UMF28N

Transistors

Power management (dual transistors)

UMF28N

2SA1774 and DTC124XE are housed independently in a UMT package.

zApplication zExternal dimensions (Unit : mm)

Power management circuit
UMF28N

0.65
(3)
(4)
zFeatures

1.3
2.0
0.2

(2)
(5)
(6)
1) Power switching circuit in a single package.

0.65
(1)
1.25
2) Mounting cost and area can be cut in half.
2.1

0.15

0.9
0.7
zStructure

0to0.1
0.1Min.

Silicon epitaxial planar transistor Each lead has same dimensions

ROHM : UMT6
EIAJ : SC-88 Abbreviated symbol : F28

zEquivalent circuit

(3) (2) (1)

DTr2 Tr1
R1

R2

(4) (5) (6)

R1=22kΩ
R2=47kΩ

zPackaging specifications
Type UMF28N
Package UMT6
Marking F28
Code TR
Basic ordering unit (pieces) 3000

1/4
 UMF28N
Transistors

zAbsolute maximum ratings (Ta=25°C)

Tr1
Parameter Symbol Limits Unit
Collector-base voltage VCBO −60 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −6 V
Collector current IC −150 mA
Collector power dissipation PC 150 (TOTAL) mW ∗
Junction temperature Tj 150 °C

Storage temperature Tstg −55 to +150 °C

∗ 120mW per element must not be exceeded.

DTr2
Parameter Symbol Limits Unit
Supply voltage VCC 50 V
Input voltage VIN −10 to +40 V
IO 100
Output current mA
IC(Max.) 100
Power dissipation PC 150(TOTAL) mW ∗

Junction temperature Tj 150 °C

Range of storage temperature Tstg −55 to +150 °C
∗ 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.

zElectrical characteristics (Ta=25°C)

Tr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −60 − − V IC = −50µA
Collector-emitter breakdown voltage BVCEO −50 − − V IC = −1mA
Emitter-base breakdown voltage BVEBO −6 − − V IE = −50µA
Collector cutoff current ICBO − − −0.1 µA VCB = −60V
Emitter cutoff current IEBO − − −0.1 µA VEB = −6V
Collector-emitter saturation voltage VCE(sat) − − −0.5 V IC/IB = −50mA/−5mA
DC current transfer ratio hFE 180 − 390 − VCE = −6V, IC = −1mA
Transition frequency fT − 140 − MHz VCE = −12V, IE = 2mA, f = 100MHz
Output capacitance Cob − 4 5 pF VCB = −12V, IE = 0A, f = 1MHz

DTr2
Parameter Symbol Min. Typ. Max. Unit Conditions
VI(off) − − 0.4 VCC=5V, IO=100µA
Input voltage V
VI(on) 2.5 − − VO=0.3V, IO=2mA
Output voltage VO(on) − 0.1 0.3 V IO=10mA, II=0.5mA
Input current II − − 0.36 mA VI=5V
Output current IO(off) − − 0.5 µA VCC=50V, VI=0V
DC current gain GI 68 − − − VO=5V, IO=5mA
Input resistance R1 15.4 22 28.6 kΩ −
Resistance ratio R2/R1 1.7 2.1 2.6 − −
Transition frequency fT − 250 − MHz VCE=10V, IE= −5mA, f=100MHz ∗
∗ Transition frequency of the device.

2/4
 UMF28N
Transistors

zElectrical characteristics curves

Tr1
-35.0
-50 -10 -100
VCE = −6V Ta = 25°C Ta = 25°C
Ta = 100°C -31.5

COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : Ic (mA)

COLLECTOR CURRENT : IC (mA)

-20 25°C -500
−40°C -8 -28.0 -80 -450
-10 -400
-24.5 -350
-300
-5 -6 -21.0 -60 -250
-17.5 -200
-2
-14.0
-4 -40 -150
-1
-10.5
-100
-0.5 -7.0
-2 -20
-50µA
-3.5µA
-0.2
IB = 0 IB = 0
-0.1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 -1 -2 -3 -4 -5

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output
characteristics characteristics ( Ι ) characteristics ( ΙΙ )

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

500 500 -1
Ta = 25°C VCE = -5V Ta = 100°C Ta = 25°C
-3V
-1V 25°C
-0.5
DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

200 -40°C
200

-0.2
100
IC/IB = 50
100
-0.1 20
50 10
50
-0.05

VCE = -6V
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector Fig.5 DC current gain vs. collector Fig.6 Collector-emitter saturation
current ( Ι ) current ( ΙΙ ) voltage vs. collector current ( Ι )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

1000
: Cib (pF)

-1 20
lC/lB = 10 Ta = 25°C Ta = 25°C
TRANSITION FREQUENCY : fT (MHz)

VCE = -12V f = 1MHz

Cib
IE = 0A
-0.5 500
10 IC = 0A
EMITTER INPUT CAPACITANCE

Co
b
-0.2 200 5

Ta = 100°C
-0.1
25°C 100
-40°C
2
-0.05
50

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 0.5 1 2 5 10 20 50 100 -0.5 -1 -2 -5 -10 -20

COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)

Fig.7 Collector-emitter saturation Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance vs.
voltage vs. collector current ( ΙΙ ) emitter current collector-base voltage
Emitter input capacitance vs.
emitter-base voltage

3/4
 UMF28N
Transistors

DTr2
100 10m 1k
VO=0.3V VCC=5V VO=5V
5m
50 500 Ta=100°C
2m 25°C

OUTPUT CURRENT : Io (A)

INPUT VOLTAGE : VI(on) (V)

20 −40°C

DC CURRENT GAIN : GI
1m 200
10 500µ 100
Ta=−40°C Ta=100°C
5 25°C 200µ 25°C 50
100°C 100µ −40°C
2 50µ 20
1 20µ 10
500m 10µ 5
5µ
200m 2
2µ
100m 1µ 1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 0 0.5 1.0 1.5 2.0 2.5 3.0 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage Fig.3 DC current gain vs. output
(ON characteristics) (OFF characteristics) current

1
lO/lI=20
500m
OUTPUT VOLTAGE : VO(on) (V)

200m Ta=100°C
25°C
100m −40°C

50m

20m
10m

5m

2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

OUTPUT CURRENT : IO (A)

Fig.4 Output voltage vs. output
current

4/4
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1
www.s-manuals.com