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ADS_Tutorial

The lab focuses on introducing microwave circuit design using ADS, specifically through creating and simulating lumped element matching networks, optimizing circuit parameters, and designing distributed and microstrip matching networks. Students will learn to use various components, run simulations, and analyze results, including reflection coefficients and bandwidths. The final submission includes schematics, plots, and answers to comparative questions regarding the performance of the different matching networks.

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firasalraie
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© © All Rights Reserved
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4 views

ADS_Tutorial

The lab focuses on introducing microwave circuit design using ADS, specifically through creating and simulating lumped element matching networks, optimizing circuit parameters, and designing distributed and microstrip matching networks. Students will learn to use various components, run simulations, and analyze results, including reflection coefficients and bandwidths. The final submission includes schematics, plots, and answers to comparative questions regarding the performance of the different matching networks.

Uploaded by

firasalraie
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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EE160 LAB1: Introduction to ADS.

Matching
networks.

Spring 2010

Summary
The goal of the lab is to learn basic concepts and procedures of microwave
circuit design with ADS: learn how to place elements on the schematic win-
dow, run simulation, display simulation results, tune element parameters and
optimize parameter values. The documentation for ADS can be found here:
http://cp.literature.agilent.com/litweb/pdf/ads2008/ads2008.html

1 Lumped element matching network.


Use tutorial and documentation to complete the tasks described below.

1.1 Schematic and simulation, tuning.


• Create a new project. Follow this link the ADS website for the di-
recitons. Create schematic (circuit) for the new design.

• From Eqn Based-Linear palette select single port Z matrix element and
place it in the schematic. This is the load to be matched to the 50Ω
characteristic impedance of the system. Edit Component parameters
of the one port Z element to set its impedance to 100 + j40Ω.

• From Simulation-S Param palette select and place on the schematic


TERM1 element. Place Grounds, port, and connect elements with
wires.

1
• From Simulation-S Param palette select S-parameter simulation icon
and place it in the schematic window. Set Start frequency to 4.5GHz,
Stop frequency at 5.5 and Step to 0.1GHz. S-parameter simulation
manuals are available here. Your schematic window now should look
similar to Figure 1. Make sure you save your design under meaningfull
name.

• Run simulation by pressing the gear button in the toolbar. After simu-
lation is completed Display window should appear. Place Smith Chart
diagram on the board. Select S11 as a parameter to display in the chart.
The reflection coefficient of the load impedance Z1P1 should appear as
a red dot in the Smith Chart.

• Place shunt inductor from Lumped Components palette and set its value
to 5nH. Run simulation and observe the change of the reflection coef-
ficient (S11 parameter) in the display window.

• Press the Tuner button and select inductance as a parameter to tune.

• With a slider set the value of the inductor to what you think is required
to achieve matching condition.

• Place series capacitor and set its value to 0.5 pF. Repeat tuner proce-
dure to achieve approximate matching at 5GHz. You can tune more
then one circuit element at once.

• Place rectangular plot in the Display window. Select S11 to be plotted.


Determine the bandwidth of the resulting matching circuit for Γmax =
0.04

• Save your design.

1.2 Optimization of circuit element parameters.


Enable the inductance and capacitance to be parameters of the optimiza-
tion. Place Goal icon from Optim/Stat/Yield/DOE palette in the schematic
window. Set Expr = mag(S11), SimInstanceName to SP1 and Max=0.04.
Place Optimization icon in the schematic window. Change optimization type
to Gradient. Your schematic window should look similar to Figure 2.

2
Figure 1: Lumped element matching network.

Figure 2: Schematic window prepared for optimization.

3
Figure 3: Display window for lumped component matching network.

Run simulation. After completion, design display window to show Smith


Chart with reflection coefficient (S11 parameter) , and separately the magni-
tude of reflection coefficient in dB and its phase. Example of Display window
is shown in Figure 3.

2 Distributed matching network with ideal


transmission lines.
Design matching network for the same impedance element using ideal trans-
mission line elements. Perform one analysis similar to the lumped element
matching network. Use the length of the elements as optimization variables.
Determine the bandwidth of the matching network for Γmax = 0.04. How
does it compare to the bandwidth of lumped element matching network?

3 Microstrip matching networks.


• Design 50Ω microstrip line using default parameters (ǫ = 9.6, tan δ =
0.0001,H = 10 mil) of the substrate using Line Calc tool. Use the
resulting width of the microstrip transmission line for the microstrip

4
Figure 4: Ideal transmission line matching circuit.

elements in the schematic window.

• Design two element matching network using microstrip components.


Perform analysis similar to the lumped component matching network.

• Change the impedance of load element to 100Ω. Design the matching


quarter wave transformer at 5GHz.

• Simulate and plot 2-port S-parameters of quarter wave transformer.

What to hand in.


Print final schematics, plots for reflection coefficient S11 . Answer the fol-
lowing questions: Compare the bandwidth of the three circuits. Can the
ideal matching be achieved in the entire frequency range? Why? Why opti-
mization resulted in the reflection coefficient minimum off the center of the
range?

5
Figure 5: Microstrip matching network.

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