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1N5711 THRU 1N6263: Small Signal Schottky Diodes

The document provides specifications for 1N5711 to 1N6263 small signal Schottky diodes, which have a reverse voltage range of 60 to 70 volts and a power dissipation of 400 mW. Key features include fast switching, low reverse leakage, and high surge current capability, with a maximum junction temperature of 125°C. The document also details mechanical data, absolute ratings, and electrical characteristics at 25°C ambient temperature.

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0% found this document useful (0 votes)
18 views2 pages

1N5711 THRU 1N6263: Small Signal Schottky Diodes

The document provides specifications for 1N5711 to 1N6263 small signal Schottky diodes, which have a reverse voltage range of 60 to 70 volts and a power dissipation of 400 mW. Key features include fast switching, low reverse leakage, and high surge current capability, with a maximum junction temperature of 125°C. The document also details mechanical data, absolute ratings, and electrical characteristics at 25°C ambient temperature.

Uploaded by

miaupisu73
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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1N5711 THRU 1N6263

SMALL SIGNAL SCHOTTKY DIODES


Reverse Voltage - 60 to 70 Volts Ptot- 400 mW

DO-35(GLASS) FEATURES
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
1.0 2(26.0) High temperature soldering guaranteed
MIN.
250 C/10 seconds,0.375”(9.5mm) lead length,
0.079(2.0)
MAX
5 lbs. (2.3kg) tension

0.165 (4.2)
MAX

MECHANICAL DATA
1.0 2(26.0)
Case: DO-35 glass case
MIN. Terminals: Plated axial leads, solderable per MIL-STD-750,
0.020(0.52)
Method 2026
TYP Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.005 ounce, 0.14 grams
Dimensions in inches and (millimeters)

ABSOLUTE RATINGS

SYMBOLS Value UNITS


1N5711 VRRM 70
Repetitive peak reverse voltage 1N6263 V
VRRM 60
Power dissipation (Infinite heat sink) Ptot 400* mW
Maximum single cycle surge 10ms square wave IFSM 2.0 A
Junction temperature TJ 125 C
Storage temperature range TSTG -55 to +150 C
*Valid provided that leads at a distance of 4mm from case are kept at ambient temperature

ELECTRICAL CHARACTERISTICS
Ratings at 25 C amblent temperature unless otherwise specified

SYMBOLS Min. Typ. Max. UNITS


Reverse breakover voltage 1N5711 VR 70
V
at IR=10mA 1N6263 VR 60
Leakage current at VR=50V IR 200 nA
Forward voltage drop at IF=1mA VF 0.41
1.0 V
IF=15mA VF
Junction capacitance at VR=0V, f=1MHz CJ 2.0 pF
Reverse recovery time at IF=IR=5mA, recover to 0.1 IR trr 1.0 ns
Thermal resistance, junction to ambient RqJA 0.3 K/mW

R STAR SEA
198 nvac LING JIE ELECTRONICS CO.,LTD.
RATINGS AND CHARACTERISTIC CURVES 1N5711 THRU 1N6263

FIG. 2-TYPICAL FORWARD CONDUCTION CURVE OF


FIG. 1-TYPICAL VARIATION OF FWD.CURRENT VS FWD. COMBINATION SCHOTTKY BARRIER AND
VOLTAGE FOR PRIMARY CONDUCTION PN JUNCTION GUARD RING
THROUGH THE SCHOTTY BARRIER

10
100

2 80
INSTANTANEOUS FORWARD

1
CURRENT,MILLiAMPERES

INSTANTANEOUS FORWARD
CURRENT,MILLAMPERES
5 60

0.1
40

20

0.01
0 0.5 1V 0
0 0.5 1V
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS INSTANTANEOUS FORWARD VOLEAGE,
VOLTS

FIG. 3-TYPICAL VARIATION OF REVERSE


CURRENT AT VARIATION TEMPERATURES
FIG. 4-TYPICAL CAPACITANCE CURVE AS A
FUNCTION OF REVERSE VOLTAGE
100 150 C
2
5 125 C

2
INSTANTANEOUS REVERSE CURRENT,

100 C
10
JUNCTION CAPACITANCE, pF

5
MILLIAMPERES

75 C
2

1
50 C 1
5

0.1 25 C

0.01
0 10 20 30 40 50V 0
0 10 20 30 40 50V
PERCENT OF PEAK REVERSE VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS

STAR SEA
nvac
R

199 LING JIE ELECTRONICS CO.,LTD.

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