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Diode Questions (1)

The document discusses various concepts in electrostatics, including potential profiles, space charge, depletion due to sheet charge, and reverse leakage current in p-n junctions. It also compares ideal and non-ideal Schottky junctions, addressing Fermi level pinning and current components in forward bias. Key equations and principles related to semiconductor physics are presented throughout the text.

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0 views

Diode Questions (1)

The document discusses various concepts in electrostatics, including potential profiles, space charge, depletion due to sheet charge, and reverse leakage current in p-n junctions. It also compares ideal and non-ideal Schottky junctions, addressing Fermi level pinning and current components in forward bias. Key equations and principles related to semiconductor physics are presented throughout the text.

Uploaded by

jayeshjsrv
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Electrostatics

The potential profile across a device is shown above. The total space
charge inside the device is:

(a) Negative
 2 E 
 2    q  p  n  N d  N a 
x x 
(b) Zero R
  x
 E L  
R
dx

(c) Positive L

(d) No idea
Depletion due to a Sheet Charge

If the sheet charge density is -Q, the zero-bias


depletion width is given by:
a. There is no depletion
2  k BT  N D  
b. W   ln  
qN D  q  ni  
Q
c. W 
2 qN D
Q
d. W  What is the barrier-height/well-width?
qN D
X 2 ρ X 2
Depletion due to a Sheet Charge

Q  qN D X  X  Q qN D x

Em   qN D X 2

D  E  2 Em  qN a X  Q Whence? x

1  X qN D X 2 Q2
qVb  Em   
2 2 8 8 qN D x
Reverse Leakage Current – Charge Control Analysis

Consider a wide p-n junction. The approximate flux


of minority electrons that diffuse from the bulk of
the p-side to the depletion region per unit time is:

Dn ni2 Qn qn ni2 qa2 ni2 qDn ni2


a. J n  xP     
n N a n  n N a  n n N a n N a
2
Dn ni
b.
Wp N a
c. 𝑊 𝑛
, 𝑊 ≫𝜆
𝜏 𝑁
d. None of the above/no idea
Reverse Leakage Current – Charge Control Analysis

p n p n

Electrons Holes Electrons Holes


 x  xN   p
p N  x   p N 0  p N 0 (e
qV f kBT
 1)e qn qDn ni2
Jn  nP 0 
 p N  x   p N 0 (e
qV f kBT
 1)e
  x  xN   p n n N a

q   pN dx
Qp q p
J p  xN    pN  xN 
xN
 
p p p
q p pN 0
J p  xN  
p
e qV f kBT
1 
Ideal vs. Non-ideal Reverse Characteristics

Between Si (EG = 1.1 eV) and Ge (EG = 0.7 eV) which


one is expected to show characteristic (1) and which
one (4)?  vth N t  np  ni2 
Et  Ei  U 
n  p  2ni
2
Dn n i
n N a
Diode Reverse Leakage vs. Ohmic

Ohmic Diode Reverse Leakage


Quasi Fermi Levels in Forward Bias

dFn dFn Jn
J n  n n  
dx dx nn
n  e  x n  J n  e x n
dFn
  constant
dx
Quasi Fermi Levels in Depletion Region

dFn
J n  n n
dx
dFn Jn
 
dx n n
Current components in Forward Bias

J
? Jp ?

Jn

p 1 
    J p   G p  Rp 
t e

n 1 
   J n   Gn  Rn 
t e

 
Steady-state:  J  0
Current components in Forward Bias

p
Jp

n Jn

The majority current close to the junction is:


a. Dominated by diffusion

b. Dominated by drift

c. A mix of drift and diffusion

d. This cannot be determined analytically


Ideal Schottky Junction

Consider an ideal metal-semiconductor junction.


 s  4.8eV E g  1eV  s  4eV  m  4.3eV
Draw the band diagrams: in equilibrium, small ± bias.
EC
EC
EC

EF EV
EV
B EV
Non-ideal Schottky Junction – Fermi Level Pinning

Consider M-S junction, with Fermi-level pinning (no


modulation of potential with workfunction) at VB.
 s  4.8eV E g  1eV  s  4eV  m  4.3eV

Draw the band diagram in equilibrium. How is the band-


bending related to the initial difference in Fermi levels?

EC

EF
EV
Non-ideal Schottky Junction – Fermi Level Pinning

Effective
EC

CL=εL/tL CR=εR/tR
EF
+
EV +
+

+ +
-Q Q.CL/(CL+CR) + Q.CR/(CL+CR)
EC -Q
EC

EF
EF
EV
EV

‘Actual’ Ideal
VBR vs. doping

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