VCC – IC ( RC +RE )
VC = VCC – IC RC
VTH = VccR2 / (R1+R2) VR2 = VccR2 / (R1+R2) = VB
VTH –IBRTH -VBE - IE RE = 0 VB= VR2 , VE = VB - 0.7V
but IE = (β+1)IB IE = VE / RE, IE = IC
VTH –IBRTH -VBE - (β+1)IB RE = 0 IB = 0
And therefore: VCE = VCC – IC (RC +RE)
IB = (VTH -VBE ) / RTH + (β+1)RE IC +
IC = βIB - VB
RTH Vc
IE = IB + IC = (β+1)IB VB + VCC +
- VE
VB = VTH – IBRTH VTH + - + - VR2 +
- VE
VCE = VCC – IC RC – IERE IB IE + -
VC = VCC – IC RC
-
VE = IE RE

EXACT APPROXIMATE
METHOD
METHOD
 YES, satisfied.
Approx is allowed!

Approximate
Method
Solution
EXACT
Method
Solution

EXACT APPROX
IC 0.85mA 0.867 mA
VCE 12.22V 12.03 V
 Is βRE≥ 10 R2 ?
120 (1.8K) ≥ 10 (3.9K)
216K ≥ 39K YES, approximate method is allowed.
I. APPROXIMATE METHOD (YES)
VR2 = VB = VCC (R2) / R1+R2) = 30V (3.9K) / (39+3.9) = 2.73V
IB = 0 mA; IC = IE
VBE = VB – VE = 0.7V
VE = VB – VBE = 2.73V-0.7V = 2.03V
IE = VE/RE = 2.03V / 1.8K = 1.13 mA
VCE = VCC – IC RC – IERE ≈ VCC – IC ( RC +RE ) = 30V – 1.13mA(2.2K+1.8K) =25.48V
VC = 30V – 1.13mA(2.2K) = 27.51V
Icsat = 30V /(2.2K+1.8K) = 7.5mA
 Is βRE≥ 10 R2 ?

2. EXACT ANALYSIS

RTH = R1 // R2, VTH=VCC(R2)/R1+R2)

IB = (VTH -VBE ) / RTH + (β+1)RE
IC = βIB IE = IC + IB
VBE = VB – VE = 0.7V
VB = (VTH –IB RTH )
VE = IERE
VCE = VCC – IC RC – IERE ≈ VCC – IC ( RC +RE )
VC = VCC – IC RC
Icsat and VCEsat

➢ Short the Collector

and Emitter terminals
➢ From
VCE = Vcc-IcRc (Fixed-Bias)
VCE = VCC-ICRC-IERE (Emitter Bias)
= VCC – IC (RC +RE )(Emitter Bias)
Collector Feedback (DC Bias with
Voltage Feedback) Configuration
Emitter Follower Configuration
Common-Base Configuration
ACTIVITY 5
BJT