EN1803_Handout 7
EN1803_Handout 7
BJT Characteristics
46
Diode
– One current and one voltage
BJT
– Three currents and three voltages!
– They are interdependent
– How many characteristic graphs?
47
1
EN1014 Electronic Engineering 8/24/2022
BJT
Input voltage Output voltage
Input current Output current
Four Variables
Vi, Ii, Vo, Io
48
Characteristics of a BJT
Static Transfer
Characteristics
BJT
Static Input Static Output
Characteristics Characteristics
49
2
EN1014 Electronic Engineering 8/24/2022
50
51
3
EN1014 Electronic Engineering 8/24/2022
Base Current
BJT
52
All Characteristics
in one diagram
53
4
EN1014 Electronic Engineering 8/24/2022
54
An Amplifier
55
5
EN1014 Electronic Engineering 8/24/2022
56
BJT
Common Common
Common Base
Emitter Collector
Configuration
Configuration Configuration
(CB)
(CE) (CC)
57
6
EN1014 Electronic Engineering 8/24/2022
BJT
58
59
7
EN1014 Electronic Engineering 8/24/2022
Configuration CE CC CB
60
BJT in
Common Emitter Amplifier
Configuration
61
8
EN1014 Electronic Engineering 8/24/2022
62
63
9
EN1014 Electronic Engineering 8/24/2022
A Negative Resistance ?
IC
IB
IE
64
An Analogy…
67
10
EN1014 Electronic Engineering 8/24/2022
Conceptualizing …
Proportional Lighting in Amplifying Mode
68
69
11
EN1014 Electronic Engineering 8/24/2022
70
DC Load Line
VTRANSISTOR + VLOAD = VSUPPLY
VTransistor = VCE
VLoad = IC x RL
VSupply = V+ = VCC
VCE + IC x RL = VCC
71
12
EN1014 Electronic Engineering 8/24/2022
DC Load Line
VCE + IC x RL = VCC
IC x R L = - (VCE)+ VCC
𝑉𝐶𝐸 𝑉𝐶𝐶
𝐼𝐶 = − +
𝑅𝐿 𝑅𝐿
1 𝑉𝐶𝐶
𝐼𝐶 = − 𝑉𝐶𝐸 +
𝑅𝐿 𝑅𝐿
Y= m. X + C
72
1 𝑉𝐶𝐶
VCC/RL 𝐼𝐶 = − 𝑉𝐶𝐸 +
𝑅𝐿 𝑅𝐿
73
13
EN1014 Electronic Engineering 8/24/2022
[VCE,Q, IC,Q]
VCC/RL
IC,Q IB,Q
Collector Voltage
(VCE )
VCE,Q VCC
74
Operating Q Q
Point
(Q Point)
75
14
EN1014 Electronic Engineering 8/24/2022
1. Base Bias
2. Fixed Bias
76
Amplitude 1.5 V
Frequency 1 kHz
77
15
EN1014 Electronic Engineering 8/24/2022
78
DC Bias on Terminals
• Solution :
• Superimpose the small input AC signal on a DC
voltage.
79
16
EN1014 Electronic Engineering 8/24/2022
Biasing in CE Configuration
81
DC bias 2.3 V
Amplitude 1.5
Frequency 1 kHz
82
17
EN1014 Electronic Engineering 8/24/2022
DC voltage 2.3 V
AC Amplitude 1.5 V
Frequency 1 kHz
83
DC Analysis by Simulator
DC voltage=2.3 V
AC = 0 V
84
18
EN1014 Electronic Engineering 8/24/2022
85
1 𝑉𝐶𝐶
𝐼𝐶 = − 𝑉𝐶𝐸 +
𝑅𝐿 𝑅𝐿
IB,Q = 198 µA
86
19
EN1014 Electronic Engineering 8/24/2022
87
+VCC
RB RL
VBE
88
20
EN1014 Electronic Engineering 8/24/2022
Apply KVL
VBE + IB.RB = VCC
Analysis
89
Apply KVL
VBE + IB.RB = VCC
Designing
90
21
EN1014 Electronic Engineering 8/24/2022
91
92
22
EN1014 Electronic Engineering 8/24/2022
+VCC
RB RL
CC
CC
93
An Example Design
5V
40 µA
107
KΩ 1.25
KΩ
β = 50
ri
1 KΩ
(for ac)
94
23
EN1014 Electronic Engineering 8/24/2022
(2.5 V, 2 mA)
95
96
24
EN1014 Electronic Engineering 8/24/2022
97
98
25
EN1014 Electronic Engineering 8/24/2022
99
DC Analysis
100
26
EN1014 Electronic Engineering 8/24/2022
101
102
27
EN1014 Electronic Engineering 8/24/2022
103
Gain of an Amplifier
104
28
EN1014 Electronic Engineering 8/24/2022
𝐼𝑜,(𝑝𝑘−𝑝𝑘)
𝐴𝑖 =
𝐼𝑖,(𝑝𝑘−𝑝𝑘)
105
𝐼𝑜,(𝑝𝑘−𝑝𝑘)
𝐴𝑖 =
𝐼𝑖,(𝑝𝑘−𝑝𝑘)
106
29
EN1014 Electronic Engineering 8/24/2022
𝑉𝑜,(𝑝𝑘−𝑝𝑘)
𝐴𝑣 =
𝑉𝑖,(𝑝𝑘−𝑝𝑘)
107
𝑉𝑜,(𝑝𝑘−𝑝𝑘)
𝐴𝑣 =
𝑉𝑖,(𝑝𝑘−𝑝𝑘)
108
30
EN1014 Electronic Engineering 8/24/2022
𝑃𝑜
𝐺=
𝑃𝑖
109
𝑉𝑜 . 𝐼𝑜 𝑉𝑜 𝐼𝑜
𝐺= = . = 𝐴𝑣 . 𝐴𝑖
𝑉𝑖 . 𝐼𝑖 𝑉𝑖 𝐼𝑖
𝐺 = 𝐴𝑣 . 𝐴𝑖
110
31
EN1014 Electronic Engineering 8/24/2022
111
112
32
EN1014 Electronic Engineering 8/24/2022
Phase Inversion
113
Q Q
114
33
EN1014 Electronic Engineering 8/24/2022
115
Incorrect Q Point
116
34
EN1014 Electronic Engineering 8/24/2022
Incorrect Q Point
117
Q Point
118
35
EN1014 Electronic Engineering 8/24/2022
119
Thermal Runaway
Power is dissipated in the collector and hence it is made
physically larger than the emitter and base region.
As the power is dissipated the collector base junction
temperature increase.
The reverse leakage current ICBO increases due to the
flow of thermally generated minority carriers
IC = α IE + ICBO
120
36
EN1014 Electronic Engineering 8/24/2022
Thermal Runaway
Process is cumulative leading
eventually to the destruction
of the transistor.
Thermal runaway can be
prevented by using a heat
sink.
Emitter degenerative
feedback can also be used.
121
37