2-1

IC
IC

CD-R CD-R
(spin coating) LCD

(PDP LED ) (HDD MO )

3C

Sputtering

3C

2-1-1
balanced magnetron
sputtering unbalance magnetron sputtering
(DC magnetron sputtering)
(RF magnetron sputtering)

6
(arc)

[11]

S N
2-1(a)

B.Window 2-1(b)
(N) (S)

[12]

[13]
2-2

7
 [12]
2-1 (a) (b)

[13]
2-2

8
2-1-2
2-3 (target) (substrate)
(chamber)

( )
[14]

2-3

2-1-3

N2 O2
C2H2

9
 [15]
(target poisoning) 2-4
[16]

2-4 ( ) [16]

10
2-1-4
2-5
[17-18]

(1) (secondary electrons) (target atoms)

(2) (implant)
(3) (neutrals) (reflect)
(4)
(5)

[19]

11
( ) (Ar+)
(re-sputtering)

( )

(1)
(ion density) (2)
(ion energy) 2-1
[20]

2-1

12
2-2

(plasma)

1960

(1) (arc refinement) (plasma

spraying)
(2) (sputtering) (plasma Assisted
physical vapour deposition) (plasma assisted

chemical vapour deposition)

(3) (plasma nitriding) (ion implantation)
(4) MHD (magnetohydrodynamic energy

conversion) (nuclear fusion power generation)

(spacecraft ion propulsion)
(5) (inductively coupled plasma
optical emission spectrometer) (glow discharge
optical emission spectrometer)
(6) (neon light) (laser light)

13
2-2-1

[14]

[21]

2-2-2

[22]

( ) (complete thermal equilibrium plasma)

106~108K

( ) (local thermal equilibrium plasma)

3x103~3x104K (thermal

14
plasma)

( ) (non-local thermal equilibrium plasma)

(cold plasma)

2-2-3
[23]
2-6

15
 10
105
Te
1
10 4

Temperature (K)
Te and Tg (eV)

0.1 Thermal
Tg Plasma 103

0.01 Non-isothermal Plasma 10 2

10-3 10-2 10-1 1 10 10 2 103

Gas pressure (Torr)

[23]

2-2-4
2-7 I-V
[24-25]

( ) (townsend discharge)

(dark discharge)

( 400~450V)

( ) (normal glow discharge)

16
( ) (abnormal glow discharge)

( ) (arc discharge)

(10~100V)
0.1~1000 A

[23]
2-7 ( - )

17
 I-V 2-8
[26-27]

(1) (cathode dark space)

(2) (negative glow)

(3) (faraday dark space)

(4) (positive column)
(5) (anode dark space)

2-8

18
2-2-5

(1)

(direct
current plasma) (radio frequency plasma 13.56
MHz) (microwave plasma 2.45GHz) (2)

[28]

(A-1) (A-2) (A-3)

(A-1) (dissociation reaction)

G2 G (A-2)
(excited state) G
(glow discharge) (A-4)
(relaxation reaction)
h (planck constant) 6.626 10-34
(A-3)
(ionization reaction)

19
 (gas breakdown)

2-2-6
2-2-5 (A-2) (A-4)

[19]
2-9

20
 [19]
2-9

2-2-7

(polishing)

21
2-3 TiN

2-3-1 TiN
(DLC)

[29-31]
2-2[32]

[33-34]

( VLSI)
[35]

[36-37]

[38]
Hägg
R
(R=Rx / Rme Rme Rx ) R
0.59 FCC HCP
R 0.59 RN / RTi
0.504 TiN Ti N
[39]
NaCl FCC

22
 [38]
2-2

( ) 2950
(VHN) 1900~2400
(GPa) 640
(25 )( cm) 20~200
(25 )(10-6/ ) 9.35
(25 )(W/cm- ) 0.13
(g/cm3) 5.43

2-3-2

(Absorbed)

(a) (nucleation) (b) (grain growth) (c)

(coalescence) (d) (filling of channels) (e) (film

growth)

(kinetically favored)

(thermodynamically favored)
( ) (sticking
coefficient)

23
 ( )

2-3-3
2-10 Thornton
[40]
Zone
1

Zone T Zone T

Zone 2

(grain size) Zone 3

Messier[41] 2-11
Zone 1 Zone T

Messier

24
 [40]
2-10

[41]
2-11

25
2-4

3C

(die casting) (thixomolding®)

2-4-1
ASTM(american society for testing and materials)

AZ31D H24 A Z

Al Zn 31 3wt% 1wt% D
H24
(1)Mg-A1 (2)Mg-Mn

(3)Mg-A1-Zn (4)Mg-A1-Z (5)Mg-A1-Si (6)Mg-A1-Zr-Re

(7)Mg-Zr-Re-Ag (8)Mg-Zn-Zr-Th (9) Mg-Zr-RE-Th

26
2-4-2
(H.C.P.) 650 1107
0.25 cal /g 89 cal /g

2/3 1/5

2-3

( )

-2.36V

2-3

E(Volt) E(Volt)
-3.04 -0.23
-2.36 -0.14
-1.66 0.00
-1.03 0.34
-0.76 0.80
-0.44 1.42
-0.42

27
2-4-3

(1)

(2)

[7]

2-12

( ) (chemical conversion coating)

[7]

1997 7 2003

28
( ) (anodizing)[42]

(1)

(2)

60 m

( ) (electroplate)

29
 (chemical plating)

2-12

( ) (diffusion coating)
[43]
1990 Mino

[44]
2000 Shigematsu
450°C AZ91
HV80 HV160

30
( ) (physical vapor deposition, PVD)
PVD CVD

PVD (evaporation)
(sputtering deposition) (ion plating)

[8]
1995 Reiners & Griepentrog PVD CVD
2003 Frank

Hollstein[9] CrN TiN (TiAl)N

NbN-(TiAl)N CrN-Ti(CN) TiN/AlN NbN/CrN
AZ31hp
PLS HTC 2-4

1 2
Nb 2-13
2-14 5 m TiN
- 200V
80V

31
 [9]
2-4

[9]
2-13

32
 [9]
2-14 TiN -

( )

Yamamoto[45]
AZ31
1% AZ31

( ) (chemical vapor deposition, CVD)

(boundary layer)

33
34
2-5

(design of experiments) 1923

(analysis of
variance, ANOVA)

[46]

1940
(NTT) SN

( DOE
)

(Taiguchi method, TM)

(Taiguchi’s quality engineering)

35
2-5-1

(parameter design)
(orthogonal array)

(signal to noise ratio, S/N) S/N

S/N
S/N
(confirmation
run) S/N S/N

[47]

( ) ( )

( ) ( )

( )

2-5-2
( )

36
 2-3

2-5

2n 3n

L4 L8 L16 L9 L27 L12 L18

1x2
3x2 7x2 15x2 4x3 13x3 11x2
× 7x3

4 8 16 9 27 12 18

23 27 215 34 313 211 2x37

(8) (128) (32768) (81) (1594320) (2048) (4374)

2-5-3
S/N

S/N

= 10 × log 10 ( / ) (dB)

S N S/N

S/N = Ps/Pn Ps

Pn

37
(performance measure)

SN
SN SN

2-5-4
[48]
(static) (dynamic)
( )
(a) (smaller-the-better)

SN ( ) 10log 2 2
1/n Σ(yi) 2 -----------(2-1)

(b) (larger-the-better)

SN ( ) 10log 2 2
1/n Σ(1/yi) 2 ---------(2-2)

(c) (nominal-the-better)

2 2
SN ( ) 10log ( / )
2
1/n Σ(yi) 2 2
1/(n-1) Σ(yi )2 ------------(2-3)

38
 2-1 2-2 2-3 yi n
SN

( )

( )

( ) ( ) S/N

(1)

(2)

(3) (Y )

2-5-5
SN
S/N

39
(ANOVA)

30%
30%

40