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Bd8316gwl e

The BD8316GWL is a step-up and inverted 2-channel DC/DC converter with a built-in high-side MOSFET, suitable for portable applications with an input voltage range of 2.5 to 5.5V. It features a maximum output boost voltage of 18V, an inverted output voltage range of -9.0 to -1.0V, and operates at a frequency of 1.6MHz. The device includes various protections such as overcurrent, short-circuit, and thermal shutdown, and comes in a compact UCSP50L1 package.
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0% found this document useful (0 votes)
3 views23 pages

Bd8316gwl e

The BD8316GWL is a step-up and inverted 2-channel DC/DC converter with a built-in high-side MOSFET, suitable for portable applications with an input voltage range of 2.5 to 5.5V. It features a maximum output boost voltage of 18V, an inverted output voltage range of -9.0 to -1.0V, and operates at a frequency of 1.6MHz. The device includes various protections such as overcurrent, short-circuit, and thermal shutdown, and comes in a compact UCSP50L1 package.
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Datasheet

Single-chip Type with Built-in FET Switching Regulator Series

Step-up and inverted


2-channel DC/DC converter
with Built-in Power MOSFET
BD8316GWL

●Description ●Important Specifications


The BD8316GWL is step-up and inverted 2-channel ■ Input voltage range 2.5~5.5 [V]
switching regulator with integrated internal high-side ■ Output boost voltage Input voltage(max)~18 [V]
MOSFET. With wide input range from 2.5~5.5V ,it ■ Output inverted voltage -9.0~-1.0 [V]
suitable for application of portable item. In addition,The ■ Maximum current
small package design is ideal for miniaturizing the 1[A](max)
■ Operating frequency
power supply. 1.6 [MHz] (typ.)
■ Nch FET ON resistance
230[mΩ]
■ Pch FET ON resistance
●Features ■ Standby current
230[mΩ]
■ Wide input voltage range of 2.5V to 5.5 V 1[μA](max)
■ High frequency operation 1.6MHz ●Package
■ Incorporates Nch FET of 230mΩ/22V and Pch UCSP50L1 (WLCSP)
Pow FET of 230mΩ/15V 1.8mm×1.5mm×0.5mm, 4×3glid,11pin,
■ Incorporates Soft Start (4.2msec(typ))and hight
side switch of boost channel ●Application
■ Independent ON/OFF signal(STB). Built-in ■ LCD battery
discharge SW for step up channel ■ CCD battery
■ Small package UCSP50L1( 1.8mm×1.5mm, 4× ■ Portable items that are represented by mobile phone
3 grid, 11pin, WLCSP) and DSC
■ Circuits protection OCP,SCP,UVLO,TSD

●Typical Application Input: 2.5 to 5.5 V, ch1 output: 5.6 V / 200m A, ch2 output:5.6V/200mA

0.1uF/10V 10kΩ

56kΩ
Vout1: -5.6V/200mA

4.7uF/10V
4.7uH
VREF NON1 LX1

Vin→ VDD
2.5~5.5V 4.7uF/10V
DIS1

EN CH1→ STB1

EN CH2→ STB2 HS2L


4.7uH
LX2 Vout2: 5.6V/200mA
GND INV2

4.7uF/10V
180kΩ

30kΩ

Fig.1 Application schematic

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●Pin Description

1 2 3 4

Fig.2 Pin assignment (Bottom view)

Pin No. Pin Name Function


A-1 VDD Power input voltage pin. Connect to input ceramic capacitor bigger than 0.47uF.
A-2 HS2L Load SW output pin .Connect to inductor
A-3 LX2 Boost channel drain Nch Power MOS. Connect to diode and inductor.
A-4 GND Ground connection
B-1 LX1 PchPowerMOS drain of boost channel. Connect to diode and inductor
Enable pin of inverted channel.
B-3 STB1
ON threshold set to 1.5V. Integrated pull down resistance (800kΩ(typ))
Enable pin of boost channel.
B-4 STB2
ON threshold set to 1.5V. Integrated pull down resistance (800kΩ(typ))
Discharge SW of inverted channel. Connect to output of inverted channel.
C-1 DIS1
STB1 disable , Output pin voltage is discharged by 100Ω(typ)
Reference voltage of inverted channel.
C-2 VREF
1.0V(typ) is included in error amp offset
Feedback pin of inverted channel. Connect to feedback resistance and set output voltage.
C-3 NON1 The method of output voltage setting is P16/20.
When inverted cannel is disable , the pin is discharged by integrated resistance (150Ω(typ))
Feedback pin of boost channel. Connect to feedback resistance and set output voltage.
C-4 INV2
The method of output voltage setting is P16/20.

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●Block Diagram

Fig.3 Block diagram

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●Function blacks description

1.Voltage Reference
This block generates ERROR AMP reference voltage.
The reference voltage of CH1 is 1.0V, The reference voltage of CH2 is 0.8V.

2.UVLO
Circuit for preventing malfunction at low voltage input.
This circuit prevents malfunction at the start of DC/DC converter and low input voltage .The function monitors VCC pin
voltage and if VCC voltage is lower than 2.2V, function turns off all output of FETs and DC/DC converter , and reset the
timer latch of the internal SCP circuit and soft-start circuit.

3.SCP
Short-circuit protection function based on timer latch system.
When the voltage of NON1 pin is higher than 0V or INV2 pin voltage is lower than 0.8V, the internal SCP circuit starts
counting.
SCP circuit detects output of Error AMP. Since internal Error AMP has highly gain as high as 80dB or more, if input
erroramp voltage cross reference voltage ,the output voltage of Error AMP goes high and detects SCP .
The internal counter is in synch with OSC, the latch circuit activates after the counter counts oscillations to turn off DC/DC
converter output (about 40.9 msec ).

To reset the latch circuit, turn off the STB pin once. Then, turn it on again or turn on the power supply voltage again.

4.OSC
This function determine oscillation frequency . Oscillation frequency of DC/DC converter set at 1.6MHz.

5.ERROR AMP
Error amplifier watch output voltage and output PWM control signals.
The internal reference voltage for Error AMP of ch1 is set at 0V.
The internal reference voltage for Error AMP of ch2 is set at 0.8V.

6.Timing Control
Voltage-pulse width converter for controlling output voltage corresponding to input voltage.
Comparing the internal SLOPE waveform with the ERROR AMP output voltage, PWM COMP controls the pulse width
and outputs to the driver.
Max Duties of ch1 and ch2 are set at 86%.

7.SOFT START
Circuit for preventing in-rush current at the start of DC/DC converter by bringing the output voltage.
Soft-start time is in synch with the internal OSC, and the output voltage of the DC/DC converter reaches the set voltage
after about 4.2m sec.

8.OCP
Circuit for preventing malfunction at over current.
Under input current over electrical characteristics , it supply minimum duty to DC/DC converter and IC stop safety by SCP
detected.

9.TSD
Circuit for preventing malfunction at high Temperature .
When it detects an abnormal temperature exceeding Maximum Junction Temperature (Tj=150℃), it turns OFF all Output
FET, and turns OFF DC/DC Comparator Output.

10. ON/OFF
Voltage applied on STB pin to control ON/OFF channel of each channel.
Turned ON when a voltage of 1.5 V or higher is applied and turned OFF when the terminal is open or 0 V is applied.
Incorporates approximately 800 kΩ pull-down resistance.

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○Absolute maximum ratings(T=25℃)


Parameter Symbol Rating Unit
VDD -0.3~7 V
Maximum power supply voltage
STB1,STB2 -0.3~7 V
IHS2L 1.0 A
Maximum input current ILX1 1.0 A
ILX2 1.0 A
VDD-LX1 15 V
LX2 22 V
Maximum input voltage NON1 -0.3~7 V
INV2 -0.3~7 V
DIS1 -9~0.3 V
Power dissipation Pd 730 mW
Operating temperature range Topr -35~+85 ℃
Storage temperature range Tstg -55~+150 ℃
Junction temperature Tjmax +150 ℃
((*1) When mounted on 74.2×74.2×1.6mm and operated over 25℃ Pd reduces by 4.96mW/℃.

○Recommended operating conditions

Standard value
Parameter Symbol Units
MIN TYP MAX
Power supply voltage VDD 2.5 - 5.5 V
Inverted output voltage VO1 -9.0 - -1.0 V
Step up output voltage VO2 VCC - 18 V

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○Electrical characteristics(Ta=25℃, VDD=3.6V)

Standard value
Parameter Symbol Unit Conditions
MIN TYP MAX
【Low voltage input malfunction preventing circuit】
Detect threshold voltage VUV - 2.2 2.35 V VDD sweep down
Hysteresis voltage ΔVUVhy 50 100 150 mV
【Oscillator】
Oscillating frequency Fosc 1.44 1.6 1.76 MHz
LX1 Max Duty Dmax1 82 86 90 %
LX2 Max Duty Dmax2 82 86 90 %
【Error AMP, VREF】
NON1 feedback resistance
CH1output voltage VO1 -6.072 -6.000 -5.928 V
20kΩ, 120kΩ
VREF line regulation DVLi - 4.0 12.5 mV VDD=2.5~5.5V
INV threshold voltage VINV 0.792 0.800 0.808 V
NON1 input bias current INON1 -50 0 50 nA STB1=3.6V, NON1=-0.2V
INV2 input bias current IINV2 -50 0 50 nA INV2=1.2V
CH1 Soft start time TSS1 3.7 4.2 4.7 ms
CH2 Soft start time TSS2 3.7 4.2 4.7 ms
【Internal FET】
LX1 PMOS ON resistance RON1p - 300 480 mΩ
DIS1discharge resistance RDIS1 - 100 160 Ω VSTB1=0V, IDIS1=-1mA
NON1 discharge resistance RNON1 - 150 240 Ω VSTB1=0V, INON1=1mA
LX2HighsideSW ON resistance RON2p - 150 240 mΩ
LX2 NMOS ON resistance RON2n - 300 480 mΩ
LX1 OCP threshold Iocp1 1.2 2.4 - A
LX2 OCP threshold Iocp2 1.2 2.4 - A
HS2L leak current IleakH1 -1 0 1 uA
LX1 leak current I leak1 -1 0 1 uA
LX2 leak current I leak2 -1 0 1 uA
【STB】
STB pin Active VSTBH 1.5 - 5.5 V
Control voltage Non-active VSTBL -0.3 - 0.3 V
STB pin pull down resistance RSTB1 500 800 1400 kΩ
【Circuit current】
Standby current ISTB - - 1 uA
STB1=STB2=3.6V
Circuit current of operation VDD IDD - 450 650 uA
NON1=-0.2V, INV2=1.2V
◎This product is not designed for normal operation within a radioactive environment.

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●Reference data
(unless otherwise specified Ta=25℃, VCC=3.6V)

1.030 0.850
0.840

INV THRESHOLD[V]
1.020
0.830
0.820
1.010
0.810
VREF [V]

VCC=2.5V VCC=5.5V
VCC=3.6V
1.000 0.800
0.790 VCC=2.5V
0.990
0.780 VCC=3.6V

0.980 0.770 VCC=5.5V

0.760
0.970 0.750
TEMPERATURE[℃] TEMPERATURE[℃]
-50 0 50 100 150 -50 0 50 100 150

Fig.4 VREF vs temp Fig.5 INV2 threshold vs temp

1.700 2.400

VCC=5.5V
VCC=3.6V
1.600 2.300
FREQUENCY[MHz]

UVLO threshold voltage[V]

VCC=2.5V Detect threshold

1.500
2.200
Reset threshold

1.400
2.100

1.300
2.000
0 2 4 6 8
-50 0 50 100 150
VCC[V] TEMPERATURE[℃]

Fig.6 Oscillation frequency vs temp


Fig.7 UVLO detect threshold
Vs temp

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1.4 1.4
VCC=7.0V
1.2 1.2
VCC=7.0V
1.0 1.0

STB OFF thresholdt[mV]


STB ON thresholdt[mV]

VCC=2.5V VCC=5.5V
0.8
VCC=3.6V
0.8 VCC=2.5V
VCC=3.6V VCC=5.5V
0.6 0.6

0.4 0.4

0.2 0.2

0.0 0.0

-50 0 50 100 150 -50 0 50 100 150


TEMPERATURE[℃] TEMPERATURE[℃]

Fig.8 STB ON threshold voltage Fig.9 STB OFF threshold voltage


vs temp vs temp

500 500
450 450
400 400
ON RESISTANCE[mΩ]

ON RESISTANCE[mΩ]

350 350
300 300
250 250 Ta=150deg
Ta=25deg
200 Ta=150deg 200
Ta=25deg Ta=-60deg
150 150
Ta=-60deg
100 100
50 50
0 0

0 2 4 6 8 0 2 4 6 8
VCC[V] VCC[V]

Fig.10 LX1 high side FET ON Fig.11 LX2 high side FET ON
registance vs VCC registance vs VCC

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500 300
450
250
400
ON RESISTANCE[mΩ]

ON RESISTANCE[Ω]
350
200
300
250 Ta=150deg 150
200 Ta=25deg
100
150 Ta=-60deg
Ta=150deg
100 Ta=25deg
50 Ta=-60deg
50
0 0
0 2 4 6 8 0 2 4 6 8
VCC[V]
VCC[V]
Fig.13 DIS1 discharge SW ON
Fig.12 HS2L high side FET ON
registance vs VCC
registance vs VCC

1,000
300
900
250 800
VCC CURRENT[uA]

700
ON RESISTANCE[Ω]

200
600 Ta=25deg

500
150
400
100 300
Ta=150deg
Ta=25deg 200
50 Ta=-60deg
100
0
0
0 1 2 3 4 5
0 2 4 6 8
VCC[V]
VCC[V]

Fig.14 NON1 discharge SW ON Fig.15 VCC input current vs VCC


registance vs VCC (STB ON)

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20

15
PVCC CURRENT[uA]

10

VCC=5.5V

5 VCC=3.6V
VCC=2.5V

-60 -40 -20 0 20 40 60 80 100 120 140

TEMPURTURE[℃]

Fig.16 VCC input current vs Temp


(STB OFF)

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●Example of Application1 Input: 2.5 to 5.5 V, ch1 output: 5.6 V / 200m A, ch2 output:5.6V/200mA

4.7μF/10V
(GRM21BB31A475K) 0.1μF/10V
(GRM155B11A104K)
56kΩ
180kΩ

10kΩ 30kΩ

30V/1A
(RSX101VA-30)

4.7μH
(NR3015T4R7M)

4.7μH
(NR3015T4R7M)

30V/1A
1μF/10V (RSX101VA-30)
(GRM188B11A105K) 4.7μF/10V
(GRM21BB31A475K)

Fig.17 Example of Application1

●Example of Application2 Input: :2.5~5.5 V ch1 output: -9V / 30mA ch2output : 18V/ 30mA

180kΩ 430kΩ
4.7μF/25V
20kΩ 20kΩ

0.1μF/10V
30V/1A

4.7μH

1μF/10V

4.7μH 30V/1A

4.7μF/16V

Fig.18 Example of Application2

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●Example of Board Layout


ROHM SMD Evaluation Board

Fig.19 Assembly Layer

Fig.20 Bottom Layer

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●Typical Performance Characteristic


(Unless otherwise specified, Ta = 25°C, VCC = 3.6V)

(Example of application 1)

100 100
Vin=3.6V
90 90
80 80
CH1Total Efficiency[%]

CH2 Total Efficiency[%]


70 70
60 60 Vin=2.5V
50 Vin=2.5V 50
40 Vin=3.6V 40 Vin=4.5V
30 Vin=4.5V 30
20 20
10 10
0 0
1 10 100 1000 1 10 100 1000
Output Current [mA] Output Current[mA]
Fig.21 CH1 Power conversion Fig.22 CH2 Power conversion
efficiency vs output current efficiency vs output current

‐5.400 5.800
‐5.450 5.750
Vin=2.5V
‐5.500 5.700
Output Voltage [V]

Output Voltage [V]

Vin=2.5V
‐5.550 5.650
‐5.600 5.600
‐5.650 Vin=4.5V Vin=3.6V 5.550 Vin=4.5V Vin=3.6V
‐5.700 5.500
‐5.750 5.450
‐5.800 5.400
0 50 100 150 200 0 50 100 150 200
Output Current [A] Output Current [A]

Fig.23 CH1 Output voltage Fig.24 CH2 Output voltage


vs Output Current vs Output Current

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‐5.4
5.8
‐5.45
5.75
‐5.5
Output Voltage [V]

5.7

Output Voltage [V]


‐5.55
5.65
‐5.6
5.6
‐5.65
Io=10mA 5.55
Io=10mA
‐5.7
5.5
‐5.75
5.45
‐5.8
5.4
2.5 3.5 4.5 5.5
2.5 3.5 4.5 5.5
Input Voltage[V]
Input Voltage[V]
Fig.25 CH1 Output voltage
vs Input voltage Fig.26 CH2 Output voltage
vs Input voltage

5msec/div 5msec/div

Vo1=100mV/div
Vo2=100mV/div

Io=100mA/div Io=100mA/div

Fig.27 CH1 Output current response Fig.28 CH2 Output current response
(output current : 10mA ⇔ 100mA) (output current : 10mA ⇔ 100mA)

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1msec/div 1msec/div

STB1=2V/div STB=2V/div

Vo2=2V/div

Vo1=2V/div

Fig.29 CH1 Soft start waveform Fig.30 CH2 Soft start waveform

500usec/div

STB1=2V/div

Vo1=2V/div

Fig.31 CH1 Discharge waveform [500usec/div]


(STB1:High → Low)

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●Selection of Parts for Applications


(1)Output inductor
A shielded inductor that satisfies the current rating (current value, Ipeak as shown in the drawing below) and has a low
DCR (direct current resistance component) is recommended.
Inductor values affect output ripple current greatly.
Ripple current can be reduced as the inductor L value becomes larger and the
switching frequency becomes higher as the equations shown below.
Δ IL

Vin − Vout + V f 1 Vin × (−Vout + V f )


I peak = × I out + × (Inverted channel)
Vin 2 L × f × (Vin − Vout + V f )
Fig. 32 Ripple current
I × Vout 1 Vin × (Vout − Vin )
I peak = out + × (Boost channel)
Vin × η 2 L × f × Vout

η: Efficiency(<0.92), f: Switching frequency(1.6MHz), L: inductance,

The second terms of equations above are ripple current of the inductor(⊿IL of Fig.32) which should be
set at about 20 to 50% of the maximum output current.

*Current over the inductor rating flowing in the inductor brings the inductor into magnetic saturation, which may lead to
lower efficiency or output bad oscillation. Select an inductor with an adequate margin so that the peak current does not
exceed the rated current of the inductor.

(2) Output capacitor


CH1
The reference voltage of CH1 is 1.0V and the internal reference voltage of the ERROR AMP is 0 V. Output voltage
should be obtained by referring to Equation (3) of Fig.33.
VREF
1.0 V

R1B ERROR AMP


R1A
NON1 Vout = − ・・・ (3)
R1B
R1A

VOUT

Fig.33 CH1output setting


CH2
The internal reference voltage of the ERROR AMP is 0.8 V. Output voltage should be obtained by referring to Equation
(4) of Fig.34.
VOUT

R2A
INV2
( R2 A + R2 B)
R2B Vout = × 0.8 ・・・ (4)
R2B
Inside reference voltage
0.8V

Fig.34 CH2 output setting

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(3) Output capacitor


A ceramic capacitor with low ESR is recommended for output in order to reduce output ripple.
There must be an adequate margin between the maximum rating and output voltage of the capacitor, taking the DC bias
property into consideration.
Output ripple voltage when ceramic capacitor is used is obtained by the following equation.
1
Vpp=⊿IL× + ⊿IL×RESR [V]
2π×f×Co
Co is set within the range of 1~20uF.
Setting must be performed so that output ripple is within the allowable ripple voltage.

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●I/O Equivalence Circuit

VREF NON1,INV2

VCC VCC VCC VCC

VREF
NON1,INV2

STB1,STB2 VCC,LX1,DIS1,GND

VCC
VCC

LX1
STB1,STB2

GND

DIS1

HS2L LX2
VCC VCC

LX2

HS2L

Fig.35 I/O Equivalence Circuit

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○Operation Notes

1.) Absolute maximum ratings


This product is produced with strict quality control. However, the IC may be destroyed if operated beyond its absolute
maximum ratings. If the device is destroyed by exceeding the recommended maximum ratings, the failure mode will be difficult
to determine. (E.g. short mode, open mode) Therefore, physical protection counter-measures (like fuse) should be implemented
when operating conditions beyond the absolute maximum ratings anticipated.
2.) GND potential
Make sure GND is connected at lowest potential.
3.) Setting of heat
Make sure that power dissipation does not exceed maximum ratings.
4.) Pin short and mistake fitting
Avoid placing the IC near hot part of the PCB. This may cause damage to IC. Also make sure that the output-to-output and output
to GND condition will not happen because this may damage the IC.
5.) Actions in strong magnetic field
Exposing the IC within a strong magnetic field area may cause malfunction.
6.) Mutual impedance
Use short and wide wiring tracks for the main supply and ground to keep the mutual impedance as small as possible. Use inductor
and capacitor network to keep the ripple voltage minimum.
7.) Thermal shutdown circuit (TSD circuit)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only
to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not
continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed.
8.)Rush current at the time of power supply injection.
An IC which has plural power supplies, or CMOS IC could have momentaly rush current at the time of power supply injection.
Because there exists inside logic uncertainty state. Please take care about power supply coupling capacity and width of power
Supply and GND pattern wiring.
9.)IC Terminal Input
This IC is a monolithic IC that has a P- board and P+ isolation for the purpose of keeping distance between elements. A P-N junction
is formed between the P-layer and the N-layer of each element, and various types of parasitic elements are then formed.
For example, an application where a resistor and a transistor are connected to a terminal (shown in Fig.36):
○When GND > (terminal A) at the resistor and GND > (terminal B) at the transistor (NPN), the P-N junction operates as
a parasitic diode.
○When GND > (terminal B) at the transistor (NPN), a parasitic NPN transistor operates as a result of the NHayers of other
elements in the proximity of the aforementioned parasitic diode.
Parasitic elements are structurally inevitable in the IC due to electric potential relationships. The operation of parasitic elements
Induces the interference of circuit operations, causing malfunctions and possibly the destruction of the IC. Please be careful not to
use the IC in a way that would cause parasitic elements to operate. For example, by applying a voltage that is lower than the
GND (P-board) to the input terminal.

Resistor Transistor (NPN)


B

(Terminal A) (Terminal B) C E

N
GND (Terminal A)


P + P P+
P+ P P +

N N Parasitic element
N N N N
P-board Parasitic P-board GND
element
Parasitic GND
element

Fig.36 Simplified structure of a Bipolar IC

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© 2011 ROHM Co., Ltd. All rights reserved. TSZ02201-0Q1Q0AJ00170-1-2
19/20
TSZ22111・14・001 2012.08.03 Rev. 003
BD8316GWL Datasheet

●Ordering part number

B D 8 3 1 6 G W L - E2

Part No. Part No. Package Packaging and forming specification


GWL: USCP50L1 E2: Embossed tape and reel

●External information

1PIN MARK Lot No.

1.5±0.05
8316

1.8±0.05

UCSP50L1 (BD82103GWL)
(BD8316GWL)
1PIN MARK
<Tape and Reel information>
Tape Embossed carrier tape
1.5±0.05

Quantity 3000pcs
E2
0.55MAX
0.1±0.05

Direction
1.8±0.05 The direction is the 1pin of product is at the upper left when you hold
S
of feed
( reel on the left hand and you pull out the tape on the right hand )
0.08 S
0.35±0.05

11-φ0.2±0.05
0.05 A B A

(φ0.15)INDEX POST C B
B
A
P=0.4×2

1 2 3 4
1pin Direction of feed
0.3±0.05 P=0.4×3
(Unit : mm) Reel ∗ Order quantity needs to be multiple of the minimum quantity.

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© 2011 ROHM Co., Ltd. All rights reserved. TSZ02201-0Q1Q0AJ00170-1-2
20/20
TSZ22111・14・001 2012.08.03 Rev. 003
Datasheet

Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
intend to use our Products in devices requiring extremely high reliability (such as medical equipment , transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅡb
CLASSⅢ CLASSⅢ
CLASSⅣ CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.

7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.

Precaution for Mounting / Circuit board design


1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.

2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice - GE Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Datasheet

Precautions Regarding Application Examples and External Circuits


1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic


This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation


1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.

Precaution for Product Label


QR code printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition


When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act


Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.

Precaution Regarding Intellectual Property Rights


1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:

2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.

Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.

Notice - GE Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Datasheet

General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.

Notice – WE Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.

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