UNISONIC TECHNOLOGIES CO.

, LTD
UTF3055 Power MOSFET

N-CHANNEL ENHANCEMENT
MODE POWER MOSFET

„ DESCRIPTION
As an N-channel enhancement mode power MOSFET, the UTC
UTF3055 is designed for low voltage, high speed switching
applications in power supplies, converters and power motor controls
and bridge circuits.
„ FEATURES
* RDS(ON)<110 mΩ @VGS=10V
„ SYMBOL
2.Drain

1.Gate

3.Source

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
UTF3055L-AA3-R UTF3055G-AA3-R SOT-223 G D S Tape Reel
UTF3055L-TN3-R UTF3055G-TN3-R TO-252 G D S Tape Reel

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UTF3055 Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted)

PARAMETER SYMBOL RATINGS UNIT

Drain Source Voltage VDSS 60 V
Drain Gate Voltage (RGS = 10MΩ ) VDGR 60 V
Continuous ±20 V
Gate Source Voltage VGSS
Non-Repetitive (tP ≤10 ms) ±30 V
Continuous Drain Current (Ta = 25°C) ID 3.0 A
Pulsed Drain Current (tP ≤10 µs) IDM 9.0 A
Single Pulsed Avalanche Energy (Note 2) EAS 74 mJ
SOT-223 0.83
Power Dissipation (Ta = 25°C) (Note 3) W
TO-252 1.136
PD
SOT-223 14
Derate above 25°C mW/°C
TO-252 20
Junction Temperature TJ 175 °C
Strong Temperature TSTG -55 ~ +175 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ = 25°C ,VDD = 25V, VGS = 10V, IL = 7.0A, L = 3.0mH, VDS = 60V
3. When surface mounted to an FR4 board using 1″pad size, 1 oz.(Cu. Area 1.127 sq in ).

„ THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
SOT-223 150
Junction to Ambient (Note) θJA °C/W
TO-252 110
Note: When surface mounted to an FR4 board using 1″pad size, 1 oz.(Cu. Area 1.127 sq in ).

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UTF3055 Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain Source Breakdown Voltage (Note 1) VGS= 0V, ID =250µA 60 68 V
BVDSS
Temperature Coefficient (Positive) 66 mV/°C
Drain-Source Leakage Current IDSS VGS=0V, VDS=60V 1.0 µA
Gate-Source Leakage Current IGSS VGS = ±20 V, VDS =0V ±100 nA
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage VGS=VDS, ID =250µA 2.0 3.0 4.0 V
VGS(TH)
Temperature Coefficient (Negative) 6.6 mV/°C
Static Drain-Source On-State Resistance RDS(ON) VGS =10 V, ID =1.5A 88 110 mΩ
Static Drain-to-Source On-Resistance VDS(ON) VGS =10 V, ID =3A 0.27 0.40 V
Forward Tran conductance gFS VDS=8.0V, ID=1.7A 3.2 M
DYNAMIC PARAMETERS
Input Capacitance CISS 324 455 pF
Output Capacitance COSS VGS =0 V, VDS =25 V, f=1.0MHz 35 50 pF
Reverse Transfer Capacitance CRSS 110 155 pF
SWITCHING PARAMETERS (Note 2)
Turn-ON Delay Time tD(ON) 9.4 20 ns
Turn-ON Rise Time tR VGS=10V, VDD=30V, ID =3.0A , 14 30 ns
Turn-OFF Delay Time tD(OFF) RG =9.1Ω (Note 1) 21 45 ns
Turn-OFF Fall-Time tF 13 30 ns
Total Gate Charge QG 10.6 22 nC
VGS =10V, VDS =48V, ID =3.0A
Gate-Source Charge QGS 1.9 nC
(Note 1)
Gate-Drain Charge QGD 4.2 nC
Diode Forward Voltage VSD VGS=0V, IS=3.0A 0.89 1.0 V
tRR 30 ns
Body Diode Reverse Recovery Time tA VGS=0V, IS=3.0A, 22 ns
tB dI/dt=100 A/μs (Note 1) 8.6 ns
Body Diode Reverse Recovery Charge QRR 0.04 nC
Note: 1. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤2.0%.
2. Switching characteristics are independent of operating junction temperatures.

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UTF3055 Power MOSFET
„ TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Drain Current vs. Gate Threshold Voltage
Breakdown Voltage
300 300

250 250

200 200

150 150

100 100

50 50

0 0
0 20 40 60 80 100 0 0.5 1.0 1.5 2.0 2.5 3.0
Drain-Source Breakdown Voltage, BVDSS(V) Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)

Drain Current, ID (A)

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UTF3055 Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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