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vlsith1

The document discusses the characteristics and behavior of MOSFETs, focusing on parameters such as gate capacitance, thermal stability, and the effects of doping on performance. It highlights the differences between NMOS and PMOS transistors, particularly in terms of their driving capabilities and voltage handling. Additionally, it touches on manufacturing challenges and the implications of material choices in modern electronic applications.
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© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
3 views

vlsith1

The document discusses the characteristics and behavior of MOSFETs, focusing on parameters such as gate capacitance, thermal stability, and the effects of doping on performance. It highlights the differences between NMOS and PMOS transistors, particularly in terms of their driving capabilities and voltage handling. Additionally, it touches on manufacturing challenges and the implications of material choices in modern electronic applications.
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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VLSI DA-1 Rialita Nigan 228tto2 8

qate dowUe apaci taanee Cgs of a Mos fEt vavius witl th

clamnel for malirn


Cqs is prinariy detrimsd bby
ford Ia t s gion, gs and tL
is not capacitaet beluseen tL th
the ovelap the capal
cspacilace fs sulodiiek cosla but swae
dupletion ugion. Jhis begína to form,ans
, th chamnel
inceases 4excedo Vn gaKunaton gion. dptndg
)As Us linan.
Mos ft Teuts t
tu lat of copaeitn,
the
-8wce
lag
Vo

the honn el acts as


1h this
the o u
Comes
ow
with the dieltni
thickaess
becous

slallizs at t
point whir
to ntaum &i
Low at-jn ao Copared to
Qenmaniwn dwpit ib duuice de to deveel
2 "n ucwrnt MosFET
preernd in
ig not
Key heaAOnA. eead
has lowr thermat slabily
o tabi l'G,4enmamiun kugt Cuhats at eltvad tef
to hig len lea
applicai
t as jlialle f morden elelronie
make
:Js native oide ot ge wmanius (Geo,) isis
native ot poo
Dosd qualt as pen sio hich ds excell
es entel for MoS FET op erdn while Geor is less eff ect ve
insulatina leyen
in ilicon teeh,wlit s costc{fective Gmot ceer
opti: - slal produchou Swi uling
quire in manufpatiring prossea
’Altenualw alnial

7t 44 hige
- bveoolouon vollag
stC ofeos big tlm onduetiviG andl hig breoKdoon
vollgr 1eas fo higt pooe duices
20 malenid. prowising fen wltera -seatee en.
enegy- fii et trasist
’Chattemggn i: Jhesu matnia fore maafacloin ticultis inlyreta
clallngo with er istag si teelto logy
o94 anot higl e ot
thin suad
wicle cdaplo desf+u tleis tlpento petia
(im itang
pass a O.
NMOS Tranoistn Can
thi's i betanes
brony loqie o but o weak logie I class
Riason Can pess s o , i t (am p l thu tpt c to qut
ohen n mNmo
eLLectivey, but it not p l th olp alU the wsay to Aegly
(omthuelatt
eHectiueyVeo olue to tlheaholJ
vo tlage
pass a
Pmos transistr (an
ogCweak lonic
ogic logi: becau t fmos
kease paas Aog
it eiely pulelsto tle blo clas
t wy droy
but Can not pull t a NMDS taa isla ouidn
istn wea K
when passiny a
dig capabiliy 4 tu
owpt voltage may
peiglogieo th Pmos provid dnive capabilily
wea K dnive
"When not r e l tle

and can be de to the oaliralons uo llag


to fu

to bulk volay (Vse) in neases ths thusbold volng becaus


the body etect cauts a ‘ ta tl da pletn agiou ogLiving
tu iinvert tu hannel
to Souo vollgi to
-cLrunel enhom Ce mest MOSFE pinch off ocuns
an

the oain to sUne ol lag (vos) usels tLs poit


yhen
wthe tu haunel
Vas - Vn
3iven
(pinch-oH)
= 3-0-S 2-s U
Up
Vps Mos FET iS b e Caus e
wad as th gte onid layn
s sio, is inslatuypreperty sltbiu
o ia enellent
1on fmple maeulalign wlich is ued in
afed by
cQ6 tc) v Can be Cuukoll uoltage (hangee in
t doping proas to atust
ole to ion, iplan tation inpact the
oloping luel
thi ubstralt

Mosfet in satwra
Cos id the Ve)

Ios
VouI
R

Yout 2x1o-1 (Vin-o.s):


-o5)
2- Vowt = (Vin
As
Kn ow Uin =Vqs
2-Vos = (Vgs - o5)L
Jresistr soilek tom Annaion to lineon Vos <Ves V

2- Vs -D-s)? Vs-6 <


let vas -5 y o 2- x? c ,

(x42) <o d(a-1)<o.


u MoSEET to
ssi telL o
cloes not et
Considiy oveh al! x i e
X-) >0 4
-2

Vas|-5
je
Vin ) -S

) Uin|-S V at
this
his
volbg tuansi tuo oc wrs

Cox
2

x/o0kIe- (1-s-os) ?
Ins
Vos Vop-lo
Vot 3
XIDO KID- 2 U

of satwatusin
On set

doalwaloy
Vos
Jas
M1 to duoitet
rositom poiut fon traais ton
V (-SU is the
Hence egio
to tuicle
to tniocle to n inean
fom datnalig
en hane meut moole Depleton Mode

Ooefatt slat is normall, oFf o Default a is noall, ow sl

the cain d dowrce nleas a


is applied to
DwhenVs >o is pplied it Dolen Vs<o is ayplid it
dylelen
e towanda the qate, forminy a
blo the d n elecsous
Condutin chemnel tuemoisto oN.
Qund dplaon mod wmos Ve
wode
()d sinan Vas
minin KLquived to twra (u) for a dplbon
conduetamie)
is twuskotd vol tag .Jhefou for edues tle cwwet ad at Vgs
NMOS Ves)Va t ount slos
thu t a sisto to cod conet plAra)

S (doune )
(sowrce )
cir ita
aita! Avof telhin ain
(tue)9 Vgs. )Sounte
Sowrce oraia

Psukslnau p-susstree

slows Je grafl
ig that Io slanla ooing
that t curet s anG low
th Va
when Vgs exceeds becau
Suilal "Jot
Cost cot low
manee pnfon low
Denig" romplerily
mou
corcustan
calls slandtr Called
wmas
lom lus be Duiqu Coslon fet
eouduetn traus reeleeed a to
twith
dhain octwre,
tu 4alerali loci vt he
slps Fes mos II
iain dain tu
beyool velocty Salirdu tw (alled
thy ieh wli
Aees Cari e
limt toT,Linly velouty Caries
cecthiciel
Joy veloig
becoais
drain
elucinic higl toelw velot, ateu datun
n Jis idols
(hannel the vploy
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