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[EE 211] Assignment 1

This document outlines the assignment details for the EE/CE – 211 Basic Electronics course at Habib University for Spring 2024, including due date, instructor, and total marks. It specifies the course learning outcomes and provides a series of questions related to semiconductor diodes, BJTs, and MOSFETs, focusing on their behavior and applications. Students are instructed to submit their assignments on time and follow the provided guidelines to ensure grading.

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alishba zaidi
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12 views

[EE 211] Assignment 1

This document outlines the assignment details for the EE/CE – 211 Basic Electronics course at Habib University for Spring 2024, including due date, instructor, and total marks. It specifies the course learning outcomes and provides a series of questions related to semiconductor diodes, BJTs, and MOSFETs, focusing on their behavior and applications. Students are instructed to submit their assignments on time and follow the provided guidelines to ensure grading.

Uploaded by

alishba zaidi
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Habib University

School of Science & Engineering


Course EE/CE – 211 – Basic Electronics
Semester Spring 2024
Assignment 1
Due Date Feb 12th, 2024
Instructor Ahmad Usman
Total Marks 100
Name: ___________________________________________Student ID: _________________
Note:
▪ Take a print of the assignment and solve on the space provided after every question. You can use extra
sheets for your answers. Attach them properly.
▪ No assignment shall be graded if submitted late and don’t comply the guidelines as mentioned above.

Course Learning Outcomes


After the completion of the course the student should be able to
CLOs Description Learning-
domain level
CLO - 1 Explain and understand the working and behavior of semiconductor diodes, Cog – 3
BJTs and MOSFETs in the modern electronic systems.
CLO - 2 Ability to analyze DC and AC the behavior of the semiconductor diodes, Cog – 4
BJTs, and MOSFETs in the modern electronic systems.
CLO - 3 Develop an ability to design DC power supplies, DC biasing circuits and Cog – 3
single stage amplifier circuits based on the concepts learned pertaining to
semiconductor diodes, BJTs, and MOSFETs, for various modern electronic
applications.

1
Question # 1 (CLO – 1, Points: 10, 2.5 + 2.5 + 5)
The surface of a Silicon (Si) wafer is (100) plane.
(a) Sketch the placement of Si atoms on the surface of the wafer.
(b) Determine the number of atoms per cm2 at the surface of the wafer.
(c) Repeat parts (a) and (b) for a surface of Si wafer to be (110) plane.

2
Question # 2 (CLO – 1, Point: 10, 2.5 + 2.5 + 2.5 + 2.5)
The Figure 1(a) below shows a crystalline plane. It has intercepts of 1a, 3a, and 1a on the x, y, z
axes, respectively. The side length of a cubic cell is “a”.
(a) What is the Miller index notation for the plane?
(b) What is the Miller index notation for the direction normal to plane?
(c) Assuming the crystal structure to be cubic, determine the Miller indices for
i) The plane shown in the Figure 1(b)
ii) The vector shown in the Figure 1(b)

Figure: 1

3
Question # 3 (CLO – 1, Points: 10, 2 + 3 + 3 + 2)
A crystalline lattice is characterized by the cubic cell as shown in the Figure 2. The single cell
has a single atom positioned at the center of the cube.
(a) What is the name of the lattice generated by the given unit cell?
(b) Determine the number of atoms per unit volume in the crystal. Provide your answer in
terms of the lattice constant, a.
(c) Assume the crystal has a (110) surface plane. Determine the number of atoms per unit area
whose centers lie on the plane (110) plane.
(d) A direction vector is drawn through the center of the atom in the unit cell. Specify the
Miller indices of the direction vector.

Figure: 2

4
Question # 4 (CLO – 2, Points: 10, 6 + 4)
The intrinsic carrier concentration of germanium (GE) is expressed as

where Eg = 0.66 eV.


(a) Calculate ni at 300 K and 600 K and compare the results with those for Silicon.
(b) Determine the electron and hole concentrations if Ge is doped with Phosphorous (P) at a
density of 5x1016 cm−3.

5
Question # 5 (CLO – 1, Points: 10, 5 + 5)
An n-type piece of silicon experiences an electric field equal to 0.1 V/μm.
a) Calculate the velocity of electrons and holes in this material.
b) What doping level is necessary to provide a current density of 1 mA/μm under these
conditions? Assume the hole current is negligible.

6
Question # 6 (CLO – 1, Points: 10, 5 + 5)
A n-type piece of silicon with a length of 0.1μm and a cross section area of 0.05μm × 0.05μm
sustains a voltage difference of 1 V.
a) If the doping level is 1017 cm-3, calculate the total current flowing through the device at T
= 300 K.
b) Repeat (a) for T = 400 K assuming for simplicity that mobility does not change with
temperature. (This is not a good assumption.)

7
Question # 7 (CLO – 1, Points: 10)
Due to a manufacturing error, the p-side of a pn-junction has not been doped. If ND = 3 × 1016
cm−3, calculate the built-in potential at T = 300 K.

8
Question # 8 (CLO - 2, Points: 10, 5 + 5)
An oscillator application requires a variable capacitance with characteristics shown in figure
below. Determine NA and ND.

9
Question # 9 (CLO – 2, Points: 10, 5 + 5)
Two identical pn junctions are placed in series.
a) Prove that this combination can be viewed as a single two-terminal device having an
exponential characteristic.
b) For a tenfold change in the current, how much voltage change does such a device require?

10
Question # 10 (CLO – 2, Points: 10, 5 + 5)
Figure shows two diodes with reverse saturation currents of IS1 and IS2 placed in parallel.
a) Prove that the parallel combination operates as an exponential device.
b) If the total current is ITOT, determine the current carried by each diode.

11

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