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23 viewsGate_Base Triggering Circuits
The document is a manual for the NIPECO2 Educational Trainer on Gate/Base Triggering Circuits, detailing various triggering methods for SCR and MOSFET/IGBT devices. It covers theoretical concepts, practical experiments, and the design and features of the trainer kit, including different triggering circuits and their applications. The manual serves as a comprehensive guide for understanding and experimenting with power semiconductor devices and their control mechanisms.
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Harshil PanchalCopyright
© © All Rights Reserved
Available Formats
Download as PDF or read online on Scribd
0% found this document useful (0 votes)
23 viewsGate_Base Triggering Circuits
The document is a manual for the NIPECO2 Educational Trainer on Gate/Base Triggering Circuits, detailing various triggering methods for SCR and MOSFET/IGBT devices. It covers theoretical concepts, practical experiments, and the design and features of the trainer kit, including different triggering circuits and their applications. The manual serves as a comprehensive guide for understanding and experimenting with power semiconductor devices and their control mechanisms.
Uploaded by
Harshil PanchalCopyright
© © All Rights Reserved
Available Formats
Download as PDF or read online on Scribd
/ 14
Educational Trainer on
Gate / Base Triggering Circuits
(Model No - NIPECO2)
Version 2.0
La
3
NiTech
Developed by:
National Infotech, Surat. Chapter 1 Inroduction
Chapter 2 Theoretical Concepts
2.1. Triggering circuits for SCR (Latching devices)
aaa
22
213
2a
De Triggering
Resistance Triggering(R-Tviggering)
RCTriggering
UIT Triggering
2.2. Triggering circults for MOSFET/IGET
CChapter3 About The Trainer
31 Pictorial View
32. Front Panel Description
324
322
3224,
3222
3223
3224
3225
3226
3227
Control supply
Triggering Creu supply
Dc Triggering
Triggering
RC Triggering
UJT Triggering (Relaxation Osclator)
SCR Power Cireut
‘MOSPET/IGBT Gate Driver Cireult
MOSFET Power Circuit
33 Protection
34 Precautions
35 General Procedure for Practical
Chapter 4 Experiments
Experiment: 1 Study of DCtrigering circuit ofan SCR
‘Experiment: 2 Seudy of Resistance triggering circult of an SCR.
Experiment: 3 Study RC triggering circuit ofan SCR
Experiment: 4 Study UJT triggering circuit ofan SCR
CONTENT
a
3
a
3
3
a
4
u
4
18
18
16
16
16
W
wv
18
0
20
Experiment 5 Study of Pulse Width Modulation technique for MOSFET/IGET 21
Experiment: 6 Study of electrical isolation in gate triggering circu of MOSFET/IGBT
2
References
LUstof Components used in Trainer
Liability Diselaimer
m
2
2s Chapter 1 Introduction
electronics
Power semiconductor devices ae the major workhorse in industri
‘They can be classified as controlled or uncontrolied devices, latching or controllable
devices, Controllable power semiconductor devices are further classified as current
‘controlled and voltage controlled devices.
‘Thyristor / Silicon Controlled Rectifier (SCR) isa latching semiconductor device
mainly used for controled rectification. In SCR Phase Control, the firing angle or point
during the halfcyeleat which the SCR is triggered, determines the amount of current,
Which Nows through the device. Itacts as high-speed switch whichis open forthe first
part ofthe cycle, and then clases to allow power flow after the trigger pulse is applied
Depending upon the method used forthe gate triggering itis possibleto contol the ring
angle ofan SCR From 0 to 180 degrees and hence the power.
MOSFET / IGBT are voltage controled semiconductor switches; they require
application of voltage levels at the gate terminal to make the device ON or OFF. These
ovices draws minimum current to charge / discharge capacitance between gate and
power terminals because of the insulated gate terminal, Driving, isolation is other
Important requirement for good triggering crelts.
‘Aira
‘This manual is intended to give you a description of Gate-Base Triggering Circuits for
latching devices (SCR/TRIAC) and voltage controlled devices (IGBT/MOSFET).
Description about GATE-BASE DRIVE CIRCUITSTRAINER Is discussed followed by the
‘working procedure involved withthe kt
Features:
> DC.RLRC, UIT triggering for latching devices are posible,
% MOSFET/IGBT gate triggering is posible with PWM technique and optical
feolation.
“Test points are avallable for observation of gate triggering pulses.
‘Kit works with directly 230V, S02 AC supply.
230:30V transformer is provided fr creut isolation
‘Switches are provided so that individual configurations can be tested and
‘observed.
> Necessary fuses are provided or protection.
3
Chapter 2 Theoretical Concepts
(ate / Base drive circuits are used to turn power switch from off state to on state
or vice versa. Signal processing circuits which generate the logic control signals not
Considered part of the drive cireut, Drive circuit amplifies control signals to lovels
‘required to drive power switch Drivecircuthassignlfcant power capabilities compared
to logic level signal processing circuits. I also used to provide electrical isolation when
‘needed between povrer switch and loge level signal processng/control creas
Power semiconductor devices are classified as controlled or uncontrolled devices,
latching or controllable devices. Cntrolable power semiconductor devices are further
classified as current controlled and voltage controlled devices
‘This trainer is designed to do experimentation on gate triggering circuit for (I)
Latching devices; (SCR/TRIAC) and (i) Voltage controlled devices (MOSFET/IGBT),
2A. Triggering circuits for SCR (Latching devices)
‘SCR canbe switched from off state toon state in several ways, These are forward
voltage triggering, triggering, temperature triggering, light triggering and gate
Uiggering. Gate triggering is, however the most common method of turing on the SCRs,
‘because this method lend itself accurately for turning on the SCR atthe desired instant
cof time. In addtion, gate triggering isan efficient and reliable method. With ths set up
the following four methods of gate triggering circuits are studied
4, DCtriggering eireut
2, Resistance triggering circuit
3. RC (phase shit) triggering circuit
4. Synchronized UJ triggering circult (Relaxation oscillator)
244 DC Triggering
SCR conducts when itis forward biased and required gate current to turn onthe
device is provided, These basic facts can be demonstrated withthe help ofthis circu.
(Once the SCRis turned on, even the gate is removed; the device remains in on state. The
‘same can be turned off by momentarily bringing down the anode current below holding
‘current level. This circuit is very rarely wsed in useful applications asthe gate power
Aissipation is one ofthe major disadvantages ofthis system. wed FL
24.2 Resistance Triggering(R-Triggering)
Resistance trigger circlts ae the simplest and most economical. They however,
suffer froma limited range of firing angle contrl (0 to 90 degrees). Figure 2.2 shows the
basic resistance triggering circuit. Ry Is the variable resistance, Ris the stabilizing
resistance. As reslstanceR;, Ry are large, gate trigger circuit draws small current, Diode D
allows the flow of current during positive half eyle only Le gate voltage is half wave DC
pulse, The amplitude of tis DC pulse canbe controlled by varying R-
Figure 22 Rese igtrng
‘The potentiometer setting Re determine he gate voltage amplitude. When is
large, current" ssmall and the voltage across Re. gate voltage is equal to Ris also
suallasshown\n gure 23(3) As Yp(peako gate voltage, Isles than Ygat tiger
voltage), SCR will not turn on. Therefore load voltage and load current are zero and
supply voltage V appears as Waross SCR as shown in igure 2.3(a), Note that trlgger
circuit consists of resistance only, Y Is therefore in phase with source voltage. R2 is
adjusted such that Vpy=Voe In figure 2.3(0). Ths ves the value of firing angle as 90
degrees The various current an voltage wavelorms are shown in gure. 3b), in lgure
23(€,Ngp>Voe As So0n as ¥, Becomes equal to Velo the firs time SCR is turned on, The
s
resistance triggering cannot give fring angle beyond 90 degree. Increasing Yi
sboveV,,turn on the SCR at firing angle less than 90 degree, When ¥ reaches Voe forthe
first time, SCR fires, gate losses control and ¥, Is reduced to almost zero (about 1V) value
8s shown In this method, the firing angle alpha Is proportional to R;. As Rais increased
fom smal value, fring angle Increases As the fring angle control fom zero degree to
90 degree, the hal wave power output canbe controled from 100% for alpha = 0) down
05096 (for alpha = 90 degrees).
@ &) oO
oue23 Thiago eo p< Re Oy
leach
Wik a,=0 a , Fel R+R+R)2V.R
RRR Fel R#B)2R(ba-Tn)
24.3. RCTriggering
‘The limited range of fring angle contr by resistance firing circuit can be
overcome by RC
circult.A simple RC trigger creult giving full wave output voltage
|s shown in Figure 24, In this circu, the intial voltage from which the capacitor "C"
charges i almost zero, The capacitor "Cf set to this low positive voltage bythe clamping
action of SCR gate, When capacitor charges toa voltage equal to Vje SCR triggers and rectified voltage Veappears across load as
alphas more than 90 degrees and alphas less than 90 degrees.
eee
@ (b).
rawre25Myrisrendonraap weno (Woh aR waco
|
| Ree he yey
| YE lah Hy tes astetecte
In Agure, the waveforms are shown for
244 UIT Triggering
‘synchronized UIT trgger circuit using an UIT is shown in gure 2.6, Diodes D1-
Di recites AC toDC Resistance R; lowers Yc toa sutable value forthe zener diode and
UIT. Zener diode "2" functions to clip the rectified voltage toa standard level V, which
Femains constant except near the ae 2er0,as shown in figure:This voltage Vi applied to
the charging circuit RC. Current (charges capacitor Cat arate determined by R. Voltage
‘cross eapacitor Cis marked by in figure 2.6, When voltage V-reaches the unjunction
‘threshold voltage, the E-B1 junction of UJT breaks down and the capacitor C discharges
as shown in figure 2.7 which produces the gate trigger voltage. So the SCR fires during
each half cycle. As soon as the capacitor discharges, it starts to recharge. Rate of rise of
‘apacttor voltage is contrlled by varying R2. The firing angle can be controlled up to
bout 150 degrees, This method of controlling the output power by varying the charging
resistance R2 i called ramp control, manual control or open loop control
R
‘scr
Gates
owe 26 9nchronize UT wiegering cet (elaestin Oxilotor)
‘As the ener voltagel;goes to zero atthe end af exch cycle, the synchronization of
the trigger circuit with supply voltage across SCR Is achieved Thus the time T
when
the pulse is applied to SCR forthe ist time, will remain constant forthe same value of R
‘Small variation in supply voltage and frequency are not going to elect the etcult
‘operation In case Ris reduced so that Ve reaches UIT threshold voltage twice fa each half
‘yc as shown in figure 27, then there willbe 2 pulsesin each half cycle As the frst pulse
willbe able to turn on the SCR, second pulse n each cycle is redundant. ABE ER
gure 27 Generation of ott pals for he grid UT eget
2.2 ‘Triggering circuits for MOSFET/IGBT
For a voltage controlled devices lke MOSPET / 1GBT continuous application of
positive voltage pulse at gate terminal is required to tum onthe device. For turn off the
ovice either zero voltage or negative voltae s continuously appliod at gate terminal In
‘most ofthe practical applications they are connected either in bridge configuration orn
series with supply voltage. Isolated gate driving pulses willbe required to trigger them in
‘his configuration. Pulse Width Modulation (PWM) is normally done n order to provide
variable width pulses, For PWM normally repetitive waveform (Triangle /Ramp wave) is
‘compared with DCevel.
Figure 2.8 shows the typical block diagram of triggering circuit for voltage
controlled device. This triggering circut provides bipolar output, pulse width modulated,
lectrically isolated gate driving tothe power device. The triggering circuit has three main
bullding clocks: (triangle wave generator; (comparator; an (optical soation,
‘gure 20 Block tagram of eager cco MOSFET GET
‘Comparator will compare triangle wave with variable delevel, Comparator output
‘ill be positive saturation voltage for de level higher than triangle wave and will he
negative saturation voltage for de level lower than triangle wave. Varying de level wil
change the point of comparison between de voltage and triangle wave an in tura wil
°
‘change the width ofthe output pulse. Varying de level from zero to upto peak value of
telangle wave will change the duty rato of output pulse from zero to 100 percent. Figure
29 shows the waveforms at diferent stages in triggering clrcut,
eure 29 PUN generator warform
Figure 2.10 shows the detall circult of the individual blocks. Op-amp based
oscillator ercutis designed to generat trlangle wave. As required this triangle i further
compared with dc level, whichis generated by making potential arrangement across de
powersupply.
gure 210 Bleck lagram of igen cel or MOSFET IG (TRAINER RIT)
‘The comparator output does not have required shrinking capability to drive
power semiconductor switch (MOSFET/IGBT, itis anormal method to pas this logical
signal through driver and Isolation stage before it is actually connected to the power
‘switch. TLP 250 based driving circuit is designed as shown in igure 2.10, Chapter 3 About The Trainer
“The figure on the next page shows the pictorial view of the front panel af the kit
“There are mainly five sections: ()Supply section: (i) Tiegering/ pulse generator section
(SCR) (i) SCR power circuit (i) Triggering pulse generator section (MOSFET/IGBT) and
(&) MOSFET/IGBT power circuit Doted connections are required to be done externally
‘whereas the hard line indicates that the connections are internally done, The distinct
features ofthe trainer areas listed below:
> Power Devices terminals are terminated at banana connector for easier
> Power switch for control supply
> 30VAC, 20V DC power supply is generated internally and connected to various
power configurations
> Kitworks with directly 230V, SOHz AC supply. 230:30V transformer also provides
circuit isolation,
> Switch is provided to power on the triggering circults.1A fuse Is provided for
circuit protection.
1 Separate gate driving and power circuits for SCRand MOSFET/IGBT.
3.4 Pletorial View
‘As shown in igure 3.1 on next page
EE
Pace
wOSFET POWER GRCUTT
Pa
n
\
'
{
i
i
: 3.2. FrontPanel Description
3.2.1. Control supply
Itis a power on/off swite fr the supply to the contrl circuitry. Via plugging 230V,
Sottz, AC source tothe it and closing this switch, user can provide control supply tothe
vit
3.2.2 Triggering circu supply
32.2.4 DCTriggering
This circuit generates the triggering pulses which wil turn on the SCR power
circuit section. Connect the gate (6) and eathode (K) ofthe DC Triggering section to the
respective gate and cathode terminals ofthe SCR power circuit.
3222 — RTriggering
This circuit generates the uiggering pulses which wil tum on the SCR power circult
section, Connect the gate (6) and cathode (X) ofthe R Triggering section tothe respective
gate and cathode terminals ofthe SCR power circuit.
3223 — RCTriggering
‘This circult generates the triggering pulses which will turn on the SCR power
circut section, Connect the gate (G) and cathode (K) ofthe RC Triggering section to the
respective gate and cathode terminals ofthe SCR power circuit.
3224 UT Triggering (Relaxation Oscillator)
‘This circuit generates the triggering pulses which will tar on the SCR power
‘rcuit section, Connect the gate (G) and cathode (K) of the UIT Triggering section to the
respective gate and cathode terminals of the SCR power circuit. Note that the pulse
transformers used to isolate the SCR power circuit section fromthe UJT triggering cireut
3225 SCRPower Circuit
“4 ing eecults are fo 33 Pr
1 gate pulses which are generated from the different trig 3 Protection
Demet as ace connect the CRO across
1. 3A fuse Is provided in the individual fring circultto control the load current.
2 Internal SCR and MOSFET/IGHT load circuits are provided whieh avoids
tothe SCR power cireult To observe the load cirult waveforms,
the load terminals shows inthe igure
‘overloading because of external load connection.
32.26 MOSFET/IGBT Gate Driver Cireult = 3, SCR Power circult is fed with golted 20V, 50 Hz supply which helps for isolated
PSE voltage and current waveform viewing onthe oscilloscope.
4 MOSFET/IGBT Power cei is fed with te 20¥ DC supply which Reps for |
Isolated
Voltage and current waveform viewing on the osllloscope.
5. Proper isolation is provided between the firing circuit and power elrcult. i
6. Proper heat dissipation arrangement is provided for power device to avoid |
Scheme for gate pulse generation for oltage-
