HCMC UNIVERSITY OF FINAL EXAMINATION

TECHNOLOGY AND EDUCATION

SEMESTER 1 – ACADEMIC YEAR 2023-2024
Faculty of International Education
Course name: Basic Electronics
Program name: EEET & ACE
Course ID: BAEL340662
Signature of Proctor 1 Signature of Proctor 2
Exam code: 01 Number of pages: 8
Duration: 90 minutes.
Two handwritten A4 papers
Marks / Signature Student writes answers directly in space
reserved in exam paper and submit back all
exam papers.
Signature of Marker 1 Signature of Marker 2
Student name:.............................................................

Student ID:..................................................................

Position ID:.................... Exam room:.........................

ANSWER SHEET
Guidelines
Select: X De-select: X Re-select:

No. A B C D No. A B C D
1 11
2 12
3 13
4 14
5 15
6 16
7 17
8 18
9 19
10 20

SECTION 1. MULTICHOICES (3 Marks)

Directions: Choose the one word or phrase marked (A), (B), (C) or (D) that best completes the
sentence and fill in the “Answer Sheet”.
Question 1: The movement of free electrons in a conductor is called
A. voltage B. current
C. recombination D. equilibrium
Question 2: An n-type semiconductor material
A. is intrinsic B. has trivalent impurity atoms added
C. has pentavalent impurity atoms added D. requires no doping

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Question 3: What factor(s) do(es) the barrier potential of a pn junction depend on?
A. type of semiconductive material B. the amount of doping
C. the temperature D. all of the above
Question 4: Reverse breakdown is a condition in which a diode
A. is subjected to a large reverse voltage. B. has no current flowing at all.
C. is reverse-biased and there is a small D. is heated up by large amounts of
leakage current. current in the forward direction.
Question 5: Determine the total discharge time for the capacitor in a clamper having C = 0.01F
and R = 500 k-ohms.
A. 5 ms B. 25 ms
C. 2.5 ms D. 50 ms
Question 6: Determine the peak value of the current through the load resistor.
A. 2.325 mA
Si Si
B. 5 mA
C. 4.65 mA
D. 2.5 mA

Question 7: What is the logic function of this circuit?

A. positive logic AND gate
B. positive logic OR gate
C. negative logic AND gate
D. negative logic OR gate

Question 8: Determine ID2.

A. 29.4 mA
B. 14.7 mA
C. 30.3 mA
D. 0 mA

Question 9: When a transistor is used as a switch, it is stable in which two distinct regions?
A. saturation and active B. active and cutoff
C. saturation and cutoff D. None of the above
Question 10: In this circuit  = 100 and VIN = 8V. The value of RB that will produce saturation is:
A. 150 k-ohms
B. 9.1 M-ohms
C. 100 k-ohms
D. 91 k-ohms

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Question 11: What is the order of doping, from heavily to lightly doped, for each region of BJT?
A. base, collector, emitter B. emitter, collector, base
C. emitter, base, collector D. collector, emitter, base
Question 12: For a JFET, the value of VDS at which ID becomes essentially constant is the
A. pinch-off voltage B. cutoff voltage
C. breakdown voltage D. ohmic voltage
Question 13: Which of the following devices has the highest input resistance?
A. diode B. JFET
C. MOSFET D. BJT
Question 14: Identify the p-channel D-MOSFET.
A. a
B. b
C. c
D. d
Question 15: High input resistance for a JFET is due to
A. a metal oxide layer. B. a large input resistor to the device.
C. an intrinsic layer. D. the gate-source junction being reverse-biased.
Question 16: An amplifier has Rin = 1.2 k-ohms. The coupling capacitor is 1F. Determine the
approximate lower cutoff frequency.
A. 133 Hz B. 13.3 kHz
C. 13.3 Hz D. 133 kHz
Question 17: What is the level of the voltage between the input terminals of an op-amp?
A. 12 V B. 5 V
C. 0.7 V D. Virtually zero
Question 18: What is the voltage gain of the unity follower?
A. 0 B. 1
C. -1 D. infinity
Question 19: The 7912 regulator IC provides ________.
A. +7 V B. +12V
C. -12 V D. -7V
Question 20: In this improved series regulator circuit, which of the following components is the
sampling circuit?
A. Zener diode
B. Load resistor
C. Resistors R1 and R2
D. Either of the two
transistors Q1 or Q2

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 SECTION 2. (7 Marks)
Question 21: (1 mark) Sketch vo for the network of Fig. 1.

Ge

7.7

Fig. 1

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Question 22: (5 marks) Given a cascaded amplifier as shown in Fig. 2:
a. Determine re of BJTs (0.5 marks)
b. Draw DCLL and ACLL of the BJT Q2, determine the corresponding MaxSwing (2 marks)
c. Sketch the small signal equivalent circuit, find Zi, Zo (1 mark)
d. Calculate the voltage gain (1 mark)
e. Find the cutoff low-frequency of the given circuit ignoring the influence of by-pass capacitors
(0.5 marks) +20 V

15 k 2.2 k 15 k 2.2 k
10 F 10 F
Vo
1.2 k
 = 200  = 200
4.7 k
10 F Q1 Q2

VS
4.7 k 1 k 4.7 k 1 k
20 F 20 F

Fig. 2

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Question 23: (1 mark) Given two inputs: V1 = 50 mV sin(1000t) and V2 = 10 mV sin(3000t).
Design an op-amp circuit (using one op-amp) to produce an output of: - 0.5 sin (1000t) - 0.33 sin
(3000t) (V).

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Note: Proctors are not allowed to give any unauthorized explanation.
Learning outcome mapping Assessed in
[LO 1.1]: Represent about structure and characteristics of Section 1
semiconductor material and P-N junction.
[LO 1.2]: Represent about structure and characteristics of Section 1
diode, transistor, thyristor.
[LO 1.3]: Apply the applications of diode circuit. Question 21
[LO 1.4]: Apply the small signal and power amplifier. Question 22
[LO 1.5]: Apply the feedback form in the amplifiers. Question 23
[LO 1.6]: Apply the oscillator circuits, active filter circuits Section 1
and source circuits (having voltage regulator).
[LO 2.1]: Analyze and design the application circuits of Question 21
diode.
[LO 2.2]: Analyze and design the amplifier circuits Question 22, 23
[LO 2.3]: Analyze and design the oscillator circuits, active Section 1
filters, AC to DC power conversion in source circuits.

05/12/2023
Approved by program chair
(signed and named)

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