SEMICONDUCTORS, TRANSISTORS AND

MOSFET

By,
Amal Jose
Introduction
.

Bohr’s Atomic Model Single isolated

atom: Electrons in
(i) An atom consists of a positively any orbit possess
charged nucleus around which negatively definite energy.
charged electrons revolve
(ii) The electrons can revolve around
the nucleus only in certain permitted
orbits
(iii) The electrons in each permitted Atom in a solid :
orbit have a certain fixed amount of -greatly influenced by the
energy. The larger the orbit (i.e.
larger radius), the greater is the closely-packed neighbouring
energy of electrons. atoms.
(iv) If an electron is given additional
energy , it is lifted to the higher orbit.
-Electron in any orbit of such
The atom is said to be in a state of an atom can have a range of
excitation. This state does not last energies rather than a single
long, because the electron soon falls
back to the original lower orbit by energy. This is
emitting energy known as energy band
Important energy bands in solids

Valence band-The range of energies (i.e. band)

Possessed by valence electrons

Conduction band-The range of energies (i.e. band)

possessed by conduction band electrons

Forbidden energy gap-The separation between conduction band and

valence band on the energy level diagram
Classification of materials
MATERIALS

CONDUCTORS SEMICONDUCTORS INSULATORS

● Large number of ● Very few electrons at ● No free electrons at

free electrons room temperature room temperature
● copper, aluminium ● germanium, silicon ● wood, glass
Properties of semiconductors
(i) The resistivity of a semiconductor is less than an insulator but more than a conductor.

(ii) Semiconductors have negative temperature coefficient of resistance

(iii) When a suitable metallic impurity (e.g. arsenic, gallium etc.) is added to a
semiconductor, its current conducting properties change appreciably
Semiconductors
. semiconductors

Intrinsic Extrinsic
semiconductor in an extremely pure -Semiconductors that are doped with
form impurities

N -type
P- type
# Small amount of pentavalent
# Small amount of trivalent
impurity (Arsenic, Antimony) added
impurity(gallium,Indium) is added
p-n Junction
When a p-type semiconductor is suitably joined to n-type semiconductor, the contact surface
is called pn junction.

potential difference across the depletion layer and is called barrier potential (V0 )
silicon, V0 = 0.7 V ; For germanium, V0 = 0.3 V
Biasing a pn Junction
1. Forward biasing:External d.c. voltage applied to the junction is in such a
direction that it cancels the potential barrier, thus permitting current flow
2. Reverse biasing: External d.c. voltage applied to the junction is in such a
direction that potential barrier is increased
 Transistors
❖ A third doped element is added to a crystal diode in such a way that two pn junctions are formed, the resulting
device is known as a transistor.
❖ Invented in 1948 by J. Bardeen and W.H. Brattain of Bell Telephone Laboratories, U.S.A

Transistors

n-p-n p-n-p
❖ There are three terminals, one taken
from each type of semiconductor.
❖ Middle section is a very thin layer
❖ One side is emitter,opposite is
collector and the middle one is base
Emitter

➢ The section on one side that supplies charge carriers (electrons or holes)
➢ The emitter is always forward biased w.r.t. Base
➢ Heavily doped so that it can inject a large number of charge carriers

Base

➢ The base-emitter junction is forward biased, allowing low resistance for the emitter circuit
➢ The base-collector junction is reverse biased and provides high resistance in the collector circuit
➢ lightly doped
➢ Passes most of the emitter injected charge carriers to the collector

Collector

➢ The section on the other side that collects the charges

➢ Collector is always reverse biased
➢ moderately doped.
Working of npn transistor
➔ The forward bias causes the electrons in the n-type emitter to flow towards the base constituting emitter current IE
➔ As these electrons flow through the p-type base, they tend to combine with holes
➔ Few electrons (less than 5%) combine with holes to constitute base current IB
➔ Remaining cross over the collector region and cause the collector current IC
➔ IE = IB + IC
 Working of pnp transistor
➔ Holes in the p-type emitter to flow towards the base
➔ This constitutes the emitter current IE
➔ Only few holes (5%) combine with electrons
➔ Remaining cross into the collector region to constitute collector current IC
➔
Importance of transistor action
➢ Input circuit (i.e. emitter-base junction) has low resistance
➢ Output circuit (i.e. collector-base junction) has high resistance
➢ Input emitter current almost entirely flows in the collector circuit
★ Transistor transfers the input signal current from a low-resistance circuit
to a high-resistance circuit
Transistor circuit as an amplifier
➢ DC voltage VEE is known as biasing voltage

Suppose;

➔ Collector load resistance RC = 5 kΩ.

➔ Change of 0.1V in signal voltage produces a change of 1 mA in emitter
current
➔ Obviously, change in collector current would also be approximately 1 mA
➔ This collector current flowing through collector load RC would produce a
voltage = 5 kΩ × 1 mA = 5 V
➔ Thus, a change of 0.1 V in the signal has caused a change of 5 V in the
output circuit
Transistor connections
.
Transistor connections

common base common emitter common collector

connection connection connection

Input is applied input is applied Input is applied

between emitter and between base and between base and
base and output is emitter and output is collector while output is
taken from collector taken from the collector taken between the
and base and emitter emitter and collector

Common emitter circuit is the most efficient and most used used. The reasons are:

❖ High current gain

❖ High voltage and power gain
❖ Moderate output to input impedance ratio
Field Effect Transistors (FET)
There are two basic transistor types :

● Bipolar Junction Transistor (BJT)

● Field Effect Transistor (FET).

The ordinary (bipolar) transistors has two principle disadvantages:

1. It has a low input impedance because of forward biased emitter junction.

2. It has considerable noise level.

FET has large input impedance and low noise level

Field Effect Transistors (FET)

Metal Oxide Semiconductor

Junction Field Effect Transistor
Field Effect Transistor
(JFET)
(MOSFET)
Metal Oxide Semiconductor FET (MOSFET)
The main drawback of JFET is that its gate must be reverse biased

FET that can be operated to enhance (or increase) the width of the channel is
called MOSFET.

MOSFET

D-MOSFET E-MOSFET
can be operated only in enhancement-
Can be operated in both the depletion- mode.
mode and the enhancement-mode
D-MOSFET
● The n-channel D-MOSFET is a piece of n-type material with a p-type region
(called substrate) on the right and an insulated gate on the left
● The free electrons flowing from source to drain must pass through the
narrow channel between the gate and the

p-type region

● SiO2 is an insulator, therefore, gate is

insulated from the channel,hence we can apply

either negative or positive voltage to the gate

 E-MOSFET
● E-MOSFET has no channel between source and drain
● It requires a proper gate voltage to form a channel
● Works only in enhancement mode
Applications
❖ Acts as a switch and an amplifier
❖ These devices can both conduct and induct
❖ Small in size so that a single IC can accommodate millions of these devices in itself
❖ Can operate on a low-voltage supply for greater safety which means they yield higher efficiency and
very long life
❖ The transistors can control the flow of current through one channel by changing the intensity of a
small amount of current flowing via a second channel
Summary
MATERIALS

CONDUCTORS SEMICONDUCTORS INSULATORS

Intrinsic Extrinsic

P- type N -type

Transistors

Bipolar Transistors Field Effect Transistors

JFET MOSFET
Thank you