UNISONIC TECHNOLOGIES CO.

, LTD
22N60 Power MOSFET

022A, 600V N-CHANNEL

POWER MOSFET

 DESCRIPTION
As the SMPS MOSFET, the UTC 22N60 uses UTC’s
advanced technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
 FEATURES
* RDS(ON) < 0.35Ω @ VGS=10V, ID=13A
* Ultra Low Gate Charge ( Typical 150 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 36 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
 SYMBOL

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
22N60L-T47-T 22N60G-T47-T TO-247 G D S Tube
22N60L-T3P-T 22N60G-T3P-T TO-3P G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw 1 of 8
Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-216.J
22N60 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current IAR 22 A
Continuous Drain Current ID 22 A
Pulsed Drain Current (Note 1) IDM 88 A
Single Pulsed EAS 380 mJ
Avalanche Energy
Repetitive EAR 37 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 18 V/ns
TO-247 416
Power Dissipation PD W
TO-3P 446
Junction Temperature TJ 150 °C
Operating Temperature TOPR -55 ~ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-247 40
Junction to Ambient θJA °C /W
TO-3P 30
TO-247 0.30
Junction to Case θJC °C /W
TO-3P 0.28

UNISONIC TECHNOLOGIES CO., LTD 2 of 6

www.unisonic.com.tw QW-R502-216.J
22N60 Power MOSFET

 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 600 V
Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 50 µA
Gate- Source Leakage Current IGSS VDS=0V, VGS=±30V ±100 nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=1mA,Referenced to 25°C 0.30 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=13A (Note 4) 0.26 0.35 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 3570 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1.0MHz 350 pF
Reverse Transfer Capacitance CRSS 36 pF
SWITCHING PARAMETERS
Turn-ON Delay Time tD(ON) 160 ns
Turn-ON Rise Time tR VDD=300V, ID=22A, RG=6.2Ω 300 ns
Turn-OFF Delay Time tD(OFF) VGS=10V (Note 4) 900 ns
Turn-OFF Fall-Time tF 400 ns
Total Gate Charge QG 500 nC
VDS=480V, VGS=10V,
Gate Source Charge QGS 46 nC
ID=22A (Note 4)
Gate Drain Charge QGD 170 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=22A 1.5 V
Continuous Source Current (Body Diode) IS (Note 1) 22 A
Pulsed Source Current (Body Diode) ISM 88 A
Reverse Recovery Time trr IS=22A, di/dt=100A/μs 590 890 ns
Reverse Recovery Charge QRR (Note 4) 7.2 11 µC
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature
2. TJ = 25°C, L = 1.5mH, RG=25Ω, IAS = 22A
3. ISD ≤ 22A, di/dt ≤540A/μs, VDD ≤ V(BR)DSS, TJ ≤150°C
4. Pulse Width ≤ 300 s, Duty Cycle ≤ 2%

UNISONIC TECHNOLOGIES CO., LTD 3 of 6

www.unisonic.com.tw QW-R502-216.J
22N60 Power MOSFET

 TEST CIRCUITS

RD
VDS

VGS
RG
VDD

D.U.T.
10V
Pulse Width≤ 1μs

Duty Factor≤0.1%

Switching Test Circuit Switching Waveforms

V(BR)DSS
15V

Driver

L
VDS

RG DUT
VDD
20V IAS IAS
tp 0.01Ω tp

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

QG
10V

QGS QGD

VGS

Charge

Gate Charge Test Circuit Gate Charge Waveform

UNISONIC TECHNOLOGIES CO., LTD 4 of 6

www.unisonic.com.tw QW-R502-216.J
22N60 Power MOSFET

 TEST CIRCUITS(Cont.)

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

UNISONIC TECHNOLOGIES CO., LTD 5 of 6

www.unisonic.com.tw QW-R502-216.J
22N60 Power MOSFET

 TYPICAL CHARACTERISTICS

Source Current vs. Drain-Source

Source to Drain Voltage On-State Resistance Characteristics
12 12

10 10

Drain Current, ID (A)

VGS=10V,
Drain Current, IS (A)

ID=10A
8 8

6 6

4 4

2 2

0 0
0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4
Source to Drain Voltage, VSD (V) Drain to Source Voltage, VDS (V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD 6 of 6

www.unisonic.com.tw QW-R502-216.J