Jo u r n a l o f In fo r m a t ics a n d Co m p u t e r En g in e e r in g ( JICE)

Vol. 2(4), Jul. 20 16, pp. 150 -156

Investigation of Very Fast Transient Over Voltages in

Gas Insulated Substations
S. Rahmani, A. A. Razi-Kazemi, IEEE member
K. N. Toosi University of Technology, Tehran, Iran
[email protected], [email protected]

Abstract—Gas Insulated Substations (GISs) have found a of the disconnector switch or breaker is overreached by the
broad range of applications in power system over the last three given over-voltage, pre-strike between the contacts occurs.
decades because of their high reliability, easy maintenance, small This is a common event in GIS, which generates VFTO. It
ground space requirements, etc. Although GIS have been could enter the substation and may propagate inside the
involved in power systems since long time ago, some of the substation layout. The level and shape of VFTO depends on
problems are of more attention. These problems include the GIS infrastructure. Consequently, the analysis of switching
generation and propagation of very fast transient over-voltages transients and VFTOs in GIS is desperately important.
(VFTO) during switching of circuit breakers or disconnector
switches or earth faults. The generated VFTO causes stress in the According to IEC 60071-4, VFTO is characterized by rise
air-insulated switchgear and secondary equipment. This paper time of 3 to 100 ns with oscillations at frequencies 0.3 MHz to
presents a modeling guideline for VFTO in GIS. The origin of 100MHz [9-14], [17]. Surge arresters cannot control these
VFTO, its propagation and impacts on GIS have been discussed VFTOs due to their extreme rise time. However, the ZnO
in this paper. Estimation of VFTO has been carried out using surge arrester may effectively limit the amplitude of VFTOs
EMTP-RV for various switching conditions. The variations in but cannot suppress the wave steepness due to its great rate of
VFTO peak along the GIS bus nodes regarding the different rise [17]. The magnitude of VFTO could reach 1.5pu to 2.0pu
magnitudes of trapped charges have been studied. The results of the line-to-neutral voltage crest, or even 2.5pu in the worst
indicate a distinct pattern of variation of VFTO peak along the case. These values are commonly below BIL of the
nodes of the GIS bus in the case of DS operation as compared to
components used in GIS. BIL is the basic impulse level which
that of CB operation. Moreover, the increase of trapped charge
on the line increases VFTO levels. Finally, the beneficiary of
is the peak value of standard lightning impulse withstands
several methods has been discussed to reduce VFTO amplitudes voltage of system. The ratio of the BIL to the system voltage
such as damping resistor, Ferrite rings and Nanocristalline rings. is lower in higher voltages; accordingly the VFT in GIS is of
Keywords—EMTP; Very Fast Transient Overvoltage (VFTO); greater anxiety in high voltages [18]. Even though the
Gas Insulated Substation (GIS); Damping Resistor; Ferrite Rings; magnitudes of VFTO are lower than BIL of the system, they
Nanocristalline Rings; Trapped Charge cause reduction in the life of insulation in the system such as
transformers due to their frequent occurrences [4]. Besides the
over-voltages caused by VFT, the stress due to high
I. INTRODUCTION frequencies may be critical for internal components like
Power system consists of various components such as spacers.
power stations, substations, transmission lines and various
loads, etc. With increase of demand of energy, more This paper covers the estimation of VFTO at various
substations are needed to be installed It is estimated that GIS locations in GIS for different switching operations.
require approximately 10% of the area required for Furthermore, disconnector switching operations in comparison
conventional substations because of the dielectric strength of with the breaker switching is investigated. To estimate the
SF6 in GIS which is about 3 times more than air. The VFTO magnitudes, the influence of trapped charge on the HV
application of GIS has been increasingly requested by utilities bus have to be taken into consideration. Therefore the
due to its numerous excellences, such as large miniaturizing variations of VFTO peak with different magnitudes of trapped
effects and good environmental adaptability [15], [16]. In spite charges have been studied. In addition, the impacts of several
of all specific advantages, the GIS system suffers with some of methods of suppressing such as damping resistor, ferrite Rings
the issues such as very fast transient over-voltages (VFTO). and Nanocrystalline ring on amplitude of VFTOs have been
These transients are engendered within a GIS as the result of discussed.
switching operation (opening or closing) of a disconnector
switch [2], operation of circuit breaker, closing of grounding II. ORIGIN OF VFTO IN GIS
switch, or the occurrence of the fault. The contacts of a VFTOs are generated in a GIS during disconnector or
disconnector switch move slowly during opening and closing breaker switching operations, or by line-to-ground faults. In
operations. While the dielectric strength between the contacts the switching operation in GIS, when the switch closes, the

150

Article History:
JICE DOI: 649123/10.112576, Received Date: 23 Mar. 2016,
Accepted Date: 15 Jun. 2016, Available Online: 15 Jul. 2016
S. Rahmani et al. / Vol. 2(4), Jul. 2016, pp. 150-156 JICE DOI: 649123/10.112576

distance between two contacts reduces and the electric field maintenance, when closing or opening disconnector switch or
between them will rise until sparking occurs. The first breaker in one phase, other phases cannot sense the transient
reignition of arc occurs when the voltage across contacts wave. Thus, the three phases can be put into a single bus bar
overreach the breakdown voltage of the gas insulation. The or separate bus bars.
first strike occurs inescapably at the crest of the power
frequency voltage, due to the slow operating speed. Modeling of GIS is accomplished by utilizing electrical
Thereafter, current flow through the spark and charge the equivalent circuits put together by lumped elements and
capacitive load to the source voltage and the potential delineated by surge impedances and travelling times. The
difference across the contacts falls and the spark will quality of simulation depends upon surge impedance and
eventually quench. When switch closes, the highest amplitude travelling times, and also on quality of the model of each
of voltage oscillation happens at the first arc reignition: separate GIS component.
The typical length of a GIS bus is much smaller than a
U1 = 2
3 Vn (1) conventional substation and since the VFTO is like a
travelling wave of particular velocity with reflections and
Where U1 is the voltage amplitude at the first arc refractions, the bus bar can be represented by a constant
reignition; Vn is rated voltage of the power system [8]. parameter line with velocity v and surge impedance Z [7]. The
inductance and capacitance of a co-axial single phase in GIS
When switch opens, the behavior is a complete reversal of
bus is given by:
the closing operation. In this case, the highest amplitude of
voltage oscillation appears at the last arc reignition:

1 µ b
U2 = 2
Vn (1 + exp(− ) (2) L= ln( ) (4)
3
2τf 2π a
Where U2 is the voltage amplitude at the last arc 2π ∈
reignition and f is frequency of the power source and τ is the C=
b (5)
leakage time constant of the electric charge in bus, which is ln( )
determined by the bus capacitor and leakage resistance [8]. a
The rise time of the over-voltage resulting from strike
L
depends on the field strength of the gap and is thus a function Z= (6)
of the field utilization factor, h, the insulation medium given C
by the breakdown field strength (E/P)0 and the gas pressure p.
The rise time can be obtained by: Finally, the surge impedance is given by:
b
t r = 13.3
kt
(3) Z = 60 ln( ) (7)
E a
( ) 0 ph
p Where, ‘a’ is the diameter of the HV bus and ‘b’ is the
inner diameter of the enclosure and C is capacitance, L in
The Toepler spark constant is kT=50kV/ns cm. Rise time inductance. According to IEC 62271-4 velocity is 0.95 of
can be estimated in rage of nanoseconds due to the high field speed of light diameter of the enclosure.
of strength of the SF6 of (E/P)0=860kV/cm and the GIS gas
pressure of up to 0.5 MPa [1], [8]. The spark is modeled as an exponentially decaying
resistance (R0e-(t/T)) in series with small resistance (r=0.5Ω) to
III. MODELING OF GIS COMPONENTS FOR VFTO STUDY take care of the residual spark resistance [7]. This is
In spite of all furtherance in electrical measurement implemented using the time varying resistance in EMTP-RV.
techniques and equipment, quantifying the VFTO at such high The time varying resistance is given by this equation:
frequencies (a few MHz) is still challenging. The best way to
measure the quantity of the VFTO is to investigate switching R(t)=R0e-(t/T)+r (8)
operation in GIS; however it can cause irreparable financial
damages to the system. Thus, actual measurement in the GIS R0 is taken 106 M Ω and T is 1ns. The above equation
during operation is not feasible. Consequently, modeling gives a resistance whose value varies from very high value (M
techniques and appropriate assumptions can provide Ω) to low value of 0.5 Ω within 30 ns [7].
reasonable accurate predictions of the VFTO magnitudes and
frequencies and their rate of rise [5], [19-24]. The electrical equivalent circuits for different GIS components
are tabulated in Table I [29].
Since VFTO contains substantially high frequency
components ranging from hundreds of kHz to tens of MHz,
most of the components have their capacitances dominating
the other parameters [25]. Owing to VFTO’s short time

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S. Rahmani et al. / Vol. 2(4), Jul. 2016, pp. 150-156 JICE DOI: 649123/10.112576

TABLE I. ELECTRICAL EQUIVALENT CIRCUITS FOR GIS COMPONENTS IV. SIMULATIONS AND DISCUSSIONS
FOR REPRESENTATION OF VFT
The approach is applied to a 400-kV GIS as shown in Fig.
Components
Models 1 which is a single-line diagram of a GIS. The mentioned GIS
Equivalent circuits Notes contain four lines. Two generators are placed in LINE 3 and 4.
Spacer C=15 pF
The incoming line of the GIS is comprised of an overhead line
of 5-km length, an XLPE cable of 8-km length, PT, CT,
Open End C=15 pF lightning arrester (LA), earth switch (ES), disconnector switch
(DS), circuit breaker (CB), etc. The XLPE cable and
transformers locations are assumed as source side and as load
C=1.4 nF
Power Z=12.1 Ohm side, respectively.
Trans L=20.9 mH Estimation of VFTO is carried out using EMTP-RV for
C=0.75 nF
various switching conditions. The variation in VFTO peak
along the GIS bus nodes for disconnector and circuit breaker
Bushing C=150 pF
switching operations is investigated; in the first condition,
ES C=45 pF CB3 operate and in the next condition, DS4 operate when CB3
is kept open, respectively (See Fig. 1).
LA C=200 pF

SA C=50 pF

C=50 pF
CT
Z=70 Ohm

XLPE Z=30 Ohm

Cable V=150 m/µs

In the closed position:

In the closed position:
C=30 pF
Z=70 Ohm
DS
In the open position: In the open position:
C=50 pF

In the closed position: Fig. 1. Single-line diagram of a Gas Insulated Substation [31].
In the closed position:
C=30 pF The Scenarios in simulations are as follows:
Z=46 Ohm
CB 1) CB3 operates( CB3 is closing after 0.4µs) in 400kV GIS
2) DS4 operates when CB3 is open in 400 kV GIS
In the open position: In the open position:
C=50 pF
The VFTO waveforms for the disconnector and circuit
breaker switching conditions in LL1, LL2, LL3, LL4 and LL5
R=R0 e-t/Ƽ+r are shown in Figs. 2 and 3. The nearest node to the switching
r=0.5 Ohm point in the case of disconnector switch operation is node LL4
Spark
R0=106 Ohm and in the case of circuit breaker operation the closest node to
T=1 ns
the switching point is LL2.
C=25 pF It has been observed that the VFTO waveform has steeper
Cross
Z=35 Ohm
Junction
L=450 mH
front and correspondingly, higher frequencies as compared to
other farther observation points in the GIS. As it is displayed
in Fig. 2, node LL2 has higher frequency as compare to the
PT C=100 pF other nodes. Likewise in Fig. 3, node LL4 has the same
specialty.
In the case of circuit breaker operation, VFTO peak is
found to be highest in node LL1 (at the end of the line). Its

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S. Rahmani et al. / Vol. 2(4), Jul. 2016, pp. 150-156 JICE DOI: 649123/10.112576

value is 1.83pu just as it is shown in Fig. 4-a. According to

Fig.4-b in the case of disconnector switch operation, VFTO
peak in found to be highest in node LL4; near to the switching
point. The value of VFTO peak magnitude in this node is
1.16p.u.
It is investigated that the VFTO peak magnitudes are
higher close to the switching point when disconnector switch
operates, where as in the case of circuit breaker operation,
VFTO peak magnitudes are higher at the end of the GIS and
near the junction of GIS and overhead line. In addition, with
comparison between VFTO levels of circuit breaker operation

Fig. 5. Comparison of Variation of VFTO levels for DS operation and CB

operation

and disconnector switch operation, it is detected that a higher

VFTO magnitudes occur in the case of circuit breaker
switching operation. Correspondingly, in Fig. 5, it can be
observed that a distinct signature pattern of the VFTO peak
magnitude variation for disconnector switching operation as
opposed to the circuit breaker switching operation is occurred.

Fig. 2. Analysis of VFTO waveform for switching condition 1 in LINE1 B. Influence of Trapped Charge on GIS
The trapped charge remaining on load side of the
disconnector must be taken into consideration, for the
estimation of the VFTO stress. The trapped charge left on a
floating section of switchgear depends on the disconnector
switch construction [2]. In the case of high speed
disconnectors, the maximum trapped charge could be as high
as 1.0pu or even 1.2pu in the worst case [26], [27].
The variation of the VFTO magnitudes for 0.3p.u, 1p.u and
1.2p.u of trapped charge is investigated in order to understand
the exact influence of the trapped charge on the VFTO levels
in GIS. The conditions considered are:
1) DS4 operates when CB3 is open with 0.3 pu trapped charge
Fig. 3. Analysis of VFTO waveform for switching condition 2 in LINE1
2) DS4 operates when CB3 is open with 1 pu trapped charge
3) DS4 operates when CB3 is open with 1.2 pu trapped charge

Fig. 4. VFTO waveform for switching a) condition 1 at node LL1

Fig. 6. Variation of VFTO levels for DS4 operation when CB3 is open with
b) condition 2 at node LL4 0.3 p.u.,1 p.u. and 1.2 p.u. Trapped Charge

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It is concluded that when the trapped charge on the line The very high intensity of the magnetic field around the
increases, there is an increase in the VFTO peak magnitudes. conductor causes the ferrite material to go to a completely
But this increase is not proportional to the increase in the saturation in this high magnetic field. The aftereffect of this
trapped charge magnitudes. As well the effect of trapped saturation is damping effect reduction. It is possible to
charge on VFTO peak magnitudes is higher in the line where increase the magnetic field strength by layering of ferrite
the switching is done and specifically, at the nodes in the line rings, but this can cause reduction in effective permeability.
where the switching operation is done (LL4 is the nearest node Therefore, the damping effectiveness of the whole ring
to the switching point). The variation of VFTO peak arrangement decreases. Consequently, the damping effect of
ferrite rings inside the GIS for HV applications is limited
magnitudes for different trapped charges is demonstrated in
which is a malfunction of ferrite rings. Equivalent ferrite ring
Fig. 6.
model is shown in Fig. 8. The value of R is 100Ω and L is
2mH.
C. Suppression Methods
The effect of the Ferrite Rings on VFTO waveform when
Different methods are available to suppress the VFTO DS4 operate and CB3 is kept open in 230kV GIS at Node LL3
magnitudes. Mitigation VFTO by integration of a damping is shown in Fig. 10-c and the value of VFTO peak in this case
resistor and either by using Ferrite rings which are arranged is 1.04p.u. It is observed that the VFTO peak decreases more
around the inner conductor of the GIS are well proven in compare to when damping resistor used in order to mitigate
technology [2], [28]. Third method of damping is by using the VFTO magnitude.
Nanocrystalline rings which is a new method for mitigation of
VFTO magnitudes.
In these cases, it is assumed that the substation is a 230kV
GIS which is considered to estimate and compare suppression
methods. Single-line diagram of GIS is demonstrated in Fig. 1.
VFTO waveform when DS4 operated and CB3 is kept open in
Fig. 8. Equivalent Ferrite Ring model
GIS without any mitigation methods at node LL3 is shown in
Fig. 10-a whereas the VFTO peak in this condition is 1.232pu.
3) DS4 operates when CB3 is open with Nanocristalline
Accomplished investigations are as follows: Rings in a 230 kV GIS
1) DS4 operates when CB3 is open with Damping Resistor
Like the ferrite rings, these rings are arranged around the
in a 230 kV GIS inner conductor of the GIS. Experiments were accomplished
According to the maximum calculated VFTO and the by ABB Switzerland with different ring types, different sizes
necessitate mitigation effect; the resistance of the damping and different numbers of rings [30].
resistor could be delineated. By increasing the resistance,
VFTO magnitude can mitigate, but the dimension of the Fig.13 displays the equivalent Nanocrystalline rings model
disconnector increases. Besides the energy absorption and the for simulation where the values of R, L and C have been
branching behavior must be taken into consideration. A selected in order to make better suppression results. Therefore,
flashover across the resistor may lead to a VFTO with the value of R is 150Ω and L is 0.002mH and C is 1pF
comparatively higher amplitude as compared to a DS without [29],[30].
such a damping resistor. Therefore it is required to overcome
The effect of the Nanocristalline rings on VFTO waveform
the drawback of such cumbersome designs by using other
when DS4 operate and CB3 is kept open in 230kV GIS at
internal damping measures. Fig.7 displays the equivalent
Node LL3 is shown in Fig. 10-d and the value of VFTO in this
circuit for damping resistor for simulation which its value
case is 1.022pu. It is observed that the VFTO peak decreases
based on previous research is 100Ω [29].
more in compare to when damping resistor or ferrite rings
The effect of using damping resistor on the VFTO used in order to mitigate the VFTO magnitude.
waveform when DS4 operate and CB3 is kept open in 230kV
GIS at Node LL3 is demonstrated in Fig. 10-b. It is observed
that by using Damping Resistor, VFTO peak decreases to
1.065p.u. Furthermore, fewer level of VFTO magnitude is
obtained by using damping resistor.
Fig. 9. Equivalent Nanocristalline Ring model

The comparison of different suppression methods and the

VFTO magnitude in pu is given in Table.II.
Fig. 7. Equivalent Damping resistor model It has been observed in Fig. 10-a that VFTO peak
magnitude is 1.232p.u when DS4 operate and CB3 is kept
2) DS4 operates when CB3 is open with Ferrite Rings in a open in 230kV GIS. Afterwards, the damping resistor of 100Ω
230 kV GIS is included in the switching operation of the disconnector and

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it has been observed in Fig. 10-b that VFTO levels reduced to Fig. 10. VFTO waveform when DS4 operate and CB3 is kept open in 230kV
1.065p.u. In addition lesser values of oscillation frequency GIS at Node LL3. a)without any suppression methods b) with Damping
Resistor c) with Ferrite Rings d) LL3 with Nanocristalline Rings
occurred in the case of using damping resistor. Another
method of suppressing VFTO’s have been carried out by because of the saturation of Ferrite material, damping effect of
modeling the ferrite rings and it has been obtained that the ferrite rings inside the GIS for HV applications is limited. A
steepness and maximum peak values are reduced to new method has been described by using Nanocrystalline
considerable amount of 1.04p.u and very less values of materials. It has been concluded that the third method had the
oscillation frequency demonstrated in Fig. 10-c. It was best suppression effect. Fig. 10-d shows the effect of using
correspondingly pointed that Nanocrystalline rings.
The comparison of Variation of VFTO levels with
different suppression methods is shown in Fig. 11.

Fig. 11. Comparison of Variation of VFTO levels with different suppression

methods

TABLE II. COMRAISON OF DIFFERENT SUPPRESSION METHODS

Conditions VFTO (p.u.)

Without Suppression method 1.232

With Damping resistor 1.065

With Ferrite Rings 1.04

With Nanocristalline Rings 1.022

V. CONCLUSION
This paper investigated a general model for assessment of
VFTO in GIS using EMTP-RV. It was observed that VFTO
waveforms have steeper front and higher frequencies near the
switching points. And there is a little trace of VFTO in farther
points and other lines. In the case of circuit breaker operation,
the VFTO peak is higher at the end of the line (near the
junction of GIS with the overhead line) where the switching
occurred. Where as in the case of disconnector switch
operation VFTO peak is higher near the switching point and it
decreases along the line where the switching has been done.
Correspondingly, higher VFTO magnitudes occur in the case
of circuit breaker operation as compared to disconnector
switch operation. Besides, it has been observed that in
comparison between the case of circuit breaker operation and
disconnector switch operation, a distinct pattern of variation of
VFTO peak along the nodes occur. The increase in the trapped
charge on load side of the disconnector, causes augmentation

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S. Rahmani et al. / Vol. 2(4), Jul. 2016, pp. 150-156 JICE DOI: 649123/10.112576

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