Scribd
Upload
13 views

Lecture 16 Chex42

Lithography is a technique for transferring two-dimensional patterns onto substrates, primarily using photoresists and photolithography with ultraviolet radiation. The process involves applying a uniform layer of photoresist through spin coating, which requires careful control of various parameters to achieve the desired thickness. Future advancements in lithography may utilize x-rays, electrons, or focused ion beams to enhance patterning capabilities in integrated circuit manufacturing.

Uploaded by

amwatsimeshack
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
13 views

Lecture 16 Chex42

Lithography is a technique for transferring two-dimensional patterns onto substrates, primarily using photoresists and photolithography with ultraviolet radiation. The process involves applying a uniform layer of photoresist through spin coating, which requires careful control of various parameters to achieve the desired thickness. Future advancements in lithography may utilize x-rays, electrons, or focused ion beams to enhance patterning capabilities in integrated circuit manufacturing.

Uploaded by

amwatsimeshack
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 15

Lithography

! Lithography is the process of transferring two dimensional patterns


(e.g., a circuit pattern) on a mask to an underlying film or substrate.
! Most often the mask is a light sensitive polymer which allows the
patterns to be transferred onto the polymer film. Such a light
sensitive polymer is called a photoresist.
! Photolithography uses ultraviolet radiation from a Hg light source
(now we use excimer lasers) to transfer the pattern from the mask to
the photoresist and is the dominant technology in IC fabrication
today.
! Future generations of lithography make use of x-rays, electrons or
focused ion beams instead of photons (light).
Patterning thin films by Lithography
Lithography is used many times in IC manufacturing and
complexity of the IC is measured in “mask levels”
Application of photoresist
! Photoresist are high molecular weight polymers dissolved in organic
solvents
! The goal in applying the photoresist is to obtain uniform, adherent,
defect free polymeric film over the entire substrate. Uniformity must be
± 5 nm.
! The polymer solution is spin coated. Spin coating is acoplished by
flooding the substrate surface with the resist solution and rapidly
roatating it at constant speed. ω ~ 1000-10,000 rpm.
! First the substrate is cleaned. Contaminated substrate surface is a
source of problems. Contamination causes poor adhesion and particles
cause “comet tail” defects.
! Polymer must be compatible with the substrate surface for good
adhesion. Sometimes adhesion promoters such as
Hexamethyldisiloxane (for Si substrates) are used.
Spin coating
! Consists of 4 steps
1) Flooding the substrate with the resist solution.
2) Accelerating to the desired rotation speed.
3) Spinning at constant speed to near dryness.
4) Remove the edge bead.
! The solvent evaporates as the substrate is spinning and the solution is
spreading on the substrate.
! Thickness t is a function of ; t = f(ω,c,η,solvent, environmental factors)
ω = spin speed
c = polymer concentration in solvent
η = polymer viscosity
Photoresist Spinning
Spin coating

! For a given system of polymer and solvent t = f(ω) only.


k
t = α α ≈1/ 2
ω
! If polymer concentration increases k is increased k=k’cβ.
! Similarly s a function of viscosity k increases k=k’’ηγ.
! Combining these gives
c βη γ
t=K α
ω
! For a given photoresist system this data would be supplied by the
photoresist supplier.
Thickness t is a function of ω = spin speed
c = polymer concentration in solvent
Thickness as a function of the viscosity
Spin coating
! Solvents: Most spinning solvents are based on esters of ethyleneglycol
(Cellosolve, Cellosolve acetates). But these are carcinogens. There has been
a switch to esters of linear high molecular weight acids.
! Criteria for choosing solvents:
1) Polymer must have a large radius of gyration (Rg) in the solvent. Radius
of gyration is the mean square end to end distance. Larger the Rg, the
more extended the polymer is and the better it is for spinning. If Rg is
small, the polymer eventually becomes immiscible and precipitates.

Rg Rg
2) Polymer must remain in solvent in the entire spinning process otherwise
aggregation leads to pinholes and opaque spots. As solvent evaporates c
and η increase. Solvent volatility must be low enough that c and η do not
change rapidly during spinning.
Three methods of “printing”
Contact & Proximity printing
Step Scan
E-beam lithography E=hν=hc/λ
Evolution of Lithographic methods

You might also like