Course: Introduction to VLSI design (19EEC334)

Unit-III: BiCMOS Fabrication process

Y.V.Appa Rao
Assistant Professor
Department of EECE.
GITAM Institute of Technology (GIT)
Visakhapatnam – 530045
Email: [email protected]
 NPN-BJT

C B E

N-Plus
Emitter
P+ p+
P-Base

N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
BICMOS STRUCTURE

NMOS PMOS NPN-BJT

S G D S G D C B E

N-Diff N-Diff P-Diff P-Diff N-Plus

Emitter

N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
P-SUBSTRATE IS TAKEN

P-SUBSTRATE

P-TYPE SUBSTRATE IS COVERED WITH OXIDE LAYER

P-SUBSTRATE
A WINDOW IS OPENED THROUGH OXIDE LAYER

P-SUBSTRATE

THROUGH THE WINDOW N TYPE IMPURITIES IS HEAVILY DOPED

N Plus Buried Layer

P-SUBSTRATE
P-EPITAXY LAYER IS GROWN ON THE ENTIRE SURFACE

P-EPITAXY

N Plus Buried Layer

P-SUBSTRATE
THE ENTIRE SURFACE IS COVERED WITH OXIDE LAYER AND TWO WINDOWS
ARE OPENED THROUGH THE OXIDE LAYER

P-EPITAXY

N Plus Buried Layer

P-SUBSTRATE
THROUGH THE TWO WINDOWS N-TYPE IMPURITIES ARE DIFFUSED TO
FORM N-WELLS

N-Well
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THREE WINDOWS ARE OPENED THROUGH THE OXIDE LAYER , IN THESE
THREE WINDOWS THREE ACTIVE DEVICES NMOS,PMOS AND NPN BJT
ARE FORMED

N-Well
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THE ENTIRE SURFACE IS COVERED WITH THINOX AND POLYSILICON
AND ARE PATTERNED TO FORM THE GATE TERMINALS OF THE NMOS
AND PMOS

N-Well
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THROUGH THE 3RD WINDOW THE P-IMPURITIES ARE MODERATELY
DOPED TO FORM THE BASE TERMINAL OF BJT
N-WELL ACTS LIKE THE COLLECTOR TERMINAL

N-Well P-Base
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THE N-TYPE IMPURITES ARE HEAVILY DOPED TO FORM

1.SOURCE AND DRAIN REGION OF NMOS

2.EMITTER TERMINAL OF BJT
3.AND INTO NWELL COLLECTOR REGION FOR CONTACT PURPOSE

N-Diff N-Diff N-Plus

Emitter

N-Well P-Base
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THE P-TYPE IMPURITES ARE HEAVILY DOPED TO FORM

1.SOURCE AND DRAIN REGION OF PMOS

2.AND INTO P-BASE REGION FOR CONTACT PURPOSE

N-Diff N-Diff P-Diff P-Diff N-Plus

Emitter

N-Well P-Base
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THE ENTIRE SURFACE IS COVERED WITH THICK OXIDE LAYER

N-Diff N-Diff P-Diff P-Diff N-Plus

Emitter

N-Well P-Base
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THE ENTIRE SURFACE IS COVERED WITH THICK OXIDE LAYER AND IS
PATTERNED FOR CONTACT CUTS

N-Diff N-Diff P-Diff P-Diff N-Plus

Emitter

N-Well P-Base
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
METAL CONTACTS ARE FORMED

NMOS PMOS NPN-BJT

S G D S G D C B E

N-Diff N-Diff P-Diff P-Diff N-Plus

Emitter

N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE