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Assignment 2

The document outlines various tasks related to voltage divider bias circuits, including deriving expressions for Eth, IB, and VCE, as well as analyzing fixed and emitter bias configurations. It also includes design specifications for voltage divider circuits, stability factors, and the effects of component variations on the Q point of transistors. Additionally, it covers oscillator operations, crystal parameters, and comparisons between different types of transistors.

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Roopa Tadur
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18 views

Assignment 2

The document outlines various tasks related to voltage divider bias circuits, including deriving expressions for Eth, IB, and VCE, as well as analyzing fixed and emitter bias configurations. It also includes design specifications for voltage divider circuits, stability factors, and the effects of component variations on the Q point of transistors. Additionally, it covers oscillator operations, crystal parameters, and comparisons between different types of transistors.

Uploaded by

Roopa Tadur
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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1.

Derive an expression for Eth, IB and VCE for voltage divider bias circuit using
exact analysis.
2. Obtain the expressions for the coordinates of Q point for I) Fixed bias
configuration ii) Emitter bias configuration.
3. Derive an expression for IC and VCE for voltage divider circuit using Approximate
analysis
4. Design a voltage divider bias circuit for the specified condition VCC=12V,
VCE=6V, IC=1mA, S(ICO)=20, β=100, VE=1V
5. Draw the thevenin’s equivalent circuit for voltage divider bias and
determine its stability factor S(Ico) and also S(VBE)
6. What are the factors which an amplifier makes to be stabilized
7. Explain with the help of load line the effect of variation of Vcc, RB and RC on Q point
of a transistor
8. In a voltage divider circuit of BJT RC=4KΩ, RE=1.5KΩ, R1=39KΩ, R2=3.9KΩ, Vcc=18V
and β=70. Find ICQ and VCEQ
9. The emitter bias configuration has the following specifications
ICQ= 1/2(Icsat), where Icsat=8mA, Vc=18v, β=110. Determine RB, RC and RE
10. Design a voltage divider bias circuit for the specified conditions.
11. Vcc=10V, VCE= 5V, Ic=2mA, S(Ico)≤5, β=50, Rc=1.5KΩ, Find R1 and R2.
12. State and Explain Bark Hausen Criteria using the block diagram
13. With near circuit diagram explain the operation of RC phase shift oscillator,
Wien bridge oscillator, Hartley Oscillator and Colpitt’s oscillator, Crystal
oscillator.
14. A crystal has the follower parameters L=0.3344H, C=0.065pF, C M=1pF and
R=5.5KΩ. Calculate i) Series Resonance frequency ii) Parallel Resonance
frequency
15. A crystal L=0.4 H, C=0.085 pF and CM=1 pF with R=5 kΩ. Find
i) Series resonant frequency
ii) Parallel resonant frequency
iii) By what percent does the parallel resonant frequency exceed the
series resonant frequency?
iv) Find the Q factor of the crystal.
16. In a transistorized Hartley oscillator the two inductances are 2mH and 20µH, while
the frequency is to be changed from 950KHz to 2050KHz. Calculate the range over
which the capacitor is to be varied.
17. In a Colpitts oscillator C1=C2=C and L=10 µH . The frequency of oscillations is
500KHz. Determine the value of C
18. Compare BJT and FET
19. Compare BJT and MOSFET

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