APM4826K

N-Channel Enhancement Mode MOSFET

Features Pin Description

D
•
D
30V/11A, D
D
RDS(ON) =9.5mΩ(Typ.) @ VGS = 10V
RDS(ON) =13.5mΩ(Typ.) @ VGS = 4.5V S
S
• Super High Dense Cell Design S
G
• Avalanche Rated SOP-8
• Reliable and Rugged (5,6,7,8)
• Lead Free and Green Devices Available DD D D

(RoHS Compliant)

Applications (4) G

• Power Management in Notebook Computer,

and DC-DC Converters in Networking Systems.
S S S
( 1, 2, 3 )

N-Channel MOSFET

Ordering and Marking Information

APM4826 Package Code

K : SOP-8
Assembly Material Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range TR : Tape & Reel
Package Code Assembly Material
G : Halogen and Lead Free Device

APM4826
APM4826 K : XXXXX XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

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Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
o
a
TA=25 C 12
ID Continuous Drain Current (VGS=10V) o
TA=70 C 9.5 A
a
IDM 300µs Pulsed Drain Current (VGS=10V) 40
a
IS Diode Continuous Forward Current 3 A
b
IAR Avalanche Current 22.5 A
b
EAR Repetitive Avalanche Energy (L=0.3mH) 75 mJ
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
TA=25°C 2.5
PDa Maximum Power Dissipation W
TA=70°C 1.6
RθJAa,c Thermal Resistance-Junction to Ambient t ≤ 10s 50 °C/W
RθJL Thermal Resistance-Junction to Lead Steady State 25 °C/W
Surface Mounted on 1in pad area, t ≤ 10sec.
2
Note a
o o
Note b UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C).
Note c Maximum under Steady State conditions is 75 °C/W.

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

APM4826K
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 - - V
VDS=24V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 1.8 2.5 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA
e VGS=10V, IDS=12A - 9.5 12
RDS(ON) Drain-Source On-state Resistance mΩ
VGS=4.5V, IDS=9A - 13.5 18
Diode Characteristics
e
VSD Diode Forward Voltage ISD=3A, VGS=0V - 0.75 1.3 V
trr Reverse Recovery Time - 18 - ns
ISD=12A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge - 11 - nC

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Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

APM4826K
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
f
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1 1.7 3 Ω
Ciss Input Capacitance VGS=0V, - 1150 1400
Coss Output Capacitance VDS=15V, - 170 - pF
Crss Reverse Transfer Capacitance Frequency=1.0MHz - 135 -
td(ON) Turn-on Delay Time - 10 19
tr Turn-on Rise Time VDD=15V, RL=15Ω, - 12 23
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω - 30 55
tf Turn-off Fall Time - 7 14
f
Gate Charge Characteristics
Qg Total Gate Charge - 25.3 35
VDS=15V, VGS=10V,
Qgs Gate-Source Charge - 3.5 - nC
IDS=12A
Qgd Gate-Drain Charge - 6.5 -
Note e : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note f : Guaranteed by design, not subject to production testing.

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Typical Operating Characteristics

Power Dissipation Drain Current

3.0 14

2.5 12

10

ID - Drain Current (A)

2.0
Ptot - Power (W)

8
1.5
6

1.0
4

0.5
2
o o
TA=25 C TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

o o
Tj - Junction Temperature ( C) Tj - Junction Temperature ( C)

Safe Operation Area Thermal Transient Impedance

100 2

1 Duty = 0.5

0.2
it

Normalized Effective Transient

Lim

10
n)
s(o

0.1
ID - Drain Current (A)

Rd

300µs
0.1 0.05
1ms
0.02
1
10ms
0.01
100ms
0.01
1s Single Pulse
0.1
DC

2
Mounted on 1in pad
o o
TA=25 C RθJA : 50 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec)

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Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

50 27
VGS= 4.5,5,6,7,8,9,10V
45 24
40

RDS(ON) - On Resistance (mΩ)

21
35 4V
ID - Drain Current (A)

18 VGS=4.5V
30
15
25
12
20 VGS=10V
9
15 3.5V

10 6

5 3
3V

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50
VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

32 1.6
IDS=12A IDS= 250µA

28 1.4
Normalized Threshold Voltage
RDS(ON) - On Resistance (mΩ)

1.2
24

1.0
20
0.8
16
0.6

12
0.4

8 0.2

4 0.0
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
o
VGS - Gate-Source Voltage (V) Tj - Junction Temperature ( C)

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Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 50
VGS = 10V
1.8 IDS = 12A
1.6
Normalized On Resistance

10

IS - Source Current (A)

1.4
o
Tj=150 C
1.2
o
1.0 Tj=25 C

0.8
1
0.6

0.4

0.2
o
RON@Tj=25 C: 9.5mΩ
0.0 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5
o
Tj - Junction Temperature ( C) VSD - Source-Drain Voltage (V)

Capacitance Gate Charge

1800 10
Frequency=1MHz VDS=15V
1600 9 IDS=12A

1400 8
VGS - Gate-Source Voltage (V)

7
C - Capacitance (pF)

1200
Ciss
6
1000
5
800
4
600
3
400
2
200 Coss
Crss 1

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)

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 APM4826K

Package Information
SOP-8
D

SEE VIEW A

E1

E
°

h X 45
e b c
A2

0.25
A

GAUGE PLANE
SEATING PLANE
A1

L
VIEW A

S SOP-8
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.

A 1.75 0.069
A1 0.10 0.25 0.004 0.010
A2 1.25 0.049
b 0.31 0.51 0.012 0.020
c 0.17 0.25 0.007 0.010
D 4.80 5.00 0.189 0.197
E 5.80 6.20 0.228 0.244
E1 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050
0 0° 8° 0° 8°

Note: 1. Follow JEDEC MS-012 AA.

2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.

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Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 OD1 B A
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F
12.4+2.00 13.0+0.50
330.0 2.00 50 MIN. -0.00 -0.20 1.5 MIN. 20.2 MIN. 12.0 0.30 1.75 0.10 5.5 0.05

SOP-8 P0 P1 P2 D0 D1 T A0 B0 K0
1.5+0.10 0.6+0.00
4.0 0.10 8.0 0.10 2.0 0.05 -0.00 1.5 MIN. -0.40 6.40 0.20 5.20 0.20 2.10 0.20

(mm)

Devices Per Unit

Package Type Unit Quantity

SOP-8 Tape & Reel 2500

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Taping Direction Information

SOP-8

USER DIRECTION OF FEED

Classification Profile

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Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
3 3
Package Volume mm Volume mm
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

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Customer Service

Anpec Electronics Corp.

Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

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