3/30/25, 7:15 PM PN Junction Theory of Semiconductor Diode
PN Junction Theory of Semiconductor Diode
Electronics & Electrical Digital Electronics Miscellaneous
When a p–type semiconductor is suitably joined to n–type semiconductor, the contact
surface of the semiconductors is called as pn–junction.
Properties of pn – junction
The p–type semiconductor has holes and the n–type semiconductor has free electrons as
the majority charge carriers. When both p–type and n-type materials are suitably joined
together to form pn–junction. At the junction, the free electrons from the n–side diffuse
over to the p–side and the holes from the p–side to the n–side. Since both the materials
are electrically neutral, so a positive charge is build up on the n–side of the junction and
negative charge on the p–side of the junction. This created charge soon prevents further
diffusion. It is because the positive charge on n–side repels the holes crossing the
junction from p–side to n–side and negative charge on p–side repels the electrons
crossing the junction from n-side to p–side. Thus, a barrier is set up against the
movement of charge carriers across the junction. This is called Potential Barrier (VB).
The value of VB ranges from 0.1 to 0.7 V.
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3/30/25, 7:15 PM PN Junction Theory of Semiconductor Diode
From the potential distribution diagram, it is clear that a potential barrier sets up which
gives rise to electric field. This field prevents movement of the majority charge carriers
across the junction. The region in the vicinity of the junction is known as Depletion
Layer because the mobile charge carriers are depleted from this region.
Biasing of PN Junction
In electronics, Biasing mean the use of DC voltage to establish some operating
conditions for an electronic device.
The biasing conditions for a pn–junction are of two types −
Forward Biasing
Reverse Biasing
Forward Biasing
When the external DC voltage is applied to the pn–junction in such a way that it cancels
the potential barrier, thus permitting the current flow is called forward biasing.
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3/30/25, 7:15 PM PN Junction Theory of Semiconductor Diode
To make a pn–junction forward bias, the p–type material is connected to positive
terminal of the battery and the n–type material to the negative terminal. The applied
forward voltage establishes an electric field which acts in opposite direction the barrier
potential. Since the barrier potential is very small, therefore a small forward voltage can
eliminate the potential barrier. Once the potential barrier is eliminated, the junction
resistance becomes almost zero and a forward current starts flowing through the circuit.
From the forward I-V characteristics of pn–junction, it can be seen that at first the
forward current increases slowly and the resulting curve is non–linear. This is because
the applied voltage is used up in overcoming the potential barrier. Once the applied
voltage becomes greater than potential barrier, the pn–junction acts like an ordinary
conductor. Hence the forward current increases very sharply with the increase in applied
voltage. The curve is almost linear.
Reverse Biasing
When the external DC voltage applied across the pn–junction is in such direction that
potential barrier is increased. It is called Reverse Biasing.
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3/30/25, 7:15 PM PN Junction Theory of Semiconductor Diode
To make the pn–junction reverse biased, connect the negative terminal of battery to the
p–type material and positive terminal to the n–type material. The electric field due to
the applied reverse voltage acts in the same direction as the field due to potential
barrier. The increased potential barrier prevents the flow of charge carriers across the
junction. Hence, the junction offers very high resistance to the current flow.
From I–V characteristics of reverse biased junction, it can be seen that a small current of
the order of a few μA flows in the circuit under reverse bias. This is called reverse
leakage current and is due to minority charge carriers (electrons in the p–type and holes
in the n–type). As the applied voltage is increased in the reverse direction a point is
reached where breakdown of the pn–junction takes place and a high amount of current
starts flowing through the pn-junction and the voltage corresponding to this point is
called as breakdown voltage or Zener Voltage (VZ). The sudden rise of reverse
current may damage the junction permanently due to excessive heat.
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