NARAYANA MEDICAL ACADEMY (d) It has holes as charge carriers

KUVEMPU BHAVAN-BANGALORE 8. In the circuit given below, the value of the

DIODES-DPP current is
1. In the forward bias arrangement of a PN-
PN 300 + 1V
junction diode + 4V

(a) The N-end is connected to the positive

(a) 0 amp (b) 10 −2 amp
terminal of the battery
(b) The P-end is connected to the positive (c) 10 2 amp (d) 10 −3 amp
terminal of the battery 9. What is the current in the circuit shown below
(c) The direction of current is from N-end to P- PN 300 – 1V
– 4V
end in the diode
(a) 0 amp (b) 10 −2 amp
(d) The P-end is connected to the negative
terminal of battery (c) 1 amp (d) 0.10 amp
2. In a PN-junction diode 10. The PN junction diode is used as
(a) The current in the reverse biased condition is (a) An amplifier (b) A rectifier
generally very small (c) An oscillator (d) A modulator
(b) The current in the reverse biased condition is 11. When a PN junction diode is reverse biased
small but the forward biased current is
(a) Electrons and holes are attracted towards
independent of the bias voltage
each other and move towards the depletion
(c) The reverse biased current is strongly
region
dependent on the applied bias voltage
(b) Electrons and holes move away from the
(d) The forward biased current is very small in
comparison to reverse biased current junction depletion region
3. The cut-in voltage for silicon diode is (c) Height of the potential barrier decreases
approximately (d) No change in the current takes place
(a) 0.2 V (b) 0.7 V 12. Two PN-junctions can be connected in series by
(c) 1.1 V (d) 1.4 V three different methods as shown in the figure.
If the potential difference in the junctions is the
4. The electrical circuit used to get smooth dc
same, then the correct connections will be
output from a rectifier circuit is called
(a) Oscillator (b) Filter P N N P P N P N N P N P

(c) Amplifier (d) Logic gates

5. PN-junction diode works as a insulator, if + – + – + –
1 2 3
connected
(a) In the circuit (1) and (2) (b)In the circuit (2) and (3)
(a) To A.C. (b) In forward bias
(c) In the circuit (1) and (3) (d)Only in the circuit (1)
(c) In reverse bias (d) None of these
13. A PN- junction has a thickness of the order of
6. The reverse biasing in a PN junction diode
(a) 1 cm (b) 1 mm
(a) Decreases the potential barrier
(b) Increases the potential barrier (c) 10 −6 m (d) 10 −12 cm
(c) Increases the number of minority charge 14. In the depletion region of an unbiased P-N
carriers junction diode there are
(d) Increases the number of majority charge (a) Only electrons
carriers (b) Only holes
7. The electrical resistance of depletion layer is (c) Both electrons and holes
large because (d) Only fixed ions
(a) It has no charge carriers 15. On increasing the reverse bias to a large value in
(b) It has a large number of charge carriers a PN-junction diode, current
(c) It contains electrons as charge carriers (a) Increases slowly (b) Remains fixed
 (c) Suddenly increases (d) Decreases slowly (b) Concentration of positive charges near the
16. In the case of forward biasing of PN-junction, junction
which one of the following figures correctly (c) Depletion of negative charges near the
depicts the direction of flow of carriers
junction
– + – +
P – + N P – + N (d) Concentration of positive and negative
– + – +
(a) – + (b) – +
 – +
→ → – +
→ charges near the junction
22. In a PN-junction diode not connected to any
Vp Vp
circuit
P
–
–
+
+ N P
–
–
+
+ N (a) The potential is the same everywhere
– + – +
– + – +
(c) → – +
 (d)  – +
 (b) The P-type is a higher potential than the N-
type side
Vp Vp (c) There is an electric field at the junction
17. Which of the following statements concerning directed from the N- type side to the P- type
the depletion zone of an unbiased PN junction is side
(are) true (d) There is an electric field at the junction
(a) The width of the zone is independent of the directed from the P-type side to the N-type
densities of the dopants (impurities) side
(b) The width of the zone is dependent on the 23. Which of the following statements is not true
densities of the dopants
(a) The resistance of intrinsic semiconductors
(c) The electric field in the zone is produced by
decrease with increase of temperature
the ionized dopant atoms
(d) The electric field in the zone is provided by (b) Doping pure Si with trivalent impurities give
the electrons in the conduction band and the P-type semiconductors
holes in the valence band (c) The majority carriers in N-type
18. A semiconductor device is connected in a series semiconductors are holes
circuit with a battery and a resistance. A current (d) A PN-junction can act as a semiconductor
is found to pass through the circuit. If the
diode
polarity of the battery is reversed, the current
drops almost to zero. The device may be 24. The dominant mechanisms for motion of charge
(a) A P-type semiconductor (b)An N-type semiconductor carriers in forward and reverse biased silicon P-N
junctions are
(c) A PN-junction (d) An intrinsic
semiconductor (a) Drift in forward bias, diffusion in reverse bias
19. In a junction diode, the holes are due to (b) Diffusion in forward bias, drift in reverse bias
(a) Protons (b) Neutrons (c) Diffusion in both forward and reverse bias
(c) Extra electrons (d) Missing of (d) Drift in both forward and reverse bias
electrons 25. In P-N junction, avalanche current flows in circuit
20. In forward bias, the width of potential barrier in when biasing is
a P-N junction diode
(a) Forward (b) Reverse
(a) Increases
(c) Zero (d) Excess
(b) Decreases
26. The depletion layer in the P-N junction region is
(c) Remains constant
caused by
(d) First increases then decreases
(a) Drift of holes
21. The cause of the potential barrier in a P-N diode
(b) Diffusion of charge carriers
is
(c) Migration of impurity ions
(a) Depletion of positive charges near the
junction (d) Drift of electrons
27. Which one is reverse-biased 34. Zener breakdown in a semi-conductor diode
10V occurs when
15V
(a) (b) – 5V (a) Forward current exceeds certain value
– 10V (b) Reverse bias exceeds certain value
– 5V (c) Forward bias exceeds certain value
(c) (d) (d) Potential barrier is reduced to zero
– 10V
10V 35. When forward bias is applied to a P-N junction,
then what happens to the potential barrier VB ,
28. Which one is in forward bias
and the width of charge depleted region x
(a) VB increases, x decreases
(a) (b)
(b) VB decreases, x increases
+ –
(c) VB increases, x increases
(c) (d) None of these (d) VB decreases, x decreases
– + 36. The potential barrier, in the depletion layer, is
due to
29. The reason of current flow in P-N junction in
forward bias is (a) Ions (b) Holes
(c) Electrons (d) Both (b) and (c)
(a) Drifting of charge carriers
37. In the given figure, which of the diodes are
(b) Minority charge carriers
forward biased ?
(c) Diffusion of charge carriers
+5V
(d) All of these +10V
R
30. The resistance of a reverse biased P-N junction 1. 2.
diode is about +5V
(a) 1 ohm (b) 10 2 ohm
(c) 10 3 ohm (d) 10 6 ohm – 12V
R
31. Consider the following statements A and B and 3. – 10 V 4.
identify the correct choice of the given answers – 5V
A: The width of the depletion layer in a P-N
junction diode increases in forwards bias 5. R
B: In an intrinsic semiconductor the fermi
– 10V
energy level is exactly in the middle of the
forbidden gap (a) 1, 2, 3 (b) 2, 4, 5
(a) A is true and B is false (b) Both A and B are (c) 1, 3, 4 (d) 2, 3, 4
false 38. Which one is in forward bias
(c) A is false and B is true (d) Both A and B are
true (a) (b)
32. Avalanche breakdown is due + –

(a) Collision of minority charge carrier

(b) Increase in depletion layer thickness (c) (d) None of thes
(c) Decrease in depletion layer thickness – +

(d) None of these

33. Which is reverse biased diode
39. A 2V battery is connected across the points A
(a) (b) –20V
and B as shown in the figure given below.
5V Assuming that the resistance of each diode is
–10V
zero in forward bias and infinity in reverse bias,
(c) 15V (d) 10V the current supplied by the battery when its
10V – 5V positive terminal is connected to A is
 10  45. In a forward biased PN-junction diode, the
(a) 0.2 A potential barrier in the depletion region is of the
10  form …
(b) 0.4 A V V
(c) Zero
(d) 0.1 A A B (a) (b)
40. In the circuit, if the forward voltage drop for the
p n p n
diode is 0.5V, the current will be
0.5V

(a) 3.4 mA
V V
(b) 2 mA 8V 2.2K
(c) 2.5 mA
(c) (d)
(d) 3 mA
41. A P-type semiconductor has acceptor levels 57 p n p n
meV above the valence band. The maximum
46. A semiconductor X is made by doping a
wavelength of light required to create a hole is
germanium crystal with arsenic (Z = 33). A
(Planck’s constant h = 6.6  10 −34 J-s)
second semiconductor Y is made by doping
(a) 57 Å (b) 57  10 −3 Å
germanium with indium (Z = 49). The two are
(c) 217100 Å (d) 11 . 61  10 −33 Å
joined end to end and connected to a battery as
42. Current in the circuit will be shown. Which of the following statements is
5 20 
(a) A correct
40
30 
5 X Y
(b) A
50 i
5
(c) A
20  5V
10
5
(d) A
20
43. The diode used in the circuit shown in the figure (a) X is P-type, Y is N-type and the junction is
has a constant voltage drop of 0.5 V at all forward biased
currents and a maximum power rating of 100 (b) X is N-type, Y is P-type and the junction is
milliwatts. What should be the value of the forward biased
resistor R, connected in series with the diode for
(c) X is P-type, Y is N-type and the junction is
obtaining maximum current
reverse biased
R 0.5 V
(a) 1.5  (d) X is N-type, Y is P-type and the junction is
(b) 5  reverse biased
(c) 6.67  47. In the diagram, the input is across the terminals
(d) 200  1.5 V A and C and the output is across the terminals B
B
and D, then the output is
44. The temperature (T) dependence of resistivity
() of a semiconductor is represented by (a) Zero
A C
(a)  (b)  (b) Same as input
(c) Full wave rectifier
D
(d) Half wave rectifier
O T O T

(c) (d)
 

O T O T
48. The current through an ideal PN-junction shown 54. In the following circuit the equivalent resistance
in the following circuit diagram will be between A and B is
4 6
(a) Zero P N 100

(b) 1 mA A B
1V 2V 2
(c) 10 mA – 10V – 2V
8 12
(d) 30 mA
49. A waveform shown when applied to the 20
(a)  (b) 10 
3
following circuit will produce which of the
(c) 16  (d) 20 
following output waveform. Assuming ideal
diode configuration and R1 = R2 55. A diode having potential difference 0.5 V across
R1 its junction which does not depend on current,
5V
is connected in series with resistance of 20 
Vin across source. If 0.1 A passes through resistance
R2 V0
–5V then what is the voltage of the source
(a) 1.5 V (b) 2.0 V
(a) + 5V (b)
(c) 2.5 V (d) 5 V
56. The energy gap of silicon is 1.5 eV. At what
– 5V
wavelength the silicon will stop to absorb the
photon
(c) 2.5V (d) (a) 8250 Å (b) 7250 Å
– 2.5V (c) 6875.5 Å (d) 5000 Å
57. In the following circuit I1 and I2 are respectively
50. For given electric voltage signal dc value is 2k
(a) 0, 0 i2
V
(b) 5 mA, 5 mA
10 V
6.28V 14k 12k
(c) 5 mA, 0 i1
t (d) 0, 5 mA
58. In a pure silicon (ni = 1016/m3) crystal at 300 K,
(a) 6.28 V (b) 3.14 V
1021 atoms of phosphorus are added per cubic
(c) 4 V (d) 0 V meter. The new hole concentration will be
51. If a full wave rectifier circuit is operating from 50 (a) 1021 per m3 (b) 1019 per m3
Hz mains, the fundamental frequency in the (c) 1011 per m3 (d) 105 per m3
ripple will be 59. In the following circuit of PN junction diodes D1,
(a) 50 Hz (b) 70.7 Hz D2 and D3 are ideal then i is
R
(c) 100 Hz (d) 25 Hz
D1
R
52. In a full wave rectifiers, input ac current has a
D2
frequency ‘’. The output frequency of current is
(a) /2 (b)  i D3 R

(c) 2 (d) None of these E

(a) E/R(b)E/2R (c)2E/3R (d) Zero
53. When a silicon PN junction is in forward biased
condition with series resistance, it has knee
voltage of 0.6 V. Current flow in it is 5 mA, when
PN junction is connected with 2.6V battery, the
value of series resistance is
(a) 100  (b) 200 
(c) 400  (d) 500 
DIODES-DPP-KEY 19. (d)

1. (b) 20. (b) In forward biasing width of depletion layer

decreases.
2. (a) In forward biased PN-junction, external
voltage decreases the potential barrier, so 21. (d)
current is maximum. While in reversed 22. (c) At junction a potential barrier/depletion
biased PN-junction, external voltage layer is formed, with N-side at higher
increases the potential barrier, so the current potential and P-side at lower potential.
is very small. Therefore there is an electric field at the
3. (b) The voltage at which the forward diode junction directed from the N-side to P-side
current begins to start increasing rapidly is E
P N
known as the cut0in voltage of a diode. Holes
Electrons
4. (b) Filter circuits are used to get smooth dc -
filter is the best filter.
5. (c) In reverse bias no current flows.
6. (b) In reverse biasing, width of depletion layer
23. (c) In N-type semiconductor majority charge
increases.
carriers are electrons.
7. (a) Depletion layer has no charge carriers,it 24. (b) In forward biasing the diffusion current
consist of mainly stationary ions. increases and drift current remains constant
8. (b) Current flow is possible and so not current is due to the diffusion.
V (4 − 1) In reverse biasing diffusion becomes more
i= = = 10 − 2 A
R 300 difficult so net current (very small) is due to
9. (a) The potential of P-side is more negative that the drift.
of N-side, hence diode is in reverse biasing. 25. (b) At a particular reverse voltage in PN-
junction, a huge current flows in reverse
In reverse biasing it acts as open circuit,
direction known as avalanche current.
hence no current flows.
26. (b) Due to the large concentration of electrons
10. (b) It is used to convert ac into dc (rectifier) in N-side and holes in P-side, they diffuses
from their own side to other side. Hence
P N
depletion region produces.
27. (c) Only in option (c), P-side is more negative as
11. (b) compared to N-side.
12. (b) Because in case +(1)– N is connected with N. 28. (b) In forward biasing P-side is connected with
This is not a series combination of transistor. positive terminal and N-side with negative
terminal of the battery
13. (c)
29. (c) In forward biasing of PN-junction diode,
14. (d) In the depletion region of an unbiased pn current mainly flows due to the diffusion of
junction diode there are only fixed or majority charge carriers.
immobile positive and negative ions. 30. (d)
15. (c) After a large reverse voltage is PN-junction 31. (c) In forward biasing of PN junction diode
width of depletion layer decreases. In
diode, a huge current flows in the reverse
intrinsic semiconductor fermi energy level is
direction suddenly. This is called Breakdown exactly in the middle of the forbidden gap
of PN-junction diode.
C.B.
16. (c) In forward biasing both positive and negative
charge carriers move towards the junction. Ef

17. (b,c)
V.B.
18. (c) When polarity of the battery is reversed, the
P-N junction becomes reverse biased so no 32. (a) At high reverse voltage, the minority charge
current flows. carriers, acquires very high velocities. These
 by collision break down the covalent bonds, terminal of battery and P(i.e. Y) is connected
generating more carriers. This mechanism is to negative terminal of battery so PN-
called Avalanche breakdown. junction is reverse biased.
47. (c) The given circuit is full wave rectifier.
33. (b) Because P-side is more negative as
48. (a) The diode is in reverse biasing so current
compared to N-side.
through it is zero.
34. (b) When reverse bias is increased, the electric
49. (d) The P-N junction will conduct only when it is
field at the junction also increases. At some
forward biased i.e. when – 5V is fed to it, so it
stage the electric field breaks the covalent
bond, thus the large number of charge will conduct only for 3rd quarter part of signal
carriers are generated. This is called Zener shown and when it conducts potential drop 5
breakdown. volt will be across both the resistors, so output
35. (d) In forward biasing both VB and x decreases. voltage across R2 is 2.5 V.
36. (a)  V0 = − 2.5 V
37. (b) In figure 2,4 and 5. P-crystals are more 2 V0 2  6 .28
50. (c) Vdc = Vac = = = 4 V.
positive as compared to N-crystals.  3 .14
38. (b) 51. (c) In full wave rectifier, the fundamental
39. (a) Since diode in upper branch is forward frequency in ripple is twice that of input
biased and in lower branch is reversed biased. So frequency.
V
current through circuit i = ; here rd = diode 52. (c)
R + rd
0.6V
53. (c) R
resistance in forward biasing = 0
(2 .6 − 0 .6)
 i=
V
=
2
= 0 .2 A . R= = 400 .
R 10 5  10 − 3 i
40. (a) The voltage drop across resistance = 8 – 0.5 =
7.5 V
7 .5 2.6V
 Current i = = 3 .4 mA
2 .2  10 3
hc hc 6.6  10 −34  3  10 8 54. (c) According to the given figure A is at lower
41. (c) E =  = =
 E 57  10 −3  1.6  10 −19 potential w.r.t. B. Hence both diodes are in
=217100Å. reverse biasing, so equivalent, circuit can be
42. (b) The diode in lower branch is forward biased
redrawn as follows.
and diode in upper branch is reverse biased
5 5  Equivalent resistance between A and B
 i= = A.
20 + 30 50 R = 8 + 2 + 6 = 16 .
43. (b) The current through circuit
P 100  10 −3 4 6
i= = = 0 .2 A
V 0 .5 2
A B
 voltage drop across resistance = 1.5 – 0.5 8 12
=1V
1
 R= = 5. 55. c) V ' = V + IR 20 
0 .2
44. (c) With rise in temperature, resistivity of = 0.5 + 0.1  20 0.1 A

semiconductors decreases exponentially. = 2.5 V

45. (b) Potential across the PN junction varies
symmetrically linear, having P side negative and
N side positive.
56. (a)
46. (d) Arsenic has five valence electrons, so it a
donor impurity. Hence X becomes N-type hc 6 . 6  10 −34  3  10 8
= = = 8 . 25  10 −7 m = 8250 Å
semiconductor. Indium has only three outer E 1 . 5  1 . 6  10 −19
electrons, so it is an acceptor impurity. The photon having wavelength equal to
Hence Y becomes P-type semiconductor.
8250Å or more than this will not able to
Also N (i.e. X) is connected to positive
overcome the energy gap of silicon.
57. (d) Equivalent circuit can be redrawn as follows
i 2k
i2

10 V 14k 12k
10
i= = 5 imA
1 = i2
2

i1 = 0

58. (c) By using mass action law ni2 = ne nh

ni2 (10 16 )2
 nh = = = 10 11 per m 3
ne 10 21

59. (a) Diodes D1 and D3 are forward biased and D2

is reverse biased so the circuit can be redrawn as
follows.
R
E
i=
R R

i R

***