1

Engineering Wallah Electrical Engineering

SHORT NOTES
Power Electronics
CHAPTER
Power Semiconductor Devices and Thyristors
1

Power Electronics Signal Electronics

1. High voltage rating Low voltage rating
2. High current rating Low current rating
3. High power rating Low power rating
4. Low frequency (50 Hz) High frequency
5. Transistors are operated as a switch. Transistors are mainly operated as an amplifier
Transistors are operated in cut-off and i.e. transistors are mostly operated in active
saturation region only. region.

Different Modes of Operation of a Switch

1. Forward Blocking Mode

2. Forward Conduction Mode
3. Reverse Blocking Mode
4. Reverse Conduction Mode

Ideal
 Practical

Note : Triac and Diac supports all the four modes of operation as a switch.
Triac is used in fan regulator.
 2

Power Diode
There are 3 layers in a power diode
 p+, n–, n+
Concentration of p layer  1017 cm–3
p+  1019 cm–3
p–  1013 cm–3
n+  1019 cm–3
n–  1013 cm–3
+  Heavily doped
–  Lightly doped
Concentration of intrinsic layer  1.5  1010 cm–3

I-V Characteristics of Power Diode

 Reverse voltage blocking capability

5.6 kV  up 10 kV

 Current handling capability

5.6 kA

 Operating frequency
Up to 1 kHz

Reverse Recovery Characteristics of Power Diode

It explains the switching behaviour of a diode from ON state to OFF state.

1 2 di
 QR  trr
2 dt

2QR 2QR
2
trr   trr 
(di / dt ) (di / dt )
 3

General Purpose Diode Fast recovery Diode Schottky Diode

1. trr = 25 s trr < 5 s trr = nano sec

2. Voltage rating up to 5 kV  10 kV Up to 3 kV Up to 100 V

Current Rating up to several thousand
3. Up to thousands Amp Up to 300 A
Amp
Application - Line frequency In chopper & Inverter
4. In SMPS
Rectifier commutation circuit
5. P-n Diode P-n Diode Al Si Type

Power BJT
IC
1.   I C  I B  (50 to 200)
IB

IC
2.   IC  I E    1 (slghtly)
IE

# Relation between  and  :

1 1 
I E  IC  I B   1  
  1 
I E IC I B 1  1
    
IC IC IC  

1 1
 1
 
1 1 

 


1 

Switching Characteristics of Power BJT

VCC  ICS  t2 
Pon   t  
ton  ton 
VCC  ICS
 ( Pon )max 
4
 4

During turn-off

VCC  ICS  t2 
P  t  
toff  toff 
VCC  I CS
( Poff )max 
4
VCC  I CS
E  ton  During turn-on
6
VCC  ICS
Eoff   toff  During off
6
VCC  I CS
( Pavg )on   ton  f
6
VCC  I CS
( Pavg )off   toff  f
6

Safe Operating Area of Power BJT

Power BJT Power MOSFET IGBT

1. Bipolar device Unipolar device Bipolar device
Current or charge controlled Voltage controlled device Voltage controlled device
2.
device
Low input impedance (k) High input impedance (109 ) High input impedance
3.
(disadvantage)
–ve temp. coefficient of +ve temp. coefficient of +ve temp. coefficient of R
4.
resistance resistance
5. Parallel operation not possible Parallel operation is possible Parallel operation is possible

6. Secondary breakdown No secondary breakdown No secondary breakdown

7. Frequency  10 kHz Frequency  1 MHz Frequency  50 kHz

8. 1200 V, 800 A 500 V, 150 A 1200 V, 500 A

 5

9. Higher switching loss Low switching loss Low switching loss

10. Low forward voltage drop High forward voltage drop Low forward voltage drop
Low on state power loss (low High on state power loss Low on state power loss
11.
conduction loss)
High power application High frequency application  Inverters & chopper
12.
Inverters & chopper, SMPS

SCR

I-V Characteristics of SCR

# Latching current (IL)

 It is related to turn-on process of SCR.
 The moment SCR is turned on the curve suddenly shift towards imaginary axis and the value of anode
current at that moment is called latching current (IL).

# Holding current (IL)

 It is related to turn-off process of SCR.
 It is the minimum value of anode current below which thyristor gets turned off.

Triggering Methods of SCR

 The process of turning on the SCR is called triggering or Firing of SCR.

# Different Triggering Methods of SCR :

(1) Forward Voltage Triggering
(2) Gate Triggering
dV
(3) Triggering
dt
(4) Temperature or Thermal Triggering
(5) Ligth Triggering or Radiation Triggering
 6

# Different Firing Circuits of SCR :

(1) Resistance Firing Circuit
(2) RC Firing Circuit
(3) Synchronized UJT Firing Circuit
[# The major drawback of resistance Firing Circuit and RC Firing Circuit is that, it is directly connected to
main power circuit. It is not isolated from that.]
 We don’t get high frequency carrier pulse from these circuits. Hence, these two firing circuits are not used to
trigger an SCR.
UJT
Vp  VBB  VP

RB1

RB1  RB 2

 1  0.51 to 0.82

Behaviour of LC Circuit
1
V LC
I0  s  2
 LC
C
2  1 
L s   LC 

1
C LC
I 0 ( s )  Vs  2
2  1 
L
s  
 LC 

C
I 0 (s)  Vs sin 0t
L
1
Where 0 
LC

C
I 0  I p sin 0t , I p  Vs
L

Commutation of Thyristors
# There are mainly two types of commutation
(1) Natural commutation
(2) Force commutation

 When nature of supply supports commutation then it is called natural commutation or line commutation (Class F
commutation). Ex. : Phase Controlled Rectifier, AC voltage controllers, step-down cycloconverters.
 7

# Forced Commutation
 When nature of supply does not supports commutation the external circuits or arrangements are required to
commutate the thyristors. Such type of commutation is called forced commutation. Ex. : Inverters, chopper, step-
up cycloconverters.
# Types of commutation
(1) Class A commutation
(2) Class B commutation
(3) Class C commutation
(4) Class D commutation
(5) Class E commutation
(6) Class F commutation
Note : Class F commutation is nothing but natural or line commutation only.

Thyristor protection:
di/dt (Inductor)
CB FACLF

RS Voltage
R2 snubber
circuit
Varistor
CS
R1 C1
zener-diode

Series and Parallel Connection

 SCR’s are connected in series for high-voltage applications.
 SCR’s are connected in parallel for high current applications.
 String efficiency measures “degree of utilization” of SCR’s in a string and is given by
Actual voltage / Current of wholestring

number of SCR's× Individual voltage / Current ratingof SCR
 DRF (Derating factor) gives reliability of string.
DRF = 1– 
DIAC (Diode for Alternating Current)
 8

TRIAC (Triode for Alternating Current)

RCT (Reverse Conducting Thyristor)

GTO (Gate Turn off Thyristor)

 It is a three terminal, fully controlled device. It can be turned off by applying negative gate pulse.
 Its latching and holding currents are high.
 On state voltage drop and associated losses are high.
 It requires high gate current, so associated gate power losses are high.




 9


CHAPTER
Rectifier
2

Performance Parameter

Input parameter:
I s1
 Distortion factor , g 
I sr
 Displacement angle is angle between sinusoidal voltage & fundamental component (FC) of current ()
 Displacement factor, DF = cos
Active power vsr I s1 cos  I s1
 Input power factor = =  cos 
VA vsr I sr I sr
IPF = g × DF.
1
 Current Harmonic Factor/Total Harmonic Distortion = 1
g2

Output Parameter:
 D.C output power, VoIo

 A.C output power, Vor Ior

Pac Vor I or
 Rectification efficiency,   
Pdc Vo I o

vor
 Form factor ( FF )  (for voltage)
vo

 Voltage ripple factor , VRF  FF 2  1

2
I 
 Current ripple factor , CRF   or   1
 Io 

Pdc
 Transformer utilization factor , TUF 
VA Rating of transformer

 Same frequency component creates active & reactive power.

Single Phase Half Wave Rectifier

(1) R Load :
Vm
 Average o/p voltage, Vo  (1  cos )
2
 10

Vm
 Average o/p current , I o  (1  cos )
2R
1/2
Vm  sin 2 
 RMS o/p voltage , Vor   (   ) 
2  2 

Vor
 RMS o/p current , I or 
R
Vor2
 Output power, P  . (always use RMS voltage to find out power in R load)
R
1/2
V 1  sin 2 
 Power factor  or   (  2) 
Vo 2  2 

 tc = 
Vm V
 For diode rectifier, Vo  ,Vor  m
 2
(2) R-L Load :
Vm
 Average o/p voltage , Vo  [cos   cos ]
2
 = extinction angle, (     2   )
Vo
 Average o/p current , I o 
R
1/2
Vm  1 
 RMS o/p voltage, Vor   (  )  (sin 2  sin 2) 
2  2 
 o/p power , Po  Vo Io

 tc = (   )

(3) RL Load with Freewheeling Diode:

Vm
 Average o/p voltage, Vo  (1  cos )
2
Vo
 Average o/p current, I o 
R
1/2
Vm  sin 2 
 RMS o/p voltage , Vor   (   ) 
2  2 

 tc = 
Advantages of using freewheeling diode:
(I) The input power factor is improved.
(II) The average o/p voltage is increased.
(III) The chances of continuous current increases.
(IV) The average o/p power is increased.
 11

(4) RE Load
E
 1  sin 1 2  (  1 )
Vm
1    2
 Average output voltage,
Vm
Vo  (cos   cos 2 )  E (2    2 )
2

(5) RLE Load

E
 1  sin 1 2  (  1 )
Vm
1    2
PIV = (E + Vm)
tc = (2 + 1 – )
 Average output voltage,
Vm
Vo  (cos   cos )  E (2    )
2

1- Full Wave Rectifier

(1) For R Load :

Vm
 Average o/p voltage, Vo  (1  cos )

V
 Average o/p current, I o  o
R
1/2
Vm  sin 2 
 RMS o/p voltage, Vor   (   ) 
2  2 
 tc = 

(2) For RL/RLE load (Cont. Conduction)

2Vm
 Average o/p voltage, Vo  cos 

Vo
 Average o/p current (as a rectifier), Io  (RL load)
R
Vo  E
Io  (RLE load)
R
 RMS output voltage Vor  Vs

 tc = ( – )
 PIV = 2Vm (for midpoint converter)
= Vm (for bridge converter)
 12

(3) For RL load with freewheeling diode:

Vm
 Average o/p voltage, Vo  (1  cos )

sin 2 
1/ 2
Vm 
 RMS o/p voltage, Vor  (  ) 
2  2 
Performance parameter of full converter for RL/RLE Load Continuous Conduction

4I o
 Instantaneous value of supply current, is (t )  
n 1,2,3 n
sin n(t  )

2 2
 RMS value of fundamental component of supply current , I s1  Io


 Displacement factor, DF = cos

2 2
 Distortion factor, g 


 THD/CHF = 0.4834 = 48.34%

(4) Full Converter with RE Load

1
 Average o/p voltage, Vo  Vm (cos   cos 2 )  E (    2 )

1
 Average charging current, I o  (Vm (cos   cos 2 )  E (2  )
R

Single Phase Semi Converter

Vm
 Average o/p voltage, Vo  (1  cos )

1/2
V  sin 2 
 RMS o/p voltage, Vo  m (  ) 
2  2 

Performance Parameter with Continuous Conduction

(  )
 Average current of Thyristor, IT  I o
2

 RMS current of Thyristor, ITr  I o
2


 RMS value of supply current, I sr  I o


 Average current of freewheeling diode, I FD  I o  

 13


 RMS value of freewheeling diode, I FDr  I o


4Io  n   
Is  
n 1,3,5 n
cos 
 2 
 sin n  t  
 2
2 2 
 RMS value of fundamental component of supply current , I s1  cos
 2

I s1 2 2 cos 2
 Distortion factor , g  
I sr (  )

3- Rectifier

3- Half Wave Rectifier :

(1) For R load  < 30/RL & RLE load for any  (cont. conduction)
3Vml
 Output voltage, V0  cos 
2
1/2
1 3 
 RMS o/p voltage , Vor  Vml   cos 2 
 6 8 
 Peak inverse voltage = Vml

(2) For R load > 30/RL & RLE load with FD (> 30)
3Vmp
 Vo  [1  cos(  30)]
2
1/ 2
V  5  1   
 RMS o.p voltage Vor  ml      sin  2   
2   6  2  3 
  PIV  Vml

3 Phase Full Converter (Six Pulse Converter)

 < 60 for R load / RL & RLE load for any  cont. Conduction:
3Vml
 Average o/p voltage, Vo  cos 

1/2
3  1     4   
RMS voltage, Vor  Vml   sin  2    sin  2    
2  3 2   3  3  
or
1/2
3  3 
Vor  Vml   cos 2 
2  3 2 

Performance Parameter :

4I o  n 
Is   sin   sin n(wt  )
6 k 1 n  3 
 14

6
 RMS value of fundamental component of supply current, I s1  Io

 Displacement factor, DF = cos
3
 Distortion factor , g 

3
 Input power factor, P.F  cos 

1
 THD   1  0.31  31%
g2

(2) For  > 60 for R Load:

3Vml
Vo  [1  cos(  60)]


3- Semi Converter

 If  < 60, it works as a 6 pulse converter
 If   60 , it works as a 3 pulse converter
3Vml
 Average o/p voltage Vo  (1  cos )
2
 PIV = Vml
Effect of Source Inductance
 One pulse converter/(1) half wave
Vml
Io  cos   cos(  )
Ls
Vml
Vo  (1  cos )  f Ls I o
2
 During overlapping period, SCR and FD both conducts simultaneously.




 15


CHAPTER
Chopper
3

Step down/Class A Chopper
 Pulse width = TON
TON
 Duty cycle,  
T
 TON  T & TOFF  (1  )T
 Average o/p voltage, Vo  Vs
or
Vo  (Vs  VT )
Where VT = voltage drop across switch

RL/RLE Load Continuous Conduction


2vs
 vo (t )  vs   sin n sin(nwt  n )
n 1 n

 cos n 
n  tan 1  
 sin n 

To reduce nth harmonic ,    

1

 n
1
 VRF  FF 2  1  1


Step up Chopper
 Pulse width = TOFF
Vs
 Average o/p voltage Vo 
1 


 16


CHAPTER
Inverter
4

Single Phase Half Bridge Inverter
Vs
 RMS output voltage =
2

2Vs
 Fourier Series =  sin nt
n  1, 3, 5 n

 RMS of Fundamental Voltage

2Vs
Vo1 =

Vo1 2 2
 Distortion factor, g = 
Vor 

1
 THD = – 1 = 0.4834.
g2
Single Phase Full Bridge Inverter
 RMS O/P voltage, Vor = Vs
 Fourier series

4Vs
Vo(t) =  sin n t
n 1,3,5... n 

2 2 Vs
 RMS value of fundamental component =

2 2
 g and THD = 48.34%

Phase Inverter (180° Mode)
2 / 3 2
VLr = Vs   Vs
 3
VLr 2
VPhr   Vs
3 3
Vphr 2Vs
Iphr = 
R 3R
2Vs
ILr = Iphr 
3R
2
3Vph 2 Vs 2 2 Vs 2
P=3 I2ph R =  3. 
R g R 3 R
 Fourier series of line voltage
n
4Vs n n  
VL(t)   sin sin sin n  t  
6k 1 n 2 3  6
 17

Fundament component of line voltage

4Vs 3
.1.
VLI   2  6V
s
2 
VL 2Vs
Fundament component of phase voltage, Vph1  1 
3 
3 phase Inverter (120° Mode)
 Each SCR conducts only for 120°.
Vs 2/3 Vs
Vphr   
2  6
V V
VLr  3  s  s
6 2
Vphr V
Iphr   s
R R 6
V
ILr  Iphr  s
R 6
Vs 2 Vs 2
P  3I2phr R  3 R 
R26 2R
Fourier series of phase voltage
n
2Vs n n    
Vph (T)   sin sin sin  n  t   
(a) 61 n 2 3   6 
Fourier Component of phase voltage
2Vs  2Vs 3

.sin .
  2 
3 3 Vs
Vph1 
2 2 2 
Vph1 3 Vs 1
Iph1   .
R 2  R
Fundamental component of power , P1  Iph
2
1
R
3 Vs
Fundamental component of line voltage, VL1  3 Vph1 
2 
Voltage and Frequency Control in Inverter

Internal Control of Voltage

Single Pulse Width Modulation:

4Vs n
V0(t)   sin sin ndsin nt
n 1,3,5 n 2
2d
Vor  Vs

2 2 Vs
Vo1  sin d

 19

CHAPTER
AC-AC Converters
5


1-ϕ half wave AC voltage controller:

RMS value of output voltage
1/2
V 1  sin 2 
Vrms  m  (2  )  
2   2 
Average value of output voltage
V
Vo  m (cos   1)
2
Full wave AC voltage controller
RMS value of output voltage for R-Load
1/2
V 1  1 
Vrms  m  (  )  sin 2 
2   2 

RMS value of output voltage for R-C Load

1/2
Vm  1 1 
Vrms   (  )  (  )  sin 2  sin 2
2  2 2 
• Integral (ON-OFF) Cycle Control:
RMS value of output voltage
Vm n  n
Vrms   Vs k  k
2 nm  nm


 