ASSIGNMENT

ITER, SIKSHA ‘O’ ANUSANDHAN

(Deemed to be University)

Computer Science and Engineering,

Branch Computer Science and Information Programme B.Tech
Technology
Semiconductor Materials And
Course Name Semester VIII
Devices
Course Code EET4609 Year/Period 2025/Even
ASSIGNMENT- Maximum
Submit All Assignments 10 GP-6
01 Marks
Learning Level L1: Remembering L3: Application L5: Evaluation
(LL) L2: Understanding L4: Analysis L6: Creation
Q. No. Questions COs LL
1 Derive the relationship between Resistivity and Conductivity. CO3 L4
2 Define Node, Bonding and Anti-bonding Orbital. CO1 L2
3 State Pauli’s Exclusion Principle. CO1 L3
Differentiate between Metal, Semiconductor and Insulator with
4 CO5 L5
the help of the energy band diagram.
5 How would you define Fermi energy? CO3, CO5 L5
6 Classify the semiconductors with proper examples. CO5 L6
Write down the difference between Direct band gap
7 CO4 L6
Semiconductor and Indirect band gap Semiconductor.
8 Discuss the properties of Semiconductor. CO2 L3
Write the equation for Barrier potential and Total depletion
9 CO6 L5
width.
10 State ‘Mass Action Law’. CO2 L4
11 Define ‘Effective Mass’. CO3 L4
Illustrate the mechanism of Drift, Generation and
12 CO1 L2
Recombination of electron-hole pairs with proper figure.
How would you explain the position of Fermi Level in case of
13 Intrinsic and Extrinsic Semiconductor (for both n-type and p- CO1 L3
type) with sketch?
14 Define Diffusion with Einstein’s Relationship. CO5 L5
Find the concentration of donor atoms to be added to an
intrinsic Ge sample to produce an n-type material of
15 CO3, CO5 L5
conductivity 480 9S/m. The electron mobility in n-type Ge is
0.38m2/V.s.
The intrinsic carrier density is 1.5 × 1016 m–3. If the mobility of
16 electron and hole are 0.13 and 0.05 m2 V–1 s–1, calculate the CO5 L6
conductivity and intrinsic resistivity.
The band gap of a sample of GaAsP is 1.98eV. Determine the
wavelength of the electromagnetic radiation that is emitted
17 CO4 L6
upon direct recombination of electrons and holes in this
sample. What is the color of the emitted radiation?
The reverse saturation current at 300K of a p-n junction Ge
18 diode is 5µA. Find the voltage to be applied across the junction CO2 L3
to obtain a forward current of 50mA..
19 How Ohmic Junction and Schottky Junction formed? CO6 L5
Define Ohmic contact with appropriate energy-band diagram
20 CO2 L4
of a metal and n-type ohmic contact.
 21 Write a short note on Schottky diode. CO2 L4
22 Explain ‘Depletion Region’ with proper diagram. CO3 L4
Explain the mechanism of Forward and Reverse-biased p-n
23 CO1 L2
junction with proper circuit representation.
Explain the Current-Voltage characteristics of a p-n junction
24 CO1 L3
with proper graphical representation and equation.
A Si pn junction has 1016 cm-3 acceptors on the p-side and
5x1016 cm-3 donors on the n-side. What is the built-in potential
25 and total depletion width of the junction? Also, what are the CO5 L5
depletion widths on the p and n sides? Take dielectric
constant for Si to be 11.2.
Explain the factors on which the conductivity of a
26 semiconductor depends. CO2 L4

27 What is cutin voltage and Breakdown Voltage of the diode? CO3 L4

28 Define the DOS and its significance. CO1 L2
Explain the temperature effect on Intrinsic carrier
29 concentration CO1 L3

Differentiate n type and p type doping in extrinsic

30 semiconductors CO5 L5

Assignment -01 Topic: Electronic Materials, Semiconductors: Introduction, Date of Date of

Electron Statistics in a Solid, Intrinsic and Extrinsic Assignment- submission:
Semiconductors, Metal–Semiconductor Junctions, pn 01: 10.04.25
Junctions 02.04.25

Note:
1. The Assignments in total carry weightage of 20 marks out of 100
2. Course outcome CO1 to CO4 was covered.

Have a thorough understanding of semiconductor material properties to

CO1
underlying physics
The ability to understand, analyse charge carrier dynamics and will be able to
CO2
understand the fundamentals of Semiconductors
CO3 To understand the metal-semiconductor junction to charge carrier action
Course
Outcomes Analyse and classify the characteristics of various electronic devices (Diode,
CO4
BJT, JEFT, MOSFET)
Illustrate the device manufacturing process including wafer growth and IC
CO5
fabrication
Understanding the various steps behind fabrication of devices and explain the
CO6
challenges