0% found this document useful (0 votes)
22 views2 pages

Transistor Cdi Yamaha Virago e Outras 2sd2141-Inchange

transistor de cdi moto
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
22 views2 pages

Transistor Cdi Yamaha Virago e Outras 2sd2141-Inchange

transistor de cdi moto
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor 2SD2141

DESCRIPTION
·High DC Current Gain-
: hFE = 1500(Min)@ IC= 3A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 4A
·Incorporating a built-in zener diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for use in ignitor, driver for solenoid,motor and
general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 330-430 V

VCEO Collector-Emitter Voltage 330-430 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current-Continuous 6 A

ICM Base Current-Peak 10 A

IB Base Current-Continuous 1 A

Collector Power Dissipation


PC 35 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor 2SD2141

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 330 430 V

V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA; IE= 0 330 430 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 20mA; IC= 0 6 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 20mA 1.5 V

VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 20mA 2.0 V

ICBO Collector Cutoff Current VCB= 330V; IE= 0 10 μA

IEBO Emitter Cutoff Current VEB= 6V; IC= 0 20 mA

hFE DC Current Gain IC= 3A; VCE= 2V 1500

fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= 12V 20 MHz

COB Output Capacitance IE=0 ; VCB=10V;ftest=1.0MHz 95 pF

NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products,
and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages.

isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark

You might also like