Proceedings (Hardcopy): ISSN 2309-0545

Proceedings (Electronic): ISSN 2309-0553

ICTPE-2024
CONFERENCE PROCEEDINGS
The 20th International Conference on

Technical and Physical Problems of Engineering

31 October 2024
International Organization of IOTPE
Institute of Physics
Taba Elm International Institute
Ministry of Science and Education
Tabriz, Iran
Baku, Azerbaijan
www.tabaelm.com
www.physics.gov.az
Azerbaijan Research Institute of
Seraj Higher Education Institute
Energetics and Energy Design
Tabriz, Iran
Azerenerji JSC, Baku, Azerbaijan
www.seraj.ac.ir
www.azenerji.com/en/about/pei.html
Cleaner Production and
Gazi University
Energy Efficiency Center
Ankara, Turkey
Baku, Azerbaijan
www.gazi.edu.tr
http://cpee.az

Istanbul Technical University Nakhchivan State University

Istanbul, Turkey Nakhchivan, Azerbaijan
www.itu.edu.tr www.ndu.edu.az

Isik University University of Pitesti

Istanbul, Turkey Pitesti, Romania
www.isikun.edu.tr www.upit.ro

Van Yuzuncu Yil University University of the Basque Country

Van, Turkey Bilbao, Spain
www.yyu.edu.tr www.ehu.es

Istanbul Rumeli University Near East University

Istanbul, Turkey Lefkosa, Northern Cyprus
http://rumeli.edu.tr www.neu.edu.tr

Ostfold University College

Fredrikstad, Norway
www.hiof.no
 The 20th International Conference on “Technical and Physical Problems of Engineering” (ICTPE-2024)

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 The 20th International Conference on “Technical and Physical Problems of Engineering” (ICTPE-2024)

14 01PES14 EXTRA HIGH VOLTAGE ON OVERHEAD POWER LINES 76-82

E.S. Safiyev, S.Y. Shikhaliyeva

15 01PES15 OPTIMAL NAVIGATION OF AN ELECTRIC VEHICLE IN SMART GRID BY 83-92

CONSIDERING CONVENTIONAL, RENEWABLE AND MOBILE CHARGING
STATIONS ACCORDING TO RANDOM LOCATION
J. Ahmadyousefi, M. Rashidinejad, A. Abdollahi, P. Eslami, M. Mohammadiam

16 01PES16 RESEARCH INTO INFLUENCE OF BOOST CONVERTER PARAMETER ON 93-101

MICROGRID STABILITY
I. Ivanov, D. Kotin

17 01PES17 AN IMPROVED SINGLE-PHASE H-BRIDGE INVERTER FOR RENEWABLE 102-110

ENERGY APPLICATIONS
Z.M. Nur, S.N. Tackie

18 01PES18 VARIABLE PHASE INPUT/OUTPUT CONVERTER BASED ON MATRIX 111-121

CONVERTER
M.O.A. Salih, S.N. Tackie

No Code 2. ELECTRONICS (02ELC) Pages

19 02ELC01 EXCITATION OF UNSTABLE WAVES IN TWO-VALLEY SEMICONDUCTORS 122-127

OF TYPE GaAs
E.R. Hasanov, S.G. Khalilova, R.K. Mustafayeva

20 02ELC02 INFLUENCE OF ANNEALING TEMPERATURE ON ELECTROPHYSICAL 128-135

CHARACTERISTICS OF COMPOSITES BASED ON POLYMER AND
NANOPARTICLES OF SOLID SOLUTION TYPE CoFe2O4
A.G. Huseynova, T.K. Nurubeyli, D.A. Ahmedova, S.A. Huseynova, Z.A. Taghiyeva,
V.M. Hajiyeva, S.S. Ahadova

21 02ELC03 THERMOIONIZATION-FRENKEL EFFECT IN SEMICONDUCTOR-POLYMER 136-141

COMPOSITE VARISTORS
S.M. Ahadzade, A.Y. Imanova, T.K. Nurubeyli, K.A. Asgarov

22 02ELC04 OPTICAL ABSORPTION SPECTRA OF PbS AND PbS0.5Se0.5 THIN FILMS 142-146
OBTAINED BY CBD METHOD
S.I. Mehdiyeva, M.H. Huseynaliyev, S.N. Yasinova, A.M. Garayev, A.H. Sultanova

23 02ELC05 A STUDY OF USING DIFFERENT PRINTED CIRCUIT BOARD DESIGN 147-152

METHODS ON ETHERNET SIGNALS
B. Kanal, N. Akcam

24 02ELC06 A UNIVERSAL METHOD FOR IMPROVING THE ACCURACY OF ICP-MS 153-159

RESULTS
T.K. Nurubeyli, A.M. Hashimov, N.S. Jafar, K.Z. Nuriyev, G.N. Mammadova,
S.I. Hasanova, K.N. Ahmadova, E.G. Tagiyeva

25 02ELC07 MANUFACTURING AND STRUCTURAL STUDY OF AL AND Fe3O4 THIN FILMS 160-164
K.N. Ahmadova, S.H. Jabarov, T.K. Nurubeyli

No Code 3. CONTROL AND COMMUNICATIONS (03CCE) Pages

II
 The 20th International Conference on
ICTPE Conference
“Technical and Physical Problems of Engineering”
www.iotpe.com
31 October 2024 [email protected]
International Organization of IOTPE [email protected]

ICTPE-2024 Number 19 Code 02ELC01 Pages 122-127

EXCITATION OF UNSTABLE WAVES IN TWO-VALLEY

SEMICONDUCTORS OF TYPE GaAs
E.R. Hasanov 1,2 S.G. Khalilova 2 R.K. Mustafayeva 1
1. Baku State University, Baku, Azerbaijan, [email protected], [email protected]
2. Institute of Physics, Ministry of Science and Education, Baku, Azerbaijan, [email protected]

Abstract- In double-valley semiconductors of the GaAs This leads to the appearance of negative differential
type, under the influence of external electric E0 and resistance. Since the time constant in this case is on the
  order of 10-11 seconds, the negative resistance is
magnetic fields H 0 at certain orientations E0 and H 0 , a maintained up to very high frequencies. Later, the
current oscillation with a certain frequency and growth phenomenon of the occurrence of electrical oscillations
increment is obtained. The orientation of electric and associated with the movement of domains in such a
magnetic fields plays a significant role in the excitation of semiconductor in a strong electric field was
rising waves in GaAs-type semiconductors. Analytical experimentally discovered by Gunn [3] and was called
expressions are obtained to determine the values of the the Gunn effect [3]. A lot of research has been done.
electric and magnetic fields. The frequencies and Soviet scientists made a significant contribution to the
increments of growth when excitation of current creation of the theory of the Gunn effect [4, 5].
oscillations in the circuit are determined. The dimensions The generation frequency in a Gunn diode is
of the crystal are determined by Lz >> Lx , Ly , Lx = Ly . If determined by the time it takes for the domain to travel
the dimensions of the sample differ from the condition from the point of formation to the corresponding contact.
Lz >> Lx , Ly , Lx = Ly , the growing waves may attenuate Since the domain is usually formed at the cathode, this
time is equal to the time it takes for the domain to pass
or grow. And at the same time, the frequency of increase through the sample. The speed of the domain is about 107
of the oscillation and the value of the electric and
cm/sec, therefore, with a sample thickness of 10 microns,
magnetic fields will be different. The magnetic field
the transit time will be about 10-10 sec, and therefore the
value in valley “a” is strong, i.e. µa H 0 >> c , and in the
generated frequency is about 10-10 GHz [4].
valley “b” is weak, i.e. µb H 0 < c . If the magnetic field However, a slightly different generation mechanism is
value in the valleys “a” and “b” are strong, then also possible, allowing one to obtain higher-frequency
electromagnetic waves with other frequencies will also be oscillations. This mechanism is not directly related to the
excited. The theory for other values of the magnetic and time it takes for the domain to pass through the entire
electric fields and, of course, for other values of the sample. Since the domain is not formed instantly, but in a
crystal size will show other values for the frequency and time of about 10-10 seconds, using an external resonator
growth rate. with a sufficiently high impedance, it is possible to
prevent its complete formation. As soon as the domain
Keywords: Unstable Waves, Fluctuations, Gunn Effect, begins to form, it immediately becomes an active element
External Electric Field, Semiconductor, Magnetic Field. of the circuit, capable of delivering power to an external
load. If the load is large enough or large enough, then the
1. INTRODUCTION
voltage across the semiconductor begins to decrease and
A more interesting mechanism for the emergence of
falls below the threshold value at which the existence of a
negative differential resistance in the bulk of a
domain is possible. Then the domain begins to dissolve,
semiconductor was proposed by Ridley and Watkins [1]
and independently by Hilsum [2]. These authors drew and the resistance of the semiconductor decreases. At
attention to the fact that for n-type gallium arsenide, in some point, the voltage on it again becomes higher than
the conduction band of which there are two minima (or critical and the formation of a domain begins again, and
valleys), in the upper minimum the mobility of carriers is so on. This mode is called the limited space-charge
much less than in the lower one. For this reason, during accumulation mode (LSA). The frequency is determined
field heating of an electron gas, the mobility of electrons by the characteristics and size of the crystal. Therefore, in
begins to drop sharply as soon as their energy is sufficient this mode it is much easier to achieve high generation
to transition to the upper minimum. frequencies than in conventional Gunn diodes [3, 4].

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31 October 2024

The discovery of the Gunn effect in 1963 stimulated intensive research into this effect in many countries
around the world. At the same time, many companies movement of which will then be supported in the average
began to develop serial samples of high-frequency field [11]. Thus, the measured values EТ , depending on
oscillation generators based on this effect, and already in the degree of field inhomogeneity, can range from Eс to
1966, “International Semiconductor” (USA) launched
Gunn generators with a generation frequency of 2-3 GHz field Es , requiring a fully formed domain to maintain
and a continuous power of 50-70 mW on the market [6, movement. The instability may be localized in some
7]. region of the crystal, although if the extent of this region
It is currently accepted that the Gunn effect [8] in n- is too small, the field distribution will be distorted,
type GaAs is due to the volumetric negative resistance forming a new stable configuration [12, 13, 14]. In most
arising as a result of the induced action of the electron samples, due to heterogeneity, the value of EТ is lower
transfer field from the conduction band valley with high than the value of Es .
carrier mobility to the valley with low mobility, i.e. is an
The conversion of electromagnetic energy using
effect whose existence was previously predicted by
semiconductors has practical and theoretical interest.
Ridley and Watkinson [1] and Hilsum [2]. The main
Therefore, the mechanisms responsible for the occurrence
confirmation of this mechanism is a decrease in the
of current fluctuations in the image were studied in
threshold electric field when the energy gap is placed
various experimental and theoretical works. The
between the valleys with high and low carrier mobility,
dependence of the current density ( j ) on the external
caused either by uniform compression [9], or changes in
GaP concentration in GaAs-GaP alloys [10]. The various electric field E of a type semiconductor has the form
characteristics of the Gunn effect identified by threshold GaAs.
field researchers are consistent with a two-valley Characteristic features are that one current density
mechanism. value corresponds to several electric field values. Peishi
Typical current-voltage characteristics for a plate and S. and co-authors have worked out the high-field drift
a notched sample made from the same ingot velocity and hot-electron PSD in GaAs from first
principles and have found that on-shell 2ph processes
n 4.6 × 1015 cm-3
(= and µ = 3750 cm 2 /Vsec) are
play a fundamental role in all aspects of high-field
presented in the Gunn experiment. In both cases, transport, including energy relaxation and intervalley
instability appears or disappears very abruptly, and no scattering. Their work demonstrates that the ab initio
hysteresis phenomena were observed with changes in V. computation of high-field transport and noise properties
The plate characteristic deviates significantly from the may provide considerable insight into the e-ph interaction
ohmic one, apparently due to a decrease µ L with in semiconductors [7]. In valleys “a” and “b” the
increasing E . In the case of notched samples, any effective mass of electrons is [4].
curvature of the characteristic is masked by the series ma = 0.072m0 , mb = 1.2m0 (1)
resistance of the outer regions. where, m0 is mass of a free electron. In GaAs
The measured values of the threshold field EТ for
∆ =0.36eV . Based on (1), the mobility of electrons in
plate and notched samples with a thickness of 0.025 cm the corresponding valleys satisfies the condition [4].
were almost the same: 2130 ± 100 V/cm for the first and µa >> µb (2)
2440 ± 120 V/cm for the second. This indicates that the
In 1963, the English scientist Gunn experimentally [1]
instability is mainly a volume effect and is not related in discovered current oscillations in GaAs with a Hertz
any significant way to the contacts, although the always
slightly lower value for plates indicates that in plate frequency ω ~ 109 in fields E ~ 3 × 103 V/sm . This
samples the domains become infected in the high-field effect was called the Gunn effect. Microscopic theories of
region near the cathode. The value of the threshold the Gunn effect have been developed in several
speeds ϑT , determined either by the magnitude EТ or by theoretical works. However, the frequency of current
oscillations in calculations and the critical values of the
the threshold current density JT , is mutually consistent electric field obtained in these theoretical works
and for the above-mentioned samples they are 9.15 × 106 correspond approximately to the experimental values.
and 9.24 × 106 cm/sec . Such agreement was observed, as In some theoretical works, using the Boltzmann
kinetic equation, the mean free path of charge carriers
a rule, for all samples except those that were shorter than
was calculated. Also, analytical expressions for the
approximately 0.025 cm.
electric field were obtained. In this electric field current
In an ideal homogeneous sample EТ , the value
oscillations in double-valley semiconductors of the GaAs
should be equal to Eс the field corresponding to the type are began. Conductivities in both zones in the
maximum velocity ϑс . In real samples, inhomogeneities presence of an external magnetic field were also
in the distribution of impurities can easily lead to field calculated. However, in this theoretical work we have
fluctuations of two to three times or even more over calculated the frequencies of current oscillations in two-
several microns near the electrodes or in the bulk. valley semiconductors, taking into account the transition
Therefore, a moderate average field can locally reach a time between two valleys, and we will calculate the
values of these times depending on the size of the GaAs
value Eс , causing the nucleation of a domain, the

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31 October 2024

type semiconductor. Current fluctuations begin at certain appears inside the sample are small compared to the
values of external electric and magnetic fields. For constant thermodynamic values of the electric and
electric and magnetic fields, we will clear the analytical magnetic fields and carrier concentrations.
expressions at which the current oscillation begins in the Choosing a coordinate system
   
semiconductor. =E iE = ,H iH 0 0x 0 0x
from (6) we easily obtain
2. BASIC EQUATIONS OF THE PROBLEM
In the Gunn effect experiment in two-valley GaAs ′ =
jax (σ a + σ 2a H 0 x ) Ex′ − σ1a H ox Ez′ (9)
semiconductors, the electron concentration is constant, σ c
and therefore [3, 4]. jay
ω
( )
′ =σ a E y′ + 1a k y − k x E y′ + σ 1a H ox E z′ +
(10)
na = na0 + na′ , nb = nb0 + nb′ (3) 2σ cE H
+ 2 a ox ox ( k z Ex′ − k x Ez′ )
The transition between valleys occurs under the ω
condition σ c
na′ = −nb′ (4) ′ =
jaz σ a Ez′ + 1a ( k z Eox Ex′ − k x Eox ) Ez′ −
ω (11)
The transition times τ12 and τ 21 between valleys are 2σ 2 a cEox H ox
determined by the continuity equations −σ 1a H ox E y′ +
ω
(
k z E y′ − k y Ex′)
∂na′ na′ ∂nb′ nb′    
+ divj=a′ , b′
+ divj= (5) From (6)= at E0 iE = 0x , H0 iH 0 x , provided that the
∂t τ12 ∂t τ 21
corresponding components of the current density in the
The current flux densities in the presence of an valleys “a” and “b” have the form (10-11), and in the
external magnetic field are determined by Equation (6) valley’s “b” the corresponding values (9, 10, 11) have the
[3, 4]. same form when replacing “a” to "b". The experiment
    
ja = σ a E + σ1a  EH  + σ 2 a H  EH  measures current densities in different directions. We will
     (6) write expressions for the fluctuation current density in the
jb =+ σ b E σ1b  EH  + σ 2b H  EH  direction of the X axis, equating (10-11) to zero, find E y′
In (6) we consider the condition eE0 l >> k0T for the and E z′ , and substituting in (9).
electric field (where e is the elementary charge, E0 is the  σ1ayσ za − σ1aσ1az 
electric field at environmental equilibrium, k0 is ′
jax =  σ a + σ 2a H 0 x + a a  E′
a  x
 σ σ − σ a
σ
Boltzmann’s constant, T is the temperature of the  1 y 2 z 2 y 1 z 
(12)
sample). Therefore, there are no diffusion terms for the  b b b b
σ 1 yσ z − σ 1z σ 1 
current density. The magnetic field is determined by ′ =
jbx  σ b + σ 2b H 0 x + b b  Ex′
 σ1 yσ 2 z − σ 2b yσ1bz 
Maxwell's equation; 

∂H  The current densities along the X and Z axes, of
= −crotE (7) course, have certain values; following experiment, we
∂t
consider them equal to zero, i.e. j= x j=
y 0 . Therefore,
Electrical conductivities σ a , σ 1a , σ 2 a , σ b , σ 1b , σ 2b
were calculated in [15-20]. the values of the corresponding electrical conductivities
σ a is electrical conductivity in valley “a” have the following form;
σ 1a ,b c 2σ 2 a ,b cEox
σ 1a is hall electrical conductivity in valley “a” σ 1ay,b =+ σ a ,b
ω
( )
k y − k x , σ ya ,b =
ω H0x
kz
σ 2a is focusing electrical conductivity on valley “a”
2σ E c
σ b is electrical conductivity in valley “b” σ 2ay,b σ1,a ,b k x − 2 a ,b ox k x
=
ω H0x
σ1b is hall electrical conductivity at valley “b”
σ1a ,b ck z Eox 2σ 2 a ,b cEox
σ 2b is focusing electrical conductivity on valley “b” = σ za ,b − ky
ω H0x ω H0x
(13)
3. THEORY a ,b 2σ 2 a ,b Eox c
By solving systems of Equations (5, 6, 7) taking into
= σ 1 z , a ,b k x + σ 1, a ,b
ω H0x
account (3, 4), frequencies of current oscillations in two-
valley GaAs semiconductors are determined. For small σ ck E 2σ cE
  σ 2 za ,b = σ a ,b − 1a ,b x ox − 2 a ,b ox k y
values of physical quantities, E, H , n i.e. ω H0x ω H0x
      From (5) is gotten;
E= E0 + E ′, H = H 0 + H ′, n = n0 + n′ determine the
frequencies of current oscillations;
(1 − iωτ 21 ) divjax ′ = (1 + iωτ12 ) divjbx′ (14)
  
i ( kr −ωt ) Considering µa H ox > c and choosing sample’s sizes
( )
E ′, H ′, n′ ~ e (8) as;
The fluctuation values of the electric and magnetic = Lx Ly , Lz >> Lx , Ly (15)
fields and charge carrier concentrations when a current

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31 October 2024

The dispersion equation under the above conditions 27τ12ω x 2  20τ ω µ2 

(15) has the following form: 4 x03 x1 + 5 x03 − x0 x1 + 2  12 x + 12 b2  x0 x1 +
5  φ µa 
µ  µ   a
(20)
τ 21 a ϕa3ω 4 +  i a ϕa3 − 10τ12ω xϕa3 − 3τ12ω xϕa2  ω 3 −
µb  µb2  2 µb
 µb  +  24 + 60τ12ω x 2  x1 − x0 − 48 =
0
 µa  µa
 µ µ 
−  i 6ϕa2 b + 3τ 21ω xϕa2 a + is gotten.
 µa µb
Then, after separating the real and imaginary parts of
µ 4µ equation (18), we obtain the following two equations (19-
+4τ 21ω xϕa2 b − i3ϕa2 + τ12ω xϕa2 b +
µa µa 20). When obtaining (19)-(20), we assumed for the
transition times from valley “b” to valley “a” from the
12µa 18µb  condition;
+ τ 21ω xϕa − i3ϕa + τ12ω xϕa2 2
 ω xω +
µb µa  τ 21ω x = 5 (21)
µb2 µ From joint (19)-(20) the real and imaginary parts of
(
+ iϕa3 4 − 3τ 21ω xϕa − i32ϕa
µa2
− 24τ12ω xφa2 b −
µa the frequency oscillations are obtained as follows;
(16) 9
µ 24µa µ  x0 = τ12ω x (22)
−i 2 a ϕa2 + τ 21ω x −4ixϕa2 b − 12τ12ω xϕa2  ω x2ω − 5
µb µb µa  was obtained.
µa  µa 3 µ  µ 3
−8τ 21ω x4ϕa3− i  ϕa 48 − 12ϕa3 b  × 12ϕa3 a × 47 =
0 x1 = τ12ω x
µb  µb µa  µb 20

µ H was obtained Comparing (22) and (23);

where, ϕa = a ox , ω x = ck x . 1
c
τ12  2  3 1
For the electric and magnetic field values, the =   << 1
following values were used: τ 21  27  2
µ 2 c was gotten. This indicates that the time of transition from
E0 = 2 H 0 b , H 0 = (17) valley “a” to valley “b” is less than the time of transition
µa 3 µ a µb from valley “b” to valley “a”. Thus, the frequency of
ω current oscillation;
where, x= was denoted. Then the dispersion 9
ωx ω0 = τ12ω x2 , slew frequency
equation of the fourth order with respect to the 5
frequencies of current oscillations has the following 3
ω1 = τ12ω x2
algebraic form: 20
 i 9τ   6  µ 3 We will construct a theory when equality (22) is
x4 +  − 12  x3 +  
b
 − satisfied. With a different value τ 21 , the frequency and
τ ω
 21 x τ 21  τ ω µ
 21 x  a 
 slew rate will have a completely different meaning.
2
3 µb 4τ12  µ  2τ µ 
−i + + 12  b  + 12 b  x 2 + (18) 4. DISCUSSION
φa µa τ 21φa  µa  τ 21 µa  Thus, the conditions for excitation of growing waves

2
in double-valley semiconductors significantly depend on
 τ µ   the choice of coordinate systems relative to external
+  24 − 12 12  b   x − 8τ 21ω x − i 48 = 0
 τ 21  µa   electric and magnetic fields. Of course, these conditions
  depend on size of sample. The resulting analytical formulas
is gotten. for electric and magnetic fields correspond to Gunn's
Solving this equation in the general case (i.e., without experiment. Time of transition from the second valley to
an assumption is not possible). Therefore, we will use the 1 1 Lx
conditions = x x0 + ix1 and x1 << x0 from (18). τ 21 = =
the first valley = for τ 21 ~ 10 .
5ω x 5ck x 10cπ
Assuming = x x0 + ix1 and x1 << x0 from (18). The characteristic time of transition from “a” to “b”
9τ12ω x 3  20τ12ω x µ2  2 and from “b” to “a”, in addition to the indicated values,
x 4 − 15 x0 x1 − x0 +  + 12 b2  x0 + other values may be obtained. However, the condition
5  φ µa
 a  τ 21 ~ τ12 is not violated when obtaining current
(19)
 µ2  2µ 8 fluctuations in these semiconductors. The orientation of
+  24 + 60τ12ω x b2  x0 + b x1 − =0
 µ  µ 5 the electric and magnetic field plays a role in producing
 a  a
the corresponding oscillations. Of course, from all
and
possible orientations, you need to choose the orientation
for which a value less than the external electric field is
required.

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This means that the directions of the magnetic and [8] J.B. Gunn, “Instabilities of Current in III-V
electric fields coincide and are directed along the electric Semiconductors”, IBM Journal of Research and
field and the excitation of current oscillations occurs as in Development, Vol. 8, pp. 141-159, 1964.
Gunn’s experiment. To reduce the electric field, you need [9] M.O. Vassel, E.M. Conwell, “High-Field Electron
 
to check other orientations E0 and H 0 . For the Distribution in GaAs, Physics Letters”, Vol. 21, Issue 6,
preparation of corresponding devices based on GaAs-type pp. 612-614, 1966.
semiconductors, it is practically advantageous to use [10] I.B. Bott, W. Fawcett, “The Gunn Effect in Gallium
lower values of the external electric field. Arsenide, Advances in Microwaves”, Vol. 3, pp. 223-
300, 1968.
5. CONCLUSIONS [11] M. Shur, “Ridley-Watkins-Hilsum-Gunn Effect,
Analytical formulas are obtained for the purity of GaAs Devices and Circuits, Microdevices, Physics and
excited waves and for the growth rate of these waves. The Fabrication Technologies”, pp. 173-250, 1987.
dependence of the frequency and increment of the rising [12] W. Heinle, “Basic Equations of Gunn Domain
wave on external electric and magnetic fields is not the
Dynamics”, Physics Letters A, Vol. 24, Issue 10, pp. 533-
only one for obtaining a rising wave in these
535, 1967.
semiconductors. The resulting shapes for the electric and
magnetic fields are quite consistent with Gunn's [13] N. Ki ichi, “Statistical Dynamics of the Gunn
experiment. Experimental data on the Gunn effect for the Instability Near Threshold”, Journal of Physics Society of
electric field are in good agreement with our theoretical Japan, Vol. 38, pp. 46-50, 1975.
studies for the electric field. However, there are no [14] B.K. Ridley, “The Inhibition of Negative Resistance
experimental values of the magnetic field and therefore Dipole Waves and Domains in n-GaAs, IEEE Trans.
the magnetic field values we obtained theoretically were Electron Devices”, Vol. 13, pp. 41-43, 1966.
not compared with experimental data. Numerical [15] E.R. Hasanov, S.G. Khalilova, G.M. Mammadova,
estimates of the transition times from valley “a” to valley E.O. Mansurova, “Excitation of Unstable Waves in
“b” are of the order of the electron relaxation time. The Semiconductors Such as GaAs Magnetic Fields”,
value of the transition time from valley “a” to valley “b” International Journal on Technical and Physical Problems
and back, depending on the value of the external electric of Engineering (IJTPE), Issue 55, Vol. 15, No. 2, pp.
and magnetic fields, may be different. However, in all 302-306, June 2023.
cases, the time of transition from valley “b” to valley “a” [16] E.R. Hasanov, S.G. Khalilova, R.K. Mustafayeva,
is greater than the time of transition from valley “a” to
“Instability in Two GaAs Valley Semiconductors in
valley “b”, i.e. τ 21 > τ12 . This condition proves that
Electric and Magnetic Fields”, The 17th International
charge carriers (in this case electrons) are scattered by the Conference on Technical and Physical Problems of
crystal lattice, lose energy and move from the outer Engineering (ICTPE)”, pp. 60-63, Istanbul, Turkey, 18-
energy valley to the lower valley.
19 October 2021.
[17] E.R. Hasanov R.K. Mustafayeva, S.G. Khalilova,
REFERENCES
[1] B.K. Ridley, T.B. Watkins, “The Possibility of Instability in Two GaAs Valley Semiconductors in
Negative Resistance Effects in Semiconductors”, Proc. Electric and Magnetic Fields International Journal on
Phys. Soc. Vol. 78, pp. 17-36, 1961. Technical and Physical Problems of Engineering (IJTPE),
[2] C. Hilsum, “Transferred Electron Amplifiers and Issue 50, Vol. 14, No. 1, pp. 228-232, March 2022.
Oscillators”, Proceedings of the IRE, Vol. 50, Issue 2, pp. [18] E.R. Hasanov, Sh.G. Khalilova, G.M. Mammadova,
185-189, 1962. R.K. Mustafayeva, “Excitation of Unstable Waves in
[3] J.B. Gunn, “Current Instabilities and Potential Two-Valley Semiconductors of The GaAs Type in
Distribution in GaAs an InP, Plasma Effects in Solids”, External Electric and Magnetic Fields”, International
pp.199-207, Paris, France, 1964. Conference on Molecular Spectroscopy, pp. 3-6, Baku,
[4] H. Steinruck, P. Szmolyan, “Analysis of the Gunn Azerbaijan, 2022.
Effect, Conference Paper”, The IMA Volumes in [19] E.R. Hasanov, Sh.G. Khalilova, G.M. Mammadova,
Mathematics and its Applications, Vol. 59, pp. 377-388, A.I. Alakbarov “The Frequency of Current Fluctuations
1994. in Two-Valley Semiconductors in An External Electric
[5] V.L. Bonch Bruevich, Sh.M. Kogan, “Sovet Physics”,
and Strong Magnetic ( µ H > c ) Fields”, Fields XV
Solid State, Vol. 7, No. 15, p. 23, 1965.
[6] M.P. Shaw, H.L. Grubin, P.R. Solomon, “Gunn- Russian Conference on Semiconductor Physics
Hilsum Effect Electronics”, Advances in Electronics and (Semiconductors-2022), p. 249, Russia, 3-7 October,
Electron Physics, Vol. 51, pp. 309-433, 1980. 2022.
[7] S. Peishi Cheng, J. Sun, S. Ning Sun, A.Y. Choi, A.J. [20] E.R. Hasanov, Sh.G. Khalilova, “Instability in
Minnich, “High Field Transport and Hot Electron Noise Multi-Valley Semiconductors in External Electric and
in GaAs from First Principles: Role of Two-Phonon Magnetic Fields”, Bulletin Kazakhstan, No. 2, Vol. 110,
Scattering”, Physical Review B, Vol. 106, Issue 24, pp. Physics Series, pp. 66-70, Kazakhstan, 2023.
1-35, 2022.

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BIOGRAPHIES University, Baku, Azerbaijan, 2003

Master: Department of Physics, Faculty of Physics, Baku
Name: Eldar State University, Baku, Azerbaijan, 2005
Middle Name: Rasul Doctorate: Institute of Physics, Baku, Azerbaijan, 2016
Surname: Hasanov The Last Scientific Position: Assist. Prof., Leading
Birthday: 13.01.1939 Researcher, Institute of Physics, Baku, Azerbaijan, 2006
Birthplace: City, Country Research Interests: Physics of Solids, Classical
Master: Department of Physics, Faculty Mechanics, Thermodynamics and Statistical Physics,
of Physics, Azerbaijan State University, Physics of Low-Dimensional Systems
Baku, Azerbaijan, 1964 Scientific Publications: 100 Papers, 5 Projects, 26 Theses
Doctorate: Department of Physics, Faculty of Physics,
Institute of Physics and Technology, Leningrad, Russia, Name: Ruhiyya
1967 Middle Name: Karam
The Last Scientific Position: Prof., Department of Surname: Mustafayeva
Physics of Solids, Baku State University, Baku, Birthday: 05.02.1977
Azerbaijan - Leader of Department of Encyclopedia and Birthplace: Baku, Azerbaijan
Terminology, Institute of Physics, Baku, Azerbaijan, Bachelor: Department of Physics,
Since 2000 Faculty of Physics, Baku State
Research Interests: Physics of Solids, Classical University, Baku, Azerbaijan, 1998
Mechanics, Thermodynamics and Statistical Physics, Master: Department of Physics, Faculty of Physics, Baku
Physics of Low-Dimensional Systems State University, Baku, Azerbaijan, 2000
Scientific Publications: 270 Papers, 3 Books Doctorate: Institute of Physics, Baku, Azerbaijan, 2010
The Last Scientific Position: Head Teacher, Department
Name: Shahla of Physics of Solids, Baku State University, Baku,
Middle Name: Ganbar Azerbaijan, 2018
Surname: Khalilova Research Interests: Physics of Solids, Classical
Birthday: 18.11.1977 Mechanics, Thermodynamics and Statistical Physics,
Birthplace: Baku, Azerbaijan Physics of Low-Dimensional Systems
Bachelor: Department of Physics, Scientific Publications: 59 Papers, 12 Theses
Faculty of Physics, Baku State

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