Special Devices
Introduction ● Zener Diode
● Band Theory ● Photo Diode
● Intrinsic & Extrinsic Semiconductors ● LED
● Solar Cell
Semiconductors
Transistor
● PNP & NPN
● Transistor as an Amplifier
● Transistor as a Switch
DIODE
● Formation of PN Junction Logic Gates
● Diode as a Rectifier ● NOT Gate, OR Gate, NOR
Gate, AND Gate, NAND Gate
● Standard Arrangements
● De Morgan’s Law
Valence Band
A Band Which Contains Valence Electrons is
Called as Valence Band .
Electrons in Valence Band Do Not Contribute in
Conduction of Electricity .
Conduction Band
A Band Which Contains Free Electrons is Called
as Conduction Band .
Electrons in Conduction Band Contributes in
Conduction of Electricity .
Intrinsic semiconductors
A Pure Semiconductor is Called as Intrinsic Semiconductor .
At Zero Kelvin an Intrinsic Semiconductor
Behaves as Perfect Insulator .
At Room Temperature
Si Si Si Si
Si Si Si Si
Free electron
Hole
Si Si Si Si
Si Si Si Si
At Room Temperature in Intrinsic Semiconductor Electron
Carrier Concentration is Equal to Hole Carrier Concentration .
Effect of Temperature
Resistivity of Semiconductors Decreases with Increase in
Temperature , because with increase in temperature Number of Free
Electrons Increases due to which Resistance & Resistivity Decreases .
JEE Main 30th Jan 2023 S-1
For an intrinsic semiconductor if temperature is
increased. Its number density (n) and resistivity
(p) will
A Both n and p decreases
B n decreases but p increases
C Both n and P increases
D n increases and p decreases
JEE Main 30th Jan 2023 S-1
For an intrinsic semiconductor if temperature is
increased. Its number density (n) and resistivity
(p) will
A Both n and p decreases
B n decreases but p increases
C Both n and P increases
D n increases and p decreases
JEE Main 6th April 2023, S-1
4 The resistivity (𝜌) of semiconductor varies with
temperature. Which of the following curve
represents the correct behavior
A B
C D
JEE Main 6th April 2023, S-1
4 The resistivity (𝜌) of semiconductor varies with
temperature. Which of the following curve
represents the correct behavior
A B
C D
Extrinsic Semiconductors
● An Impure Semiconductor is called as
Extrinsic Semiconductor.
Extrinsic Semiconductors
● An Impure Semiconductor is called as
Extrinsic Semiconductor.
● The Process by which an Impurity is
Added to a Pure Semiconductor is Called
as Doping.
● After Adding Impurity the Semiconductor
Formed is Called as DOPED
Semiconductor.
Trivalent Impurity
P - Type Semiconductor
● If a Trivalent Impurity Like B , In , Ga , Al is
Added to Pure Semiconductor then it is
Called as P - Type Semiconductor .
● The Impurity in P - Type Semiconductor is
Called as Acceptor Impurities .
● In P - Type Semiconductor Holes are
Majority Carriers Whereas Free Electrons
are Minority Carriers .
Pentavalent Impurity
P
N - Type Semiconductor
● If a Pentavalent Impurity Like P , Sb , Bi is
Added to Pure Semiconductor then it is
Called as N - Type Semiconductor .
● The Impurity in N - Type Semiconductor is
Called as Donor Impurities .
● In N - Type Semiconductor Free Electrons
are Majority Carriers Whereas Holes are
Minority Carriers .
● In p-type semiconductor nh >> ne
● In n-type semiconductor ne >> nh
● nenh = ni2
JEE Main 25th July 2022 S-2
In a semiconductor, the number density of intrinsic
charge carriers at 27∘C is 1.5× 1016/m3. If the
semiconductor is doped with impurity atom, the hole
density increases to 4.5× 1022/m3. The electron density
in the doped semiconductor is ________ × 109/m3.
JEE Main 25th July 2022 S-2
In a semiconductor, the number density of intrinsic
charge carriers at 27∘C is 1.5× 1016/m3. If the
semiconductor is doped with impurity atom, the hole
density increases to 4.5× 1022/m3. The electron density
in the doped semiconductor is ________ × 109/m3.
Answer: 5
JEE Main 26th Aug 2021 S-1
Statement I : By doping silicon semiconductor with
pentavalent material, the electrons density increases.
Statement II : The n-type semiconductor has net
negative charge.
In the light of the above statements, choose the most
appropriate answer from the options given below :
A Statement-I is true but Statement-II is false
B Statement-I is false but statement-II is true
C Both statement I and statement II are true
D Both statement I and statement II are false
JEE Main 26th Aug 2021 S-1
Statement I : By doping silicon semiconductor with
pentavalent material, the electrons density increases.
Statement II : The n-type semiconductor has net
negative charge.
In the light of the above statements, choose the most
appropriate answer from the options given below :
A Statement-I is true but Statement-II is false
B Statement-I is false but statement-II is true
C Both statement I and statement II are true
D Both statement I and statement II are false
PN Junction Diode
P N
Formation of pn junction
Pn junction Forward bias
Pn junction Reverse bias
In Forward Biasing Diode is in ON State & Its
Depletion Width Decreases .
In Reverse Biasing Diode is in OFF State & Its
Depletion Width Increases .
JEE Main 25th Jan 2023 S-2
Statement 1: Si when doped with ‘B’ p-type is
formed and with ‘As’ is n type is formed.
Statement 2: It is possible to measure current
using ammeter if n & p type are joined.
A S1 : correct, S2 : false
B S1 : false, S2 : false
C S1 : correct, S2 : correct
D S1 : false, S2 : correct
JEE Main 25th Jan 2023 S-2
Statement 1: Si when doped with ‘B’ p-type is
formed and with ‘As’ is n type is formed.
Statement 2: It is possible to measure current
using ammeter if n & p type are joined.
A S1 : correct, S2 : false
B S1 : false, S2 : false
C S1 : correct, S2 : correct
D S1 : false, S2 : correct
JEE Main 6th April 2023 S-2
Given below are two statements : one is labelled as
Assertion A and the other is labelled as Reason R
Assertion A : Diffusion current in a p-n junction is greater
than the drift current in magnitude if the junction is
forward biased.
Reason R: Diffusion current in a p-n junction is from the
n-side to the p-side if the junction is forward biased.
In the light of the above statements, choose the most
appropriate answer from the options given below
A A is true but R is false
Both A and R are correct and R is
B the correct explanation of A
Both A and R are correct but R is
C NOT the correct explanation of A
D A is correct but R is not correct
JEE Main 6th April 2023 S-2
Given below are two statements : one is labelled as
Assertion A and the other is labelled as Reason R
Assertion A : Diffusion current in a p-n junction is greater
than the drift current in magnitude if the junction is
forward biased.
Reason R: Diffusion current in a p-n junction is from the
n-side to the p-side if the junction is forward biased.
In the light of the above statements, choose the most
appropriate answer from the options given below
A A is true but R is false
Both A and R are correct and R is
B the correct explanation of A
Both A and R are correct but R is
C NOT the correct explanation of A
D A is correct but R is not correct
JEE Main 26th June 2023 S-1
As per the given circuit the value of current
through the battery will be _____ A.
JEE Main 26th June 2023 S-1
As per the given circuit the value of current
through the battery will be _____ A.
Answer: 1
JEE Main 10th April 2023 S-2
If each diode has a forward bias resistance of 25
Ω in the below circuit, Which of the following
options is correct: HOME WORK
D
Rectifier
Rectifier
A Rectifier is a Device Which Converts AC Signal to DC Signal .
Half Wave Rectifier
Full Wave Rectifier
ZENER Diode
Zener Diode
It is a Special Diode Which is Operated in Reverse
BreakDown Region Without Getting Damaged .
1. Zener Diode is Made by High Doping in Intrinsic
Semiconductor .
2. It is Also used as VOLTAGE REGULATOR .
JEE Main 1st Feb 2023 S-2
Which of the following statement is true about
Zener diode?
Used in reverse biased mode as voltage
A
regulator
Used in forward biased mode as voltage
B
regulator
C It is not used as voltage regulator
Used in forward and reverse biased mode
D
as voltage regulator
JEE Main 1st Feb 2023 S-2
Which of the following statement is true about
Zener diode?
Used in reverse biased mode as voltage
A
regulator
Used in forward biased mode as voltage
B
regulator
C It is not used as voltage regulator
Used in forward and reverse biased mode
D
as voltage regulator
JEE Main 10th April 2023 S-1
A zener diode of power rating 1.6 W is be used as
voltage regulator. If the zener diode has a
breakdown of 8 V and it has to regulate voltage
fluctuating between 3 V and 10 V. The value of
resistance R for safe operation of diode will be
A 13.3 Ω
B 13 Ω
C 10 Ω
D 12 Ω
JEE Main 10th April 2023 S-1
A zener diode of power rating 1.6 W is be used as
voltage regulator. If the zener diode has a
breakdown of 8 V and it has to regulate voltage
fluctuating between 3 V and 10 V. The value of
resistance R for safe operation of diode will be
A 13.3 Ω
B 13 Ω
C 10 Ω
D 12 Ω
Photo Diode
Photo Diode
● It is a Opto Electronic Device Which is Used to Convert
Light Energy to Electrical Energy .
Photo Diode
● It is Always Operated in Reverse Biased Region .
● When Electrons of Energy More than Band GAP Energy
Strikes the Junction then Electron Holes Pair are Produced
Which Contribute Towards Conduction of Electricity .
JEE Main 25th Jan 2023 S-1
Consider the following statements in relation to diode.
Assertion A : PhotoDiode is operated in Reverse Biased
mode
Reason R: Significant current flows through a PN
Junction diode when it is operated in reverse biased
mode.
A Assertion and reason are correct, Reason is
correct explanation of assertion
Assertion and Reason are correct, Reason is NOT
B a correct explanation of assertion
C Assertion is correct, Reason is incorrect
D Assertion is incorrect, Reason is correct
JEE Main 25th Jan 2023 S-1
Consider the following statements in relation to diode.
Assertion A : PhotoDiode is operated in Reverse Biased
mode
Reason R: Significant current flows through a PN
Junction diode when it is operated in reverse biased
mode.
A Assertion and reason are correct, Reason is
correct explanation of assertion
Assertion and Reason are correct, Reason is NOT
B a correct explanation of assertion
C Assertion is correct, Reason is incorrect
D Assertion is incorrect, Reason is correct
Light Emitting Diode
Light Emitting Diode
It is a Device Which is Used to Convert Electrical Energy into
LIGHT ENERGY .
Metal Surface
● It is Always Operated in Forward Biased Mode .
● Photons are Emitted When Electrons Jump from
Conduction Band to Valence Band during there
Recombination in Junction Region .
Solar Cells
Solar Cell
It is a Device Which is Used to Convert Electrical Energy into
LIGHT ENERGY .
Metal Surface
● It is Different from Photo Diode as No External Biasing
is Required in SOLAR CELLS .
Solar Cell
The Generation of Electricity in Solar Cell is a Three Step
Process .
1 ) Generation
2 ) Separation
3 ) Collection
Metal Surface
JEE Main 28th July 2022 S-1
Identify the solar cell characteristics from the
following options:
A B
C D
JEE Main 28th July 2022 S-1
Identify the solar cell characteristics from the
following options:
A B
C D
Logic Gates
Logic Gates
NOT gate
Input Output
A Y
0 1
1 0
OR Gate
Input Output
A B Y
0 0
1 0
0 1
1 1
Input Output
A B Y
0 0 0
1 0 1
0 1 1
1 1 1
NOR Gate
A B Y=A+B Y = Y’
0 0 0 1
1 0 1 0
0 1 1 0
1 1 1 0
AND Gate
Input Output
A B Y
0 0
1 0
0 1
1 1
Input Output
A B Y
0 0 0
1 0 0
0 1 0
1 1 1
NAND Gate
Input Final output
A B Y=Y’ = A.B
0 0 1
1 0 1
0 1 1
1 1 0
Standard Arrangements
De - Morgan's Law
JEE Main 6th April 2023 S-1
Name the logic gate equivalent to the diagram
attached
A NOR
B OR
C NAND
D AND
JEE Main 6th April 2023 S-1
Name the logic gate equivalent to the diagram
attached
A NOR
B OR
C NAND
D AND
JEE Main 8th April 2023 S-1
For the logic circuit shown, the output waveform at Y is:
A B
C D
JEE Main 8th April 2023 S-1
For the logic circuit shown, the output waveform at Y is:
A B
C D
JEE Main 11th April 2023 S-1
The logic performed by the circuit shown in
figure is equivalent to : HOME WORK
A NAND
B NOR
C AND
D OR
JEE Main 13th April 2023 S-2
The output from a NAND gate having inputs A
and B given below will be, HOME WORK
A B
C D
