Rev. Roum. Sci. Techn.– Électrotechn. et Énerg.

Vol. 69, 2, pp. 183–188, Bucarest, 2024

PERFORMANCE OF ZINC OXIDE-VANADIUM PENTOXIDE

VARISTORS IN MEDIUM VOLTAGE SURGE ARRESTERS
MAGDALENA-VALENTINA LUNGU1,*, ALINA CARAMITU1, MIHAI MARIN1, DELIA PĂTROI1,
VIRGIL MARINESCU1, CIPRIAN MANEA1, PETRIŞOR GODEANU2, ALEXANDRA BARBU2

Keywords: Advanced functional materials; Metal oxides; ZnO-V2O5 varistors; Medium voltage surge arresters.
Metal oxide varistor (MOV) discs (Ø28 mm × 12 mm) made of 97.5 mol.% zinc oxide (ZnO), and 0.5 mol.% each of vanadium
pentoxide (V2O5), tin (IV) oxide (SnO2), antimony(III) oxide (Sb2O3), cobalt(II, III) oxide (Co3O4), and chromium(III) oxide (Cr2O3)
additives were produced using powder metallurgy. The obtained MOVs were polycrystalline with high density. This study focused on
analyzing the microstructure and mechanical and electrical properties of the MOVs. The developed MOVs had a fine-grained
microstructure with an average ZnO grain size of about 10 μm. The Ag-coated MOV discs tested in a range of 100 – 1300 V ac
exhibited a leakage current of 0.033 – 1.420 mA and a minimum varistor voltage of 2.37 ± 0.15 kV. After conducting functional tests
on Ag-coated MOVs installed in polymer-housed surge arresters, it was found that they are suitable for use in medium voltage
arresters with a nominal voltage (Un) of 25 kV, a continuous operating voltage (Uc) of 12 kV and a leakage current (IL) of 1 mA.

REOs, and other MOs, are chosen to enhance nonlinearity,

1. INTRODUCTION conductivity, and stability, as well as to retard or enhance grain
Metal oxide varistors (MOVs) are key components in growth, among other factors. The type, content, and size of
surge arresters, which limit transient overvoltages or surges VFO and VEDs, along with GB interface states, greatly
across power circuits. Metal oxide surge arresters protect influence the electrical properties of MOVs [2,12–14].
electrical equipment and installations in high-, medium-, and Numerous state-of-the-art publications extensively
low-voltage systems against potentially damaging power document the fundamental characteristics of ZnO-based
surges resulting from faults and lightning strikes [1,2]. varistors, including their electrical properties, physics,
MOVs are multicomponent ceramic materials composed chemistry, and microstructure [1,7,8,14].
of a semiconducting metal oxide (SMO) such as ZnO, SnO2, Disc-shaped ZnO-based varistors, known as ZnO blocks,
or TiO2, along with MO additives [1–5]. These additives are among the most widely commercialized MOVs used in
commonly include transition element oxides (TEOs), rare surge arrester applications [2,8]. Datasheets detailing ZnO
earth oxides (REOs), and other SMOs distinct from the major blocks for surge arresters may include characteristics such as
components utilized in the MOV formulation [2]. dimensions, nominal voltage (Un), varistor voltage or V1mA,
MOVs are produced in different formulations, shapes, and maximum continuous operating voltage (Uc) or rated voltage
sizes using powder metallurgy (PM). MOVs are nonohmic (Ur), maximum surge current capability (Imax), leakage
devices with a complex polycrystalline structure and variable current (IL), energy absorption capability, response time to a
electrical resistance (R) to applied voltages [3,6]. MOVs surge event, operating temperature range, etc. However, they
exhibit nonlinear current-voltage (I-V) characteristics, which usually lack information on the chemical composition of
occur at the grain boundaries (GBs), and display distinct MOVs, which are generically named ZnO blocks. On the
behavior across main regions of the I-V curves [2,6–8]. In the contrary, most publications provide details on MOV
leakage current region, ZnO-based varistors maintain a highly formulations and some data on processing techniques and
resistive state (R ≤ 10 GΩ) at low currents (I < 10 μA). In specific parameters. However, most investigations mainly
contrast, in the upturn region, they exhibit low resistance in the focus on the microstructure and electrical properties of
range of 1 – 10 Ω at high currents (I > 1 kA). The nonlinear MOVs under laboratory conditions.
region comprises currents between 10 μA and 1 kA. Above Commercial ZnO-based varistors primarily contain Bi2O3
the threshold voltage, also known as the breakdown voltage at as a VFO. They exhibit ZnO grain sizes of 10 – 100 μm, a
1 mA dc test current (V1mA), the varistor starts to conduct, doped GB depletion length ranging from 50 nm to 100 nm, a
achieving a high nonlinear coefficient (α) [2,9–11]. nonlinear coefficient (α) of 30 – 80, and energy absorption
The first discoveries on the varistor effect (α of 50) of ZnO- capabilities ≥ 200 J/m3, among other characteristics [15,16].
0.5 % Bi2O3-1 % Sb2O3-0.5 % CoO-0.5 % MnO-0.5 % Cr2O3 The literature provides insufficient data on the
(mol.%) ceramics sintered at 1350 °C for 1 hour, were development and scalability of MOVs for surge arresters.
conducted by Matsuoka over 53 years ago [3]. Since then, Moreover, electrical testing under real operating conditions
researchers worldwide have continuously developed of MOVs installed in surge arresters is generally conducted
innovative varistor formulations to enhance their performance using commercial ZnO blocks with undefined composition
in practical applications. and physical mechanical properties [17–19].
ZnO-based varistors contain a varistor-forming oxide This study presents findings on a novel ZnO-based
(VFO) such as Bi2O3, Pr2O3, Pr6O11, V2O5, etc. to induce varistor's microstructure and chemical, mechanical, and
nonlinearity, along with several varistor-enhancing dopants electrical properties. The varistor composition includes
(VEDs) [2,12–14]. These dopants, selected from TEOs, 97.5 mol.% ZnO as the primary component, 0.5 mol. %

1 National Institute for Research and Development in Electrical Engineering ICPE-CA (INCDIE ICPE-CA) Bucharest, 313 Splaiul Unirii
Street, 030138, Bucharest, Romania
2 MAIRA MONTAJ SRL, 38A Inovatorilor Street, 012417, Bucharest, Romania

Emails: [email protected], [email protected], [email protected], [email protected]

[email protected], [email protected], [email protected], [email protected]
DOI: 10.59277/RRST-EE.2024.69.2.11
184 Zinc Oxide-Vanadium pentoxide varistors in surge arresters 2

V2O5 as the varistor-forming oxide, and 0.5 mol. % each of

SnO2, Sb2O3, Co3O4, and Cr2O3 as the varistor-enhancing
dopants. The electrical tests of MOVs were conducted under
laboratory and real operating conditions to evaluate the
suitability of the newly developed ZnO-V2O5-based varistors
for use in medium voltage surge arresters.

2. MATERIALS AND METHODS

High-purity metal oxide powders were utilized as the raw
materials for producing MOVs. Table 1 outlines the primary
Fig. 2 – Diagram for measuring the leakage current across a MOV in AC.
physical properties of the starting powders.
Table 1
Starting metal oxide powders and their primary physical properties
Starting metal Purity Particle Molecular Melting Density
oxide powders (%) size weight point (g/cm3)
(producer) (µm) (g/mol) ( C)
ZnO (Sigma-Aldrich) 99.9 <5 81.39 1975 5.68
V2O5 (Sigma-Aldrich) ≥ 99.6 <5 181.88 690 3.35
SnO2 (Merck) ≥ 99 <5 150.69 1127 6.95
Sb2O3 (Carl Roth) ≥ 99 <5 291.52 656 5.20
Co3O4 (Merck) 99.9 < 10 240.80 895 6.11
Cr2O3 (Acros Organics) 99.0 < 10 151.99 2435 5.21

Fig. 3 – Electrical diagram for measuring the minimum varistor voltage of

The detailed technological process of preparing ZnO- a MOV in ac at the industrial frequency of 50 Hz.
V2O5-based composite powders and their consolidation into
disc-shaped MOVs with a diameter of 28 mm and a height The laboratory electrical testing involved measuring the
of 12 mm through powder metallurgy (PM) techniques has resistance of MOVs under dc at voltages of 500 V dc and
been described elsewhere [20]. It is important to mention that 1000 V dc (Fig. 1), measuring the leakage (conduction)
green compacts of MOVs were sintered in air at 1200 °C for current (IL) across a MOV in ac at applied voltages of 100 –
2 hours, followed by annealing at 900 °C for 4 hours. 1300 V ac (Fig. 2), and determining the minimum varistor
The microstructure and elemental content of MOVs were voltage (start-to-conduct voltage) in ac, at the industrial
analyzed with an Auriga Zeiss focused ion beam (FIB) – frequency of 50 Hz (Fig. 3).
field emission scanning electron microscope (FESEM) The testing under real operating conditions involved
equipped with an Energy Dispersive Spectroscopy (EDS) evaluating the performance of MOVs within three polymer-
X-MaxN Silicon Drift Detector at a 5 kV accelerating housed gapless surge arresters. The MOV discs were arranged
voltage. in stacks of 16 pieces per arrester. The electrical tests included
The indentation hardness (HIT), Vickers hardness HV, measuring the resistive current (IR) passing across an arrester
and elastic modulus (EIT) of the MOVs were determined (Fig. 4), and determining the nominal voltage (maximum
using a Micro-Combi Tester (MCT2, CSM Instruments) breakdown voltage) in dc (Fig. 5) and ac (Fig. 6). The
with a nanoindentation module (NHT2) and a diamond electrical components are symbolized as follows: AT –
Berkovich indenter. The tests were conducted following autotransformer, V – voltmeter, T (HVT) – high voltage
ISO 14577-1 standard [21] and the Oliver & Pharr method transformer, R – resistor, C – capacitor, I – interrupter, kV –
[22], with a maximum force (Fmax) of 300 ± 3 mN in kilovoltmeter, mA – miliammeter, MOV – ZnO-V2O5-based
nonlinear loading, an approach speed of the indenter to a varistor, FC – filter capacitor, MOSA – metal oxide surge
disc-shaped MOV of 4000 nm/min, a loading/unloading arrester containing MOVs, Rs – shunt resistance, VD – voltage
rate of 600 mN/min, and a holding time of the indenter divider, and DSO – digital storage oscilloscope. K is the
under Fmax of 10 seconds. Ten measurements were demultiplication factor (K = 1.5 kV/0.22 kV for the HVT
performed per MOV, and the mean and standard deviation shown in Fig. 1 and 2), and 1/K is the multiplication factor
values of HIT, HV, and EIT were reported. (1/K = 0.22 kV/60 kV for the HVT shown in Fig. 3).
MOVs coated with Ag paste on both circular surfaces
were tested in laboratory and real operating conditions. All
the electrical tests complied with the standard IEC 60099-4
[23] and the Romanian normative PE 116/94 [24]. A Fluke
435-II three-phase energy and power quality analyzer was
used during the measurements.

Fig. 4 – Electrical diagram for measuring the resistive current passing

Fig. 1 –Diagram for measuring the electrical resistance of a MOV in DC. across a gapless MO surge arrester (MOSA).
3 Magdalena-Valentina Lungu et al. 185

The microstructure of ZnO-V2O5-based varistors (Fig. 8 –

Fig. 10) consists of microcrystalline grains of ZnO, with an
average size of about 10 μm, along with small-sized grains
(< 2 μm) resulting from the sintering reactions at high
temperature (1200 °C) between ZnO and MO additives. The
ZnO grain size of the developed ZnO-V2O5-based varistors
is consistent with the size range (10 – 15 μm) reported for
most commercial ZnO-Bi2O3-based varistors [26].

Fig. 5 – Electrical diagram for measuring the breakdown voltage in dc.

Fig. 6 – Electrical diagram for measuring the breakdown voltage in AC.

3. RESULTS AND DISCUSSION

Figure 7 illustrates the macrograph image of the disc- (a)
shaped ZnO-V2O5-based varistors prepared using PM
techniques. It confirms the production of solid blocks of ZnO-
V2O5-based varistors with a uniform green color, indicating
homogeneity in the ceramic materials. Moreover, surface
defects like cracks and pits are invisible to the naked eye.

(b)
Fig. 9 – a) SEM secondary electron (SE) image (5000 ×) of an unfractured
surface of MOVs; b) corresponding EDS spectrum.

Fig. 7 – Macrograph image of the developed ZnO-V2O5-based varistors.

The multicomponent MOVs were polycrystalline and

well-densified, with a bulk density of about 5.15 g/cm3 and
low apparent porosity. They also exhibited good dielectric
and optical properties, as detailed elsewhere [25].
3.1. MICROSTRUCTURE AND COMPOSITION
Figures 8–10 display the SEM images, EDS spectrum, and
EDS layered image of the developed MOVs.

Fig. 10 – EDS layered image (5000 ×) of MOVs.

The SEM micrographs shown in Fig. 8 – Fig. 10 align with

the X-ray diffraction results, revealing a predominant ZnO
phase with a hexagonal wurtzite structure, characterized by
a crystallite size of 138.5 nm, along with a secondary phase
containing Zn-Co-Sb-O [25]. Furthermore, in Fig. 8, the
Fig. 8 – SEM secondary electron secondary ion (SESI) image showing a intercrystalline fracture surface is observed to coincide with
fracture surface of MOVs (8000 ×). the ZnO grain boundaries (GBs) within the prepared MOVs.
186 Zinc Oxide-Vanadium pentoxide varistors in surge arresters 4

In Fig. 10, it is noticed that V, Sb, and Sn are mostly of pores in varistors. As expected, MOVs with higher density
located at the ZnO GBs, while Co and Cr are associated with and a more homogeneous microstructure exhibited better
both ZnO grains and GBs. The elemental content of the mechanical and electrical properties.
prepared MOVs determined from the EDS analysis (Fig. 9) Sedghi et al. [36] disclosed Vickers hardness values of 125
matched the designed content, although slightly reduced for and 251 respectively for ZnO-Bi2O3-Sb2O3-CoO-Cr2O3-
some metal elements. The decrease in V and Sb can be MnO-based varistors manufactured with powder metallurgy
attributed to the partial volatilization of V2O5 and Sb2O3 with and micron and nano-sized ZnO powders. However,
lower melting points than the sintering temperature of MOVs comparing their material properties is challenging due to
(1 200 °C) [2]. V2O5 is known to exhibit high vapor pressure numerous factors affecting the properties of ZnO-based
(≥ 290 Pa) at temperatures over 1 500 K (~1 227 °C), leading varistors [2] and limited data consistency across literature
to its evaporation during sintering at elevated temperatures studies.
[27]. Sb2O3 can also vaporize at high temperatures [28].
3.3. ELECTRICAL CHARACTERISTICS
Moreover, in ZnO-based varistors, it has been found that
ZnO, Bi2O3 and Sb2O3 are the key oxides controlling the The newly developed varistors demonstrated a significant
sintering reactions at high temperatures, leading to the varistor effect. When subjected to a low voltage of 500 V
formation of secondary phases [29,30]. The remaining MO DC, the varistors exhibited a high resistance of 230 MΩ,
additives used in MOVs can be solidly dissolved in ZnO and indicating a non-conductive state. Increasing the applied
incorporated into various secondary phases [30]. The voltage to 1000 V dc decreased the resistance to 110 MΩ,
vaporization resistance of ZnO-Bi2O3-based systems doped indicating a transition to a conductive state. This substantial
with 0.36 – 0.72 mol∙% Bi2O3 and 0.72 – 1.44 mol∙% Sb2O3 decrease in resistance suggests the ability of the prepared
increased at high sintering temperatures (1 000 – 1 250 °C) ZnO-V2O5-based varistors to protect against voltage surges.
[30]. A similar trend was observed for ZnO-V2O5-based Table 2 outlines the electrical characteristics of the ZnO-
systems doped with 0.25 – 0.5 mol∙% V2O5 and V2O5-based varistors measured under ac voltages.
2 mol∙% Sb2O3 and sintered at 1 200 °C. The resulting Table 2
varistors exhibited a main ZnO phase and a Zn7Sb2O12 spinel Electrical properties of the ZnO-V2O5-based varistors under ac voltages
secondary phase, which inhibited ZnO grain growth and MOV Voltage (UAC) Uc med
improved microstructure and electrical properties [12,32]. sample 100 V 200 V 250 V 500 V 1000 V 1300 V (kV)
The density and performance of the newly developed no. Leakage current IL (mA)
ZnO-V2O5-based varistors were enhanced mainly due to S1 0.037 0.072 0.088 0.157 0.537 1.200 2.40
S2 0.038 0.075 0.090 0.142 0.583 1.420 2.20
V2O5, which acted as a sintering aid. During sintering in air
S3 0.033 0.062 0.073 0.111 0.365 1.020 2.50
at 1 200 °C, forming a V-rich liquid phase facilitated the Mean ± 0.036 ± 0.070 ± 0.084 ± 0.137 ± 0.495 ± 1.213 ± 2.37 ±
dispersion of ZnO and other MO particles, promoting GB SD 0.003 0.007 0.009 0.023 0.115 0.200 0.15
migration, densification, and enhancing solid-state diffusion
processes. Literature studies on ZnO-based varistors doped At lower ac voltages of 100 V to 250 V, the ZnO-V2O5-
with 0.5 – 1 mol∙% Bi2O3 or V2O5 also confirmed that liquid- based varistors exhibited good electrical behavior with low
phase sintering induces a ZnO grain boundary structure, leakage current (IL) values of 0.033 – 0.090 mA (Table 2),
leading to nonlinear behavior in varistors [2,33]. indicating their ability to maintain a high resistance state.
In Fig. 10, both the V-rich and the Zn-Co-Sb-O secondary Upon increasing the ac voltage to 500 V, the varistors
phases are observed to segregate at the ZnO GBs. The exhibited neutral electrical behavior, with average IL values
segregation of insoluble Sb2O3 at the ZnO GB regions occurs of 0.137 ± 0.023 mA. However, at higher ac voltages of
due to the larger ionic radius of Sb3+ cations (0.076 nm) than 1 000 V and 1 300 V, the varistors displayed poor electrical
that of Zn2+ cations (0.074 nm) in the ZnO host lattice. Other behavior, suggested by significantly increased IL values
metal cations used as dopants in ZnO have ionic radii of (0.365 – 1.420 mA). Additionally, the average values of the
0.069 nm (Sn4+), 0.0615 nm (Cr3+), 0.0545 nm (Co3+), and minimum varistor voltage in ac (Uc med) of 2.37 ± 0.15 kV
0.054 nm (V5+), all smaller than Zn2+ cations (0.074 nm) with also confirm the good electrical performance of the newly
a coordination number of VI [34]. These metal cations developed varistors, indicating their ability to protect against
generate more donor states, which improves electron voltage surges at the industrial frequency of 50 Hz.
conduction, increases nonlinearity, and reduces the leakage
current of ZnO-based varistors [2].
3.2. MECHANICAL CHARACTERISTICS
The newly developed ZnO-V2O5-based varistors
exhibited an instrumented hardness (HIT) of 2.77 ± 0.20 GPa,
a Vickers hardness of 261 ± 16 HV, and an elastic modulus
(EIT) of 128 ± 7 GPa. The mechanical properties of these
varistors are comparable to those of several commercial
ZnO-Bi2O3-based varistor blocks (4 kV, class 1) with an
average ZnO grain size of 6 – 8 µm [35]. Yoshimura et al.
[35] reported hardness values ranging from 1.89 ± 0.09 GPa
to 2.26 ± 0.05 GPa, and elastic modulus values between
104.9 ± 1.0 GPa and 115.4 ± 1.8 GPa. The variation in these
properties mostly resulted from differences in the type and
content of secondary phases and the volume fraction and size Fig. 11 – Plots of ac voltage and current waveforms over time for a MOV.
5 Magdalena-Valentina Lungu et al. 187

Figure 11 presents plots of ac voltage and current surge [1]. The resistive current also increased around 3.1
waveforms over time, recorded using a Fluke 435-II analyzer times, up to 22 mA, with a temperature rise from 15 °C to
in single-phase (A) with neutral mode (AN) at nominal 77 °C. When subjected to voltages of 12 kV and 15 kV for
setting (voltage of 1 kV, current of 1 A, frequency of 50 Hz). 6 min., the MOVs attained maximum temperatures of 18 °C
It shows a voltage dip event, characterized by a rapid and 26 °C respectively. These MOVs exhibited temperature
deviation from the nominal voltage, captured 187 ms into ac increases of about 3 to 4. times lower than the maximum
testing of MOVs. However, no transient events were temperature of 77 °C observed at the higher applied voltage
observed during ac testing of MOVs for 1 minute. The (20 kV). This means lower applied voltages result in less
maximum root mean square (RMS) current (Arms) was 0.008 stress on the MOVs and, consequently, lower temperature
A, while the maximum RMS voltage (Vrms ph-n) was 1.31 kV rises. Additionally, the resistive current decreased
under AN mode, indicating overvoltage conditions considerably within 6 min. testing, with maximum IR values
compared to the nominal voltage. The absence of transient of 2.1 mA at 27 °C for 15 kV and 0.91 mA at 18 °C for
events despite overvoltage conditions suggests the efficiency 12 kV. Particularly, under a voltage of 12 kV, the resistive
of these MOVs in suppressing voltage spikes during testing. current exhibited minimal variation, ranging between
Figures 12 and 13 depict temperature-time and resistive 0.90 mA and 0.91 mA. This steady behavior indicates
current-temperature relationships during ac testing of MOVs superior electrical and thermal stability of the MOVs at
within gapless surge arresters, maintaining constant voltages 12 kV. Therefore, the MOVs are suitable for continuous
(Uc) of 12 kV, 15 kV, and 20 kV, respectively. operation at 12 kV due to their proven reliable performance
under this voltage level.
Table 3 presents electrical testing results conducted on
MOVs installed in three polymer-housed gapless surge
arresters. Un designates the nominal voltage, Uc represents
the continuous operating voltage, K denotes the leakage
current (IL) correction factor (K = 0.8 at 20 °C), and IR max
indicates the maximum resistive current at 20 °C (Fig. 14).
Table 3
Technical characteristics of the ZnO-V2O5-based varistors determined
under real operating conditions within gapless MO surge arresters
Sample Tests in DC Tests in AC T K Uc Tfinal
No. Un IL Uc IL IR max (°C) (kV) (°C)
(kV) (mA) (kV) (mA) (mA) in DC
S1 25.8 NA 20 2.5 20 20 0.8 40 42
S2 26.0 NA 20 2.4 20 20 0.8 41 40
S3 25.5 NA 20 2.5 20 20 0.8 40 41
Fig. 12 – Variation of the temperature versus time during ac testing of Mean ± 25.8 ± NA 20 2.5 ± 20 20 0.8 40.3 ± 41 ±
MOVs in gapless surge arresters at 12 kV, 15 kV, and 20 kV. SD 0.4 0.1 0.7 0.7

Fig. 13 – Variation of the resistive current versus temperature during ac

Fig. 14 – Recommended maximum resistive current at 20 °C.
testing of MOVs in gapless surge arresters at 12 kV, 15 kV, and 20 kV.

As the applied voltage increases from 12 kV to 20 kV, the After conducting functional tests on Ag-coated MOVs
temperature and resistive current (IR) of the MOVs exhibited installed in polymer-housed surge arresters, it was found that
a considerable rise over time. This rise suggests that higher they are suitable for use in medium voltage arresters with a
applied voltages increased stress on the MOVs, resulting in nominal voltage (Un) of 25 kV, a continuous operating
higher temperatures and greater resistive currents. The voltage (Uc) of 12 kV, and a leakage current (IL) of 1 mA.
temperature surge was very pronounced under a voltage of
20 kV, with the MOVs reaching a temperature of 77 °C 4. CONCLUSIONS
within 5 min. of ac testing, about 5.1 times higher than the Disc-shaped MOVs made of 97.5 mol∙% ZnO,
initial temperature (15 °C). This temperature rise was mainly 0.5 mol∙% V2O5 as the varistor-forming oxide, and
due to the increased energy dissipation within the MOVs as 0.5 mol∙% each of SnO2, Sb2O3, Co3O4, and Cr2O3 additives
they absorb and dissipate excess electrical energy during the were manufactured through powder metallurgy (PM). The
188 Zinc Oxide-Vanadium pentoxide varistors in surge arresters 6

PM route involved pressing ZnO-V2O5-based composite Varistors, in J.A. Pask, A.G. Evans (Edit.), Ceramic
Microstructures ’86, Materials Science Research, Springer, Boston,
powders into green compacts, sintering at 1200 °C for 2 hours,
MA, 21, pp. 665–678 (1987).
and annealing at 900 °C for 4 hours. The resulting MOV discs 15. O. Diwald, Zinc oxide nanoparticles for varistors, in O. Diwald, T.
had a final size of 28 mm in diameter and 12 mm in height. Berger (Edit.), Metal Oxide Nanoparticles, Wiley, Hoboken, NJ,
The developed ZnO-V2O5-based varistors exhibited a USA, pp. 783–807 (2021).
fine-grained microstructure with an average ZnO grain size 16. A.N.M. Karim, S. Begum, M.S.J. Hashmi, Role of surface to volume
ratio of zinc oxide arrester blocks on the energy absorption
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properties. The Ag-coated ZnO-V2O5-based varistors 17. C. Rojo Ceballos, F. Chejne, E. Pérez, A. Osorio, A. Correa, Study of the
demonstrated the varistor effect under various dc and ac behavior of low voltage ZnO varistors against very fast transient
voltages. Testing across a 100 − 1300 V ac voltage range overvoltages (VFTO), Electric Power Syst. Res., 214, 108937 (2023).
18. F. Munteanu, F.-M. Frigura-Iliasa, E. Cazacu, About establishing the
revealed leakage currents between 0.033 mA and 1.420 mA,
functional limits of a ZnO varistor based surge-arrester, Rev. Roum.
along with a minimum varistor voltage of 2.37 ± 0.15 kV. Sci. Techn.– Électrotechn. et Énerg., 52, 4, pp. 443–452 (2007).
These results indicate the ability of these MOVs to protect 19. B. Lončar, M. Vujisić, K. Stanković, P. Osmokrović, Stability of metal-
against voltage surges at the industrial frequency of 50 Hz. oxide varistor characteristics in exploitation conditions, Acta Phys.
Functional tests conducted on the Ag-coated MOVs Pol. A, 116, 6, pp. 1081–1084 (2009).
20. M.V. Lungu, C.D. Cîrstea, M. Marin, D. Tălpeanu, A. Caramitu, D.
installed in polymer-housed surge arresters revealed that the Pătroi, V. Marinescu, G.B. Sbarcea, C.A. Manea, P. Godeanu, A.
newly developed ZnO-V2O5-based varistors are suitable for Barbu, Process for obtaining some disc-shaped zinc oxide varistors,
use in medium voltage surge arresters with a nominal voltage RO Patent Application filed with the State Office for Inventions and
(Un) of 25 kV, a continuous operating voltage (Uc) of 12 kV, Trademarks (OSIM), No. A/00741 (2021).
and a leakage current (IL) of 1 mA. 21. ISO 14577-1, Metallic materials – Instrumented indentation test for
hardness and materials parameters – Part 1: Test method (2015).
22. W.C. Oliver, G.M. Pharr, An improved technique for determining hardness
ACKNOWLEDGMENTS and elastic modulus using load and displacement sensing indentation
experiments, J. Mater. Res., 7, 6, pp. 1564–1583 (1992).
This work was supported by 327 PED/2020 grant of the 23. IEC 60099-4, Surge arresters – Part 4: Metal-oxide surge arresters
Romanian Ministry of Research and Innovation and without gaps for a.c. systems, 2014.
Digitalization (MCID), CCCDI–UEFISCDI within PNCDI 24. PE 116/94, Normative for tests and measurements performed on
III, 25PFE/2021 grant of the MCID within PNCDI III, electrical installations and equipment, 1994.
Programme 1, and PN 42N/2023 grant of the MCID within 25. M.V. Lungu, A. Caramitu, D. Pătroi, V. Marinescu, G. Sbarcea, M.
Lucaci, M. Marin, D. Tălpeanu, P. Godeanu, Study of disc-shaped
NUCLEUS (CORE) Programme. ZnO based varistors doped with V2O5, Sb2O3, Co3O4, SnO2, and
Cr2O3, Book of Abstracts of the 10th International Conference of
Received on 20 May 2024 Applied Science (ICAS 2022), Banja Luka, Republic of Srpska,
Bosnia & Herzegovina, 25–28 May 2022, p. 65.
26. S. Anas, R.V. Mangalaraja, M. Poothayal, S.K. Shukla, S.
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