VUO 36

Three Phase Rectifier Bridge IdAV = 35 A

VRRM = 800-1800 V

VRSM VRRM Type + -

~
VDSM VDRM ~
V V ~
800 900 VUO 36-08NO8 ~
~
1200 1300 VUO 36-12NO8
1400 1500 VUO 36-14NO8 ~ +
1600 1700 VUO 36-16NO8 -
1800 1900 VUO 36-18NO8

Symbol Conditions Maximum Ratings Features

IdAV TC = 85°C, module 27 A • Package with ¼" fast-on terminals

IdAVM TC = 62°C, module 35 A • Isolation voltage 3000 V~
• Planar passivated chips
IFSM TVJ = 45°C; t = 10 ms (50 Hz) 550 A • Blocking voltage up to 1800 V
VR = 0 t = 8.3 ms (60 Hz) 600 A • Low forward voltage drop
TVJ = TVJM; t = 10 ms (50 Hz) 500 A • UL registered E 72873
VR = 0 t = 8.3 ms (60 Hz) 550 A
Applications
I2t TVJ = 45°C; t = 10 ms (50 Hz) 1520 A2s
VR = 0 t = 8.3 ms (60 Hz) 1520 A2s • Supplies for DC power equipment
TVJ = TVJM; t = 10 ms (50 Hz) 1250 As2 • Input rectifiers for PWM inverter
VR = 0 t = 8.3 ms (60 Hz) 1250 A2s • Battery DC power supplies
• Field supply for DC motors
TVJ -40...+150 °C
TVJM 150 °C Advantages
Tstg -40...+150 °C
• Easy to mount with one screw
VISOL 50/60 Hz, RMS t = 1 min 2500 V~ • Space and weight savings
IISOL < 1 mA t=1s 3000 V~ • Improved temperature & power cycling
Md Mounting torque (M5) 2 ±10% Nm
(10-32 UNF) 18 ±10% lb.in. Dimensions in mm (1 mm = 0.0394“)

Weight Typ. 22 g 6.3 x 0.8

Symbol Conditions Characteristic Values

22.1 ±0.5

IR VR = VRRM TVJ = 25°C 0.3 mA

TVJ = TVJM 2.0 mA
10 ±0.2

VF IF = 150 A TVJ = 25°C 1.7 V

VT0 For power-loss calculations only 0.8 V
rt 7.4 m7
RthJC per diode; 120° el. 7.50 K/W 12 ±0.3
per module 1.25 K/W
RthCH per diode; 120° el. 8.40 K/W D
per module 1.40 K/W C E
8 ±0.3

dS Creeping distance on surface 12.7 mm

28.5 ±0.2

dA Creepage distance in air 9.4 mm

a Max. allowable acceleration 50 m/s2
12 ±0.3

Data according to IEC 60747 and refer to a single diode unless otherwise stated. B
A

28.5 ±0.2
IXYS reserves the right to change limits, test conditions and dimensions. 20070807

© IXYS All rights reserved 1-2

 VUO 36

Fig. 1 Forward current versus Fig. 2 Surge overload current per diode Fig. 3 I2t versus time (1-10 ms)
voltage drop per diode IFSM: Crest value. t: duration per diode

Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at
case temperature

Constants for ZthJC calculation:

i Rthi (K/W) ti (s)
1 0.194 0.024
2 0.556 0.07
3 2.25 5.8
4 6.3 8.5

Constants for ZthJK calculation:

i Rthi (K/W) ti (s)
1 0.194 0.024
2 0.556 0.07
3 2.25 5.8
4 6.3 8.5
5 0.9 28

Fig. 6 Transient thermal impedance per diode

IXYS reserves the right to change limits, test conditions and dimensions. 20070807

© IXYS All rights reserved 2-2