stps40120c
stps40120c
Datasheet
A1 Features
K
A2 • High junction temperature capability
• Avalanche rated
K K • Low leakage current
• Good trade-off between leakage current and forward voltage drop
• ECOPACK®2 compliant
A2 A2
K K
A1 A1
TO-220AB TO-220AB Applications
narrow leads • Switching diode
• SMPS
• DC/DC converter
• LED lighting
• Notebook adapter
Description
This dual center tap Schottky rectifier is ideally suited for high frequency switch mode
power supply.
Packaged in TO-220AB and TO-220AB narrow leads, the STPS40120C is optimized
for use in notebook and LCD adapters, desktop SMPS, providing in these
applications a margin between the remaining voltages applied on the diode and the
Product status link voltage capability of the diode.
STPS40120C
Product summary
Symbol Device
IF(AV) 2 x 20 A
VRRM 120 V
Tj (max.) 175 °C
VF (typ.) 0.69 V
1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified, per diode)
Per diode 20
IF(AV) Average forward current , Tc = 145 °C, δ = 0.5 A
Per device 40
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 200 A
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Tj = 25 °C - 25 µA
IR(1) Reverse leakage current VR = VRRM
Tj = 125 °C - 4 12 mA
Tj = 25 °C - 0.73
IF = 7.5 A
Tj = 125 °C - 0.57 0.61
Tj = 25 °C - 0.90
VF(2) Forward voltage drop IF = 20 A V
Tj = 125 °C - 0.69 0.73
Tj = 25 °C - 1.00
IF = 40 A
Tj = 125 °C - 0.83 0.88
Figure 1. Average forward power dissipation versus Figure 2. Average forward current versus ambient
average forward current (per diode) temperature (δ = 0.5, per diode)
PF(AV)( W) IF(AV)(A)
20 22
Rth(j-a) =Rt h(j-c)
δ = 0.5 20
18
16 18
δ = 0.2
16
14 δ = 0.1 δ=1
14
12
δ = 0.05
12
10 Rth(j-a) = 15°C/W
10
8
8
6
6
T T
4 4
2 2
IF(AV)(A) δ =tp/T tp δ =tp/T tp Tamb(°C )
0 0
0 2 4 6 8 10 12 14 16 18 20 22 24 0 25 50 75 100 125 150 175
0.8
0.7
0.1 0.6
0.5
0.4
0.01 0.3
0.2
Single pulse
0.1
t p(µs)
t p(s )
0.001 0.0
1 10 100 1000 1.E-03 1.E-02 1.E-01 1.E+00
Figure 5. Reverse leakage current versus reverse voltage Figure 6. Junction capacitance versus reverse voltage
applied (typical values, per diode) applied (typical values, per diode)
IR (mA ) C (pF)
1.E+02 1000
F= 1MHz
VOSC =30mVRMS
1.E+01 Tj =150°C Tj = 25°C
Tj =125°C
1.E+00
Tj =100°C
1.E-01
Tj =75°C
100
1.E-02 Tj =50°C
1.E-03
Tj =25°C
1.E-04
VR(V) VR(V)
1.E-05 10
0 10 20 30 40 50 60 70 80 90 100 110 120 1 10 100
IF (A)
100
T=
j 125°C
(maximum values)
10
VF (V)
1
0.0 0 .2 0.4 0 .6 0.8 1 .0 1.2 1.4
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Dimensions
ØP A
E F
Q
H1
D
D1
L20
L30
L1
b1(x3)
J1
L
1 2 3 C
e
b (x3)
e1
Dimensions
3 Ordering information
Revision history