NEET : CHAPTER WISE TEST-11

SUBJECT :- PHYSICS DATE..........................................................

CLASS :- 12th NAME.........................................................
CHAPTER :- SEMICONDUCTOR SECTION.....................................................
(SECTION-A)
1. In a semiconductor 8. The mobility of free electron is greater
(A) There are no free electrons at any than that of free holes because
temperature (A) The carry negative charge
(B) They are light
(B) The number of free electrons is more
(C) They mutually collide less
than that in a conductor (D) They require low energy to continue their
(C) There are no free electrons at 0 K motion
(D) None of these
9. The maximum energy of the electrons
2. When a semiconductor is heated, its released in photocell is independent of
resistance (A) Frequency of incident light.
(A) Decreases (B) Intensity of incident light.
(B) Increases (C) Nature of cathode surface.
(C) Remains unchanged (D) None of these.
(D) Nothing is definite
10. In the forward bias arrangement of a PN-
junction diode
3. The valence of the impurity atom that is to
(A) The N-end is connected to the positive
be added to germanium crystal so as to terminal of the battery
make it a N-type semiconductor, is (B) The P-end is connected to the positive
(A) 6 (B) 5 (C) 4 (D) 3 terminal of the battery
(C) The direction of current is from N-end
4. Silicon is a semiconductor. If a small to P-end in the diode
amount of As is added to it, then its (D) The P-end is connected to the negative
terminal of battery
electrical conductivity
(A) Decreases 11. The electrical resistance of depletion layer
(B) Increases is large because
(C) Remains unchanged (A) It has no charge carriers
(D) Becomes zero (B) It has a large number of charge carriers
(C) It contains electrons as charge carriers
(D) It has holes as charge carriers
5. Which statement is correct
(A) N-type germanium is negatively charged 12. In the circuit given below, the value of the
and P-type germanium is positively charged current is
PN 300 + 1V
(B) Both N-type and P-type germanium are + 4V
neutral
(A) 0 amp (B) 10 2 amp
(C) N-type germanium is positively charged (C) 10 2 amp (D) 10 3 amp
and P-type germanium is negatively charged
(D) Both N-type and P-type germanium are 13. On increasing the reverse bias to a large
negatively charged value in a PN-junction diode, current
(A) Increases slowly
(B) Remains fixed
6. In P-type semiconductor the majority and
(C) Suddenly increases
minority charge carriers are respectively (D) Decreases slowly
(A) Protons and electrons
(B) Electrons and protons 14. In a PN-junction diode not connected to
(C) Electrons and holes any circuit
(A) The potential is the same everywhere
(D) Holes and electrons
(B) The P-type is a higher potential than
the N-type side
7. If ne and nh are the number of electrons (C) There is an electric field at the junction
and holes in a semiconductor heavily directed from the N- type side to the P-
doped with phosphorus, then type side
(D) There is an electric field at the junction
(A) ne  nh (B) ne  nh
directed from the P-type side to the N-type
(C) ne  nh (D) ne  nh side
PG #1
15. The reason of current flow in P-N junction 23. The logic behind ‘NOR’ gate is that it gives
in forward bias is (A) High output when both the inputs are low
(A) Drifting of charge carriers (B) Low output when both the inputs are low
(B) Minority charge carriers
(C) High output when both the inputs are high
(C) Diffusion of charge carriers
(D) All of these (D) None of these

16. Avalanche breakdown is due to 24. If A and B are two inputs in AND gate,
(A) Collision of minority charge carrier then AND gate has an output of 1 when
(B) Increase in depletion layer thickness the values of A and B are
(C) Decrease in depletion layer thickness
(A) A = 0, B = 0 (B) A = 1, B = 1
(D) None of these
(C) A = 1, B = 0 (D) A = 0, B = 1
17. Zener breakdown in a semi-conductor
diode occurs when 25. Which logic gate is represented by the
(A) Forward current exceeds certain value
(B) Reverse bias exceeds certain value following combination of logic gates
(C) Forward bias exceeds certain value A
(D) Potential barrier is reduced to zero Y

18. Function of rectifier is B

(A) To convert ac into dc
(B) To convert dc into ac (A) OR (B) NAND
(C) Both (A) and (B) (C) AND (D) NOR
(D) None of these
26. According to Eistein’s photoelectric
19. Consider the following statements A and B equation, the graph between the kinetic
and identify the correct choice of the given energy of photoelectrons ejected and the
answers
frequency of incident radiation is
(A) A zener diode is always connected in
reverse bias
(B) The potential barrier of a PN junction
lies between 0.1 to 0.3 V approximately
(A) A and B are correct (A)
(B) A and B are wrong
(C) A is correct but B is wrong
(D) A is wrong but B is correct

20. Symbolic representation of photodiode is

(A) (B)
(B)
(C) (D)

21. The following truth table corresponds to

the logic gate
A 0 0 1 1
B 0 1 0 1
X 0 1 1 1
(A) NAND (B) OR (C)
(C) AND (D) XOR

22. For the given combination of gates, if the

logic states of inputs A, B, C are as follows
A = B = C = 0 and A = B = 1, C = 0 then
the logic states of output D are

A
B
(D)
G2
G1
D
C
(A) 0, 0 (B) 0, 1
(C) 1, 0 (D) 1, 1
PG #2
27. The output of OR gate is 1 32. In good conductors of electricity, the type
of bonding that exists is :
(A) If both inputs are zero
(A) Ionic (B) Vander Waals
(B) If either or both inputs are 1 (C) Covalent (D) Metallic
(C) Only if both input are 1
33. If VA and VB denote the potentials of A
(D) If either input is zero and B, then the equivalent resistance
between A and B in the adjoint electric
circuit is-
28. A gate in which all the inputs must be low
to get a high output is called 10
(A) A NAND gate (B) An inverter
(C) A NOR gate (D) An AND gate A B
10

29. How many NAND gates are used to form

(A) 10 ohm if VA > VB
an AND gate
(B) 5 ohm if VA < VB
(A) 1 (B) 2
(C) 5 ohm if VA > VB
(C) 3 (D) 4
(D) 20 ohm if VA > VB

30. A logic gate is an electronic circuit which 34. The value of barrier potential of P-N
(A) Makes logic decisions junction or N-P junction in Ge is-
(A) 0.03 volt in the direction of forward
(B) Allows electrons flow only in one direction
current
(C) Works binary algebra (B) 0.3 volt in the direction opposite of the
(D) Alternates between 0 and 1 values forward current
(C) 25 volt in the direction opposite to the
forward current
31. A semi-conductor X is made by doping a (D) 25 volt in the direction of the forward
germanium crystal with arsenic (Z = 33). A current
second semi-conductor Y is made by
35. The drift current in a P-N junction is-
doping germanium with indium (Z = 49). (A) from the N-side to the P-side
The two are joined end to end and (B) from the P-side to the N-side
connected to a battery as shown. Which of (C) from the n-side to the P-side if the
junction is forward-biased and in the
the following statements is correct-
oposite direction if it is reverse biased.
(D) from the P-side to the N-side if the
X Y
junction is forward-baised and in the
opposite direction if it is reverse baised.

(SECTION-B)
+ – 36. The maximum efficiency of full wave
(A) X is p-type, Y is n-type and the junction rectifier is
is forward biased. (A) 100 % (B) 25.20 %
(B) X is n-type, Y is p-type and the junction (C) 40.2 % (D) 81.2 %
is forward biased.
37. In P-N junction at the near junction there
(C) X is p-type, Y is n-type and the are-
junction is reverse biased. (A) only positive ions
(B) only negative ions
(D) X is n-type, Y is p-type and the
(C) positive and negative ion both
junction is reverse biased. (D) elerctron and holes both

PG #3
38. The cause of the potential barrier in a p-n 42. In the following circuit readings in
diode is : ammeters A1 and A2 will be-
(A) depletion of positive charges near the
junction A1
(B) concentration of positive charges near 10
the junction
2V
(C) depletion of negative charges near the
junction
(D) concentration of positive and negative 10
A2
charges near the junction

39. A semi-conducting device is connected in

a series in circuit with a battery and a (A) 0.2 A, zero (B) Zero , 0.2 A
resistance. A current is allowed to pass (C) 0.2 A, 0.2 A (D) 0.2 A, 0.4 A
through the circuit. If the polarity of the
battery is reversed, the current drops to 43. A light emitting diode has a voltage drop of
almost zero. The device may be :
(A) a p-n junction 2 v across it and passes a current of 10 A.
(B) an intrinsic semiconductor when it operates with a 6 v battery through
(C) a p-type semiconductor a limiting resistor R, the value of R is
(D) an n-type semiconductor
(A) 40 k (B) 4 k
40. In the middle of the depletion layer of (C) 200 k (D) 400 k
reverse biased p - n juction,the
(A) electric field is zero 44. In the following circuit, the output Y for all
(B) potential is maximum possible inputs A and B is expressed by
(C) electric field is maximum the truth table:
(D) Potential is zero

41. If in p-n junction diode, a square input

signal of 10 V is applied as shown. Then
A B Y A B Y
the output signal across R will be
0 0 0 0 0 1
(A) 0 1 0 (B) 0 1 1
1 0 0 1 0 1
1 1 1 1 1 0
A B Y A B Y
0 0 1 0 0 0
(C) 0 1 0 (D) 0 1 1
(A) 1 0 0 1 0 1
1 1 0 1 1 1

45. A sinusoidal voltage of peak to peak value

(B) of 310 V is connected in series with a
diode and a load resistance R so that Half-
wave rectification occurs. If the diode has
(C) a negligble forwed resistance, the root
mean square voltage across the load
resistance is
(D)
(A) 310 V (B) 155 V
(C) 109.5 V (D) 77.5

PG #4
46. Assertion : The Boolean expression Y = 49. A zener diode, having breakdown voltage
A  A is for NAND gate. equal to 15V, is used in a voltage regulator
Reason : The Boolean expression Y = circuit shown in figure. The current through
A  A is for NOT gate. the diode is :
(A) If both assertion and reason are true
and reason is the correct explanation of
assertion.
(B) If both assertion and reason are true
but reason is not the correct explanation of
assertion.
(A) 10 mA (B) 15 mA
(C) If Assertion is true but reason is false.
(C) 20 mA (D) 5 mA
(D) If both assertion and reason are false.

50. The given graph represents V – 

47. The device that act as a complete
electronic circuit is characteristic for a semiconductor device.
(A) junction diode
(B) integrated circuit
A
(C) junction transistor
(D) zener diode

48. Pure Si at 500K has equal number of Which of the following statement is correct ?
electron (ne) and hole (nh) concentrations (A) It is V – characteristic for solar cell
where, point A represents open circuit
of 1.5 × 1016 m–3. Doping by indium
voltage and point B short circuit current.
increases nh to 4.5 × 1022 m–3. The
(B) It is for a solar cell and points A and B
doped semiconductor is of : represent open circuit voltage and current,
(A) n–type with electron concentration ne respectively.
= 5 × 1022 m–3 (C) It is for a photodiode and points A and
(B) p–type with electron concentration ne
B represent open circuit voltage and
= 2.5 ×1010 m–3 current respectively.
(C) n–type with electron concentration ne
(D) It is for a LED and points A and B
= 2.5 × 1023 m–3
represent open circuit voltage and short
(D) p–type having electron concentrations
circuit current, respectively.
ne = 5 × 109 m–3

PG #5