AOD480

30V N-Channel MOSFET

General Description Features 1.4

The AOD480 uses advanced trench VGStechnology

=10V, ID=18A
and VDS (V) = 30V
design to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V)
charge. This device is suitable for use in PWM, load RDS(ON) <23 mΩ (VGS = 10V)
switching and general purpose applications. RDS(ON) <33 mΩ (VGS = 4.5V)

100% UIS Tested

100% Rg Tested

TO-252
Top View D-PAK Bottom View
D
D

G
S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 25
Current G TC=100°C ID 18 A
Pulsed Drain Current C IDM 64
Avalanche Current C IAR 12 A
Repetitive avalanche energy L=0.1mH C EAR 7 mJ
TC=25°C 21
B
PD W
Power Dissipation TC=100°C 11
TA=25°C 2.5
A
PDSM W
Power Dissipation TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16.7 25 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 40 50 °C/W
B
Maximum Junction-to-Case Steady-State RθJC 4.5 7 °C/W

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 AOD480

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 0.004 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 2.1 2.6 V
ID(ON) On state drain current VGS=10V, VDS=5V 64 A
VGS=10V, ID=20A 18.5 23
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 26 32
VGS=4.5V, ID=8A 25.4 33 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 20 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 3.2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 373 448 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 67 pF
Crss Reverse Transfer Capacitance 41 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2 2.8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 5.7 7.1 8.6 nC
Qg(4.5V) Total Gate Charge 2.7 3.5 4.2 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 1.2 nC
Qgd Gate Drain Charge 1.6 nC
tD(on) Turn-On DelayTime 4.3 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 2.8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 15.8 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 8.4 10.5 12.6 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 3.6 4.5 5.4 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current is limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev3: May. 2011

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOD480

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 16
10V
50
VDS=5V
6V
12
40
4.5V
ID (A)

ID(A)
30 8

20 VGS=3.5V 125°C
4
10 25°C

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

35 1.8
VGS=10V
VGS=4.5V
Normalized On-Resistance

ID=20A
1.6
30
Ω)
RDS(ON) (mΩ

1.4 VGS=4.5V
25 ID=8A
1.2

20
1
VGS=10V

15 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

60 1.0E+01
ID=20A
50 1.0E+00

1.0E-01
Ω)

40
RDS(ON) (mΩ

125°C
IS (A)

125°C
1.0E-02
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25°C
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04
10
1.0E-05
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

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 AOD480

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 600

VDS=15V 500
8 Ciss
ID=20A

Capacitance (pF)
400
VGS (Volts)

6
300
1.4
4
200
Coss
494 593
2
100 692 830

0 Crss
0
0 2 4 6 8 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
193
18
100 100

RDS(ON) 80
limited TJ(Max)=175°C
TC=25°C
10 10µs
Power (W)

60
ID (Amps)

DC 100µs 40
1 1ms
TJ(Max)=175°C
20
TC=25°C

0
0.1
0.0001 0.001 0.01 59 0.1 1 10
0.1 1 10 100
VDS (Volts)
142Width (s)
Pulse
30 Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Case (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=7°C/W
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOD480

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 30
ID(A), Peak Avalanche Current

Power Dissipation (W)

20

10

10

1
0
1 10 100 1000
0 25 50 75 100 125 150 175
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability °C)
TCASE (°
Figure 13: Power De-rating (Note B)

30 50

TA=25°C
40
Current rating ID(A)

20
Power (W)

30

20
10

10

0 0
0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000
°C)
TCASE (° Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=50°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse Ton
T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AOD480

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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