Altermagnetismo
Altermagnetismo
Ling Bai, Wanxiang Feng*, Siyuan Liu, Libor Šmejkal, Yuriy Mokrousov, Yugui Yao*
Libor Šmejkal3,4
3
Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
4
Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 162 00 Praha 6, Czech
Republic
Yuriy Mokrousov3,5
3
Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
5
Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich
and JARA, 52425 Jülich, Germany
Yugui Yao1,2
1
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum
Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology,
Beijing 100081, China
2
Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics,
Beijing Institute of Technology, Beijing 100081, China
E-mail: [email protected]
1
Recent developments have introduced a groundbreaking form of collinear magnetism known
as “altermagnetism”. This emerging magnetic phase is characterized by robust time-reversal
symmetry breaking, antiparallel magnetic order, and alternating spin-splitting band structures,
yet it exhibits vanishing net magnetization constrained by symmetry. Altermagnetism uniquely
integrates traits previously considered mutually exclusive to conventional collinear
ferromagnetism and antiferromagnetism, thereby facilitating phenomena and functionalities
previously not achievable within these traditional categories of magnetism. Initially proposed
theoretically, the existence of the altermagnetic phase has since been corroborated by a range
of experimental studies, which have confirmed its unique properties and potential for
applications. This review explores the rapidly expanding research on altermagnets,
emphasizing the novel physical phenomena they manifest, methodologies for inducing
altermagnetism, and promising altermagnetic materials. The goal of this review is to furnish
readers with a comprehensive overview of altermagnetism and to inspire further innovative
studies on altermagnetic materials which could potentially revolutionize applications in
technology and materials science.
2
1. Introduction
Magnetism, a fundamental and expansive area within condensed-matter physics, plays a
crucial role in advancing technology. Historically, this field has primarily focused on two
magnetic phases: ferromagnetism and antiferromagnetism. Ferromagnets (FMs), known for
their spin polarization that mirrors the macroscopic magnetization, facilitate a myriad of time-
reversal (𝒯) symmetry-breaking responses and have therefore been the subject of extensive
research and widespread applications.[1-4] Nevertheless, the inherent properties of FMs present
significant challenges for the performance of ferromagnetic spintronic devices, particularly
affecting their stability, scalability, and dynamic responses. These limitations render them
suboptimal for incorporation into advanced electronic systems. Specifically, the field-
sensitivity of ferromagnetic order exposes these materials to external magnetic disturbances,
substantial stray magnetic fields compromise the potential for high-density integration, and the
conventional ferromagnetic precession frequencies, typically on the order of GHz, constrain the
operational speed of these devices. In conventional antiferromagnets (AFMs), the perfectly
compensated antiparallel magnetization results in zero net magnetic moment, which confers
significant robustness against magnetic disturbances and eliminates stray magnetic fields.
Furthermore, due to antiferromagnetic exchange interactions, the precession frequencies of
AFMs can extend up to the THz range, thus opening up a new frontier in antiferromagnetic
spintronics.[5-8] However, the compensated magnetization of AFMs is often perceived as
leading to uncontrollable antiferromagnetic order, weak magnetic signal, and very intricate
magnetoelectronic responses. To overcome the limitations of collinear ferromagnetic and
antiferromagnetic materials in spintronics, scientists have been exploring new materials that
can combine the advantages of both ferromagnetism and antiferromagnetism. A new magnetic
phase—altermagnetism—has consequently emerged.
With compensated antiparallel magnetic order, altermagnetic band structure breaks 𝒯
symmetry and possesses characteristic nonrelativistic spin-splitting. Indication of
unconventional magnetism can be tracked back to reports of anomalous effects by various
research groups.[9-21] The anomalous effects have been referred to by several names, such as
crystal Hall effect,[9] AFM-induced spin splitting,[12] staggered spin-momentum interaction,[14]
unconventional magnetism and anti-Kramers nodal surfaces[15] and unconventional
antiferromagnetism and spin-splitter currents.[19, 21] Shortly after, it was recognized that these
anomalous properties[9-21] and other results[22-23] are characteristics of an unconventional
magnetic class. This unconventional magnetic class, identified by symmetries by Šmejkal and
colleagues, exhibits alternating spin polarization with d-, g-, or i-wave symmetry (as shown in
3
Figure 1) in both direct and reciprocal space; therefore, it has been aptly named as
“altermagnetism”, a term that has gained wide acceptance.[24] Although it has, by symmetry, no
net magnetization, unlike conventional antiferromagnetism, the sublattices with opposite spins
are connected by a real-space rotational transformation—either proper or improper, and either
symmorphic or non-symmorphic—rather than by translation or inversion.[24] As a result, while
altermagnets (AMs) share certain key properties with AFMs, they demonstrate even more
similarities with FMs due to the alternating spin-splitting of the bands in the absence of spin-
orbit coupling (SOC).[25] Numerous studies have investigated the nature of AMs both
theoretically and experimentally, developing a Landau theory for AMs,[26] constructing
models,[21, 24, 27-29]
and connecting altermagnetism with superconductivity, topological
phenomena and magnetic multipoles.[14, 21, 27, 30-45].
We note that there have been several comprehensive reviews covering topics such as
antiferromagnetic spintronics, anomalous Hall antiferromagnets, and the emerging field of
altermagnetism.[8, 31, 46-47] Some of these reviews were published at a time when research into
AMs was still in its early stages and predominantly theoretical,[31] while others concentrated on
specific physical properties or considered complex magnetic configurations, such as
noncollinear or noncoplanar antiferromagnetism, in which the coverage of AMs was notably
limited.[8, 46-47] Here, we focus on the recent theoretical and experimental progress in AMs,
highlighting canonical examples such as MnTe,[24, 38, 48-50] CrSb[24, 43, 51-54] and RuO2[24, 40, 55] to
offer a detailed exploration of novel physical phenomena associated with altermagnetism.
In this review, we first introduce several exotic physical phenomena manifested in AMs,
including lifted Kramers degeneracy, anomalous and spin transport properties, magneto-optical
effects and chiral magnons. Then we discuss various strategies for inducing altermagnetism
from conventional FMs and AFMs, which broaden the application scope of traditional magnetic
materials. In addition to artificial AMs, naturally occurring AMs also play a significant role;
therefore, we compile a list of potential two-dimensional (2D) and three-dimensional (3D)
altermagnetic candidates found in nature. Although our understanding of altermagnetism
remains in its nascent stages, the field has already become a rich area for theoretical exploration
and a promising avenue for the development of spintronic devices.
6
Figure 1. A) Schematic diagrams of band structures and corresponding energy iso-surfaces of
the three nonrelativistic collinear magnetic phases. B) The planar even-parity wave form of
altermagnetism. Reproduced under the terms of the CC-BY 4.0 license.[24] Copyright 2022,
The Authors, published by American Physical Society. C) Magnetic unit cell of RuO2 without
and with O atoms. Two Ru atoms with antiparallel spin magnetic moments are represented by
red and blue balls, and the nonmagnetic O atoms are depicted by gray balls. D) Magnetization
density related by fourfold crystal rotational symmetry. E) Reciprocal space Fermi surface cut
at wave vector kz = 0 calculated without spin-orbit coupling. Reproduced with permission.[37]
Copyright 2024, American Physical Society. F) Band structure of RuO2 with (black) and
without (red and blue) spin-orbit coupling. Reproduced under the terms of the CC-BY-NC 4.0
license.[9] Copyright 2020, The Authors, Published by American Association for the
Advancement of Science.
Next, we use the most investigated altermagnetic candidate RuO2 as a case study to
specifically illustrate the d-wave anisotropic spin-momentum locking observed in its band
structure. Although the magnetic ground state of single crystalline RuO2 remains
controversial,[65-68] assuming hypothetical altermagnetic order for RuO2 is justifiable, given our
primary interest in exploring the interplay between altermagnetism and band structure. As
shown in Figure 1C,[37] crystals composed solely of the magnetic atom Ru possess [𝒞$ ||𝜏]
symmetry, and thus belong to the category of conventional collinear AFMs (left panel). The
7
arrangement of the nonmagnetic oxygen atoms leads to the breaking of this symmetry, resulting
in altermagnetic order (right panel). Therefore, the positioning of nonmagnetic atoms
significantly influences the magnetic phase of a material. The spin-space group of RuO2
incorporates the following symmetry operations
[𝐸||𝐻] + [𝒞$ ||𝐴𝐻] (1)
where 𝐻 and 𝐴𝐻 respectively contains 𝐸, 𝒫, 𝒞$% , 𝒞$[''(] , 𝒞$['*'(] , ℳ% , ℳ[''(] , ℳ['*'(] and
±
𝜏𝒞$+ , 𝒞$, , ±𝒞-% , ℳ+ , ℳ, , and 𝜏 is half a unit cell translation. We note that [𝐸||𝐻] are
transformations that interchange atoms within only one of the two spin sublattices. These
symmetries are crucial in determining the characteristic anisotropy of the spin density on the
opposite-spin sublattices (Figure 1D).[37] [𝒞$ ||𝐴𝐻] comprises symmetries that interchange
atoms between opposite-spin sublattices and guarantees zero net magnetization. It is noted that
𝐴𝐻 does not contain 𝒫, indicating the broken 𝒯 symmetry in the band structure, i.e., 𝐸(𝑘, 𝑠) ≠
𝐸(−𝑘, −𝑠). Moreover, for momentum whose little group does not contain 𝐴𝐻 elements, such
as Γ − 𝑆 path (Figure 1F), the spin-up and spin-down bands are nondegenerate, i.e., 𝐸(𝑘, 𝑠) ≠
𝐸(𝑘, −𝑠).[9] The magnitude of the spin splitting can reach up to eV scale, comparable to that
observed in FMs and even larger than that induced by relativistic SOC.[31, 49, 55] [𝒞$ ||ℳ+ ] and
[𝒞$ ||ℳ, ] (disregarding translational symmetry for simplicity) respectively transform 𝐸(𝑘, 𝑠)
as [𝒞$ ||ℳ+ ]𝐸(𝑘+ , 𝑘, , 𝑘% , 𝑠) = 𝐸(−𝑘+ , 𝑘, , 𝑘% , −𝑠) and [𝒞$ ||ℳ, ]𝐸(𝑘+ , 𝑘, , 𝑘% , 𝑠) =
𝐸;𝑘+ , −𝑘, , 𝑘% , −𝑠<. These two transformations enforce the spin degeneracy on the 𝑘+ = 0, 𝜋
/ /
and 𝑘, = 0, 𝜋 planes. In addition, [𝒞$ ||𝒞-% ] transforms 𝐸(𝑘, 𝑠) as [𝒞$ ||𝒞-% ] 𝐸(𝑘+ , 𝑘, , 𝑘% , 𝑠) =
𝐸;𝑘, , −𝑘+ , 𝑘% , −𝑠<. This transformation makes the spin splitting of bands alternate across two
perpendicular wave vectors in the 𝑘% plane. These symmetries collectively lead to a planar d-
wave spin-momentum locking band structure of RuO2, as shown in Figure 1E.[37]
In Figure 2A-C, we present the ab initio nonrelativistic band structures of other AMs,such
as metallic FeSb2[15], organic κ-(BEDT-TTF)2Cu[N(CN)]Cl (abbreviated as κ-Cl), and
insulating RuF4[69], which also illustrate that altermagnetic spin splitting is strongly momentum
dependent and the sign of splitting is alternating across the Brillouin zone. Figure 2D illustrate
the average energy splitting between opposite-spin bands across a broad pool of altermagnetic
candidates, with different color sectors corresponding to different magnetic atoms.[70] We
observe that no specific magnetic atoms can be identified consistently as producing particularly
sizable spin splitting, and in AMs composed solely of light elements, significant band splitting
also occurs.
8
Figure 2. A) Top view of the spin-polarized Fermi surface of FeSb2. Reproduced under the
terms of the PNAS License.[15]Copyright 2019, The Authors, Published by PNAS. B)
Nonrelativistic κ-Cl band structure. Reproduced under the terms of the CC-BY 4.0 license.[71]
Copyright 2019, The Authors, Published by Springer Nature. C) Nonrelativistic RuF4 band
structure. The inset indicates the spin splitting energies of the two highest occupied energy
bands (V1/2) and lowest unoccupied energy bands (C1/2). Reproduced under the terms of the
CC-BY 4.0 license.[69] Copyright 2024, The Authors, Published by arXiv. D) The average
energy splitting between opposite-spin bands across a broad pool of altermagnetic candidates.
Reproduced with permission.[70] Copyright 2023, Elsevier.
Figure 3. A) Left panel: Calculated 3D Fermi surface and Fermi surface cut for RuO2. Right
panel: Experimental Fermi energy intensity distribution and the same Fermi surface cut for
RuO2. Reproduced under the terms of the CC-BY 4.0 license.[55] Copyright 2024, The Authors,
Published by American Association for the Advancement of Science. B) Measured angular-
resolved photoelectron spectroscopy (ARPES) band dispersion at 𝑘% = 0.35 Å0' along the ΓC −
E path and corresponding spin-resolved APRES simulation for α-MnTe. Blue and red colors
𝑀
10
indicate spin polarization. Reproduced under the terms of the CC-BY 4.0 license.[38] Copyright
2024, The Authors, Published by Springer Nature. C) The spin integrated soft X-ray angular-
resolved photoelectron spectroscopy (SX-ARPES) intensity, along with the superimposed spin-
resolved band structure, is shown for CrSb along the high-symmetry P-Q path using both p-
polarized and s-polarized photons. Reproduced under the terms of the CC-BY 4.0 license.[43]
Copyright 2024, The Authors, Published by Springer Nature.
The spin splitting of altermagnetic bands makes it possible to realize numerous spin-
dependent phenomena, such as anomalous Hall effect, magneto-optical Kerr effect,
unconventional longitudinal and transverse spin currents, giant magnetoresistance (GMR), and
tunneling magnetoresistance (TMR) effects and their thermal and magnonic counterparts. We
will now discuss these effects highlighting their potential for faster and scalable spintronics
devices.
The anomalous Nernst effect (ANE) and anomalous thermal Hall effect (ATHE) are the
thermoelectric and thermal counterparts, respectively, of the AHE. The ANE describes the
appearance of a transverse voltage induced by a longitudinal heat current in the absence of an
external magnetic field, while the ATHE describes the appearance of a transverse thermal
13
current density under similar conditions. Both phenomena require the same symmetry
conditions as AHE. Consequently, all systems that permit the existence of the AHE also allow
for the occurrence of the ANE and the ATHE. However, the ANE and the ATHE have been
investigated only sporadically in AMs, where the ANE and the ATHE can be termed as crystal
Nernst effect and crystal thermal Hall effect, respectively.[37, 41-42] The measured and calculated
ANE of Mn5Si3 is shown in Figure 5A.[41] Clear hysteretic behavior and saturation in the
transverse thermopower, indicative of a finite ANE, closely correspond to the field dependence
of the anomalous Hall conductivity. The measured magnitude of anomalous Nernst
conductivity ranges from (0.11 ± 0.08) A/(K·m) at 58 K to (0.015 ± 0.005) A/(K·m) at 216 K,
which are in qualitative agreement with the calculated magnitude of 0.25 A/(K·m) for 58 K and
0.12 A/(K·m) for 216 K, respectively. Besides, it has been demonstrated that the anomalous
Nernst conductivity undergoes a drastic sixfold enhancement in Mn5Si3 films with a small
amount of Mn doping, especially in Mn5.10Si2.90.[42] In addition, Zhou et al.[37] analyzed the
sources of the large anomalous Nernst conductivity in RuO2 through first-principles
calculations, identifying Weyl fermions arising from band crossings, strong spin-flip
pseudonodal surfaces, and weak spin-flip ladder transitions as key contributors. Based on this,
the total anomalous Hall/Nernst conductivity was decomposed into spin-conserving and spin-
flip parts (Figure 5B). The results show that, within the hole doping range of -0.2 to 0.0 eV, the
ANE is predominantly driven by the spin-flip processes. Moreover, due to the topological Weyl
points, the Wiedemann-Franz law, which reflects the relationship between the anomalous Hall
conductivity and anomalous thermal Hall conductivity at low temperatures, is applicable up to
150 K in RuO2, a range significantly broader than what is typically expected of conventional
magnets (Figure 5C).[37] Furthermore, Hoyer et al. used a toy model of an insulating d-wave
AM to investigate the ATHE of magnons, showing that it was strongly dependent on the Néel
vector orientation and strain.[86] These works enhance our understanding of anomalous transport
behavior associated with alternating spin-splitting band structure in AMs. Given these insights,
AMs may play a leading role in the future development of spintronics and spin caloritronics.
14
Figure 5. A) Transverse Nernst signal (brown) and anomalous Hall conductivity (black) of as
a function of applied magnetic field for a sample average temperature of 216 K (left) and ab
initio calculated band structure and ANE at 58 K and 216 K (right) for Mn5Si3. Reproduced
with permission.[41] Copyright 2024, The Authors, Published by arXiv. B) The calculated total
anomalous Hall (left) /Nernst (right) conductivity and their spin-conserved and spin-flip parts
of RuO2. C) Anomalous Hall conductivity, anomalous thermal Hall conductivity and
anomalous Lorenz ratio as a function of temperature at different Fermi levels. Reproduced with
permission.[37] Copyright 2024, American Physical Society.
Figure 6. A) Schematic of the longitudinal spin current (left) and transversal spin current (right)
in RuO2. B) 𝒯-odd charge-spin conversion ratio calculated with (solid line) and without (dashed
line) SOC. The Néel vector is oriented along [001]. Reproduced with permission.[19] Copyright
2021, American Physical Society. C) Schematic of ST-FMR measurements for the
RuO2(100)/Py (left) and the RuO2(110)/Py (right) samples. D) ST-FMR spectra of the
RuO2(100)/Py (left) and the RuO2(110)/Py (right) samples. E) The calculated spin torque
efficiency (left) and the spin torque conductivity (right) in RuO2(100) and RuO2(110) films.
Reproduced with permission.[96] Copyright 2022, American Physical Society.
17
The spin splitting of altermagnetic bands and the associated spin currents proposed in RuO2[19]
make it possible to be used in GMR[21] and TMR[20-21] effects. GMR (TMR) effect refers to the
phenomenon where the resistance of a magnetic tunnel junction—comprising a nonmagnetic
metallic (insulating) layer sandwiched between two ferromagnetic electrodes—varies with the
relative orientation of the magnetic order of the two ferromagnetic layers, and a higher spin
polarization of the electrodes results in a large MR ratio.[104-106] A large magnitude of GMR
ratio (𝜌7 − 𝜌17 )/(𝜌7 + 𝜌17 ), where P(AP) corresponds to (anti)parallel alignment of Néel
vector in altermagnetic layers separated by nonmagnetic metallic spacer, up to 100% was
predicted in magnetic tunnel junction comprised of RuO2.[21] TMR in AMs has been studied
both from first-principle and model calculations. [20-21] Shao et al. designed a RuO2/TiO2/RuO2
tunnel junction (Figure 7A).[20] The 𝑘∥ -resolved transmission for spin-up and spin-down
channel in P states clearly showed a large distribution of the spin-polarized conduction channels
in RuO2 (Figure 7B, left panel). In contrast, for the AP state, only the states near the zone center
contributed to the transmission (Figure 7B, right panel), resulting in a significantly lower total
transmission compared to the P state (Figure 7C). The calculated TMR ratio can reach up to
500% at the Fermi level (Figure 7D), a value comparable to that obtained in commercially used
Fe/MgO/Fe (001) magnetic tunnel junction.[107-108] The superior performance suggests that
altermagnetic TMR/GMR holds promise for commercial applications.
18
Figure 7. A) Structures of a TMR stack of RuO2/TiO2/RuO2 tunnel junction with parallel (P)
and antiparallel (AP) alignment of the Néel vectors. B) Ab initio calculated 𝑘∥ -resolved
transmission of spin-up and spin down channel for P and AP states. C) Total transmissions with
respect to energy for P and AP states. D) Energy dependence of calculated TMR. Reproduced
under the terms of the CC-BY 4.0 license.[20] Copyright 2021, The Authors, Published by
Springer Nature.
Figure 8. A) Kerr rotation and Faraday rotation angle and B) Kerr ellipticity and Faraday
ellipticity for the left- and righthanded chirality states (𝜒 = ±1) of RuO2. C) Kerr and Faraday
rotation angles for the left- and right-handed chirality states of CoNb3S6. Reproduced with
permission.[111] Copyright 2021, American Physical Society. D) Mn L2,3-edge spectra,
comparing theoretical results (solid black line) and experimental data (red dotted line), with
light propagation along the c-axis. Top: X-ray absorption spectroscopy. Middle: XMCD in zero
magnetic field following cooling in a 6 T field. Bottom: measured XMCD in an applied
21
magnetic field of 6 T, calculated XMCD with k aligned parallel to the magnetic moment,
normalized by the ratio 𝑚9: = 𝑚!;< ≈ 1/50 . E) XMCD following cooling in opposing
magnetic fields. Reproduced with permission. [117] Copyright 2024, American Physical Society.
F) Real (red) and imaginary (blue) components of the optical conductivity tensor at the Ru M2,3
edge for various orientations of the Néel vector. Reproduced with permission.[118] Copyright
2024, American Physical Society.
3.2 Janusization
24
In addition to applied electric field, built-in electric field arising from a Janus structure can
also break the inversion symmetry, thus enabling the transformation of a conventional AFM
into an AM. For instance, in monolayer MnPSe3, if one of the two Se layers is completely
substituted with a different atomic species, such as S atoms (Figure 10B),[143] to form a Janus
structure, the 𝒫𝒯 symmetry is broken while the two spin sublattices are mapped on top of each
other by mirror rather than inversion or translational symmetries. The resulting band structure,
in the absence of SOC, shows altermagnetic spin splitting of i-wave symmetry. Besides, the
process of Janusization could facilitate the integration of piezoelectricity, piezovalley, and
piezomagnetism with altermagnetism, significantly expanding the versatility of AMs.[144-145]
25
a more comprehensive analysis of twisted bilayer AMs and demonstrated that the spin-splitting
character can range from d-wave to i-wave symmetry.[103]
26
Figure 10. Four mechanisms of inducing altermagnetic phase. A) Top: applying external
electric field. Bottom: placing the monolayer on a substrate. B) Forming a Janus structure by
replacing the bottom Se atoms with S atoms. Reproduced with permission.[143] Copyright 2024,
The Authors, Published by arXiv. C) Twisting bilayer of MnPSe3. Reproduced with
permission.[154] Copyright 2024, American Physical Society. D) Supercell magnetic
configurations of MnSe2-Ⅰ (up) and MnSe2-Ⅱ (down) and their corresponding nonrelativistic
band structures. Cyan and magenta denote positive and negative values of the spin density,
respectively. Reproduced with permission.[155] Copyright 2024, American Physical Society.
4. Altermagnetic candidates
In this Section, we review the altermagnetic candidates, neglecting the artificial AMs
mentioned in Section 3. Before moving on to this Section, we recall the criteria necessary to
identify altermagnetic phase[31]: an even number of magnetic atoms in the magnetic unit cell;
no 𝒫𝒯 and 𝒯𝜏 symmetries; the sign of the spin splitting alternates across the Brillouin zone;
the two opposite-spin sublattices are linked by a real space rotation transformation (proper or
improper, and symmorphic or non-symmorphic). It is worth noting that symmetry constraints
prevent the emergence of one-dimensional (1D) AMs, owing to the absence of rotational
transformations in reciprocal space for 1D systems. Therefore, we focus exclusively on 2D and
3D altermagnetic candidates, encompassing a diverse spectrum of conduction types ranging
from insulators and metals to superconductors. In addition, a program was recently developed
27
to determine the magnetic phase of symmetry-compensated collinear magnetic material. We
refer interested readers to a detailed information in ref. [156].
28
18 Cr2Se2O P4/mmm (123) d-wave [133]
Table 2. 3D altermagnetic candidates with their corresponding NSG, MSG, and Néel
temperature. The number of NSG represents in parentheses. The experimentally indicated AMs
via measurements of spin-splitting spectrum and anomalous transport are highlighted in bold.
Néel temperature
No. Compound NSG MSG Ref.
[K]
[9-10, 55, 65, 76,
1 RuO2 P42/mnm (136) P42’/mnm’ > 300
82, 96-99, 102]
2 CoNb3S6 P6322 (182) C2’2’21 25 [9, 74, 111, 169]
[14, 41-42, 83,
3 Mn5Si3 P63/mcm (193) P1" 240
85]
[24, 43, 51-54,
4 CrSb P63/mmc (194) P63’/m’m’c > 600
170]
[24, 38, 48-49,
5 MnTe P63/mmc (194) Cm’c’m 310 78, 116-117,
171-172]
29
6 LiFeP2O7 P21 (4) P21 22 [9, 173]
30
47 Ca3Cr2O7 Cmc21 (36) [168]
31
88 CaMnO3 Pnma (62) 120 [9, 242]
32
129 NaFeO2 P41212 (92) [168, 276]
33
170 K1.62Fe4O6.62(OH)0.38 P3"1c (163) " 1c
P3 [167, 307]
34
210 MnSe2 " (205)
Pa3 Pbca [167, 338]
5. Conclusion
In this review, we explore the intriguing world of AMs, focusing on their physical properties,
the various methodologies used to induce altermagnetism, and the promising candidates for
altermagnetic materials. As a magnetic phase that has only recently been identified, the study
of AMs remains in its foundational stages, and the existence of a real material that exhibits all
the predicted features of altermagnetism has yet to be conclusively demonstrated. This nascent
field promises a wealth of uncharted physical properties, which may pave the way for
groundbreaking applications in technology. Given their unique magnetic behaviors, AMs could
revolutionize fields such as data storage, spintronics, and magnetic sensing, offering more
efficient and durable alternatives to traditional ferromagnetic and antiferromagnetic materials.
The coming decades may witness significant advancements as researchers continue to uncover
the full potential of these materials, potentially leading to the development of faster, smaller,
and more energy-efficient electronic devices that leverage the unique properties of AMs.
Acknowledgements
This work is supported by the National Key R&D Program of China (Grant No.
2022YFA1403800, No. 2022YFA1402600, and No. 2020YFA0308800), the National Natural
Science Foundation of China (Grant No. 12274027, No. 12234003, No. 12321004 and No.
12347214). Y. M. and L. S. acknowledge support by the DFG-TRR 288-422213477/2 and
DFG-TRR 173-268565370/3. We also acknowledge the Joint Sino-German Research Projects
(Chinese Grant No. 12061131002 and German Research Foundation, DFG, Grant No.
44880005) for funding.
35
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This review provides an overview of the recent progress in the study of emergent magnetic
phase known as altermagnetism. The unconventional properties of altermagnets, including
lifted Kramer degeneracy, anomalous and spin transport properties, magneto-optical effects and
chiral magnons, along with several avenues to inducing altermagnetism are introduced.
Additionally, the two-dimensional and three-dimensional altermagnets discovered so far are
summarized.
Ling Bai, Wanxiang Feng*, Siyuan Liu, Libor Šmejkal, Yuriy Mokrousov, Yugui Yao*
49