General Introduction To Ferroelectrics
General Introduction To Ferroelectrics
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General Introduction to
Ferroelectrics
Muzaffar Iqbal Khan and Trilok Chandra Upadhyay
Abstract
1. Introduction
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Ferroelectrics
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General Introduction to Ferroelectrics
DOI: http://dx.doi.org/10.5772/intechopen.97720
Figure 1.
Classification of piezoelectric and pyroelectric materials [6].
Figure 2.
Venn diagram showing the relationship between various types of dielectric materials [8].
insulator that can be polarized under an external applied electric field. Dielectric
materials are often characterized by their dielectric permittivity, which describes
the material’s resistance against polarization by an external electric field [7, 8]. A
group of dielectrics that show a change of strain or stress due to an applied external
electric field or conversely to the change of the polarization due to a mechanical
excitation are called piezoelectrics. Pyroelectrics are a group of piezoelectrics that
show a change of polarization due to a change in temperature. Ferroelectric
materials have both pyroelectric and piezoelectric properties.
Ferroelectricity is the phenomenon that refers to the state of spontaneous polar-
ization, usually vanishes above a certain temperature called Curie or transition
temperature (T c Þ. At the T c , the crystal undergoes a phase transition from the polar
state to the non-polar state. Three well-known characteristics of ferroelectrics are
(i) their reversible polarization, (ii) their anomalous properties and (iii) their non-
linearities. Above the transition temperature (T c Þ, the crystal is said to be the
paraelectric state. The term paraelectric is analogous with paramagnetism; simi-
larly, there is usually a rapid drop in the dielectric constant (εÞ as the temperature
3
Ferroelectrics
C
ε ¼ ε0 þ (1)
ðT T0Þ
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General Introduction to Ferroelectrics
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Figure 3.
Schematic potential well [13].
Figure 4.
Plots of spontaneous polarization versus temperature: (a) first-order transition (b) second order
transition [13].
The detailed microscopic theory of how this happens will be different from
material to material, but the macroscopic properties of the phase transition will be
similar across many different classes of materials. A first-order phase transition is
one that has a discontinuity in the order parameter itself, while a second-order
phase transition is one that has a discontinuity in the first derivative of the order-
parameter. In a first-order transition, the polarization varies continuously until the
Curie temperature, at which there is a discontinuity shown in Figure 4a. In a
second-order transition, the order parameter itself is a continuous function of
temperature, but there is a discontinuity in its first derivative at Curie temperature
shown in Figure 4b [13].
3. Spontaneous polarization
The intensity of polarization (P) is defined as the electric dipole moment per unit
volume of the dielectric material. Spontaneous polarization (Ps Þ is a polarization that
5
Ferroelectrics
occurs under the influence of an internal process in a dielectric, without the effect of
external factors. A ferroelectric crystal generally consists of regions called domains of
homogeneous polarization, within each of which the polarization is in the same
direction, but in the adjacent domains, the polarization is in different directions so
that the net polarization of the specimen is equal to zero in the beginning when no
electric field (E ¼ 0) is applied. The polarization varies in a non-linear configuration
with an electric field (E). This non-linear relation exhibits the closed curve called the
hysteresis loop in the polarization when an electric field is applied, as shown in
Figure 5 [2–6]. When the electric field (E ¼ 0) is zero, the spontaneous polarization
(Ps Þ in a single domain specimen is either positive or negative in sign. As an applied
electric field strength gradually increases in the direction of spontaneous polarization
(Ps Þ, the polarization (P) increases due to induced polarization such as electronic,
ionic and dipolar types. As the electric field is increased further, more and more
domains rotate along the direction of the electric field (E) until the polarization
reaches a maximum value called the saturation value.
At this stage, the whole specimen represents a single domain. This is usually
accompanied by a distortion in the crystal along the polarization direction. The
extrapolation of the saturation value to zero field gives the magnitude of the spon-
taneous polarization (Ps Þ. This value of Ps is the same as possessed by each domain
before the application of the electric field. However, if the applied electric field
decreases, the polarization also decreases but follows another path and does not
become zero for zero electric field. The remaining polarization at this stage is called
remnant polarization ðPr Þ and the intercept on the E-axis, where Pr refers to the
whole crystal block. In order to destroy the remnant polarization (Pr Þ, the polariza-
tion of nearly half of the crystal is to be reversed by reversing the direction of the
field, the electric field required to make the polarization zero is called the coercive
field (Ec Þ. Furthermore, an increase in the reverse field results in the saturation of
polarization in the reverse direction. Reversing the electric field again, the hystere-
sis curve will be obtained. The relation between polarization (P) and applied electric
field ðEÞ is thus represented by a hysteresis loop (BDFGHB) which is the most
important characteristic of the ferroelectric crystals. The most important feature of
a ferroelectric is thus not the fact that it has a spontaneous polarization (Ps Þ but
rather the fact that this spontaneous polarization can be reversed by means of an
electric field [2–14].
Figure 5.
Ferroelectric (P-E) hysteresis loop [13].
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General Introduction to Ferroelectrics
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4. Dielectric properties
The electric field acting at the site of atom or molecule is, in general, signifi-
cantly different from the macroscopic filed E and is known as the local field ðEloc Þ.
This field is responsible for the polarization of each atom or molecule of a material
[5, 6]. For an atomic site with cubic crystal symmetry, the local field ðEloc Þ is
expressed by the Lorentz-relation as
P P
Eloc ¼ E0 þ EP þ ¼Eþ (2)
3ε0 3ε0
P ∝ E ) P ¼ ε0 χ e E (3)
D ¼ ε0 εr E ¼ εE ¼ ε0 E þ P (4)
D ε0 E þ P P
εr ¼ ¼ ¼1þ ¼ 1 þ χe (5)
ε0 E ε0 E ε0 E
Eq. (5) gives the dielectric constant of an isotropic medium or cubic medium.
This is represented by a scalar quantity. The dielectric susceptibility (χ e Þ is related to
the dielectric constant defined as
7
Ferroelectrics
P
χe ¼ ¼ εr 1 (6)
ε0 E
Thus, like susceptibility, the dielectric constant (εr Þ is also a measure of the
polarization (P) of the material. The larger the polarization per unit resultant
macroscopic field, the greater will be the dielectric constant of the dielectric
medium. However, for anisotropic medium, the dielectric response (εr or χ e Þ
depends on the direction of the field and described by the components of the
susceptibility tensor or of the dielectric tensor of the second rank
The polarizability ðαÞ of an atom is defined in terms of the local electric field
(Lorentz field) at the atom. The induced dipoles of moments (p) are proportional to
the local field (Eloc Þ can be expressed as
p ¼ αEloc (8)
where the summation is over all the atoms or atomic sites. N j is the concentra-
tion and αj is the polarizability of atom j and Eloc ð jÞ is the local field at atom sites j.
For an isotropic dielectric medium, the local field given by the Lorentz relation
Eq. (2) inside the crystal is everywhere the same so that it can be taken out of the
summation sign from Eq. (9). Substituting the value of the local field from Eq. (2),
the Eq. (9) becomes
P X
P¼ Eþ N jα j (10)
3ε0 j
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General Introduction to Ferroelectrics
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P
Solving for jN jα j we get
εr 1 1 X
¼ N jα j (13)
εr þ 2 3ε0 j
α ¼ αe þ αi þ αd (14)
where αe , αi and αd are the electronic, ionic and dipolar polarizabilities, respec-
tively shown in Figure 6.
n2 1 1 X
¼ N j α j ðelectronicÞ (15)
n2 þ 2 3ε0 j
n2 ¼ εr (16)
ii. Ionic polarizability (αi Þ: The ionic polarizability (αi Þ arises due to the
relative displacement of positive and negative ions from their equilibrium
positions to a distance less than the distance between adjacent ions. The
cations are displaced parallel to the Lorentz field, and the anions are
displaced in the opposite direction, as shown in Figure 6b [5–18].
Figure 6.
Atomic contributions to electric polarization [18].
9
Ferroelectrics
Figure 7.
Frequency dependence of the various contributions to the polarizability [6].
If the relative displacement of the positive and negative ions is d and the
charge on each ion is q, then the dipole moment per molecule is p ¼ qd and
the ionic polarization becomes
p
p2
αd ¼ ¼ (18)
E 3kT
We find that in the optical frequency range, the dielectric constant (ε0 ) arises
entirely due to the electronic polarizability. The ionic and dipolar contributions are
small at high frequencies because of the inertia of the ions and molecules.
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General Introduction to Ferroelectrics
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5. Classification of ferroelectrics
Ferroelectric crystals have been classified into the following types [1–6].
a. Order–disorder type such as KDP, RS, TGS, LHP and CsH2PO4 (CDP) etc.
11
Ferroelectrics
Figure 8.
Structures of BaTiO3: T > T c left and T < T c right [18].
Figure 9.
Single cell potential for (a) displacive (b) order–disorder ferroelectrics [19].
This situation leads to net dipole moment and hence produces the spontaneous
polarization ðPs Þ of the crystal [6–18]. Figure 9 shows that in displacive ferroelec-
trics active atom has a single potential, while in the order–disorder ferroelectrics,
the active atom has a double-well potential [19]. In the order–disorder systems, the
proton can tunnel through the barrier, which separates the two minima of the
potential energy in the hydrogen bond, and the ground state of the system splits
into two levels separated by an energy Ω. The magnitude of Ω depends on the
overlap of the wave functions appropriate to a proton located in each of the two
separated minima.
6. Thermodynamics of ferroelectricity
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General Introduction to Ferroelectrics
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ferroelectricity in Rochelle salt. Thereafter, for about twenty years, the mechanism
of ferroelectricity remained a mystery. In the period between 1935 and 1938, ferro-
electricity in KDP crystal and its isostructural crystals was observed [21]. In order to
explain ferroelectricity in KDP, a microscopic model Hamiltonian of disordered
proton compositions was proposed, based on which a pseudospin model was devel-
oped by Slater [22] and Takagi [23] later independently. Ferroelectricity in Barium
titanate (BaTiO3) was reported in 1945–1946 [24, 25], and a microscopic model of
Ti4þ ion displacement was proposed by Slater in 1950 [26]. Devonshire [27]
developed a phenomenological approach based on Landu-Ginburg phase transition
theories [28, 29] to explain ferroelectric phase transitions. Later on, the thermody-
namic theories of piezoelectricity were summarized by Cady [30] and Mason [31]
independently. The most important concept in the theory of solid-state phase tran-
sitions is the concept of a “soft mode”, which was developed on the basis of lattice
dynamics by Cochran [32, 33] and Anderson [34]. According to the concept of a
“soft mode”, ferroelectric order stems from the instability of a transverse vibra-
tional mode or a ferroelectric mode. Detailed lattice dynamic calculations for ferro-
electric crystals and more rigorous mathematical treatments of the soft mode in
ferroelectrics and anti-ferroelectrics have been made by Blinc and Zeks [35] and
others [36]. Later on, ten years ago, it was believed that there were two different
types of ferroelectric phase transition mechanism: displacement type and order–
disorder type. However, several ferroelectric phenomena discovered that could be
explained neither by a displacement type mechanism nor by an order–disorder type
mechanism unequivocally. Therefore, several unified models based on a combina-
tion of both mechanisms have been proposed [37], such as in the general model
developed by Stamenkovic et al. [38], two basic ordering parameters associated
with the motion of active atoms etc. Based on the theory of phase transition of
Landau-Ginzburg [28, 29] and Devonshire [27], developed the phenomenological
theory of ferroelectricity by choosing the polarization as an order parameter. The
most convenient treatment of the ferroelectric phase transition by using the elastic
Gibbs function G1 as a state function of the ferroelectric system and the tempera-
ture (TÞ, stress (ΛÞ and polarization (P) as independent variables [39, 40]. The
Gibb’s free energy function is expressed as
X
G1 ¼ U Tσ þ Si Λ j (19)
i, j
where U is the internal energy of the system, T is the temperature and σ is the
entropy, Si and Λ j are the ith and jth component of mechanical strain and stress.
Making the use of a differential form of the internal energy
X X
dU ¼ Tdσ Λ j dSi þ En dPm (20)
i, j n, m
where En is the components of the electric field. Therefore, we can write the
differential form of elastic Gibbs function
X X
dG1 ¼ σdT þ Si dΛ j þ En dPm ði, j ¼ 1, 2, … 6; m, n ¼ 1, 2, 3Þ (21)
i, j n, m
where En is the components of the electric field, we have En ¼ dG
dPn T,Λ and
1
dG1
Si ¼ dΛi . Since the Gibbs free energy density G ¼ G1 En Pm , the stable state
T,P
13
Ferroelectrics
of the system can be determined by the minimum of Gibb’s free energy (G). If T
and Λi are constants, G1 is a function of the polarization P (if G1 and Pn are known,
then En are entirely determined).
1 1 1
G1 ðT, PÞ ¼ G10 ðT Þ þ βðT ÞP2 þ ξ1 ðT ÞP4 þ ξ2 ðT ÞP6 þ … (22)
2 4 6
where G10 ðT Þ is the value of elastic Gibb’s free energy (G1 Þ of the system at P ¼
0 and in general, the coefficients G10 , β, ξ1 and ξ2 … ., are the functions of
temperature (T). A stable state of a thermodynamic system is characterized by a
minimum value of the Gibbs free energy G. We have G1 ¼ G when E ¼ 0, G can be
replaced by G1 . When a crystal exhibits a stable spontaneous polarization (Ps ) at a
certain temperature, the conditions for a minimum of G1 are
2
∂G1 ∂ G1 ∂E 1
¼ 0, 2
> 0 or ¼χ >0 (23)
∂P Ps ∂P Ps ∂P Ps
Using Eq. (22) into (23), we obtained the equation of state for the ferroelectric
system of the form
Ps β þ ξ1 Ps 2 þ ξ2 Ps 4 ¼ 0
(24)
1
¼ β þ 3ξ1 Ps 2 þ 5ξ2 Ps 4 > 0
χ (25)
Eq. (24) has two roots: (i) the first root Ps ¼ 0 corresponds to a paraelectric
phase and (ii) the second root Ps 6¼ 0 corresponds to a ferroelectric phase.
1
χ ¼ β ðT Þ > 0 (26)
It is obvious that the value of β have a positive value when a stable state of the
crystal is a paraelectric phase. Therefore, the boundary conditions at the critical
temperature is ðβðT ÞÞT0 ≥ 0. Expanding βðT Þ as a Taylor’s series in ðT T 0 Þ and
taking into account only the first-order term in ðT T 0 Þ, we have
ðT T0Þ
β ðT Þ ¼ (27)
C
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General Introduction to Ferroelectrics
DOI: http://dx.doi.org/10.5772/intechopen.97720
C
χ¼ (28)
ðT T0Þ
where C is the Curie–Weiss constant. This is the Curie–Weiss law, which applies to
the dielectric susceptibility in a paraelectric phase. In the case of spontaneous polariza-
tion Ps ¼
6 0, we will see that the one result corresponds to a second-order phase transi-
tion when ξ1 > 0, and that the other result to a first-order phase transition when ξ1 < 0.
Consider first case ξ1 > 0. The roots of Eq. (24) for Ps 2 6¼ 0 are
h 1=2 i
ξ1 ξ1 2
4βξ2
Ps 2 ¼ ðξ1 , ξ2 > 0, β < 0Þ (29)
2ξ2
6.4 Susceptibility
When the temperature is below T c . From Eq. (26), we get reciprocal of the
dielectric susceptibility
1 ∂E
χ ¼ ¼ β þ 3ξ1 Ps 2 þ 5ξ2 Ps 4 (30)
∂P P¼Ps
The term of ξ2 Ps 4 can be neglected when the temperature is below and near T c
because then Ps is very small and using the relation Ps 2 ¼ ξβ1 , ðβ < 0, ξ1 > 0 Þ into
Eq. (30) we have.
1 ðT Tc Þ
χ ¼ 2β ¼ 2 , ðT < T c Þ (31)
C
For ξ1 > 0, using Eq. (22), G1 G10 is plotted as a function of the polarization
(P) at several temperatures (T c1 < T c < T c2 Þ in Figure 10b. Since the sign of β,
positive at T ¼ T c and at T c2 , turns negative at T c1 , the curve representing
(G1 G10 ) changes from a minimum at T c2 to maximum at T c1 at P ¼ 0. At T c1 , the
two minima of the free energy (P 6¼ 0) corresponds to stable ferroelectric states.
15
Ferroelectrics
Figure 10.
Functional relations of (a) χ 1 versus T; (b) G1 G10 versus P; (c) P versus E and (d) P versus T near the
second-order phase transition [40].
E ¼ βP þ ξ1 P3 þ ξ2 P5 (32)
ðT c T Þ
P2s ¼ (33)
ξ1 C
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General Introduction to Ferroelectrics
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Figure 11.
1
Functional relations of (a) G1 G10 versus P; (b) P versus E; (c) χ versus T and (d) P versus T near the
first-order phase transition [40].
3j ξ 1 j 3ξ 2 3β
P2s ðT c Þ ¼ , β ¼ 1 , P4s ðT c Þ ¼ (34)
4ξ2 16ξ2 ξ2
Combing the Eq. (30) with Eq. (34) and keeping in the mind that ξ1 < 0 in the
second term of Eq. (30) we get.
1 ðT TcÞ
χ ¼ 4β ¼ 4 (35)
C
17
Ferroelectrics
does not explain the isotope effect. Blinc [44] introduced the concept of proton
tunneling motion between the two equilibrium sites in the double-well minimum
O-H–O bond potential. The Blinc’s [44] concept was quickly put into the simple
formalism of the pseudospin-model by De Gennes [45] and independently by
Matsubara [46]. De Gennes [45] showed that the proton in a double minimum type
potential has described by a one-half pseudospin. The pseudospin model Hamilto-
nian developed to explain the proton system and the triggering of phase transition
can be ascribed to the ordering of the proton in the double-well potential. The
dipoles formed by the proton ordering make a small contribution to the spontane-
ous polarization ðPs Þ which is the result of heavy atoms displacements along the
ferroelectric axis. The major contribution to the spontaneous polarization ðPs Þ is the
displacement of heavy atoms projected on c-axis. To account for the displacement
of the heavy atoms, Kobayashi [47] included pseudospin lattice interaction into the
pseudospin model. The net result of this approach was to enhance the effective
dipolar proton-proton interaction.
Later on, Arefev et al. [48] and Brout et al. [49] suggested that essentially the
same concept could also be applied such that KDP etc. In this case, where the
permanent electric dipoles move-in a potential with more than one equilibrium
position and the soft mode collective excitations are not phonons but rather the
unstable pseudospin phonon coupled-wave. Kaminow [50] experimentally con-
firmed the existence of soft mode in KDP crystal, and the other investigators also
confirmed the soft mode in other ferroelectric crystals. It is now well recognized
that the several interesting properties of ferroelectrics are associated with the high-
temperature dependence of the soft mode. Cowely [51] has given a microscopic
theory of ferroelectricity in which the temperature dependence of the normal mode
(soft mode) arises from anharmonic interactions between normal modes. These
anharmonic interactions in a crystal are quite small, at least at low temperatures, so
that an anharmonic crystal provides an example of the many-body system in which
interactions between the elementary excitations are both small and non-singular. In
the harmonic approximation, the equations of motion of the shell model can be
obtained from a quadratic function of the displacements of the ions and of the
electronic dipoles produced on the ions during the lattice vibrations. The
anharmonic interactions arise from the cubic and higher terms in potential func-
tion, and in general, there will be anharmonic interactions between all the displace-
!
ments and all the dipoles. In the ferroelectrics, the root at wave vector k ¼ 0 is
imaginary in the harmonic approximation showing the instability of the lattice [51].
This indicates that the harmonic forces alone are not sufficient to stabilize the
system at any temperature. The stabilization of the mode can only be brought about
by a consideration of anharmonic interactions terms. The anharmonic interactions
thus play a fundamental role as regards the stability of the crystal system. A number
of physical properties of solids could be well explained by considering the effects of
phonon anharmonic interactions.
A very successful attempt has been made to give a microscopic theory of ferro-
electric crystals given by Cochran [33, 52]. This lattice dynamical theory is based on
the hypothesis that the ferroelectric transitions are the results of the instability of the
crystal lattice with respect to one of the homogeneous (wave number k ¼ 2πλ ¼ 0)
transverse optic mode. If a crystal is fully or partly ionic, lattice vibrations are
accompanied by polarization oscillations having an equal frequency which provide a
Lorentz field called local field interacting with the ions through long-range Coulomb
forces. The crystal becomes unstable for one particular mode of vibration at which
the long-range forces are equal and opposite to the short-range forces. A relation
given by Lyddane et al. [53] explains the relation between the ferroelectric properties
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εs ωL 2
¼ (36)
ε e ωT 2
This Eq. (36) produces one essential anomaly needed to explain a ferroelectric
transition. In order to complete understanding the ferroelectric behaviour, it is
necessary to investigate the temperature of ωT 2 . In the ferroelectric crystal, the
static dielectric constant (εs ) obeys Curie–Weiss law above T c ðT > T c Þ . Eq. (37) was
derived for harmonic forces. In order to derive the temperature dependence of ωT 2
it will be necessary to introduce anharmonic interaction, which shows little effect
on any mode other thank ¼ 0 mode, and only that mode exhibits any anomalous
behaviour. Thus Eq. (37) through (36) implies that the transverse optical mode ωT 2
have anomalous temperature dependence given by the Curie–Weiss law by a rela-
tion ωT 2 ¼ K ðT T c Þ, where the coefficient K is constant related to the tempera-
ture dependence dielectric constant εðT Þ through the Lyddane et al. [53] relation.
8. Applications of ferroelectrics
Ferroelectric materials have been extensive applications [3, 54] in a large num-
ber of areas due to their peculiar and interesting properties such as high permittivity
capacitors (BaTiO3), ferroelectric non-volatile FeRAM memories (due to bi-stable
polarization in modulation and deflector), pyroelectric sensors, piezoelectric and
electrostrictive transducers (TGS crystal), electrooptic and optoelectronic devices
(due to their non-linear polarizability), thermistors, storage and laser devices, sen-
sors, resonators and actuators which have revolutionized consumer electronics,
automobile industry, biomedical diagnosis, underwater acoustic technology,
defense-related sectors, gas sensing devices and surface acoustic wave technology,
etc. The major areas of applications [3, 54] of ferroelectrics have received a great
deal of attention amongst all the above capacitors, ferroelectric memories, pyro-
electric sensors, piezoelectric, electrostrictive transducers, electrooptic devices and
thermistors. The basic specifications required for capacitors are small size, large
capacitance (materials with a large dielectric constant are desired). High frequency
characteristics (ferroelectrics with a high dielectric constant are sometimes associ-
ated with dielectric dispersions, which must be taken into account for practical
applications). Ferroelectric relaxors such as Pb(Mg1/3Nb2/3)O3 and Pb(Zn1/3Nb2/3)
O3 are some examples of these applications.
The bi-stable polarization of ferroelectrics makes them useful for binary mem-
ory systems. There are volatile and non-volatile memory devices in erasable semi-
conductor memories. Non-volatile memory does not require a holding voltage.
Dynamic random-access memory (DRAM), which is widely used because of its high
integration capability, is an example of volatile memory. Data stored in these
19
Ferroelectrics
memories are lost when the electric power is shut off. To record information of
polarization may be reversed or reoriented by application of an electric field greater
than the coercive field. For erasure, the polarization can be returned to its original
state with an applied field of opposite polarity. To read the stored information, it is
retrieved by electrical or optical means. Optical memory is an electrically addressed
light valve. For example, BaTiO3, (Pb,La)(Zr,Ti)O3 and Pb5Ge3O11 single crystals
are extensively used as light values. When a ferroelectric thin film with a large
polarization-electric field hysteresis is used as the memory capacitor, non-volatile
memory is realized. When a voltage is applied to the gate and the field-effect
transistor (FET) assumes the “on” state, a pulse voltage to the drain generates a
drain current dependent on the remanent polarization state. A large electric field is
applied to a ferroelectric film in every process in the ferroelectric RAM (FeRAM),
the polarization hysteresis characteristic degrades with increasing cycles. This
problem of ferroelectric films needs to be overcome for non-volatile memory appli-
cations. The development of the ferroelectric memory started with DRAMs is com-
posed of a FET and memory capacitor, then moved into FeRAMs and is now
focused on metal ferroelectric semiconductor field-effect transistors (MFSFETs).
BaTiO3, LiNbO3 and KH2PO4 crystals, etc., are some examples of these applications.
The pyroelectric properties of polar materials were studied a long time ago, and
such materials were belonged as electric stones, measuring the current or voltage
response of a crystal to a temperature change, either by continuous heating or by
the absorption of sinusoidally modulated radiation. This is basically due to the
temperature dependence of the spontaneous polarization of a polar material. The
pyroelectric sensors are widely used for monitoring temperature or infrared radia-
tion (IR). Practical applications of the pyroelectric material in temperature sensors
and infrared (IR) light detectors lead to some commercial making of ferroelectric
ceramics. Pyroelectric detectors can be used to record infrared images. The con-
verse effect is called the electrocaloric effect, which may be a future cooling system.
Materials such as TGS, LiTaO3, Sr1/2Ba1/2Nb2O6 etc. are some examples. Another
important application of piezoelectric devices. Certain materials produce electric
charges on their surfaces when mechanical stress is applied. The induced charges
are proportional to the mechanical stress. This is called the piezoelectric effect,
which was discovered in Quartz by Pierre and Jacques Curie in 1880. Materials
showing this phenomenon also conversely have a geometric strain proportional to
an applied electric field showing the converse piezoelectric effect, discovered by
Gabriel Lippmann in 1881. The root of the word “piezo” means “pressure” in Greek.
Hence the original meaning of the word piezoelectricity implied “pressure electric-
ity”. The phenomenon of Piezoelectricity is widely utilized in the fabrication of
various devices such as sensors, transducers, actuators, surface acoustic wave
(SAW) devices, frequency control devices etc. Quartz, BaTiO3, (Pb, Sm)TiO3,
LiNbO3, and LiTaO3 etc., are some materials that can be used for these applications.
Acknowledgements
Authors are thankful to Prof. S.C. Bhatt, Prof. P.D. Semalty for valuable
suggestions and discussions.
20
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Author details
© 2021 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms
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by/3.0), which permits unrestricted use, distribution, and reproduction in any medium,
provided the original work is properly cited.
21
Ferroelectrics
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