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Comprehensive Analysis On Solar PV System Course Lec 1to Lec 8

The document outlines the principles of solar cells, focusing on the atomic structure and behavior of semiconductors, specifically p-type and n-type. It explains the formation of a p-n junction, the movement of electrons and holes, and the resulting electric field that drives current in solar photovoltaic systems. Additionally, it covers various classes related to solar module characteristics, temperature effects, and configurations in solar arrays.

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Zubaeer Bin Shams
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12 views38 pages

Comprehensive Analysis On Solar PV System Course Lec 1to Lec 8

The document outlines the principles of solar cells, focusing on the atomic structure and behavior of semiconductors, specifically p-type and n-type. It explains the formation of a p-n junction, the movement of electrons and holes, and the resulting electric field that drives current in solar photovoltaic systems. Additionally, it covers various classes related to solar module characteristics, temperature effects, and configurations in solar arrays.

Uploaded by

Zubaeer Bin Shams
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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Class 01 - Working Principle of Solar Cells

Class 02 - How Electrons, Protons, Neutrons, Silicon,


Phosphorus and Boron Work :
Class 03 - Atomic Structure of Solar Materials

The last or outermost orbit is also known as valence orbit or shell and the electrons of valence orbit is
known as valance electrons. These valence electrons take part in bonding with other atoms. The
electrons other than valence electrons are known as core electrons which does not take part in bonding
with other atoms.

P-type and n-type semiconductor:

1. The p-type semiconductor is formed by adding trivalent impurities (Boron) to the pure or intrinsic
semiconductor

2. The n-type semiconductor is formed by adding pentavalent impurities (Phosporus) to the pure or
intrinsic semiconductor.
If p-type semiconductor is joined with n-type semiconductor, a p-n junction is formed. The region in
which the p-type and n-type semiconductors are joined is called p-n junction which is also known as
depletion layer. This p-n junction separates n-type semiconductor from p-type semiconductor.

In n-type semiconductors, large number of free electrons is present due to this they get repelled from
each other and try to move from a high concentration region (n-side) to a low concentration region (p-
side). Moreover, near the junction free electrons and holes are close to each other. According to
coulombs law there exist a force of attraction between opposite charges.

Hence, the free electrons from n-side attracted towards the holes at p-side. Thus, the free electrons
move from n-side to p-side.

One electron increased at Boron Boron atom will be negatively ionized


atom but proton remain same. Phosphorous atom will be positively
One electron decreased at ionized
Phosphorous atom but proton remain
same

Driving Force:
Due to the electron migration, the N side boundary becomes slightly positively charged, and the P side
becomes negatively charged. An electric field will definitely be formed between these charges. This
electric field produces the necessary driving force.
The free electrons that are crossing the junction from n-side provide extra electrons to the atoms on the
p-side by filling holes in the p-side atoms. The atom that gains extra electron at p-side has more number
of electrons than protons. We know that, when the atom gains an extra electron from the outside atom
it will become a negative ion.
Thus, each free electron that is crossing the junction from n-side to fill the hole in p-side atom creates a
negative ion at p-side. Similarly, each free electron that left the parent atom at n-side to fill the hole in
p- side atom creates a positive ion at n-side.
The PN Junction

The PN Junction is formed when p-type region is joined with the n-type region. This is a basic structure
forms a semiconductor diode. The n-type region has many free electrons (majority carriers) and only a
few thermally generated holes. The p-type region has many holes (majority carriers) and only a few
thermally generated free electrons (minority carriers). The free electrons in the n region are randomly
drifting in all directions. The basic silicon structure at the instant of junction formation showing only the
majority and minority ca carriers. Free electrons in the n region near the pn junction begin to diffuse
across the junction and fall into holes near the junction in the p region.
Class 04 - Formation of P-N junction
Class 05 - Solar Photovoltaic Modules & PV cell Electrical
characteristics (Voc, Ish, Vmpp, Impp)
String
Array
Class 06 - a. Effect of temperature and irradiance b.
Creation of solar string c. solar string voltage & current.
d. Creation of solar array. e. connection to PV inverter
Class 07 - a. Effect of shaded cell b. Bypass diode and
Blocking diode
Class 08 - a. Types of busbars, b. Tilt Angle
Approximated method

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