BJT AC Analysis

1
 BJT Transistor Modeling
• A model is an equivalent circuit that represents the AC characteristics of the
transistor.
• A model uses circuit elements that approximate the behavior of the transistor.
• There are three models commonly used in small signal AC analysis of a
transistor:
– re model AC equivalent
circuit
– Hybrid equivalent model
– Hybrid ∏ model

AC
network Sketch an AC network:
1. Remove DC supplies
(replaced by short)
2. The coupling capacitor
and bypass capacitor
can be replaced by a2
short
 The re Transistor Model

BJTs are basically current-controlled devices, therefore the re model uses a

diode and a current source to duplicate the behavior of the transistor.

One disadvantage to this model is its sensitivity to the DC level. This model is
designed for specific circuit conditions.

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 Common-Base Configuration

26 mV
Ic  I e re 
IE

Input impedance: Low

Zi  re

Output impedance: High

Zo  

Voltage gain: voltage amplification

R R L
A V  L
 re model for CB configuration
re re

Current gain: No current amplification

A i     1

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 Common-Emitter Configuration
Input impedance: higher than CB

Zi  r e

Output impedance: lower than CB

Z o  r o  

Voltage gain:RVoltage amplification，

A V
L

re

Vo and Vi are 180° out of phas

re model for CE configuration
i   Current
CurrentAgain: r o  amplification
The diode re model can be
replaced by the resistor re.
I e    1 I b   I b

26 mV
re  re model requires you to
Ie
determine , re, and ro.
Use the common-emitter model for the common-collector configuration. 5
 The Hybrid Equivalent Model
The following hybrid parameters are developed and used for modeling the
transistor. These parameters can be found in a specification sheet for a transistor.

• hi = input resistance
• hr = reverse transfer voltage ratio (Vi/Vo)  0
• hf = forward transfer current ratio (Io/Ii)
• ho = output conductance  
Simplified General H-Parameter Model: Approximate hybrid equivalent model

• hi = input resistance
• hr = reverse transfer voltage ratio (Vi/Vo)  0
• hf = forward transfer current ratio (Io/Ii) 6
• ho = output conductance  
 re Model vs. h-Parameter Model

Common-Emitter

h ie  r e
h fe   ac

Common-Base

h ib  re
h fb     1

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 The Hybrid  Model

The hybrid  model is most useful for analysis of high-frequency transistor

applications.
At lower frequencies the hybrid  model closely approximate the re parameters,
and can be replaced by them.

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 AC Analysis with Equivalent models

Section 5.8 CE with fix-bias

Section 5.9 CE with voltage-divider bias
Section 5.10 CE with emitter bias CE
Section 5.14 CE with dc collector feedback bias
Section 5.13 CE with collector feedback
Section 5.11 CC: Emitter follower
Section 5.12 CB

AC unknowns
Amplification
Calculate:
circuit
•Impedance
– Input impedance
– Output impedance
DC analysis AC equivalent circuit •Gain
to determine re with re model – Voltage gain
– Current gain
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 Common-Emitter Fixed-Bias Configuration

AC network

• The input is applied to the base

• The output is from the collector
• High input impedance
• Low output impedance
• High voltage and current gain
• Phase shift between input and AC equivalent with re model
output is 180
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 Common-Emitter Fixed-Bias Calculations
Input impedance:
Zi R B || r e
Zi  r e R E  10  r e

Output impedance:
Zo R C || r O

Zo R C ro  10 R C

Voltage gain: Current gain:

Vo (R C || r o )
A v   Io R B ro
Vi re A i  
Ii (r o R C )(R B  r e )
R C
A v   10R
re
ro C A i  ro  10R C ,R B  10  r e
CE amplifiers:
• High input impedance Current gain from voltage gain:
• Low output impedance A i  A v
Zi

• High voltage and current gain R C

• Phase shift between input and

output is 180 11
 Common-Emitter Voltage-Divider Bias
re model requires you to determine , re, and ro.

Input impedance:
R R 1 || R 2 Current gain:
Zi  R  ||  r e Io  R r o
Output impedance: A i  
Ii (r o R C )( R   r e )
Zo R C || r o
Io R 
A i   ro  10R
Zo R C ro  10R Ii R   r e C
C

Voltage gain: Io
A i    r o  10R ,R   10  r e
Vo R C || r o Ii C
A v  
Vi re Current gain from voltage gain:
Vo R C Zi
A v   ro  10R C
A i  A v
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Vi re R C
 0 Common-Emitter Emitter-Bias Configuration
(Unbypassed RE)
Input impedance:
Zi  RB || Z b

  r e  (   1) R E
Zb
Output impedance:
Zo R C

Voltage gain:
Vo R C
A v  
Vi Zb

Vo R C
A v    (r e  R
Vi re R E
Z b E )

Vo R C
A v   Z b  R E
Vi R E

Current gain:
Io R B
A i  
Ii R B Z b
Current gain from voltage gain:
Zi 13
A i  A v
R C
 5.13 Common-Emitter Collector Feedback Configuration
Input impedance:
re • This is a variation of the
Zi  common-emitter fixed-
1 R C
 bias configuration
 R F
• Input is applied to the
Output impedance: base
Zo R || R F • Output is taken from the
C
collector
• There is a 180 phase
Voltage gain: shift between input and
A v 
Vo

R C output
Vi re

Current gain:
Io R F
A i  
I i R F  R C

Io R F
A i  
I i R C

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5.14 Collector DC Feedback Configuration

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 5.11 Emitter-Follower Configuration (CC)

• Emitter-follower is also
known as the common- Input impedance: Voltage gain:
collector configuration. Z i  R B || Z b Vo R E
A v  
• The input is applied to the Z b   r e  (   1)R E V i R E  re
base and the output is Z b  (r e  R E ) Vo
A v  1
taken from the emitter. Vi
R E  r e , R E r e R E

• There is no phase shift Z b  R E

Current gain:
between input and output. Output impedance: R B
A i 
Zo R E || r e R B Zb
Current gain from voltage gain:
Zo  re R E  r e
Zi
Ai  A 16
v
R E
 5.12 Common-Base Configuration

• The input is applied to the

emitter.
• The output is taken from the
collector.
• Low input impedance.
• High output impedance.
• Current gain less than unity.
• Very high voltage gain.
• No phase shift between input
and output.

Input impedance:
Zi R E || r e Voltage gain: Current gain:

Output impedance: Vo R C R C Io
A v    A i      1
Vi re re Ii
Zo R C 17
 5.17 Two-Port Systems Approach

This approach:
• Reduces a circuit to a two-port system
• Provides a “Thévenin look” at the output terminals
• Makes it easier to determine the effects of a changing load

With Vi set to 0 V:
Z Th  Zo  R o

The voltage across

the open terminals
is:
E Th  A vNL V i

where AvNL is the

no-load voltage
gain.

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 5.16 Effect of Load Impedance on Gain

This model can be applied

to any current- or voltage-
controlled amplifier.

Adding a load reduces the

gain of the amplifier:

R L
Vo = A v NL
Vi
Vo R L R L
+ R o
A v   A vNL
Vi R L R o

Zi
A i  A v
R L

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 5.16 Effect of Source Impedance on Gain

The fraction of applied

signal that reaches the
input of the amplifier is:

R iVs
Vi 
R i R s

R iV s
Vo = A v NL
Vi A v NL
R i
+ R s

The internal resistance of the signal source reduces the overall gain:
Vo R i
A vs   A vNL
Vs R i R s

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 5.16 Combined Effects of RS and RL on Voltage Gain

Effects of RL:
Vo R L A vNL
A v  
Vi R L R o

R i
A i  A v R L
R L
R iV s
R L Vo = A v NL
Vi = A v NL
R L
+ R o
R L
+ R o
R i
+ R s

Effects of RL and RS:

Vo R i R L
A vs   A vNL
Vs R i R s R L R o

R s R i
A is  A vs
R L

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 5.19 Cascaded Systems
• The output of one amplifier is the input to the next amplifier
• The overall voltage gain is determined by the product of gains of the individual
stages
• The DC bias circuits are isolated from each other by the coupling capacitors
• The DC calculations are independent of the cascading
• The AC calculations for gain and impedance are interdependent

Zi Zi A  A v  A v  A v  A v
1 vT 1 2 3 n A v1
,A v2
,A v3
, , A vn
Zi are loaded gains
Zo Zo A iT
 A v 1

n T
R L
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 R-C Coupled BJT Amplifiers

Input impedance, first stage:

Z i
= Z i1
= R 1
|| R 2
|| β r e1

Output impedance, second stage:

Z o
= R C2

Voltage gain:

R C1
|| Z i2
R C1
|| R 3
|| R 4
|| β r e2 Z = R || R || β r e2
A V1
= - = i2 3 4
r e1 r e1

R C 2
A V2
= -
r e2

A V
= A V1
A V2
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 Cascode Connection: CE–CB

This example is a CE–CB combination.

This arrangement provides high input
impedance but a low voltage gain.

The low voltage gain of the input stage

reduces the Miller input capacitance,
making this combination suitable for
high-frequency applications.

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 5.20 Darlington Connection
The Darlington circuit provides a very high current
gain—the product of the individual current gains:
D = 12

The practical significance is that the circuit provides

a very high input impedance.

5.21 Feedback Pair

This is a two-transistor circuit that operates like a Darlington pair, but it is not a
Darlington pair.
It has similar characteristics:
• High current gain PNP
• Low Voltage gain (near unity)
• Low output impedance
D = 12
• High input impedance

The difference is that a Darlington uses a pair of like transistors,

whereas the feedback-pair configuration uses complementary
transistors. 25
 5.22 Current Mirror Circuits
Current mirror circuits provide constant
current in integrated circuits.

I E
β+ 2
I X
= I E
+ 2I B
= I E
+ 2 = I E
β β

β V CC - V BE
I E
= I X
IX =
β+ 2 R X

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Current mirror circuit with higher output
impedance.
 5.23 Current Source Circuits
Constant-current sources can be built using FETs, BJTs, and combinations of
these devices.

IE  IC
VZ  V BE
I IE 
R E

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 Summary of Chapter 5

• AC analysis
– Load line analysis
– Mathematical analysis by small signal model
• AC analysis method by small signal model
– DC analysis to determine re
– AC equivalent circuit by re model
– Calculation impedance and gain
• CE amplifier
• CB amplifier
• CC amplifier
• Cascaded amplifier system
– Effect of Rs and RL
– CE-CB

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