TPS54541 (6)
TPS54541 (6)
TPS54541
SLVSC57B – OCTOBER 2013 – REVISED FEBRUARY 2016
EN BOOT 90
RT/CLK VOUT
Efficiency (%)
85
SS/TR SW
12 V to 3.3 V
80
12 V to 5 V
COMP 75
FB
70
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS54541
SLVSC57B – OCTOBER 2013 – REVISED FEBRUARY 2016 www.ti.com
Table of Contents
1 Features .................................................................. 1 7.4 Device Functional Modes........................................ 27
2 Applications ........................................................... 1 8 Application and Implementation ........................ 28
3 Description ............................................................. 1 8.1 Application Information............................................ 28
4 Revision History..................................................... 2 8.2 Typical Applications ............................................... 28
5 Pin Configuration and Functions ......................... 3 9 Power Supply Recommendations...................... 42
6 Specifications......................................................... 4 10 Layout................................................................... 43
6.1 Absolute Maximum Ratings ...................................... 4 10.1 Layout Guidelines ................................................. 43
6.2 ESD Ratings.............................................................. 4 10.2 Layout Example .................................................... 43
6.3 Recommended Operating Conditions....................... 4 10.3 Estimated Circuit Area .......................................... 43
6.4 Thermal Information .................................................. 4 11 Device and Documentation Support ................. 44
6.5 Electrical Characteristics........................................... 5 11.1 Device Support...................................................... 44
6.6 Timing Requirements ................................................ 6 11.2 Documentation Support ........................................ 44
6.7 Switching Requirements ........................................... 6 11.3 Community Resources.......................................... 44
6.8 Typical Characteristics .............................................. 7 11.4 Trademarks ........................................................... 44
7 Detailed Description ............................................ 12 11.5 Electrostatic Discharge Caution ............................ 44
7.1 Overview ................................................................. 12 11.6 Glossary ................................................................ 44
7.2 Functional Block Diagram ....................................... 13 12 Mechanical, Packaging, and Orderable
7.3 Feature Description................................................. 13 Information ........................................................... 44
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
DPR Package
10-Pin WSON With Exposed Thermal Pad
Top View
BOOT 1 10 PWRGD
VIN 2 9 SW
EN 3 8 GND
SS/TR 4 7 COMP
RT/CLK 5 6 FB
Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
A bootstrap capacitor is required between BOOT and SW. If the voltage on this capacitor is below the
BOOT 1 O minimum required to operate the high-side MOSFET, the gate drive is switched off until the capacitor is
refreshed.
Error amplifier output and input to the output switch current (PWM) comparator. Connect frequency
COMP 7 O
compensation components to this pin.
Enable pin, with an internal pullup current source. Pull below 1.2 V to disable. Float to enable. Adjust the
EN 3 I
input undervoltage lockout with two resistors. See the Enable and Adjusting Undervoltage Lockout section.
FB 6 I Inverting input of the transconductance (gm) error amplifier.
GND 8 – Ground
Power Good is an open drain output that asserts low if the output voltage is out of regulation due to thermal
PWRGD 10 O
shutdown, dropout, over-voltage or EN shut down.
Resistor Timing and External Clock. An internal amplifier holds this pin at a fixed voltage when using an
external resistor to ground to set the switching frequency. If the pin is pulled above the PLL upper threshold,
RT/CLK 5 I a mode change occurs and the pin becomes a synchronization input. The internal amplifier is disabled and
the pin is a high impedance clock input to the internal PLL. If clocking edges stop, the internal amplifier is re-
enabled and the operating mode returns to resistor frequency programming.
Soft-start and Tracking. An external capacitor connected to this pin sets the output rise time. Because the
SS/TR 4 I
voltage on this pin overrides the internal reference, SS/TR can be used for tracking and sequencing.
SW 9 O The source of the internal high-side power MOSFET and switching node of the converter.
VIN 2 I Input supply voltage with 4.5-V to 42-V operating range.
The GND pin must be electrically connected to the exposed pad on the printed circuit board for proper
Thermal Pad 11 –
operation.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VIN –0.3 45
EN –0.3 8.4
BOOT–SW –0.3 8
FB –0.3 3
COMP –0.3 3
Voltage PWRGD –0.3 6 V
SS/TR –0.3 3
RT/CLK –0.3 3.6
SW –0.6 45
SW, 5-ns Transient –7 65
SW, 10-ns Transient –2 45
Operating junction temperature –40 150 °C
Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2) Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. See Power Dissipation Estimate for more information.
(1) Open Loop current limit measured directly at the SW pin and is independent of the inductor value and slope compensation.
Copyright © 2013–2016, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: TPS54541
TPS54541
SLVSC57B – OCTOBER 2013 – REVISED FEBRUARY 2016 www.ti.com
0.25 0.814
RDSON - Static Drain-Source
0.809
0.804
0.15
0.799
0.1
0.794
8 8
7.5 7.5
7 7
±40ƒC
6.5 6.5
25°C
V IN ==12
VIN 12VV
150°C
6 6
±50 ±25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45
TJ ± Junction Temperature (ƒC) C003 VI - Input Voltage (V) C004
Figure 3. Switch Current Limit vs Junction Temperature Figure 4. Switch Current Limit vs Input Voltage
550 500
540
FSW - Switching Frequency (kHz)
450
fSW - Switching Frequency (kHz)
530
400
520
510 350
500 300
490
250
480
200
470
460 150
RT
R T ==200
200kk, ,VIN
VIN == 12
12 V
V
450 100
±50 ±25 0 25 50 75 100 125 150 200 300 400 500 600 700 800 900 1000
TJ Junction - Temperature (ƒC) C005 RT/CLK - Resistance (k ) C006
Figure 5. Switching Frequency vs Junction Temperature Figure 6. Switching Frequency vs RT/CLK Resistance Low
Frequency Range
450
2000
400
gm - uA/V
1500
350
1000
300
500
250
VIN
VIN ==12
12VV
0 200
0 50 100 150 200 ±50 ±25 0 25 50 75 100 125 150
RT/CLK - Resistance (k ) C007 TJ ± Junction Temperature (ƒC) C008
Figure 7. Switching Frequency vs RT/CLK Resistance High Figure 8. EA Transconductance vs Junction Temperature
Frequency Range
120 1.3
110
100 1.27
90 EN - Threshold (V)
gm - uA/V
80 1.24
70
60 1.21
50
40 1.18
30 VIN
VIN ==12
12VV VIN
VIN ==12
12VV
20 1.15
±50 ±25 0 25 50 75 100 125 150 ±50 ±25 0 25 50 75 100 125 150
TJ ± Junction Temperature (ƒC) C009 TJ ± Junction Temperature (ƒC) C010
Figure 9. EA Transconductance During Soft-Start vs Figure 10. EN Pin Voltage vs Junction Temperature
Junction Temperature
±3.5 ±0.5
±3.7 ±0.7
±3.9 ±0.9
±4.1 ±1.1
Current IEN (uA)
±4.3 ±1.3
±4.5 ±1.5
±4.7 ±1.7
±4.9 ±1.9
±5.1 ±2.1
±5.3 VIN ±2.3
V IN ==12
12V,
V,IEN
IEN = Threshold
= Threshold + 50
+ 50 mVmV VIN
VIN ==12
12V,
V,IEN
IEN== Threshold
Threshold + 50
- 50 mVmV
±5.5 ±2.5
±50 ±25 0 25 50 75 100 125 150 ±50 ±25 0 25 50 75 100 125 150
TJ ± Junction Temperature (ƒC) C011 TJ ± Junction Temperature (ƒC) C012
Figure 11. EN Pin Current vs Junction Temperature Figure 12. EN Pin Current vs Junction Temperature
±3.1
±3.3
±3.5 50.0
±3.7
±3.9
25.0
±4.1
V SENSE Falling
Vsense Falling
±4.3 VVIN
IN ==12
12VV
Vsense
V Falling
SENSE Rising
±4.5 0.0
±50 ±25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
TJ ± Junction Temperature (ƒC) C013 VSENSE (V) C014
Figure 13. EN Pin Current Hysteresis vs Junction Figure 14. Switching Frequency vs FB
Temperature
3 3
2.5 2.5
2 2
1.5 1.5
1 1
0.5 0.5
VIN
V IN ==12
12VV TVIN = 12
J = 25 °C V
0 0
±50 ±25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45
TJ ± Junction Temperature (ƒC) C015 VIN - Input Voltage (V) C016
Figure 15. Shutdown Supply Current vs Junction Figure 16. Shutdown Supply Current vs Input Voltage (VIN)
Temperature
210 210
190 190
Supply Current IVIN (uA)
Supply Current IVIN (uA)
170 170
150 150
130 130
110 110
90 90
VIN
V IN ==12
12VV TVIN
J = 25 °CV
= 12
70 70
±50 ±25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45
TJ ± Junction Temperature (ƒC) C017 VIN - Input Voltage (ƒC) C018
Figure 17. VIN Supply Current vs Junction Temperature Figure 18. VIN Supply Current vs Input Voltage
2.5 4.4
2.4 4.3
VI(BOOT-PH) (V)
2.3 4.2
VIN (V)
2.2 4.1
2.1 4
2 3.9
BOOT-PH UVLO Falling UVLO Start Switching
1.9 3.8
BOOT-PH UVLO Rising UVLO Stop Switching
1.8 3.7
±50 ±25 0 25 50 75 100 125 150 ±50 ±25 0 25 50 75 100 125 150
TJ ± Junction Temperature (ƒC) C019 TJ ± Junction Temperature (ƒC) C020
Figure 19. BOOT-SW UVLO vs Junction Temperature Figure 20. Input Voltage UVLO vs Junction Temperature
80 110
FB
108
70
Power Good Resistance ( )
106
Figure 21. PWRGD ON Resistance vs Junction Temperature Figure 22. PWRGD Threshold vs Junction Temperature
900 60
VVIN
IN = =
1212V,V,2525°C°C
800 55
SS/TR to FB Offset (mV)
700
50
600
45
Offset (mV)
500
40
400
35
300
30
200
100 25
VIN
V IN ==12
12V,
V,FB
FB==0.4
0.4VV
0 20
0 100 200 300 400 500 600 700 800 ±50 ±25 0 25 50 75 100 125 150
SS/TR (mV) C024 TJ ± Junction Temperature (ƒC) C025
VIN (V)
5.1 Dropout
Voltage
5.0
4.9 Dropout
4.8 Voltage
4.7
4.6
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
Output Current (A) C026
7 Detailed Description
7.1 Overview
The TPS54541 is a 42-V 5-A, step-down (buck) regulator with an integrated high-side n-channel MOSFET. The
device implements constant-frequency current-mode control which reduces output capacitance and simplifies
external frequency compensation. The wide switching frequency range of 100 to 2500 kHz allows for either
efficiency or size optimization when selecting the output filter components. The switching frequency is adjusted
using a resistor to ground connected to the RT/CLK pin. The device has an internal phase-locked loop (PLL)
connected to the RT/CLK pin that synchronizes the power switch turn-on to a falling edge of an external clock
signal.
The TPS54541 device has a default input start-up voltage of 4.3 V typical. The EN pin adjusts the input-voltage
undervoltage-lockout (UVLO) threshold with two external resistors. An internal-pullup current source enables
operation when the EN pin is floating. The operating current is 152 μA under a no-load condition when not
switching. When the device is disabled, the supply current is 2 μA.
The integrated 87-mΩ high-side MOSFET supports high-efficiency power-supply designs capable of delivering 5
A of continuous current to a load. The gate-drive bias voltage for the integrated high-side MOSFET is supplied by
a bootstrap capacitor connected from the BOOT to SW pins. The TPS54541 device reduces the external
component count by integrating the bootstrap recharge diode. The BOOT pin capacitor voltage is monitored by a
UVLO circuit which turns off the high-side MOSFET when the BOOT to SW voltage falls below a preset
threshold. An automatic BOOT capacitor recharge circuit allows the TPS54541 device to operate at high duty
cycles approaching 100%. Therefore, the maximum output voltage is near the minimum input supply voltage of
the application. The minimum output voltage is the internal 0.8-V feedback reference.
Output overvoltage transients are minimized by an overvoltage protection (OVP) comparator. When the OVP
comparator is activated, the high-side MOSFET turns off and remains off until the output voltage is less than
106% of the desired output voltage.
The SS/TR (soft-start/tracking) pin minimizes inrush currents or provides power-supply sequencing during power
up. A small value capacitor must be connected to the pin to adjust the soft-start time. A resistor divider can be
connected to the pin for critical power supply sequencing requirements. The SS/TR pin is discharged before the
output powers up. This discharging ensures a repeatable restart after an overtemperature fault, UVLO fault, or a
disabled condition. When the overload condition is removed, the soft-start circuit controls the recovery from the
fault output level to the nominal regulation voltage. A frequency-foldback circuit reduces the switching frequency
during startup and overcurrent fault conditions to help maintain control of the inductor current.
PWRGD EN VIN
Shutdown Thermal
Shutdown UVLO
Enable
UV Logic Comparator
Shutdown
Shutdown
Logic
OV
Enable
Threshold
Boot
Charge
Voltage
Minimum Boot
Reference Current
Clamp UVLO
Pulse Sense
Error Skip
Amplifier PWM BOOT
FB Comparator
SS/TR
Logic
Shutdown
Slope
6 Compensation SW
COMP
Frequency
Foldback
Overload
Recovery
Maximum
Clamp
Oscillator
with PLL
10/9/2013 A0272435
The start and stop voltage for a typical 5-V output application is shown in Figure 25 where the input voltage is
plotted versus load current. The start voltage is defined as the input voltage required to regulate the output within
1% of nominal. The stop voltage is defined as the input voltage at which the output drops by 5% or where
switching stops.
During high duty-cycle (low dropout) conditions, the inductor current ripple increases when the BOOT capacitor
recharges resulting in an increase in output voltage ripple. Increased ripple occurs when the off-time required to
recharge the BOOT capacitor is longer than the high-side off-time associated with cycle-by-cycle PWM control.
i1 ihys
RUVLO1 RUVLO1
10 kΩ
EN EN
Node
VEN
RUVLO2 RUVLO2 5.8 V
Figure 26. Adjustable Undervoltage Lockout Figure 27. Internal EN Pin Clamp
(UVLO)
PWRGD
EN EN
SS /TR SS /TR
PWRGD
Figure 29. Schematic for Sequential Startup Figure 30. Sequential Startup using EN and
Sequence PWRGD
TPS54160
TPS54541
3 EN
4 SS/TR
6 PWRGD
TPS54541
TPS54160
3 EN
4 SS/TR
6 PWRGD
Figure 31. Schematic for Ratiometric Startup Figure 32. Ratiometric Startup Using Coupled
Sequence SS/TR pins
Figure 31 shows a method for ratiometric start-up sequence by connecting the SS/TR pins together. The
regulator outputs ramp up and reach regulation at the same time. When calculating the soft-start time the pullup
current source must be doubled in Equation 5. Figure 32 shows the results of Figure 31.
TPS54541
EN VOUT 1
SS/TR
PWRGD
TPS54541
EN VOUT 2
R1
SS/ TR
R2
PWRGD
R3
R4
Ratiometric and simultaneous power-supply sequencing are implemented by connecting the resistor network of
R1 and R2 shown in Figure 33 to the output of the power supply that must be tracked or another voltage
reference source. Using Equation 6 and Equation 7, calculate the tracking resistors to initiate the VOUT2 slightly
before, after or at the same time as VOUT1. Equation 8 is the voltage difference between VOUT1 and VOUT2 at the
95% of nominal output regulation.
The ΔV variable is 0 V for simultaneous sequencing. To minimize the effect of the inherent SS/TR to FB offset
(VSSoffset) in the soft-start circuit and the offset created by the pullup-current source (ISS) and tracking resistors,
the VSSoffset and ISS are included as variables in the equations.
To design a ratio-metric start-up in which the VOUT2 voltage is slightly greater than the VOUT1 voltage when VOUT2
reaches regulation, use a negative number in Equation 6 through Equation 8 for ΔV. Equation 8 results in a
positive number for applications which the VOUT2 is slightly lower than VOUT1 when VOUT2 regulation is achieved.
Because the SS/TR pin must be pulled below 54 mV before starting after an EN, UVLO, or thermal shutdown
fault, careful selection of the tracking resistors ensures that the device restarts after a fault. The calculated R1
value from Equation 6 must be greater than the value calculated in Equation 9 to ensure the device recovers
from a fault.
As the SS/TR voltage becomes more than 85% of the nominal reference voltage, the VSSoffset becomes larger as
the soft-start circuits gradually hands-off the regulation reference to the internal voltage reference. The SS/TR pin
voltage must be greater than 1.5 V for a complete handoff to the internal voltage reference as shown in
Figure 23.
V + DV VSSoffset
R1 = OUT2 ´
VREF ISS (6)
VREF ´ R1
R2 =
VOUT2 + DV - VREF (7)
DV = VOUT1 - VOUT2 (8)
R1 > 2800 ´ VOUT1 - 180 ´ DV (9)
Figure 34. Ratiometric Startup with Tracking Resistors Figure 35. Ratiometric Startup with Tracking Resistors
TPS54541 TPS54541
RT/CLK
RT/CLK
PLL PLL
RT Hi-Z
Clock
Clock RT
Source
Source
Figure 38. Plot of Synchronizing in CCM Figure 39. Plot of Synchronizing in DCM
tON
SW
VO
Power Stage
gmps 17 A/V
a
R1 RESR
COMP RL
c
FB COUT
0.8 V
R3 CO RO
gmea
C2
350 mA/V R2
C1
VO
VC Adc
RESR
fp
RL
gmps
COUT
fz
Figure 43. Simple Small-Signal Model and Frequency Response for Peak Current-Mode Control
æ s ö
ç1 + ÷
VOUT 2p ´ ƒ Z
= Adc ´ è ø
VC æ s ö
ç1 + ÷
è 2 p ´ ƒP ø (14)
Adc = gmps ´ RL
(15)
1
ƒP =
COUT ´ RL ´ 2p (16)
1
ƒZ =
COUT ´ RESR ´ 2p (17)
VO
R1
FB
gmea Type 2A Type 2B Type 1
COMP
VREF
R3 C2 R3
R2 RO CO C2
C1 C1
Aol
A0 P1
Z1 P2
A1
BW
Figure 45. Frequency Response of the Type 2A and Type 2B Frequency Compensation
Aol (V / V )
RO =
gmea (18)
gmea
CO =
2p ´ BW (Hz) (19)
æ s ö
ç1 + ÷
è 2p ´ ƒ Z1 ø
EA = A0 ´
æ s ö æ s ö
ç1 + ÷ ´ ç1 + ÷
è 2p ´ ƒP1 ø è 2p ´ ƒP2 ø (20)
R2
A0 = gm ea ´ RO ´
R1 + R2 (21)
R2
A1 = gm ea ´ RO P R3 ´
R1 + R2 (22)
1
P1 =
2p ´ Ro ´ C1 (23)
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
R8
6V to 42V U1 TP10 TP9
1.00k
VIN 2 2 10
VIN PWRGD
TP1 C4
1
1 C11 3 1
GND
+ EN BOOT L1
3.3V @ 5A
R1
J2 DNP C10 C3 C1 C2 5 9 0.1µF 1
365k RT/CLK SW VOUT
4.7µF 4.7µF 4.7µF 4.7µF TP5 744325550 TP6 TP7
SS/TR 4 6 5.5µH 2 GND
SS/TR FB FB
2
3
R3 R7
1
TP2 243k 7 8 49.9 J1
COMP GND D1 TP8
PAD + C12
GND PDS760-13
C13 R4 TPS54541DPR C6 C7 DNPC9 DNP
16.9k 100µF 100µF 47µF GND
0.01µF C8 TP4
2 GND
2
GND 1 47pF
1
2
R5
C5 31.6k
J4 4700pF
2 R2
EN
1 88.7k FB
GND GND
GND
J3 R6
10.2k
TP3
GND
2 SS/TR GND
SS/TR
GND 1
J5
GND
The current flowing through the inductor is the inductor ripple current plus the output current. During powerup,
faults, or transient load conditions, the inductor current can increase above the peak inductor current level
calculated previously. In transient conditions, the inductor current can increase up to the switch current limit of
the device. For this reason, the most conservative design approach is to choose an inductor with a saturation
current rating equal to or greater than the switch current limit of the TPS54541 device, which is nominally 7.5 A.
VIN(max ) - VOUT VOUT 42 V – 3.3 V 3.3 V
LO(min ) = ´ = ´ = 5.1 µH
IOUT ´ KIND VIN(max ) ´ ƒSW 5 A ´ 0.3 42 V ´ 400 kHz
(31)
spacer
VOUT ´ (VIN(max ) - VOUT ) 3.3 V ´ (42 V – 3.3 V)
IRIPPLE = = = 1.58 A
VIN(max ) ´ LO ´ ƒSW 42 V ´ 4.8 µH ´ 400 kHz
(32)
spacer
( )ö÷
2
æV
ç OUT ´ VIN(max ) - VOUT
2
1 1 æ 3.3 V ´ (42 V – 3.3 V ) ö
IL(rms ) = (IOUT ) + (5 A ) +
2 2
´ ç ÷ = ´ ç ÷ = 3.5 A
12 ç VIN(max ) ´ LO ´ ƒSW ç ÷
÷ 12 è 42 V ´ 4.8 µH ´ 400 kHz ø
è ø
(33)
spacer
IRIPPLE 1.58 A
IL(peak ) = IOUT + = 5A + = 5.79 A
2 2 (34)
Equation 37 calculates the minimum output capacitance needed to meet the output voltage ripple specification,
where ƒsw is the switching frequency, VORIPPLE is the maximum allowable output voltage ripple, and IRIPPLE is the
inductor ripple current. Equation 37 yields 30 μF.
Equation 38 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple
specification. Equation 38 indicates the equivalent ESR should be less than 10 mΩ.
The most stringent criteria for the output capacitor is 95 μF required to maintain the output voltage within
regulation tolerance during a load transient.
Capacitance de-ratings for aging, temperature, and DC bias increases this minimum value. For this example, two
100-μF 6.3-V type X5R ceramic capacitors with 2 mΩ of ESR are used. The derated capacitance is 130 µF, well
above the minimum required capacitance of 95 µF.
Capacitors are generally rated for a maximum ripple current that can be filtered without degrading capacitor
reliability, especially non ceramic capacitors. Some capacitor data sheets specify the Root Mean Square (RMS)
value of the maximum ripple current. Equation 39 can calculate the RMS ripple current that the output capacitor
must support. For this example, Equation 39 yields 460 mA.
2 ´ DIOUT 2 ´ 2.5 A
COUT > = = 95 mF
fSW ´ DVOUT 400 kHz x 0.13 V (35)
COUT > LO x
((I ) - (I ) ) = 4.8 mH x (3.75 A - 1.25 A ) = 68 mF
OH
2
OL
2 2 2
((V ) - (V ) )
f
2
I
2
(3.43 V - 3.3 V ) 2 2
(36)
1 1 1 1
COUT > ´ = x = 30 mF
8 ´ fSW æ VORIPPLE ö 8 x 400 kHz æ 16 mV ö
ç ÷ ç 1.58 A ÷
è IRIPPLE ø è ø (37)
V 16 mV
RESR < ORIPPLE = = 10 mW
IRIPPLE 1.58 A (38)
ICOUT(rms) =
(
VOUT ´ VIN(max ) - VOUT )= 3.3 V ´ (42 V - 3.3 V )
= 460 mA
12 ´ VIN(max ) ´ LO ´ fSW 12 ´ 42 V ´ 4.8 mH ´ 400 kHz
(39)
If the power supply spends a significant amount of time at light load currents or in sleep mode, consider using a
diode, which has a low leakage current and slightly higher forward voltage drop.
2
(VIN - VOUT ) ´ IOUT ´ V ƒd C j ´ ƒSW ´ (VIN + Vƒ d)
PD = + =
VIN 2
(12 V - 3.3 V) ´ 5 A´ 0.52 V 180pF ´ 400kHz ´ (12 V + 0.52 V)2
+ = 1.89 W
12 V 2 (40)
ICI(rms ) = IOUT x
VOUT
x
(V
IN(min ) - VOUT ) = 5A 3.3 V
´
(6 V - 3.3 V )
= 2.5 A
VIN(min ) VIN(min ) 6V 6V
(41)
I ´ 0.25 5 A ´ 0.25
DVIN = OUT = = 170 mV
CIN ´ fSW 18.8 mF ´ 400 kHz (42)
Programmable UVLO threshold voltages are set using the resistor divider of RUVLO1 and RUVLO2 between VIN and
ground connected to the EN pin. Equation 3 and Equation 4 calculate the resistance values. For the example
application, a 365 kΩ between VIN and EN (RUVLO1) and a 88.7 kΩ between EN and ground (RUVLO2) are required
to produce the 5.75-V and 4.5-V start and stop voltages.
V - VSTOP 5.75 V - 4.5 V
RUVLO1 = START = = 368 kW
IHYS 3.4 mA (45)
VENA 1.2 V
RUVLO2 = = = 88.7 kW
VSTART - VENA 5.75 V - 1.2 V
+ I1 + 1.2 mA
RUVLO1 365 kW (46)
8.2.1.2.10 Compensation
There are several methods to design compensation for DC-DC regulators. The method is simple to calculate and
ignores the effects of the slope compensation that is internal to the device. Because the slope compensation is
ignored, the actual crossover frequency is lower than the crossover frequency in the calculations. This method
assumes the crossover frequency is between the modulator pole and the ESR zero and the ESR zero is at least
ten-times greater the modulator pole.
To get started, calculate the modulator pole, ƒp(mod), and the ESR zero, ƒz1 using Equation 48 and Equation 49.
For COUT, use a derated value of 130 μF. Use equations Equation 50 and Equation 51 to estimate a starting
point for the crossover frequency, ƒco. For the example, design, ƒp(mod) is 1850 Hz and ƒz(mod) is 610 kHz.
Equation 49 is the geometric mean of the modulator pole and the ESR zero and Equation 51 is the mean of
modulator pole and half of the switching frequency. Equation 50 yields 34 kHz and Equation 51 gives 19 kHz.
Use the geometric mean value of Equation 50 and Equation 51 for an initial crossover frequency. For this
example, after lab measurement, the crossover frequency target increased to 30 kHz for an improved transient
response.
Next, calculate the compensation components. A resistor in series with a capacitor creates a compensating zero.
In parallel to these two components, a capacitor forms the compensating pole.
IOUT(max ) 5A
fP(mod) = = = 1850 Hz
2 ´ p ´ VOUT ´ COUT 2 ´ p ´ 3.3 V ´ 130 mF (48)
1 1
f Z(mod) = = = 610 kHz
2 ´ p ´ RESR ´ COUT 2 ´ p ´ 1 mW ´ 130 mF (49)
fco1 = fp(mod) x f z(mod) = 1850 Hz x 610 kHz = 34 kHz
(50)
fSW 400 kHz
fco2 = fp(mod) x = 1850 Hz x = 19 kHz
2 2 (51)
To determine the compensation resistor, R4, use Equation 52. The typical power stage transconductance, gmps,
is 17 A/V. The output voltage, VO, reference voltage, VREF, and amplifier transconductance, gmea, are 3.3 V, 0.8
V and 350 μA/V, respectively. R4 is calculated to be 17 kΩ and a standard value of 16.9 kΩ is selected. Use
Equation 53 to set the compensation zero to the modulator pole frequency. Equation 53 yields 5100 pF for
compensating capacitor C5. 4700 pF is used for this design.
where (for Equation 56, Equation 57, Equation 58, and Equation 59)
• IOUT is the output current (A)
• RDS(on) is the on-resistance of the high-side MOSFET (Ω)
• VOUT is the output voltage (V)
• VIN is the input voltage (V)
• ƒsw is the switching frequency (Hz)
• trise is the SW pin voltage rise time and can be estimated by trise = VIN x 0.16 ns/V + 3 ns
• QG is the total gate charge of the internal MOSFET
• IQ is the operating nonswitching supply current (59)
Therefore,
PTOT = PCOND + PSW + PGD + PQ = 0.958 W + 0.118 W + 0.014 W + 0.0018 W = 1.092 W (60)
For given TA,
TJ = TA + RTH ´ PTOT (61)
For given TJ(MAX) = 150°C
TA (max ) = TJ(max ) - RTH ´ PTOT
90 90
80 80
70 70
60 60
TA (ƒC)
TA (ƒC)
50 50
6V 8V
40 40
12 V 12 V
30 24 V 30 24 V
36 V 36 V
20 20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IOUT (Amps) C056 IOUT (Amps) C057
90 90
80 80
70 70
60 60
TA (ƒC)
TA (ƒC)
10 V/div
IOUT
1 A/div
VIN
10 mV/div
100 mV/div
VIN
5 V/div
2 V/div
EN
VOUT
2 V/div
Time = 20 ms/div
Figure 53. Start-up With VIN Figure 54. Start-up With EN
SW
10 V/div
10 V/div
SW
500 mA/div
1 A/div
IL
IL
10 mV/div
10 mV/div
VOUT ± AC Coupled
VOUT ± AC Coupled
IOUT = 100 mA
SW
10 V/div
10 V/div
SW
1 A/div
200 mA/div
IL
IL
200 mV/div
10 mV/div
VOUT ± AC Coupled
No Load
VIN ± AC Coupled
SW
2 V/div
10 V/div
IL SW
500 mA/div
200 mA/div
IL
10 mV/div
VOUT = 5 V
20 mV/div
Figure 59. Input Ripple DCM Figure 60. Low Dropout Operation
VIN VIN
VOUT VOUT
Figure 61. Low Dropout Operation Figure 62. Low Dropout Operation
100 100
95 90
80
90
70
Efficiency (%)
Efficiency (%)
85 60
80 50
75 40
30
70 VIN
VIN ==77VV VIN
VIN == 77VV
VIN
VIN ==12
12VV 20 VIN
VIN == 12
12VV
65 VIN ==24
VIN 24VV 10 VOUT = ñ sU •SW = 400 kHz VIN == 24
VIN 24VV
VOUT = ñ sU •SW = 400 kHz VIN ==36
VIN 36VV VIN == 36
VIN 36VV
60 0
0 1 2 3 4 5 0.001 0.01 0.1 1
Output Current (A) C001 Output Current (A) C002
Figure 63. Efficiency vs Load Current Figure 64. Light Load Efficiency
100 100
95 90
80
90
70
Efficiency (%)
Efficiency (%)
85 60
80 50
75 40
30
70 VIN
VIN =
=66VV VIN
VIN == 66 V
V
VIN
VIN = 12 V 20 VIN
VIN == 12
12 VV
65 VIN = 24 V
VIN 10 VIN == 24
VIN 24 VV
VOUT = 3.3 sU •SW = 400 kHz VOUT = 3.3 sU •SW = 400 kHz
VIN =
VIN = 36
36 V
V VIN == 36
VIN 36 VV
60 0
0 1 2 3 4 5 0.001 0.01 0.1 1
Output Current (A) C003 Output Current (A) C006
Figure 65. Efficiency vs Load Current Figure 66. Light Load Efficiency
100 60 180
50 150
95
40 120
90 30 90
20 60
Efficiency (%)
85
Gain (dB)
Phase (£)
10 30
0 0
80
±10 ±30
75 ±20 ±60
V IN = 18 V
18in VIN = 12 V
±30 ±90
70 VOUT = 3.3 V
Series1
V ±40 ±120
IN = 24 V IOUT = 5 A Gain
65 ±50 fSW = 400 kHz ±150
VOUT = 12 V, fsw = 800 kHz Series3 Phase
V IN = 36 V ±60 ±180
60 10 100 1k 10k 100k 1M
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Frequency (Hz) C064
Figure 67. Efficiency vs Output Current Figure 68. Overall Loop Frequency Response
0.10 0.10
0.08 VIN = 12 V 0.08
VOUT = 3.3 V
Figure 69. Regulation vs Load Current Figure 70. Regulation vs Input Voltage
SS/TR COMP
RT/CLK Rcomp
Czero Cpole
CSS RT
Figure 71. TPS54541 Inverting Power Supply Based on the Application Note, SLVA317
8.2.3 Split-Rail Topology for Positive Input to Negative and Positive Output
The TPS54541 can be used to convert a positive input voltage to a split rail positive and negative output voltage
by using a coupled inductor. An example application is an amplifier requiring a split rail positive and negative
voltage power supply. For a more detailed example, see SLVA369.
VOPOS
+
VIN + Copos
Cin
Cboot
GND
VIN BOOT SW
Lo
Cd R1
+
GND Coneg
TPS54541 R2
FB VONEG
EN
SS/TR COMP
RT/CLK Rcomp
Czero Cpole
CSS RT
Figure 72. TPS54541 Split Rail Power Supply Based on the Application Note, SLVA369
10 Layout
Output
Capacitor Output
Topside Inductor
Ground Route Boot Capacitor
Area Catch
Trace on another layer to
provide wide path for Diode
topside ground
Input
Bypass
Capacitor BOOT PWRGD
VIN
VIN SW
EN GND
Thermal VIA
Soft-Start Frequency
Capacitor Set Resistor Signal VIA
11.4 Trademarks
Eco-mode, E2E are trademarks of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 5-Feb-2016
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
TPS54541DPRR ACTIVE WSON DPR 10 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 TPS
& no Sb/Br) 54541
TPS54541DPRT ACTIVE WSON DPR 10 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 85 TPS
& no Sb/Br) 54541
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 5-Feb-2016
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Feb-2016
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Feb-2016
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products Applications
Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive
Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications
Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers
DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps
DSP dsp.ti.com Energy and Lighting www.ti.com/energy
Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial
Interface interface.ti.com Medical www.ti.com/medical
Logic logic.ti.com Security www.ti.com/security
Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense
Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video
RFID www.ti-rfid.com
OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com
Wireless Connectivity www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2016, Texas Instruments Incorporated