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MC Pe Ce 164

The document is an examination paper for the Basic Electronics course at the University of Mines and Technology, Tarkwa, for the second semester of May 2016. It includes instructions for answering questions, a variety of questions on semiconductor devices, energy diagrams, diode behavior, transistor characteristics, and circuit analysis. Students are required to attempt all questions in Section A and select additional questions from Section B.

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11 views2 pages

MC Pe Ce 164

The document is an examination paper for the Basic Electronics course at the University of Mines and Technology, Tarkwa, for the second semester of May 2016. It includes instructions for answering questions, a variety of questions on semiconductor devices, energy diagrams, diode behavior, transistor characteristics, and circuit analysis. Students are required to attempt all questions in Section A and select additional questions from Section B.

Uploaded by

acquahken41
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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UNIVERSITY OF MINES AND TECHNOLOGY, TARKWA

SECOND SEMESTER EXAMINATIONS, MAY 2016


COURSE NO : MC/PE/CE 164
COURSE NAME: BASIC ELECTRONICS
CLASS : BSc I TIME: 3 HOURS

Name: …………………………………………………Index Number: …………………………..

Instructions
Attempt all questions in Section A and Question 1 and any other question in Section B.

SECTION B

Attempt Question 1 and any other question in this section. All questions carry equal marks.

QUESTION 1

Draw the electrical symbol for the following semiconductor devices: diode, Zener diode, varactor diode,
LED, photodiode, Schottky diode, tunnel diode, NPN transistor, PNP transistor, n-channel JFET, p-channel
JFET, n-channel E-MOSFET, p-channel E-MOSFET, n-channel D-MOSFET, p-channel D-MOSFET, Dual-
gate n-channel E-MOSFET, Dual-gate n-channel D-MOSFET, IGBT, SCR, LASCR.
[20 marks]

QUESTION 2

a. By use of energy diagrams, differentiate between conductors, semiconductors, and insulators.


[2 marks]
b. Explain why a series resistor is necessary when a diode is forward-biased. [2 marks]
c. What would cause the barrier potential of a silicon diode to decrease from 0.7 V to 0.6 V?
[2 marks]
d. Calculate the average value of a half-wave rectified voltage with a peak value of 200 V.
[2 marks]
e. Consider the circuit given in Figure 1:
i. What type of circuit is this? [2 marks]
ii. What is the total peak secondary voltage? [2 marks]
iii. Sketch the voltage waveform across RL. [2 marks]
iv. What is the average value of the output waveform? [2 marks]
v. What is the peak current through each diode? [2 marks]
vi. What is the PIV for each diode? [2 marks]

Page 1 of 2
Figure 1 Electric circuit for Question 2

QUESTION 3

a. Why is the base current in a transistor so much less than the collector current? [2 marks]
b. In a certain transistor circuit, the base current is 2 percent of the 30 mA emitter current. Determine the
collector current and βDC. [3 marks]
c. A certain transistor is to be operated at a collector current of 50 mA. How high can VCE go without
exceeding a PD(max) of 1.2 W? [5 marks]
d. To achieve an output of 10 V with an input of 300 mV, what voltage gain is required?
[2 marks]
e. Determine the value of the collector resistor in an NPN transistor amplifier with βDC = 250, VBB = 2.5
V, VCC = 9 V, VCE = 4 V, and RB = 100 kΩ. [5 marks]
f. Determine IC(sat) for the transistor in Figure 2. What is the value of IB necessary to produce saturation?
What minimum value of VIN is necessary for saturation? Assume VCE(sat) = 0 V. [3 marks]

Figure 2 Transistor circuit for Question 3

S. Nunoo

Page 2 of 2

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