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2N3865

The 2N3865 is a silicon NPN power transistor designed for medium-speed switching and amplifier applications, featuring excellent safe operating area and low collector-emitter saturation voltage. It has maximum ratings including a collector-base voltage of 160V and a collector current of 7.5A, with robust performance ensured through 100% avalanche testing. Key electrical characteristics include a collector-emitter sustaining voltage of 150V and a DC current gain ranging from 30 to 90.

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5 views2 pages

2N3865

The 2N3865 is a silicon NPN power transistor designed for medium-speed switching and amplifier applications, featuring excellent safe operating area and low collector-emitter saturation voltage. It has maximum ratings including a collector-base voltage of 160V and a collector current of 7.5A, with robust performance ensured through 100% avalanche testing. Key electrical characteristics include a collector-emitter sustaining voltage of 150V and a DC current gain ranging from 30 to 90.

Uploaded by

basura.1000
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2N3865

DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.

APPLICATIONS
·Designed for medium-speed switching and
amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 160 V

VCEO Collector-Emitter Voltage 150 V

VEBO Emitter-Base Voltage 7 V

IC Collector Current-Continuous 7.5 A

PC Collector Power Dissipation@TC=25℃ 117 W

TJ Junction Temperature -65~200 ℃

Tstg Storage Temperature -65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.5 ℃/W

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2N3865

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0 150 V

IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5 mA

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.2A 1.0 V

VBE(sat) Base-Emitter Saturation Voltage IC=3A; IB= 0.2A 2.0 V

hFE DC Current Gain IC= 3A; VCE= 2V 30 90

*:Pulse test:Pulse width=300us,duty cycle≤2%

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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