V23990-P640-G09-PM

V23990-P640-H09-PM
datasheet

flow CON 0 1200 V / 75 A

Features flow 0 housing

● Input rectifier
● Optionally with brake chopper
● Vincotech clip-in housing

Target Applications Schematic

● Motor drives
● UPS

Types

● V23990-P640-G09-PM with brake

● V23990-P640-H09-PM without brake

Maximum Ratings

Parameter Symbol Condition Value Unit

Rectifier Diode

Repetitive peak reverse voltage VRRM Tj=Tjmax 1600 V

Forward current per diode IFAV DC current Tj=Tjmax Th=80°C 63 A

Surge forward current IFSM 850 A

tp=10ms half sine wave Tj=45°C
I2t-value I2 t 3610 A 2s

Power dissipation Ptot Tj=Tjmax Th=80°C 67 W

Maximum junction temperature Tjmax 150 °C

Brake Switch

Collector-emitter break down voltage VCE 1200 V

DC collector current IC Tj=Tjmax Th=80°C 34 A

Repetitive peak collector current Icpuls tp limited by Tjmax 105 A

Power dissipation Ptot Tj=Tjmax Th=80°C 65 W

Gate-emitter peak voltage VGE ±20 V

tSC Tj≤150°C 10 ms
Short circuit ratings*
VCC VGE=15V 900 V

Maximum junction temperature Tjmax 150 °C

* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits

copyright Vincotech 1 24 Mar. 2015 / Revision 1

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datasheet

Maximum Ratings

Parameter Symbol Condition Value Unit

Brake Prot. Diode

Peak Repetitive Reverse Voltage VRRM 1200 V

DC forward current IF Tj=Tjmax Th=80°C 6 A

Repetitive peak forward current IFRM tp limited by Tjmax 6 A

Power dissipation Ptot Tj=Tjmax Th=80°C 19 W

Maximum junction temperature Tjmax 150 °C

Brake Diode

Peak Repetitive Reverse Voltage VRRM 1200 V

DC forward current IF Tj=Tjmax Th=80°C 23 A

Repetitive peak forward current IFRM tp limited by Tjmax 50 A

Power dissipation Ptot Tj=Tjmax Th=80°C 38 W

Maximum junction temperature Tjmax 150 °C

Thermal properties

Storage temperature Tstg -40...+125 °C

Operation temperature Top -40...+110 °C

Insulation properties

Insulation voltage Vis t=2 s DC voltage 4000 V

Creepage distance min 12.7 mm

Clearance min 12.7 mm

copyright Vincotech 2 24 Mar. 2015 / Revision 1

 V23990-P640-G09-PM
V23990-P640-H09-PM
datasheet

Characteristic Values

Parameter Symbol Conditions Value Unit

Vr(V) or IC(A) or
VGE(V) or
VCE(V) or IF(A) or T(°C) Min Typ Max
VGS(V)
VDS(V) ID(A)

Rectifier Diode
Tj=25°C 1 1,17 1,5
Forward voltage VF 75 V
Tj=125°C 1,13
Tj=25°C 0,91
Threshold voltage (for power loss calc. only) Vto V
Tj=125°C 0,78
Tj=25°C 3
Slope resistance (for power loss calc. only) rt mΩ
Tj=125°C 5
Tj=25°C 0,5
Reverse leakage current Ir 1500 mA
Tj=150°C 1,5
Thermal grease
Thermal resistance chip to heatsink RthJH thickness ≤50um 1,04 K/W
λ= 1W/mK

Brake Switch
Tj=25°C 5 5,8 6,5
Gate emitter threshold voltage VGE(th) VCE=VGE 0,0015 V
Tj=125°C
Tj=25°C 1,3 1,69 2,2
Collector-emitter saturation voltage VCE(sat) 15 35 V
Tj=125°C 1,88
Tj=25°C 0,25
Collector-emitter cut-off ICES 0 1200 mA
Tj=125°C
Tj=25°C 650
Gate-emitter leakage current IGES 20 0 nA
Tj=125°C
6
Integrated Gate resistor Rgint Ω
Tj=25°C
Turn-on delay time td(on) ns
Tj=125°C 65
Tj=25°C
Rise time tr ns
Tj=125°C 26
Tj=25°C
Turn-off delay time td(off) ns
Rgon=32Ohm Tj=125°C 673
15 600 35
Rgoff=16Ohm Tj=25°C
Fall time tf ns
Tj=125°C 171
Tj=25°C
Turn-on energy loss per pulse Eon mWs
Tj=125°C 3,34
Tj=25°C
Turn-off energy loss per pulse Eoff mWs
Tj=125°C 3,99
Input capacitance Cies 2,53 nF

Output capacitance Coss f=1MHz 0 25 Tj=25°C 0,132 nF

Reverse transfer capacitance Crss 0,115 nF

Gate charge QGate 15 960 35 Tj=25°C 203 nC

Thermal grease
Thermal resistance chip to heatsink RthJH thickness ≤50um 1,08 K/W
λ= 1W/mK

Brake Prot. Diode

Tj=25°C 1 1,61 2,3
Diode forward voltage VF 3 V
Tj=125°C 1,56
Tj=25°C 250
Reverse leakage current Ir 1200 uA
Tj=125°C
Thermal grease
Thermal resistance chip to heatsink RthJH thickness ≤50um 3,62 K/W
λ= 1W/mK

Brake Diode
Tj=25°C 1 1,7 2,4
Diode forward voltage VF 35 V
Tj=125°C 1,68
Tj=25°C 250
Reverse leakage current Ir 1200 mA
Tj=125°C
Tj=25°C
Peak reverse recovery current IRRM A
Tj=125°C 56,4
Tj=25°C
Reverse recovery time trr ns
Rgon=32Ohm Tj=125°C 279
Rgoff=16Ohm Tj=25°C
Reverse recovered charge Qrr 15 600 35 mC
Tj=125°C 5,15
di(rec)max Tj=25°C
Peak rate of fall of reverse recovery current A/ms
/dt Tj=125°C 2460
Tj=25°C
Reverse recovery energy Erec mWs
Tj=125°C 1,94
Thermal grease
Thermal resistance chip to heatsink RthJH thickness ≤50um 1,86 K/W
λ= 1W/mK

copyright Vincotech 3 24 Mar. 2015 / Revision 1

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datasheet
Brake

Figure 1 Brake IGBT Figure 2 Brake IGBT

Typical output characteristics Typical output characteristics
IC = f(VCE) IC = f(VCE)
100 100
IC (A)

IC (A)
80 80

60 60

40 40

20 20

0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5

At At
tp = 250 µs tp = 250 µs
Tj = 25 °C Tj = 125 °C
VGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V

Figure 3 Brake IGBT Figure 4 Brake FWD

Typical transfer characteristics Typical diode forward current as
IC = f(VGE) a function of forward voltage
IF = f(VF)
40 40
IC (A)

IF (A)

32 32

24 24

125 o C
125 o C 25 o C
25 o C
16 16

8 8

0 0
0 2 4 6 8 10 V GE (V) 12 0 0,5 1 1,5 2 V F (V) 2,5

At At
tp = 250 µs tp = 250 µs
VCE = 10 V

copyright Vincotech 4 24 Mar. 2015 / Revision 1

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Brake

Figure 5 Brake IGBT Figure 6 Brake IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(I C) E = f(RG)
10 10

E (mWs)
E (mWs)

Eon

8 8

Eoff
6 6

Eon
Eoff
4 4

Erec

2 2

Erec

0 0
0 10 20 30 40 50 60 I C (A) 70 0 30 60 90 120 R G ( Ω ) 150

With an inductive load at With an inductive load at

Tj = 125 °C Tj = 125 °C
VCE = 600 V VCE = 600 V
VGE = 15 V VGE = 15 V
Rgon = 32 Ω IC = 35 A
Rgoff = 16 Ω

Figure 7 Brake IGBT Figure 8 Brake IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(I C) t = f(RG)
10 10
t ( µs)

t ( µs)

tdoff
1 tdoff 1

tf tdon
tf
0,1 tdon 0,1

tr tr

0,01 0,01

0,001 0,001
0 10 20 30 40 50 60 IC (A) 70 0 30 60 90 120 RG (Ω ) 150

With an inductive load at With an inductive load at

Tj = 125 °C Tj = 125 °C
VCE = 600 V VCE = 600 V
VGE = 15 V VGE = 15 V
Rgon = 32 Ω IC = 35 A
Rgoff = 16 Ω

copyright Vincotech 5 24 Mar. 2015 / Revision 1

 V23990-P640-G09-PM
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datasheet
Brake

Figure 9 Brake IGBT Figure 10 Brake FWD

IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
ZthJH = f(tp) ZthJH = f(tp)
1
10 101
ZthJH (K/W)

ZthJH (K/W)
100 100

D = 0,5
D = 0,5
0,2
0,2
0,1
0,1
10-1 0,05 10-1
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0.000
0.000

10-2
10-2
10-5 10-4 10-3 10-2 10-1 100 101 10
t p (s) 10-5 10-4 10-3 10-2 10-1 100 t p (s) 101 10

With With
D= tp / T D= tp / T
RthJH = 1,08 K/W RthJH = 1,86 K/W

copyright Vincotech 6 24 Mar. 2015 / Revision 1

 V23990-P640-G09-PM
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datasheet
Brake

Figure 11 Brake IGBT Figure 12 Brake IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IC = f(Th)
150 40

IC (A)
Ptot (W)

35
125

30

100
25

75 20

15
50

10

25
5

0 0
0 50 100 150 Th ( o C) 200 0 50 100 150 Th ( o C) 200

At At
Tj = 150 ºC Tj = 150 ºC
VGE = 15 V

Figure 13 Brake FWD Figure 14 Brake FWD

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IF = f(Th)
90 30
Ptot (W)

IF (A)

75 25

60 20

45 15

30 10

15 5

0 0
0 50 100 150 Th ( o C) 200 0 50 100 150 Th ( o C) 200

At At
Tj = 150 ºC Tj = 150 ºC

copyright Vincotech 7 24 Mar. 2015 / Revision 1

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Brake Prot. Diode

Figure 1 Brake Prot. Diode Figure 2 Brake Prot. Diode

Typical diode forward current as Diode transient thermal impedance
a function of forward voltage as a function of pulse width
IF = f(VF) ZthJH = f(tp)
14 101
IF (A)

ZthJC (K/W)
12

10
25°C 100

8
125°C

6 D = 0,5
0,2
10-1 0,1
4 0,05
0,02
0,01
2
0,005
0.000
0 10-2
0 0,5 1 1,5 2 2,5 VF (V) 3 10
-5
10
-4
10
-3
10
-2
10
-1
10
0 t p (s) 1
10 10

At With
tp = 250 µs D= tp / T
RthJH = 3,62 K/W

Figure 3 Brake Prot. Diode Figure 4 Brake Prot. Diode

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IF = f(Th)
50 12
IF (A)
Ptot (W)

10
40

30

20
4

10
2

0 0
0 50 100 150 Th ( o C) 200 0 50 100 150 Th ( o C) 200

At At
Tj = 150 ºC Tj = 150 ºC

copyright Vincotech 8 24 Mar. 2015 / Revision 1

 V23990-P640-G09-PM
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datasheet
Rectifier Bridge

Figure 1 Rectifier diode Figure 2 Rectifier diode

Typical diode forward current as Diode transient thermal impedance
a function of forward voltage as a function of pulse width
IF= f(VF) ZthJH = f(tp)
250 101
IF (A)

ZthJC (K/W)
200
25°C 125°C

100

150

D = 0,5
0,2
100
0,1
10-1 0,05
0,02
50
0,01
0,005
0.000

0 10-2
0 0,4 0,8 1,2 1,6 VF (V) 2 -5 -4 -3 -2 -1 0 t p (s) 1
10 10 10 10 10 10 10 10

At With
tp = 250 µs D= tp / T
RthJH = 1,04 K/W

Figure 3 Rectifier diode Figure 4 Rectifier diode

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IF = f(Th)
150 90
Ptot (W)

IF (A)

75
120

60

90

45

60

30

30
15

0 0
0 50 100 150 Th ( o C) 200 0 50 100 150 Th ( o C) 200

At At
Tj = 150 ºC Tj = 150 ºC

copyright Vincotech 9 24 Mar. 2015 / Revision 1

 V23990-P640-G09-PM
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datasheet
Ordering Code & Marking
Version Ordering Code in DataMatrix as in packaging barcode as
With Brake V23990-P640-G09-PM P640G09 P640G09
Without Brake V23990-P640-H09-PM P640H09 P640H09

Vinco WWYY Name Date code UL & Vinco Lot&Serial

Text
NNNNNNNNN UL NNNNNNNNN WWYY UL Vinco LLLLLSSSS
LLLLL SSSS
Name Lot number Serial Date code
Matrix
NNNNNNNNN LLLLL SSSS WWYY

Outline
Pin table
Pin X Y
1 33,5 0
2 30,7 0
3 26,4 0
4 23,9 0
5 21,4 0
6 18,9 0
7 11,9 0
8 7,5 0
9 4,7 0
10 0 0
11 0 2,5
12 0 5
13 0 7,5
14 0 22,5
15 2,5 22,5
16 5 22,5
17 12 22,5
18 14,5 22,5
19 17 22,5
20 24 22,5
21 26,5 22,5
22 29 22,5
23 33,5 17,1
24 33,5 14,6
25 33,5 7

Pinout

Identification
ID Component Voltage Current Function Comment
D1-D6 Rectifier 1600V 75 A Rectifier Diode
T1 IGBT 1200V 35 A Brake Switch
D7 FWD 1200V 35 A Brake Diode
D8 FWD 1200V 3A Brake Port. Diode

copyright Vincotech 10 24 Mar. 2015 / Revision 1

 V23990-P640-G09-PM
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datasheet

Packaging instruction
Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample

Handling instruction
Handling instructions for flow 0 packages see vincotech.com website.

DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured
characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further
notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising
out of the application or use of any product or circuit described herein; neither does it convey any license under its
patent rights, nor the rights of others.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the
express written approval of Vincotech.

As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use
provided in labelling can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

copyright Vincotech 11 24 Mar. 2015 / Revision 1