1.) An NMOS amplifier is to be designed to provide 10-V peak output signal
across a 20-kΩ load that can be used as a drain resistor. If a gain of at least 10 V/V is needed, what gm is required ? Using a dc supply of 1.8 V. what values of ID and Vov would you choose? What W/L. ratio is required if μnCox= 200 μA/V2 ? If Vt = 0.4 V, find VGS . 2.) Calculate the overall voltage gain of a CS amplifier fed with a 1-MΩ source and connected to a 10-kΩ load. The MOSFET has gm mA/V, and a drain resistance RD = 10 kΩ is utilized. 3.) A CS amplifier utilizes a MOSFET with µnCox = 400 µA/V2 and W/L= 10. It is biased at ID = 320 µA and uses The RD = 10kΩ Find Rin , Av and Ro Also, if a load resistance of 10kΩ is connected to the output, what overall voltage gain Gv is realized ? Now, if a 0.2-V peak sine-wave signal is required at the output, what must the peak amplitude of vsig be ? 4.) A common-source amplifier utilizes a MOSFET operated at Vov = 0.25 V. The amplifier feeds a load resistance RL = 15 kΩ. The designer selects RD = 2RL. If it is required to realize an overall voltage gain GV of -10 V/V what gm is needed? Also specify the bias current ID. If, to increase the output signal swing, RD is reduced to RD = RL, what does GV become? 5.) Consider an NMOS transistor having kn=10mA/V2 .Let the transistor be biased at Vov=0.2V. For operation in saturation, what DC bias current ID results? If a 0.02-V signal is superimposed on VGS, find the corresponding increment in collector current by evaluating the total collector current iD and subtracting the DC bias current ID. Repeat for a -0.02 V signal. Use these results to estimate gm.