TYPICAL PERFORMANCE CURVES 600V

APT100GT60JR

® APT100GT60JR

E E
Thunderbolt IGBT® 7
G C - 22
The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch S OT
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed. "UL Recognized"
ISOTOP ® file # E145592

• Low Forward Voltage Drop • High Freq. Switching to 80KHz

• Low Tail Current • Ultra Low Leakage Current C

• RBSOA and SCSOA Rated
G

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT100GT60JR UNIT

VCES Collector-Emitter Voltage 600

Volts
VGE Gate-Emitter Voltage ±30
I C1 Continuous Collector Current @ TC = 25°C 148
I C2 Continuous Collector Current @ TC = 100°C 80 Amps
1
I CM Pulsed Collector Current 300
SSOA Switching Safe Operating Area @ TJ = 150°C 300A @ 600V
PD Total Power Dissipation 500 Watts
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX Units

V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600

VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 1.5mA, Tj = 25°C) 3 4 5
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) 1.7 2.1 2.5
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) 2.5
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 25
I CES µA
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) TBD
4-2006

I GES Gate-Emitter Leakage Current (VGE = ±30V) 300 nA

Rev A

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
052-6274

APT Website - http://www.advancedpower.com

 DYNAMIC CHARACTERISTICS APT100GT60JR

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Cies Input Capacitance Capacitance 5150
Coes Output Capacitance VGE = 0V, VCE = 25V 475 pF
Cres Reverse Transfer Capacitance f = 1 MHz 295
VGEP Gate-to-Emitter Plateau Voltage Gate Charge 8.0 V
3 VGE = 15V
Qg Total Gate Charge 460
Qge Gate-Emitter Charge VCE = 300V 40 nC
Qgc Gate-Collector ("Miller ") Charge I C = 100A 210
TJ = 150°C, R G = 4.3Ω, VGE =
SSOA Switching Safe Operating Area 15V, L = 100µH,VCE = 600V 300 A

td(on) Turn-on Delay Time Inductive Switching (25°C) 40

tr Current Rise Time VCC = 400V 75
td(off) VGE = 15V
ns
Turn-off Delay Time 320
tf I C = 100A
Current Fall Time 100
Eon1 4 RG = 4.3Ω
Turn-on Switching Energy 3250
TJ = +25°C
Eon2 Turn-on Switching Energy (Diode) 5
3525 µJ
Eoff Turn-off Switching Energy 6
3125
td(on) Turn-on Delay Time Inductive Switching (125°C) 40
tr Current Rise Time VCC = 400V 75
ns
td(off) Turn-off Delay Time VGE = 15V 350
tf I C = 100A
Current Fall Time 100
Eon1 44 RG = 4.3Ω
Turn-on Switching Energy 3275
55
TJ = +125°C
Eon2 Turn-on Switching Energy (Diode) 4650 µJ
Eoff Turn-off Switching Energy 66
3750

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case (IGBT) .25
°C/W
RθJC Junction to Case (DIODE) N/A
WT Package Weight 29.2 gm

VIsolation RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 Volts

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
4-2006

APT Reserves the right to change, without notice, the specifications and information contained herein.
Rev A
052-6274
TYPICAL PERFORMANCE CURVES APT100GT60JR
200 300
V
GE
= 15V 12, 13, &15V
180 10V
250
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

160
9V
140
TC = 25°C 200
120
TC = 125°C
100 150 8V
80
TC = -55°C 100
60 7V
40
50
6V
20

0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25 30
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) FIGURE 2, Output Characteristics (TJ = 125°C)
200 250µs PULSE
16
I = 100A
TEST<0.5 % DUTY C
T = 25°C

VGE, GATE-TO-EMITTER VOLTAGE (V)

180 CYCLE
14
J
TJ = -55°C
IC, COLLECTOR CURRENT (A)

160 VCE = 120V

12
140 VCE = 300V
120 10

100 8 VCE = 480V

80 6
TJ = 25°C
60
TJ = 125°C 4
40
2
20
0 0
0 2 4 6 8 10 0 100 200 300 400 500
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
4.5 4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

TJ = 25°C.
IC = 200A 250µs PULSE TEST IC = 200A
4.0 <0.5 % DUTY CYCLE 3.5

3.5
3
3.0
2.5 IC = 100A
2.5 IC = 100A
2
2.0
1.5 IC = 50A
1.5 IC = 50A
1
1.0
VGE = 15V.
0.5 0.5 250µs PULSE TEST
<0.5 % DUTY CYCLE
0 0
8 6 10 12 14 16 0 25 50 75 100 125 150
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
1.15 200

1.10 180
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE

1.05 160

140
1.00
(NORMALIZED)

120
0.95
100
0.90
80
0.85
4-2006

60
0.80 40
0.75 20
Rev A

0.70 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
052-6274

FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
 APT100GT60JR
35 450

400

td (OFF), TURN-OFF DELAY TIME (ns)

VGE = 15V
td(ON), TURN-ON DELAY TIME (ns)
30
350
25
300
VGE =15V,TJ=25°C
VGE =15V,TJ=125°C
20 250

15 200

150
10
VCE = 400V 100
5 TJ = 25°C, or 125°C VCE = 400V
RG = 4.3Ω 50 RG = 4.3Ω
L = 100µH L = 100µH
0 0
0 25 50 75 100 125 150 175 200 225 0 25 50 75 100 125 150 175 200 225
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
250 200
RG = 4.3Ω, L = 100µH, VCE = 400V RG = 4.3Ω, L = 100µH, VCE = 400V
180

200 160
TJ = 125°C, VGE = 15V
140

tf, FALL TIME (ns)

tr, RISE TIME (ns)

150 120

100

100 80

60
TJ = 25°C, VGE = 15V
50 40
TJ = 25 or 125°C,VGE = 15V
20
0 0
0 25 50 75 100 125 150 175 200 225 0 25 50 75 100 125 150 175 200 225
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
16000 12000
V = 400V V = 400V
CE CE
V = +15V
EOFF, TURN OFF ENERGY LOSS (µJ)

V = +15V GE
GE
EON2, TURN ON ENERGY LOSS (µJ)

14000 R = 4.3Ω
G
R = 4.3Ω
G
10000
12000 TJ = 125°C
TJ = 125°C
8000
10000

8000 6000

6000
4000
4000
2000
2000 TJ = 25°C
TJ = 25°C
0 0
0 25 50 75 100 125 150 175 200 225 0 25 50 70 100 125 150 175 200 225
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
35000 16000
V
CE
= 400V V = 400V Eon2,200A
SWITCHING ENERGY LOSSES (µJ)

CE
V = +15V V = +15V
GE Eon2,200A GE
SWITCHING ENERGY LOSSES (µJ)

30000 T = 125°C
J
14000 R = 4.3Ω
G

12000
25000
Eoff,200A
10000
20000
8000
15000
6000
4-2006

Eoff,200A Eon2,100A
10000
Eoff,100A 4000 Eon2,100A
Eoff,100A
5000 Eoff,50A 2000 Eoff,50A
Rev A

Eon2,50A Eon2,50A
0 0
0 10 20 30 40 50 25 50 75
0 100 125
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
052-6274

FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES APT100GT60JR
10,000 350

IC, COLLECTOR CURRENT (A)

Cies
5,000 300
C, CAPACITANCE ( F)
250
P

200
1,000
150
500 C0es
100

Cres 50

100 0
0 10 20 30 40 50 0 100 200 300 400 500 600 700
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area

0.30

0.25
ZθJC, THERMAL IMPEDANCE (°C/W)

0.9

0.20
0.7

0.15
0.5
Note:

0.10

PDM
t1
0.3
t2

0.05 t
0.1 SINGLE PULSE Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

100
FMAX, OPERATING FREQUENCY (kHz)

50
T = 75°C
C

TJ (°C) TC (°C) F = min (fmax, fmax2)

max
10 0.05
fmax1 =
0.0587 0.132 0.0587 td(on) + tr + td(off) + tf
ZEXT

T = 100°C
Dissipated Power C
(Watts)
5
0.0120 0.420 4.48
Pdiss - Pcond
fmax2 =
T = 125°C
Eon2 + Eoff
ZEXT are the external thermal J
D = 50 %
impedances: Case to sink, TJ - TC
sink to ambient, etc. Set to V
CE
= 400V Pdiss =
zero when modeling only R = 4.3Ω
G
RθJC
the case to junction. 1
10 20
30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL Figure 20, Operating Frequency vs Collector Current
4-2006
Rev A
052-6274
 APT100GT60JR

Gate Voltage
APT100DQ60 10%
TJ = 125°C

td(on)
tr
V CC IC V CE

90% Collector Current

5%
5% 10%

A CollectorVoltage

D.U.T.
Switching Energy

Figure 21, Inductive Switching Test Circuit

Figure 22, Turn-on Switching Waveforms and Definitions

90%

Gate Voltage TJ = 125°C

td(off)
CollectorVoltage
90%

tf
10%
0
Collector Current

Switching Energy

Figure 23, Turn-off Switching Waveforms and Definitions

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M4
H=4.8 (.187) (4 places)
H=4.9 (.193)
(4 places)

25.2 (0.992)
r = 4.0 (.157)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)

3.3 (.129) 1.95 (.077)

3.6 (.143) 2.14 (.084)
14.9 (.587) * Emitter Collector
15.1 (.594)
30.1 (1.185)
4-2006

* Emitter terminals are shorted

30.3 (1.193) internally. Current handling
38.0 (1.496) capability is equal for either
38.2 (1.504) Source terminal.
Rev A

* Emitter Gate
052-6274

Dimensions in Millimeters and (Inches)

ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.